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1.
  • Astromskas, Gvidas, et al. (författare)
  • Temperature dependence of GaSb overgrowth of tungsten on GaSb (001) substrates using MOVPE
  • 2008
  • Ingår i: 20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008. - 1092-8669. ; , s. 354-356
  • Konferensbidrag (refereegranskat)abstract
    • We demonstrate GaSb overgrowth over tungsten patterns and that selective area epitaxy is achievable in the W/GaSb system. By controlling the facet growth at low temperatures, it is possible to embed a metal grating in a thin layer.
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2.
  • Berg, Martin, et al. (författare)
  • Single Balanced Down-Conversion Mixer Utilizing Indium Arsenide Nanowire MOSFETs
  • 2014
  • Ingår i: 26th International Conference on Indium Phosphideand Related Materials (IPRM). - 1092-8669.
  • Konferensbidrag (refereegranskat)abstract
    • We have fabricated single balanced down-conversion mixer circuits using InAs nanowire MOSFETs as both active and passive devices. This is achieved by a combination of electron beam lithography and UV-lithography with a line width of 12 mu m. The circuits exhibit a low frequency voltage conversion gain of 6 dB, a -3 dB cutoff frequency of 2 GHz and a power consumption of 3.8 mW, while operating at a supply voltage of 1.5 V. The circuits retain circuit functionality even for a supply voltage of 1 V.
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3.
  • Borg, Mattias, et al. (författare)
  • MOVPE Growth and Structural Characterization of Extremely Lattice-Mismatched InP-InSB Nanowire Heterostructures
  • 2009
  • Ingår i: 2009 IEEE 21st International Conference On Indium Phosphide & Related Materials (IPRM). - 1092-8669. ; , s. 249-252
  • Konferensbidrag (refereegranskat)abstract
    • We present a growth study and structural characterization of InP-InSb nanowire heterostructures. In contrast to planar epitaxy, this heterostructure can be realized in nanowires without the formation of dislocations, despite an extreme lattice-mismatch (10.4%). We obtain high crystal quality in the InSb nanowires, confirmed by a narrow 111 reflection peak measured by XRD. Additionally, the diameter dependence of the nanowire growth rate was investigated. An original competition between surface growth and nanowire growth is found, which can be controlled by varying the nanowire surface coverage. Finally, HRTEM and X-EDS investigations reveal that the InSb nanowire is always defect-free zinc-blende, and that the InP-InSb heterointerface is free from misfit dislocations, although single twin planes are common.
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4.
  • Drakinskiy, Vladimir, 1977, et al. (författare)
  • Terahertz GaAs Schottky diode mixer and multiplier MIC’s based on e-beam technology
  • 2013
  • Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. - 9781467361316
  • Konferensbidrag (refereegranskat)abstract
    • We present the progress of the technological development of a full e-beam based monolithically integrated Schottky diode process applicable for sub-millimetre wave multipliers and mixers. Evaluation of the process has been done in a number of demonstrators showing state-of-the-art performance, including various multiplier circuits up to 200 GHz with a measured flange efficiency of above 35%, as well as heterodyne receiver front-end modules operating at 340 GHz and 557 GHz with a measured receiver DSB noise temperature of below 700 K and 1300 K respectively.
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5.
  • Egard, Mikael, et al. (författare)
  • Frequency Modulation in mm-Wave InGaAs MOSFET/RTD Wavelet Generators
  • 2013
  • Ingår i: 2013 International Conference on Indium Phosphide and Related Materials (IPRM). - 1092-8669. ; , s. 1-2
  • Konferensbidrag (refereegranskat)abstract
    • Co-integration of an InGaAs MOSFET and an RTD is performed to realize a wavelet generator. The large transconductance of the MOSFET (1.9 mS/mu m) is used to switch the current in an oscillator circuit and coherent wavelets down to 41 ps are generated in the frequency domain of 50 to 100 GHz. The lowest power consumption measured is 1.9 pJ/pulse. It is found that the supply bias can be used to modulate the center frequency of the wavelets.
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6.
  • Johansson, Sofia, et al. (författare)
  • RF Characterization of Vertical InAs Nanowire MOSFETs with f(t) and f(max) above 140 GHz
  • 2014
  • Ingår i: 26th International Conference on Indium Phosphideand Related Materials (IPRM). - 1092-8669.
