| 1. |
- Petersson, L.-G., et al.
(författare)
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A Pd-MOS structure as a hydrogen sensor in catalytic reactions
- 1984
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Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; A2, s. 1032-
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Tidskriftsartikel (refereegranskat)abstract
- By letting a catalytic reaction involving hydrogen occur on the Pd gate metal of a Pd–MOS structure the amount of hydrogen atoms on the surface can be monitored without any external probes by measuring the dipole induced by the hydrogen atoms that have diffused to the Pd–SiO2 interface. The ability to work over a wide pressure range (10-11 Torr to atm) makes the Pd–MOS structure an interesting device in the study of catalytic reactions. In this article, we will give a short review of some of the many applications of this component. We have combined this technique with other surface sensitive techniques such as UPS, XPS, work function measurements and mass spectrometry and, e.g., studied how the hydrogen adsorption–desorption processes are influenced by alloying the Pd surface with various amounts of Ag, thereby also changing the distribution of d states close to Fermi energy. We have also studied the H2+O→H2O reaction on Pd. It, e.g., turns out that the water reaction rate reaches a maximum when the oxygen coverage approaches zero and that the hydrogen atoms on the surface have a larger lateral mobility.
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| 2. |
- Wang, Xin, et al.
(författare)
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Composition, structure, and dielectric tunability of epitaxial SrTiO3 thin films grown by radio frequency magnetron sputtering
- 1999
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Institute of Physics (AIP). - 0734-2101 .- 1520-8559. ; 17:2, s. 564-570
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial (001) oriented SrTiO3 films have been deposited on LaAlO3(001) substrates by off-axis radio frequency magnetron sputtering in Ar:O-2 gas mixtures at substrate temperatures ranging from 650 to 850 degrees C. For the deposition conditions used, stoichiometric targets yielded 20% Sr-deficient films, whereas Sr-enriched targets (Sr1.1TiO0.9O3.0) resulted in stoichiometric films. The Sr-deficient films had a mosaic structure and a larger lattice parameter in comparison to bulk SrTiO3. The stoichiometric films on the other hand had a much higher crystalline quality in the as-deposited condition. The mosaicity of the latter films was primarily limited by the crystalline quality of the LaAlO3 substrates. The lattice parameters of the stoichiometric films were also smaller than the Sr-deficient ones and closer to the bulk value. The dielectric properties of the stoichiometric films were superior to the Sr-deficient films. For films with a thickness of similar to 300 nm, the typical dielectric constants as measured at similar to 77 K and I MHz were determined to be 820 and 500, for the stoichiometric and Sr-deficient films, respectively. Also the capacitance change, as a direct current bias voltage was applied to an interdigital capacitor, was higher for the stoichiometric film, 27.3% as compared to 8.6% when applying a bias of 300 V at 77 K. We also demonstrate the effectiveness of thermal annealing in improving both crystalline quality and dielectric properties, especially for the Sr-deficient films. (C) 1999 American Vacuum Society. [S0734-2101(99)010002-7].
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| 3. |
- Achenbach, Jan-Ole, et al.
(författare)
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Low temperature oxidation behavior of Mo2BC coatings
- 2020
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : A V S AMER INST PHYSICS. - 0734-2101 .- 1520-8559. ; 38:2
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Tidskriftsartikel (refereegranskat)abstract
- Mo2BC exhibits a unique combination of high stiffness and moderate ductility, enabling the application as a protective and wear resistant coating. As the low temperature oxidation behavior of Mo2BC coatings is unexplored, direct current magnetron sputtered Mo2BC coatings were oxidized at temperatures ranging from 500 to 100 degrees C for up to 28 days. Time-of-flight elastic recoil detection analysis reveals that the onset of oxidation takes place at approximately 300 degrees C as a significant increase in the O content was observed. Crystalline oxide scales containing orthorhombic MoO3 were identified after oxidation for 15 min at 500 degrees C and 10 days at 200 degrees C. Isothermal oxidation at 200 and 100 degrees C exhibits oxide scale thicknesses of 401 +/- 33 and 22 +/- 10 nm after 14 days. Oxidation for 28 days at 100 degrees C exhibits an oxide scale thickness of 13 +/- 3 nm, which is comparable to the aforementioned oxide scale thickness after oxidation for 14 days at 100 degrees C. Based on the combination of mechanical properties and the here reported low temperature oxidation behavior, Mo2BC coatings qualify for applications in solid wood machining and low temperature forming processes at temperatures close to 100 degrees C or below.
