| 1. |
- Forsgren, Katarina, et al.
(författare)
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Iodide-Based Atomic Layer Deposition of ZrO2 : Aspects of Phase Stability and Dielectric Properties
- 2002
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Ingår i: Chemical Vapor Deposition. - 0948-1907 .- 1521-3862. ; 8:3, s. 105-109
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Tidskriftsartikel (refereegranskat)abstract
- This study is an investigation into the influence of temperature, substrate, and thickness on the properties of ZrO2 thin films grown by atomic layer deposition (ALD). ZrI4 and H2O2 were used as source materials, and films deposited at temperatures between 250 °C and 500 °C consisted of mixed tetragonal and monoclinic ZrO2. The phase content and electrical properties of films of 3–30 nm thickness were studied for different temperatures and substrates. The films crystallized at smaller thicknesses on the Pt/Ti/SiO2/Si (denoted Pt in the following text) substrate than on polycrystalline Si (poly-Si) and MgO(001). It was also found that the film thickness had a stronger effect on the dielectric constant than either the growth temperature or the substrate.
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| 2. |
- Dezelah, Charles L., et al.
(författare)
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The Atomic Layer Deposition of HfO2 and ZrO2 using Advanced Metallocene Precursors and H2O as the Oxygen Source
- 2008
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Ingår i: Chemical Vapor Deposition. - : Wiley. - 0948-1907 .- 1521-3862. ; 14:11-12, s. 358-365
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Tidskriftsartikel (refereegranskat)abstract
- The atomic layer deposition (ALD) of HfO2 and ZrO2 thin films is investigated using (MeCp)(2)HfMe2, (MCp)(2)Hf(OMe)(Me), (MeCp)(2)ZrMe2, and (MeCp)(2)Zr(OMe)(Me) as the precursors at deposition temperatures between 300 and 500 degrees C, with water vapor as the oxygen Source. A self-limiting growth mechanism is confirmed at 350 degrees C for all the metal precursors examined. The processes provide nearly stoichiometric HfO2 and ZrO2 films with carbon and hydrogen concentrations below 0.5 and 1.0 at.-%, respectively, for representative samples. All films are polycrystalline as deposited, and possess a thin interfacial SiO2 layer. The capacitance-voltage (C-V) and Current density-voltage (I-V) behavior is reported and discussed for capacitor structures containing films from this study.
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| 3. |
- Diesen, Veronica, et al.
(författare)
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Improved Texturing and Photocatalytic Efficiency in TiO2 Films Grown Using Aerosol-Assisted CVD and Atmospheric Pressure CVD
- 2013
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Ingår i: Chemical Vapor Deposition. - : Wiley. - 0948-1907 .- 1521-3862. ; 19:10-12, s. 355-362
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Tidskriftsartikel (refereegranskat)abstract
- Four different TiO2 films are formed on glass at 500 degrees C by aerosol-assisted (AA)CVD, atmospheric pressure (AP)CVD, AACVD followed by APCVD, and APCVD followed by AACVD. The APCVD films are formed from reaction of TiCl4(g) whilst the AACVD films are made by decomposing Ti[OCH(CH3)(2)](4) contained in an aerosol. The film composition is studied using X-ray photoelectron spectroscopy (XPS) to ascertain the purity of the films, and no Cl traces can be found on any of the surfaces. The use of different combinations of CVD gives rise to significant changes in microstructure and preferred orientations. X-ray diffraction (XRD) patterns and Raman spectroscopy (RS) confirm that TiO2 in the anatase form is the dominant phase on all samples. All films show superhydrophilicity after 50min of black-light irradiation. The photocatalytic efficiencies of the films are assessed qualitatively by an ink test based on Resazurin, and quantitatively studied by measuring formaldehyde formation from tris(hydroxymethyl)aminomethane (Tris). Both methods show that the AACVD film and the film seeded by APCVD are the most photocatalytically efficient ones, both having an apparent quantum yield (AQY) of around 4.2%, while the APCVD film and the film seeded by AACVD have an AQY of 0.8% and 1.5%, respectively. The changes in photocatalytic activity are explained in part by changes in film microstructure and the accessible surface area.
