| 1. |
- Hopstadius, Bruno, et al.
(författare)
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Invariance of Curie temperature of iron for heating rates up to 10 000 Ks−1
- 1983
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Ingår i: Philosophical Magazine B. - : Taylor & Francis. - 1364-2812 .- 1463-6417. ; 47:6, s. L89-L91
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Tidskriftsartikel (refereegranskat)abstract
- We have shown that the Curie temperature of Fe is unaffected by heating rates up to 10000 Ks−1. This appears to be the first direct evidence, from measurement of bulk properties, that magnetization responds very rapidly to change of temperature through the ferromagnetic—paramagnetic phase transition.
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| 2. |
- Juozapavicius, A., et al.
(författare)
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Ferromagnetic phases in the Kondo lattice model
- 2002
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Ingår i: Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. - : Informa UK Limited. - 0141-8637. ; 82:11, s. 1211-1224
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Tidskriftsartikel (refereegranskat)abstract
- Using an SO (4) invariant density-matrix renormalization group algorithm a sufficient numerical accuracy is achieved to demonstrate new ferromagnetic phase regions inside the paramagnetic area of the one- dimensional antiferromagnetic Kondo lattice model phase diagram. Spin- spin correlation functions, energy gap, number of singlets and other physical properties are investigated in detail. Direct measurements of the magnetization reveal continuous paramagnetic- ferromagnetic phase transitions.
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| 3. |
- Wang, Z., et al.
(författare)
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Characteristics of SrTiO3 thin films deposited on Si by rf magnetron sputtering at various substrate temperatures
- 2002
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Ingår i: Philosophical Magazine B. - : Informa UK Limited. - 1364-2812 .- 1463-6417. ; 82:8, s. 891-903
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Tidskriftsartikel (refereegranskat)abstract
- SrTiO3 (STO) thin films were deposited on p-type Si(100) substrates by rf magnetron sputtering at various substrate temperatures, and their structural and electrical properties were investigated without post-deposition annealing. The thickness of the films was in the range from 300 to 500 nm while the deposition temperature was varied between room temperature and 550°C. Compositional and structural characterizations included X-ray diffraction, Rutherford back-scattering spectroscopy and variable-angle spectroscopic ellipsometry. Metal-insulator-semiconductor diodes with the configuration of Al/STO/p-Si/Al were fabricated and characterized by capacitance-voltage, current voltage and admittance spectroscopy measurements. Depending on the substrate temperatures, the dielectric constant of the films varied between 60 and 120 and the loss factor between 0.019 and 0.051 at 100 kHz. All films showed high charge storage capacity, varying between 1.9 and 3 µm cm-2. However, the films deposited at 200°C showed the lowest density of bulk trapped charges (150nC cm-2) and interface states ((1.2-6.1) × 1011 cm-2 eV-1), and are therefore considered to be the most suitable for device applications.
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