  • Konferensbidrag (refereegranskat)abstract
    • We present RF characterization of vertical gateall- around InAs nanowire MOSFETs integrated on Si substrates with peak f(t) = 142 GHz and f(max) = 155 GHz, representing the record for vertical nanowire transistors. The devices has an L-g approximate to 150 nm with a g(m)=700 mS/mm for a nanowire diameter of 38 nm and an EOT = 1.4 nm. The high values of f(t) is achieved through electron beam lithography patterning of the gate and drain contact which substantially decreases the parasitic capacitances through reduction of the overlay capacitance, which is in good agreement with TCAD modeling.
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7.
  • Larsson, Anders, 1957, et al. (författare)
  • High speed VCSELs for optical interconnects
  • 2012
  • Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. - 9781467317252 ; , s. 269-272
  • Konferensbidrag (refereegranskat)abstract
    • This paper presents an overview of our recent work on high speed, oxide confined, 850 nm vertical cavity surface emitting lasers (VCSELs). With proper active region and cavity designs, and techniques for reducing capacitance and thermal impedance, we have reached a modulation bandwidth of 23 GHz and demonstrated 40 Gbps transmission. Using an integrated mode filter for reducing the spectral width we have extended the reach on multimode fiber at 25 Gbps from 100 to 500 m. Improved link capacity was also demonstrated using a more spectrally efficient multi-level modulation format (4-PAM). Finally, a MEMS-technology for wafer scale integration of tunable high speed VCSELs was developed, enabling a tuning range of 24 nm, a 6 GHz modulation bandwidth, and 5 Gbps transmission.
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8.
  • Leuther, A., et al. (författare)
  • Metamorphic HEMT technology for low-noise applications
  • 2009
  • Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. - 9781424434336 ; , s. 188-191
  • Konferensbidrag (refereegranskat)abstract
    • Different noise sources in HEMTs are discussed, and state-of-the-art low-noise amplifiers based on the Fraunhofer IAF 100 nm and 50 nm gate length metamorphic HEMT (mHEMT) process are presented. These mHEMT technology feature an extrinsic f T of 220 / 375 GHz and an extrinsic transconduction g m , max , of 1300 / 1800 mS/mm. By using the 50 nm technology several low-noise amplifier MMICs were realized. A small signal gain of 21 dB and a noise figure of 1.9 dB was measured in the frequency range between 80 and 100 GHz at ambient temperature. To investigate the low temperature behaviour of the 100 nm technology, single 4 * 40 μm mHEMTs were integrated in hybrid 4 - 8 GHz (Chalmers) and 16 - 26 GHz (Yebes) amplifiers. At cryogenic temperatures noise temperatures of 3 K at 5 GHz and 12 K at 22 GHz were achieved.
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9.
  • Lind, Erik, et al. (författare)
  • High Frequency Performance of Vertical InAs Nanowire MOSFET
  • 2010
  • Ingår i: 2010 22Nd International Conference On Indium Phosphide And Related Materials (Iprm). - 1092-8669. - 9781424459193
  • Konferensbidrag (refereegranskat)abstract
    • We report on RF characterization of vertical, 100-nm-gate length InAs nanowire MOSFETs, utilizing wrap-gate technology and Al2O3 high-kappa gate oxide. The transistors show f(t)=5.6 GHz and f(max)=22 GHz, mainly limited by parasitic capacitances. The RF device performance is described using a hybrid-pi model taking hole generation at the drain into account. Electrostatic modeling of the parasitic capacitances for arrays of vertical nanowires indicates that a strong reduction in extrinsic capacitances can be achieved for devices with a small inter-wire separation.
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10.
  • Lind, Erik, et al. (författare)
  • Improved breakdown voltages for type I InP/InGaAs DHBTs
  • 2008
  • Ingår i: 20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008. - 1092-8669. ; , s. 504-507
  • Konferensbidrag (refereegranskat)abstract
    • We have investigated the base-collector breakdown voltage of type I InGaAs/InP DHBTs, which is shown to be dominated by band-to-band tunneling in the base-collector grade. By optimizing the grade we obtain a 20% increase in the breakdown voltage compared with traditional grades.
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11.
  • Malko, Aleksandra, 1984, et al. (författare)
  • High Efficiency and Broad-Band Operation of Monolithically Integrated W-Band HBV Frequency Tripler
  • 2012
  • Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. - 9781467317252 ; , s. 92-94
  • Konferensbidrag (refereegranskat)abstract
    • We report on a state-of-the-art monolithically integrated heterostructure barrier varactor (HBV) frequency tripler operating in the W-band frequency range. The device utilizes series connection of four HBV diode mesas, with total 12 barriers, and a cross section area of 700μm^2. The presented tripler withstands 800mW input power, while delivering 185mW of output power at 107GHz. The corresponding conversion efficiency was measured to be 23% and the circuit exhibited 15% 3-dB bandwidth.