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| 4. |
- Diesen, Veronica, et al.
(författare)
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Visible Light Photocatalytic Activity in AACVD-Prepared N-modified TiO2 Thin Films
- 2014
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Ingår i: Chemical Vapor Deposition. - : Wiley. - 0948-1907 .- 1521-3862. ; 20:1-3, s. 91-97
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Tidskriftsartikel (refereegranskat)abstract
- Nitrogen-modified TiO2 thin films are obtained, for the first time, from aerosol-assisted (AA)CVD-prepared samples via a post-treatment method involving immersion in liquid ammonia to achieve nitrogen-modified TiO2 and visible-light photo-activity. The resulting modified and unmodified TiO2 films are characterized by X-ray diffraction (XRD), Raman spectroscopy (RS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution (HR)TEM, energy dispersive X-ray (EDX) spectroscopy, selected area electron diffraction (SAED), UV-vis spectroscopy, and X-ray photoelectron spectroscopy (XPS). This shows that the films are approximate to 200nm thick and contain anisotropic crystals of anatase TiO2. XPS shows that the nitrogen is successfully added to the surface of the film interstitially at 0.7 at.-%, but is only present to a film depth of 50nm. The nitrogen doping causes a red shift in the absorption band and a band gap narrowing of approximate to 0.1eV. The surface-bound nitrogen results from the post-treatment method of doping where the films are soaked in liquid ammonia before annealing. The photocatalytic efficiencies of the films under visible light (>385nm) are evaluated by measuring formaldehyde formation from the probe molecule tris(hydroxymethyl)aminomethane (Tris). Hydrogen abstraction from Tris, obtained from, e.g., photocatalytically produced OH radicals, leads to formaldehyde formation which is then detected through a modified version of the Hantzsch reaction. The results show that the N-modified film possess remarkable photocatalytic properties with an apparent photochemical quantum yield of approximate to 8%. Nitrogen-modified TiO2 thin films are obtained from aerosol-assisted (AA)CVD-prepared samples via a post-treatment method of immersion in liquid ammonia and calcining at 500 degrees C. The films are characterized and shown to have visible light photocatalytic activity. Visible light photoactivity is shown by measuring formaldehyde formation from the probe molecule tris(hydroxymethyl)aminomethane.
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| 5. |
- Fallberg, Anna, et al.
(författare)
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CVD of Copper(I) Nitride
- 2009
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Ingår i: Chemical Vapor Deposition. - Weinheim : WILEY-VCH Verlag GmbH & Co. - 0948-1907 .- 1521-3862. ; 15:10-12, s. 300-305
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Tidskriftsartikel (refereegranskat)abstract
- Copper(I) nitride (Cu3N) is deposited by CVD using copper(II) hexafluoroacetylacetonate (Cu(hfaC)(2)), ammonia, and water as precursors. The influences of process parameters on growth rate, phase content, chemical composition and morphology are studied. The introduction of water is found to increase film growth rate on the SiO2 substrate. Films are deposited in the temperature range 250-550 degrees C. Single-phase Cu3N is obtained up to 400 degrees C. A phase mixture Of Cu3N and Cu is obtained at 425 degrees C, while a temperature of 550 degrees C and above yields single-phase Cu. X-ray diffraction (XRD) confirms that Cu3N has the cubic, anti-ReO3-type structure; with a cell parameter in the range 3.805-3.816 angstrom. X-ray photoelectron spectroscopy (XPS) verifies the Cu3N stoichiometry. The films are free from impurities (below the detection limit of 1%) at a large excess of ammonia. Scanning electron microscopy (SEM) shows facetted grains, with the faces becoming more well-defined at higher temperatures.
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| 6. |
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| 7. |
- Lindahl, Erik, et al.
