| 1. |
- Borgentun, Carl, 1979, et al.
(author)
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Full characterization of a semiconductor laser beam by simultaneous capture of the near- and far-field
- 2010
-
In: Conference Digest - IEEE International Semiconductor Laser Conference. - 0899-9406. - 9781424456833 ; , s. 127-128
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Conference paper (other academic/artistic)abstract
- We present a new measurement technique for fully characterizing a semiconductor laser beam. The reflections from both surfaces of a planoconvex lens are used to simultaneously capture the near- and far-field. The optical phase is then retrieved using the Gerchberg-Saxton algorithm with improved numerical operations.
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| 2. |
- Davani, Hooman A., et al.
(author)
-
Widely tunable high-speed bulk-micromachined short-wavelength MEMS-VCSEL
- 2010
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In: Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International. - 0899-9406. - 9781424456833 ; , s. 9-10
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Conference paper (peer-reviewed)abstract
- We present the first results of a high-speed bulk-micromachined tunable vertical-cavity surface-emitting laser (VCSEL) operating near 850nm using a half-symmetric resonator with a movable curved microelectromechanical system (MEMS) membrane.
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| 3. |
- Kögel, Benjamin, 1979, et al.
(author)
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Integrated Tunable VCSELs With Simple MEMS Technology
- 2010
-
In: Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International. - 0899-9406. - 9781424456833
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Conference paper (peer-reviewed)abstract
- A simple MEMS technology for wafer-scale fabrication of tunable VCSELs is presented. Reflown photo-resist droplets serve as preform for making curved movable micro-mirrors. First devices show a tuning range of 15 nm with mW-output power.
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| 4. |
- Westbergh, Petter, 1981, et al.
(author)
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850 nm VCSEL Operating Error-Free at 40 Gbit/s
- 2010
-
In: Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International. - 0899-9406. - 9781424456833 ; , s. 154 - 155
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Conference paper (peer-reviewed)abstract
- We report on speed enhancement of 850 nm oxide confined VCSELs by photon lifetime reduction and demonstrate a 23 GHz modulation bandwidth and error-free operation at 40 Gbit/s.
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| 5. |
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| 6. |
- Chang, Tsu Chi, et al.
(author)
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Lasing Action in GaN-Based VCSELs with top High-Contrast Grating Reflectors
- 2018
-
In: Conference Digest - IEEE International Semiconductor Laser Conference. - 0899-9406. ; 2018-September, s. 191-192
-
Conference paper (peer-reviewed)abstract
- We report a GaN-based VCSEL with a high-contrast grating (HCG) as the top mirror. The HCG consisted of TiO2 and rested directly on the n-GaN without an airgap or the use of any DBR layers to boost the reflectivity. The full VCSEL structure was optically pumped at room temperature and showed a lasing threshold of approximately 0.99 MW/cm2 and a lasing wavelength at 369.8 nm. The demonstration of HCG GaN-based VCSEL opens up the possibility to explore all the potential benefits of HCGs in the blue and ultraviolet spectral regime.
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| 7. |
- Grabowski, Alexander, 1993, et al.
(author)
-
Large-Signal Circuit Model for Datacom VCSELs
- 2018
-
In: Conference Digest - IEEE International Semiconductor Laser Conference. - 0899-9406. ; 2018-September, s. 193-194
-
Conference paper (peer-reviewed)abstract
- We present a physics-based equivalent-circuit model for datacom VCSELs, with ambient temperature and self-heating effects accounted for. This circuit model is unique in accounting for carrier capture dynamics between active region continuum and quantum well bound states. OOK/PAM4 simulations are demonstrated at 25°C and 85°C.
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| 8. |
- Haglund, Erik, 1985, et al.