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12.
  • Mo, Jiongjiong, et al. (författare)
  • Asymmetric InGaAs MOSFETs with InGaAs source and InP drain
  • 2014
  • Ingår i: 26th International Conference on Indium Phosphideand Related Materials (IPRM). - 1092-8669.
  • Konferensbidrag (refereegranskat)abstract
    • Asymmetric In0.53Ga0.47As MOSFETs with different regrown contacts at source (In0.53Ga0.47As) and drain (InP) have been developed. By introducing a wider bandgap material, InP as drain electrode, higher self-gain g(m)/g(d) has been obtained with reduced output conductance g(d) and improved break-down voltage V-bd. For L-g=100nm, a high oscillation frequency f(max)= 270GHz has been obtained using an InP drain.
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13.
  • Moschetti, Giuseppe, 1982, et al. (författare)
  • DC and RF cryogenic behaviour of InAs/AlSb HEMTs
  • 2010
  • Ingår i: International Conference on Indium Phosphide and Related Materials. Proceedings. 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010; Kagawa; 31 May 2010 through 4 June 2010. - 1092-8669. - 9781424459209 ; , s. 321-324
  • Konferensbidrag (refereegranskat)abstract
    • DC and RF properties are reported for InAs/AlSb HEMTs operating under cryogenic conditions (6 K) for a drain source bias up to 0.3 V. Compared to room temperature (300 K), a large improvement in device properties was observed: lower R on , lower g ds , a more distinct knee in the I ds (V ds ) characteristics, increased f T and a reduction of the gate leakage current of more than two orders of magnitude. This makes InAs/AlSb HEMT technology of large interest in cryogenic low-noise amplifier designs with high constraints on power dissipation.
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14.
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15.
  • Moschetti, Giuseppe, 1982, et al. (författare)
  • Source-drain scaling of ion-implanted InAs/AlSb HEMTs
  • 2012
  • Ingår i: Indium Phosphide and Related Materials (IPRM), 2012 International Conference on. - : IEEE. - 1092-8669. - 9781467317252 ; , s. 57-60
  • Konferensbidrag (refereegranskat)abstract
    • We report on the lateral scaling of true planar InAs/AlSb high electron mobility transistors (HEMTs) based on ion implantation for device isolation. When reducing the source drain distance, dsd, from 2.5 μm to 1 μm, the HEMTs showed up to 56% higher maximum drain current, 23% higher peak transconductance and T of 185 GHz (+32%). A trade-off in the lateral scaling is needed due to increased gate leakage current and pinch-off degradation for dsd below 1.5 μm. The ability to withstand oxidation of the InAs/AlSb heterostructure makes the planar technology based on ion implantation extremely promising for MMIC integration of InAs/AlSb HEMTs.
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16.
  • Nilsson, Per-Åke, 1964, et al. (författare)
  • Influence of gate-channel distance in low-noise InP HEMTs
  • 2013
  • Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. - 9781467361309
  • Konferensbidrag (refereegranskat)abstract
    • The effect on the electrical properties, relevant to noise, from the gate-channel distance (barrier layer thickness) in 130 nm gate-length InP HEMTs was investigated. An increased quality of pinch-off was seen in HEMTs with an 8 nm barrier layer thickness compared to an 11 nm barrier. For the 8 nm barrier material the gate leakage increased from 1 mu A/mm to 7 mu A/mm at -1 V gate bias.
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17.
  • Persson, Ann, et al. (författare)
  • Heterointerfaces in III-V semiconductor nanowhiskers
  • 2002
  • Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. ; , s. 281-283
  • Konferensbidrag (refereegranskat)abstract
    • We have investigated heterostructures formed within Vapor-Liquid-Solid grown III-V nanowhiskers. The growth conditions that are typical for chemical beam epitaxy facilitate the creation of atomically abrupt interfaces. In this paper we investigate the properties of heterostructure interfaces including switching of either the column-V material (As, P) or the column-III material (In, Ga).
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18.
  • Persson, Karl-Magnus, et al. (författare)
  • 1/f-noise in Vertical InAs Nanowire Transistors
  • 2013
  • Ingår i: 2013 International Conference on Indium Phosphide and Related Materials (IPRM). - 1092-8669. ; , s. 1-2
  • Konferensbidrag (refereegranskat)abstract
    • The material quality at high-k interfaces are a major concern for FET devices. We study the effect on two types of InAs nanowire (NW) transistors and compare their characteristics. It is found that by introducing an inner layer of Al2O3 at the high-kappa interface, the low frequency noise (LFN) performance regarding gate voltage noise spectral density, S-Vg, is improved by one order of magnitude per unit gate area.