(författare)
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Atomic Layer Deposition of NiO by the Ni(thd)2/H2O Precursor Combination
- 2009
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Ingår i: Chemical Vapor Deposition. - : WILEY. - 0948-1907 .- 1521-3862. ; 15:7-9, s. 186-191
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Tidskriftsartikel (refereegranskat)abstract
- Polycrystalline nickel oxide is deposited on SiO2 substrates by alternating pulses of bis(2,2,6,6-tetramethylheptane-3,5-dionato)nickel(II) (Ni(thd)(2)) and H2O. The deposition process shows atomic layer deposition (ALD) characteristics with respect to the saturation behavior of the two precursors at deposition temperatures up to 275 degrees C. The growth of nickel oxide is shown to be highly dependent on surface hydroxide groups, and a large excess of H2O is required to achieve saturation. Throughout the deposition temperature range the amount of carbon in the film, originating from the metal precursor ligand, is in the range 1-2%. Above 275 degrees C ALD growth behavior is lost in favor of thermal decomposition of the metal precursor. The initial nucleation process is studied by atomic force microscopy (AFM) and reveals nucleation of well-separated grains which coalesce to a continuous film after about 250 ALD cycles.
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| 8. |
- Lindahl, Erik, et al.
(författare)
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Gas-Pulsed CVD for Film Growth in the Cu-Ni-N System
- 2012
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Ingår i: Chemical Vapor Deposition. - : Wiley. - 0948-1907 .- 1521-3862. ; 18:1-3, s. 10-16
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Tidskriftsartikel (refereegranskat)abstract
- A new ternary solid solution, Cu3-xNix+yN, is prepared by gas-pulsed CVD at 260 degrees C. Gas pulses of the precursor mixtures Cu(hfac)2+NH3 and Ni(thd)2+NH3, separated by intermittent ammonia pulses, are employed for the deposition of Cu3N and Ni3N, respectively. A few monolayers of the nitrides are grown in each CVD pulse and then mixed by diffusion to produce the solid solution. The metal content of the solid solution can be varied continuously from 100% to about 20% Cu, which means that the electrical properties can be varied from 1.6eV (band gap of Cu3N) to metallic (Ni3N). This is of interest for various applications, e.g., solar energy, catalysis, and microelectronics.
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| 9. |
- Mårtensson, Per, et al.
(författare)
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Atomic layer epitaxy of copper on tantalum
- 1997
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Ingår i: Chemical Vapor Deposition. - : Wiley. - 0948-1907 .- 1521-3862. ; 3:1, s. 45-50
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Tidskriftsartikel (refereegranskat)abstract
- The decreasing size and increasing complexity of the components in future microelectronics devices present a great challenge in the development of new deposition techniques. One method for the deposition of semiconductor materials which has gen erated co
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| 10. |
- Olander, Jenny, et al.
(författare)
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Laser-Assisted Atomic Layer Deposition of Boron Nitride Thin Films
- 2005
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Ingår i: Chemical Vapor Deposition. - : Wiley. - 0948-1907 .- 1521-3862. ; 11, s. 330-337
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Tidskriftsartikel (refereegranskat)abstract
- Boron nitride thin films have been grown by both laser-assisted, and conventional atomic layer deposition (LALD/ALD) at temperatures in the range 250-750 °C. Both the NH3 and BBr3 precursors were appreciably dissociated by the ArF excimer laser, and up to 600 °C, the growth rate was 100 % higher for the LALD process than for ALD. The films consisted of hydrogen-terminated turbostratic BN grains. H2 was theoretically found to bind as strongly as BBrX and NHX (X = 0-2) to hBN(100) edges. The fresh films were stoichiometric with respect to B and N, and contained low degrees of contamination, but oxidized easily in air.
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| 11. |
- Pedersen, Henrik, et al.