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| 4. |
- Ahvenniemi, Esko, et al.
(författare)
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Recommended reading list of early publications on atomic layer deposition-Outcome of the "Virtual Project on the History of ALD"
- 2017
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 35:1
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Forskningsöversikt (refereegranskat)abstract
- Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United States. Up to now, a balanced overview regarding the early history of ALD has been missing; the current list is an attempt to remedy this deficiency.
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| 5. |
- Aijaz, Asim, et al.
(författare)
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Synthesis of hydrogenated diamondlike carbon thin films using neon-acetylene based high power impulse magnetron sputtering discharges
- 2016
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 34:6
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Tidskriftsartikel (refereegranskat)abstract
- Hydrogenated diamondlike carbon (DLC:H) thin films exhibit many interesting properties that can be tailored by controlling the composition and energy of the vapor fluxes used for their synthesis. This control can be facilitated by high electron density and/or high electron temperature plasmas that allow one to effectively tune the gas and surface chemistry during film growth, as well as the degree of ionization of the film forming species. The authors have recently demonstrated by adding Ne in an Ar-C high power impulse magnetron sputtering (HiPIMS) discharge that electron temperatures can be effectively increased to substantially ionize C species [Aijaz et al., Diamond Relat. Mater. 23, 1 (2012)]. The authors also developed an Ar-C2H2 HiPIMS process in which the high electron densities provided by the HiPIMS operation mode enhance gas phase dissociation reactions enabling control of the plasma and growth chemistry [Aijaz et al., Diamond Relat. Mater. 44, 117 (2014)]. Seeking to further enhance electron temperature and thereby promote electron impact induced interactions, control plasma chemical reaction pathways, and tune the resulting film properties, in this work, the authors synthesize DLC: H thin films by admixing Ne in a HiPIMS based Ar/C2H2 discharge. The authors investigate the plasma properties and discharge characteristics by measuring electron energy distributions as well as by studying discharge current characteristics showing an electron temperature enhancement in C2H2 based discharges and the role of ionic contribution to the film growth. These discharge conditions allow for the growth of thick (>1 mu m) DLC: H thin films exhibiting low compressive stresses (similar to 0.5 GPa), high hardness (similar to 25 GPa), low H content (similar to 11%), and density in the order of 2.2 g/cm(3). The authors also show that film densification and change of mechanical properties are related to H removal by ion bombardment rather than subplantation.
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| 6. |
- Alami, Jones, et al.
(författare)
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Ion-assisted Physical Vapor Deposition for enhanced film properties on non-flat surfaces
- 2005
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 23:2, s. 278-280
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Tidskriftsartikel (refereegranskat)abstract
- We have synthesized Ta thin films on Si substrates placed along a wall of a 2-cm-deep and 1-cm-wide trench, using both a mostly neutral Ta flux by conventional dc magnetron sputtering (dcMS) and a mostly ionized Ta flux by high-power pulsed magnetron sputtering (HPPMS). Structure of the grown films was evaluated by scanning electron microscopy, transmission electron microscopy, and atomic force microscopy. The Ta thin film grown by HPPMS has a smooth surface and a dense crystalline structure with grains oriented perpendicular to the substrate surface, whereas the film grown by dcMS exhibits a rough surface, pores between the grains, and an inclined columnar structure. The improved homogeneity achieved by HPPMS is a direct consequence of the high ion fraction of sputtered species.
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| 7. |
- Aleman, Angel, et al.