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19.
  • Rodilla, H., et al. (författare)
  • Isolated-gate InAs/AlSb HEMTs: A Monte Carlo study
  • 2010
  • Ingår i: International Conference on Indium Phosphide and Related Materials. Proceedings. 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010; Kagawa; 31 May 2010 through 4 June 2010. - 1092-8669. - 9781424459209 ; , s. 333-336
  • Konferensbidrag (refereegranskat)abstract
    • In this work we present a Monte Carlo study of the influence of the presence of a native oxide which isolates the gate in InAs/AlSb high electron mobility transistors (HEMTs) on their dc and ac performance. A good agreement between simulations and experimental results of I-V curves and small signal equivalent circuit parameters has been found for low VDS, where impact ionization is not of importance. The comparison between intrinsic MC simulation results for isolated-gate and Schottky-gate HEMTs reveals a strong influence of the native oxide on the dynamic behavior of the devices, mainly on C gs , g m and f c .
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20.
  • Rodilla, Helena, 1982, et al. (författare)
  • Optimized InP HEMTs for low noise at cryogenic temperatures
  • 2012
  • Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. - 9781467317252 ; , s. 241-244
  • Konferensbidrag (refereegranskat)abstract
    • Experimental results and Monte Carlosimulations have been analyzed and compared at 300 K and 77 K for 130 nm gate-length InP HEMTs optimized for cryogenic 4-8 GHz low-noise amplifiers. The good agreement observed between simulations and experimental data for DC and small signal equivalent circuit parameters validates the simulation model. Compared to 300 K, an increase of 17% in the simulated mean electron velocity under the gate was observed at low drain current (100 mA/mm) when operating the device at 77 K. In addition, a better electron confinement in the channel was noted. The observations are consistent with an increase of the slope of the transconductance versus gate bias with reduced temperature. The high transconductance at low drain current is crucial for low noise operation of the InP HEMT at low temperature.
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21.
  • Schleeh, Joel, 1986, et al. (författare)
  • Cryogenic Ultra-Low Noise Amplification - InP PHEMT vs. GaAs MHEMT
  • 2013
  • Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. - 9781467361316
  • Konferensbidrag (refereegranskat)abstract
    • We present a comparative study of 130 nm high electron mobility transistors (HEMTs) fabricated on pseudomorphic InGaAs/InAlAs/InP (InP PHEMT) and InGaAs/InAlAs/GaAs (GaAs MHEMT) intended for ultra-low noise amplifiers (LNAs). The epitaxial growth, as well as the HEMT process, was performed simultaneously. When integrated in a 4-8 GHz 3-stage LNA at 300 K, the measured average noise temperature was 34 K for the GaAs MHEMT and 27 K for the InP PHEMT. When cooled down to 10 K, the InP PHEMT LNA was improved to 1.6 K, while the GaAs MHEMT LNA was only reduced to 5 K. The reason for the superior cryogenic noise performance of the InP PHEMT compared to the GaAs MHEMT in this study, was found to be a higher quality of pinch-off when cooled down.
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22.
  • Schleeh, Joel, 1986, et al. (författare)
  • Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition
  • 2011
  • Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, Berlin, 22-26 May 2011. - 1092-8669. - 9781457717536
  • Konferensbidrag (refereegranskat)abstract
    • InGaAs/InAlAs/InP HEMTs (InP HEMTs) passivated by Al2O3 atomic layer deposition (ALD) demonstrated improved DC performance compared to Si3N4 plasma enhanced chemical vapour deposition (PECVD). DC measurements have been performed on 130 nm gate-length devices before and after passivation. An increase in maximum drain current density of 20% and extrinsic transconductance of 30% were observed after both ALD and PECVD device passivation. In comparison to PECVD passivated InP HEMTs, ALD passivated devices demonstrated a full suppression of a kink in the I-V characteristics associated with surface traps.
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23.
  • Tångring, Ivar, 1978, et al. (författare)
  • Molecular beam epitaxy growth of A 1.58 μm InGaAs quantum well laser on GaAs
  • 2008
  • Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. - 9781424422593
  • Konferensbidrag (refereegranskat)abstract
    • We demonstrate how MBE growth parameters can be optimized to produce a metamorphic InGaAs QW laser emitting in the 1.55 ?m range. Different techniques to suppress roughening while maintaining low threading dislocation densities are evaluated. Finally, we demonstrate a 50×1250 ?m 2 broad area FabryPerot laser that produces pulsed lasing with a threshold current density of 490 A/cm2 and a wavelength of 1.58 ?m at room temperature.