(författare)
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Low Temperature CVD of Thin, Amorphous Boron-Carbon Films for Neutron Detectors
- 2012
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Ingår i: Chemical Vapor Deposition. - : Wiley-VCH Verlag Berlin. - 0948-1907 .- 1521-3862. ; 18:7-9, s. 221-224
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Tidskriftsartikel (refereegranskat)abstract
- Thin, amorphous boron-carbon films are deposited at low temperature (400600?degrees C) by thermally activated CVD using the organoborane triethylboron (TEB) as a single precursor. Two different carrier gases are tested. At 600?degrees C, using argon as the carrier gas, the deposition rate is close to 1?mu m h-1. The film has a density of 2.14?g?cm-3 with a B/C ratio of 3.7. When hydrogen is used as the carrier gas, the film density is 2.42?g?cm-3, the B/C ratio 4.6, and the deposition rate 0.35?mu m h-1. The hydrogen content in the films is about 34 at.-%, regardless of ambient conditions during deposition, and varies only with the deposition temperature. In addition, both the film composition and the film density are found to vary significantly with the deposition temperature and the atmospheric conditions. Based upon these results, a deposition mechanism for the growth of boron-carbon films from TEB, where the TEB molecule is decomposed to BH3 and hydrocarbons, is suggested.
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| 12. |
- Rashid, Abdid, et al.
(författare)
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Photothermal CVD of Carbon Thin Films using CH2I2 as the Precursor
- 2008
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Ingår i: Chemical Vapor Deposition. - : Wiley. - 0948-1907 .- 1521-3862. ; 14:9-10, s. 279-285
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Tidskriftsartikel (refereegranskat)abstract
- Thin carbon films are deposited via CVD from the precursor methylene iodide (CH2I2) using two different activation sources; a broadband IR lamp and a thermal plate. Large differences in deposition rates are observed when comparing the two sources of activation. The characteristics of the deposition kinetics of the highly sensitive system are also investigated by employing a split, symmetric reactor, and by using a qualitative model. Raman spectroscopy (RS) is used for microstructural characterization of the films. The lamp technique allows a simple and low-cost experimental setup, for deposition of disordered carbon thin films at relatively low temperatures and high rates.
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| 13. |
- Rooth, Mårten, et al.
(författare)
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Atomic Layer Deposition of Co3O4 Thin Films Using a CoI2/O2 Precursor Combination
- 2006
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Ingår i: Chemical Vapor Deposition. - : Wiley. - 0948-1907 .- 1521-3862. ; 12:4, s. 209-213
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Tidskriftsartikel (refereegranskat)abstract
- Thin films of Co3O4 have been successfully deposited on SiO2/Si(100) and MgO(001) substrates by atomic layer deposition (ALD) using the precursor combination CoI2/O2. The deposition temperature was found to have a strong influence on the growth rate. On SiO2/Si(100) substrates, growth rates of about 0.2 nm per cycle were recorded at 500 °C, decreasing to 0.004 nm per cycle at 700 °C. On MgO(001) substrates the growth rates were lower, reaching about 0.12 nm per cycle at 475 °C, while no growth could be detected at 700 °C. The films were found to grow as the cubic Co3O4 phase throughout the temperature range 475-700 °C, polycrystalline on SiO2/Si(100), and epitaxial on MgO(001). On MgO(001) the epitaxial relationship was established to the in-plane orientation (001)[100]Co3O4||(001)[100]MgO. No iodine could be detected by Rutherford backscattering spectroscopy (RBS) or by X-ray fluorescence (XRF) spectroscopy in any of the deposited films.
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| 14. |
- Rooth, Mårten, et al.