(författare)
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Ultrahigh vacuum dc magnetron sputter-deposition of epitaxial Pd(111)/Al2O3(0001) thin films
- 2018
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Ingår i: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 36:3
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Tidskriftsartikel (refereegranskat)abstract
- Pd(111) thin films, ∼245 nm thick, are deposited on Al2O3(0001) substrates at ≈0.5Tm, where Tm is the Pd melting point, by ultrahigh vacuum dc magnetron sputtering of Pd target in pure Ar discharges. Auger electron spectra and low-energy electron diffraction patterns acquired in situ from the as-deposited samples reveal that the surfaces are compositionally pure 111-oriented Pd. Double-axis x-ray diffraction (XRD) ω-2θ scans show only the set of Pd 111 peaks from the film. In triple-axis high-resolution XRD, the full width at half maximum intensity Γω of the Pd 111 ω-rocking curve is 630 arc sec. XRD 111 pole figure obtained from the sample revealed six peaks 60°-apart at a tilt angles corresponding to Pd 111 reflections. XRD φ scans show six 60°-rotated 111 peaks of Pd at the same φ angles for 11 23 of Al2O3 based on which the epitaxial crystallographic relationships between the film and the substrate are determined as (111)Pd∥ (0001)Al2O3 with two in-plane orientations of [112]Pd∥ [1120]Al2O3 and [211]Pd∥ [1120]Al2O3. Using triple axis symmetric and asymmetric reciprocal space maps, interplanar spacings of out-of-plane (111) and in-plane (11 2) are found to be 0.2242 ± 0.0003 and 0.1591 ± 0.0003 nm, respectively. These values are 0.18% lower than 0.2246 nm for (111) and the same, within the measurement uncertainties, as 0.1588 nm for (11 2) calculated from the bulk Pd lattice parameter, suggesting a small out-of-plane compressive strain and an in-plane tensile strain related to the thermal strain upon cooling the sample from the deposition temperature to room temperature. High-resolution cross-sectional transmission electron microscopy coupled with energy dispersive x-ray spectra obtained from the Pd(111)/Al2O3(0001) samples indicate that the Pd-Al2O3 interfaces are essentially atomically abrupt and dislocation-free. These results demonstrate the growth of epitaxial Pd thin films with (111) out-of-plane orientation with low mosaicity on Al2O3(0001).
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| 8. |
- Alijan Farzad Lahiji, Faezeh, et al.
(författare)
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Growth and optical properties of NiO thin films deposited by pulsed dc reactive magnetron sputtering
- 2023
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : A V S AMER INST PHYSICS. - 0734-2101 .- 1520-8559. ; 41:6
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Tidskriftsartikel (refereegranskat)abstract
- NiO thin films with varied oxygen contents are grown on Si(100) and c-Al2O3 at a substrate temperature of 300 degrees C using pulsed dc reactive magnetron sputtering. We characterize the structure and optical properties of NiO changes as functions of the oxygen content. NiO with the cubic structure, single phase, and predominant orientation along (111) is found on both substrates. X-ray diffraction and pole figure analysis further show that NiO on the Si(100) substrate exhibits fiber-textured growth, while twin domain epitaxy was achieved on c-Al2O3, with NiO(111) k Al2O3(0001) and NiO[1 (1) over bar0]k Al2O3[10 (1) over bar0] or NiO[(1) over bar 10]k Al2O3[2 (1) over bar(1) over bar0] epitaxial relationship. The oxygen content in NiO films did not have a significant effect on the refractive index, extinction coefficient, and absorption coefficient. This suggests that the optical properties of NiO films remained unaffected by changes in the oxygen content.
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| 9. |
- Alling, Björn, et al.
(författare)
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Theoretical investigation of cubic B1-like and corundum (Cr1−xAlx)2O3 solid solutions
- 2013
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 31:3
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Tidskriftsartikel (refereegranskat)abstract
- First-principles calculations are employed to investigate the stability and properties of cubic rock-salt-like (Cr1−xAlx)2O3 solid solutions, stabilized by metal site vacancies as recently reported experimentally. It is demonstrated that the metal site vacancies can indeed be ordered in a way that gives rise to a suitable fourfold coordination of all O atoms in the lattice. B1-like structures with ordered and disordered metal site vacancies are studied for (Cr0.5Al0.5)2O3 and found to have a cubic lattice spacing close to the values reported experimentally, in contrast to fluorite-like and perovskite structures. The obtained B1-like structures are higher in energy than corundum solid solutions for all compositions, but with an energy offset per atom similar to other metastable systems possible to synthesize with physical vapor deposition techniques. The obtained electronic structures show that the B1-like systems are semiconducting although with smaller band gaps than the corundum structure.
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| 10. |
- Almer, Jonathan, et al.
(författare)
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Microstructural evolution during tempering of arc-evaporated Cr-N coatings
- 2000
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 18:1, s. 121-130
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Tidskriftsartikel (refereegranskat)abstract
- Cr-N coatings were arc-deposited at 50 and 300 V. The changes in the coating microstructure and phase content during tempering were monitored. As a result, the phase stability and activation energies for defect diffusion were determined as a function of ion energy.
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| 11. |
- Andersson, Jon M., et al.