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24.
  • Wernersson, Lars-Erik (författare)
  • InAs WRAP-gate nanowire transistors
  • 2007
  • Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. ; , s. 527-529
  • Konferensbidrag (refereegranskat)abstract
    • InAs nanowire wrap-gate transistors have been fabricated in a vertical geometry using matrices of 11×11 nanowires. The fabrication process is based on conventional and scalable technologies that are adopted for the nanowire transistors. A SiNx layer is used as gate dielectric and a wrap-gate of 80 nm gate length is formed. These transistors show good DC characteristics with drive currents above 1 mA and a transconductance of 0.28 mS at Vsd=0.5V. The transistors operate in depletion mode. © 2007 IEEE.
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25.
  • Westlund, Andreas, 1985, et al. (författare)
  • Cryogenic DC Characterization of InAs/Al80Ga20Sb Self-Switching Diodes
  • 2013
  • Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. - 9781467361316
  • Konferensbidrag (refereegranskat)abstract
    • DC characterization of an InAs/Al80Ga20Sb self-switching diode for THz detection is presented at 300 K and 6 K. Compared to 300 K, an enhancement of the diode I-V nonlinearity and associated responsivity was observed under zero-bias conditions at 6 K. The intrinsic responsivity was estimated to 490 V/W at 300 K and 4400 V/W at 6 K.
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26.
  • Westlund, Andreas, 1985, et al. (författare)
  • Fabrication and DC characterization of InAs/AlSb self-switching diodes
  • 2012
  • Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. - 9781467317252 ; , s. 65-68
  • Konferensbidrag (refereegranskat)abstract
    • Fabrication and DC measurements of an InAs/AlSb self-switching diode (SSD), aimed for THz detection, is presented. An SSD with a channel width of 160 nm and a trench width of 240 nm was designed and fabricated in a process using an in situ passivation procedure of the oxidation-sensitive trench. Rectifying behavior was observed in the I-V characteristics. The device performance was relatively stable over a period of three months.
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27.
  • Zhao Ternehäll, Huan, 1982, et al. (författare)
  • Characterization of thin film resistors and capacitors integrated on GaAs membranes for submillimeter wave circuit applications
  • 2011
  • Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, Berlin, 22-26 May 2011. - 1092-8669. - 9781457717536 ; , s. 1-4
  • Konferensbidrag (refereegranskat)abstract
    • In this paper we describe the fabrication and characterization of thin film resistors and capacitors integrated on a 3 μm thick GaAs membrane. The thin film resistors and capacitors are based on NiCr and SiN x materials respectively. Onwafer probing DC characterization of these thin film components was performed before removing the GaAs substrate. The corresponding high frequency characterization in the WR-03 frequency band (220-325 GHz) was demonstrated utilizing a membrane-based two-port TRL calibration technique. The measurement results have shown a good agreement with the simulation.
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28.
  • Zhao Ternehäll, Huan, 1982, et al. (författare)
  • Development of a 557 GHz GaAs monolithic membrane-diode mixer
  • 2012
  • Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. - 9781467317252 ; , s. 102-105
  • Konferensbidrag (refereegranskat)abstract
    • We present the development of a monolithically integrated 557 GHz membrane Schottky diode mixer. RF test shows state-of-the-art performance with an optimum receiver noise temperature below 1300 K DSB and an estimated mixer DSB conversion loss of 9 dB and a mixer DSB noise temperature of 1100 K including all losses.
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29.
  • Zota, Cezar, et al. (författare)
  • High Transconductance, f(t) and f(max) in In0.63Ga0.37As FinFETs Using A Novel Fin Formation Technique
  • 2014
  • Ingår i: 26th International Conference on Indium Phosphide and Related Materials (IPRM). - 1092-8669.
  • Konferensbidrag (refereegranskat)abstract
    • We report on In0.63Ga0.37As FinFETs utilizing nanowires grown by selective-area growth as channel. These nanowires are defined by crystallographic planes rather than pattern transfer using etching. The fabricated devices exhibit maximum transconductance g(m,max) = 2.05 mS/um at V-ds = 0.5 V, as well as record-high extrapolated f(t) = 300 GHz and f(max) = 342 GHz, on the non-planar III-V MOSFET platform.
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