(författare)
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Atomic layer deposition of iron oxide thin films and nano-tubes using ferrocene and oxygen as precursors
- 2008
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Ingår i: Chemical Vapor Deposition. - : Wiley. - 0948-1907 .- 1521-3862. ; 14:3-4, s. 67-70
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Tidskriftsartikel (refereegranskat)abstract
- Thin films and nanotubes of iron oxide are deposited using atomic layer deposition (ALD) on Si(100) and anodic aluminum oxide (AAO), respectively. Ferrocene, Fe(Cp)(2), and oxygen are used as precursors. Successful depositions are carried out in the temperature range 350-500 degrees C on Si(100), while all depositions on AAO are made at 400 degrees C. The growth per cycle values are around 0.14 nm on Si(100) in the temperature range 350-500 degrees C and 0.06 nm on AAO. Below 500 degrees C, the iron oxide crystallizes as a phase mixture on both types of substrates. One of the phases is identified as the rhombohedral Fe2O3 phase (hematite), but the second phase cannot be unambiguously identified. Above 500 degrees C, only phase pure hematite is detected. For deposition of nanotubes, in-house made AAO membranes are used, having an aspect ratio of 30. By etching of the AAO membranes after deposition, free-standing nanotubes retaining the order of the AAO template can be fabricated.
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| 15. |
- Skoblin, Grigory, 1991, et al.
(författare)
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A hybrid-type CVD system for graphene growth
- 2015
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Ingår i: Chemical Vapor Deposition. - : Wiley. - 1521-3862 .- 0948-1907. ; 21:7-9, s. 176-180
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Tidskriftsartikel (refereegranskat)abstract
- A cold-wall CVD system for graphene growth on metal foils is converted to an effectively hot-wall one by merely adding another heater, sandwiching the foil in between the heaters. This simple design demonstrates both an improved temperature uniformity characteristic for hot-wall systems, and a high responsivity distinctive for cold-wall ones. This beneficial combination allows for a much better control of graphene growth kinetics. An effectively hot-wall system for graphene growth is made from a cold-wall one by encapsulating the metal foil in between two heaters. This simple conversion demonstrates improved temperature control and high temperature ramping rate. It also allows reaching lower nucleation density and provides better control of growth kinetics.
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| 16. |
- Sundqvist, J., et al.
(författare)
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Atomic layer deposition of Ta2O5 using the TaI 5 and O2 precursor combination
- 2003
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Ingår i: Chemical Vapor Deposition. - : Wiley. - 0948-1907 .- 1521-3862. ; 9:5, s. 245-248
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Tidskriftsartikel (refereegranskat)abstract
- Thin films of tantalum oxide have been deposited on Si(100) substrates using atomic layer deposition (ALD) employing the TaI5 and O 2 precursor combination. Growth was studied in the temperature region 400 to 700°C. The resulting films were found to be iodine-free above 450°C, and consisted of the polycrystalline orthorhombic ß-Ta 2O5 phase. The growth rate was found to be strongly dependent on the deposition temperature, reaching a maximum of 0.17 nm cycle-1 at 600°C.
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| 17. |
- Van Regemorter, Tanguy, et al.
(författare)
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A theoretical study of nitrogen-induced effects on initial steps of diamond CVD growth
- 2008
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Ingår i: Chemical Vapor Deposition. - : Wiley. - 0948-1907 .- 1521-3862. ; 14:7-8, s. 224-231
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Tidskriftsartikel (refereegranskat)abstract
- An investigation based on an ultra-soft, pseudo-potential, density functional theory (DFT) method, using a generalized gradient approximation (GGA) under periodic boundary conditions, is performed in order to investigate the effect of substitutional nitrogen on the CH3 adsorption and the H abstraction from the adsorbed CH3 species. Both (111) and (100)-2x1 surface are considered with 4 and 6 substitutional N positions, respectively. For the two surface orientations, no strong effect of N is generally observed when positioning it within the first C layer (i.e., surface layer). The only exception is for N in one of three investigated first layer positions within the (100) surface, for which a spontaneous -scission occurs as a result of the H abstraction reaction. For N in the second carbon layer, the CH3 adsorption reaction is calculated to be strongly disfavored, whilst the H abstraction reaction is markedly improved.
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| 18. |
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| 19. |
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| 20. |
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