(author)
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GaAs High-Contrast Gratings with InGaP Sacrificial Layer for Multi-Wavelength VCSEL Arrays
- 2016
-
In: Conference Digest - IEEE International Semiconductor Laser Conference. - 0899-9406. - 9784885523069 ; TuD2, s. Article n0 7765746-
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Conference paper (peer-reviewed)abstract
- We report on highly reflective suspended GaAs high-contrast gratings (HCGs) using an InGaP sacrificial layer. A high reflectivity approaching 100% was observed both in direct reflectivity measurement and by low threshold currents in fabricated multi-wavelength HCG-VCSEL arrays.
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| 9. |
- Haglund, Emanuel, 1988, et al.
(author)
-
Impact of Bonding Interface Thickness on the Performance of Silicon-Integrated Hybrid-Cavity VCSELs
- 2016
-
In: Conference Digest - IEEE International Semiconductor Laser Conference. - 0899-9406. - 9784885523069 ; , s. Article no 7765752-
-
Conference paper (peer-reviewed)abstract
- The dependence of the performance of short-wavelength silicon-integrated hybrid-cavity VCSELs on the thickness of the bonding interface used for the heterogeneous integration has been studied. Performance measures investigated include the emission wavelength, thermal impedance, and variation of threshold current and output power with temperature.
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| 10. |
- Haglund, Emanuel, 1988, et al.
(author)
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Impact of Damping on Large Signal VCSEL Dynamics
- 2014
-
In: Conference Digest - IEEE International Semiconductor Laser Conference. - 0899-9406. - 9781479957217 ; , s. 78-79
-
Conference paper (peer-reviewed)abstract
- The dependence of large signal VCSEL dynamics on damping is studied through time-domain measurements of turn-on transients and timing jitter for VCSELs having K-factors from 0.1 to 0.4 ns.
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| 11. |
- Haglund, Erik, 1985, et al.
(author)
-
Vertical-Cavity Silicon-Integrated Lasers by Bonding and Transfer Printing
- 2018
-
In: Conference Digest - IEEE International Semiconductor Laser Conference. - 0899-9406. ; 2018-September, s. 241-242
-
Conference paper (peer-reviewed)abstract
- We present the design and performance of the first current-driven hybrid-vertical-cavity silicon-integrated laser with in-plane waveguide emission. We also show results from preliminary work on transfer printing for large-scale integration of such light sources on silicon photonic integrated circuits.
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| 12. |
- Jahed, Mehdi, 1988, et al.
(author)
-
Monolithic Multi-Wavelength VCSEL Arrays with Uniform Performance by Intra-Cavity Phase Tuning
- 2021
-
In: Conference Digest - IEEE International Semiconductor Laser Conference. - 0899-9406.
-
Conference paper (peer-reviewed)abstract
- We demonstrate monolithic multi-wavelength VCSEL arrays with wavelengths set by intra-cavity phase tuning. Precise channel spacing is achieved by Ar-ion etching. Uniform performance over an array is achieved by spectral matching and balancing of wavelength dependent gain, DBR reflectances and optical confinement factor.
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| 13. |
- Larsson, Anders, 1957, et al.
(author)
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Advances in VCSELs for Communication and Sensing
- 2010
-
In: 22nd IEEE International Semiconductor Laser Conference Digest. - 0899-9406. - 9781424456826 ; , s. 4-5
-
Conference paper (peer-reviewed)abstract
- Recent advances in VCSELs for communication and sensing are reviewed, emphasizing the development of high speed VCSELs for datacom systems and high power single-mode VCSELs for sensing applications requiring high spectral purity and coherence.
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| 14. |
- Simpanen, Ewa, 1987, et al.
(author)
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1060 nm VCSEL for up to 40 Gbit/s Data Transmission
- 2016
-
In: Conference Digest - IEEE International Semiconductor Laser Conference. - 0899-9406. - 9784885523069 ; , s. Article no 7765757-
-
Conference paper (peer-reviewed)abstract
- A GaAs-based 1060 nm VCSEL with strained InGaAs/GaAsP QWs, doped DBRs, a short optical cavity, and multiple oxide apertures is presented. Modulation up to 40 Gbit/s at 25°C and 30 Gbit/s at 85°C is demonstrated.
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