(författare)
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Microstructure of α-alumina thin films deposited at low temperatures on chromia template layers
- 2004
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 22:1, s. 117-121
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Tidskriftsartikel (refereegranskat)abstract
- Radio frequency sputtering has been used to deposit -alumina (-Al2O3) thin films at substrate temperatures of 280–560 °C. The films are shown to be single phased and hard. Nanoindentation gives values of 306±31 and 27±3 GPa for elastic modulus and hardness, respectively, for a substrate temperature of 280 °C. Growth of the phase was achieved by in situ predeposition of a chromia template layer. Chromia crystallizes in the same hexagonal structure as -alumina, with a lattice mismatch of 4.1% in the a- and 4.6% in the c-parameter, and is shown to nucleate readily on the amorphous substrates (silicon with a natural oxide layer). This results in local epitaxy of -alumina on the chromia layer, as is shown by transmission electron microscopy. The alumina grains are columnar with grain widths increasing from 22±7 to 41±9 nm, as the temperature increases from 280 to 560 °C. This is consistent with a surface diffusion dominated growth mode and suggests that -alumina deposition at low temperatures is possible once initial grain nucleation has occurred. Results are also presented demonstrating chromia/-alumina growth on a technological substrate (Haynes230 Ni-based super alloy, Haynes International, Inc.).
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| 12. |
- Axelsson, O., et al.
(författare)
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Reactive evaporation of potassium in CO2 and the formation of bulk intermediates
- 1994
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 12:1, s. 158-160
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Tidskriftsartikel (refereegranskat)abstract
- Potassium vapor condensed in CO2 has been studied by transmission infrared spectroscopy and by total pressure thermal desorption spectroscopy. The results are compared with surface spectroscopic data for CO2 adsorbed on alkali metal overlayers. Both systems show the formation of bulk coordinated oxalate species at cryogenic temperatures and the conversion to carbonate intermediates upon annealing.
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| 13. |
- Baer, Donald R., et al.
(författare)
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XPS guide: Charge neutralization and binding energy referencing for insulating samples
- 2020
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : A V S AMER INST PHYSICS. - 0734-2101 .- 1520-8559. ; 38:3
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Tidskriftsartikel (refereegranskat)abstract
- This guide deals with methods to control surface charging during XPS analysis of insulating samples and approaches to extracting useful binding energy information. The guide summarizes the causes of surface charging, how to recognize when it occurs, approaches to minimize charge buildup, and methods used to adjust or correct XPS photoelectron binding energies when charge control systems are used. There are multiple ways to control surface charge buildup during XPS measurements, and examples of systems on advanced XPS instruments are described. There is no single, simple, and foolproof way to extract binding energies on insulating material, but advantages and limitations of several approaches are described. Because of the variety of approaches and limitations of each, it is critical for researchers to accurately describe the procedures that have been applied in research reports and publications.
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| 14. |
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| 15. |
- Bakhit, Babak, et al.
(författare)
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Controlling the B/Ti ratio of TiBx thin films grown by high-power impulse magnetron sputtering
- 2018
-
Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : A V S AMER INST PHYSICS. - 0734-2101 .- 1520-8559. ; 36:3
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Tidskriftsartikel (refereegranskat)abstract
- TiBx thin films grown from compound TiB2 targets by magnetron sputter deposition are typically highly over-stoichiometric, with x ranging from 3.5 to 2.4, due to differences in Ti and B preferential-ejection angles and gas-phase scattering during transport from the target to the substrate. Here, the authors demonstrate that stoichiometric TiB2 films can be obtained using highpower impulse magnetron sputtering (HiPIMS) operated in power-controlled mode. The B/Ti ratio x of films sputter-deposited in Ar is controllably varied from 2.08 to 1.83 by adjusting the length of HiPIMS pulses t(on) between 100 and 30 mu s, while maintaining average power and pulse frequency constant. This results in peak current densities J(T), peak ranging from 0.27 to 0.88 A/cm(2). Energy- and time-resolved mass spectrometry analyses of the ion fluxes incident at the substrate position show that the density of metal ions increases with decreasing t(on) due to a dramatic increase in J(T, peak) resulting in the strong gas rarefaction. With t(on)amp;lt;60 mu s (J(T),(peak)amp;gt; 0.4 A/cm(2)), film growth is increasingly controlled by ions incident at the substrate, rather than neutrals, as a result of the higher plasma dencity and, hence, electron-impact ionization probablity. Thus, since sputter- ejected Ti atoms have a higher probability of being ionized than B atoms, due to their lower first-ionization potential and larger ionization cross-section, the Ti concentration in as-deposited films increases with decreasing ton (increasing J(T,peak)) as ionized sputtered species are steered to the substrate by the plasma in order to maintain charge neutrality. Published by the AVS.
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| 16. |
- Bakhit, Babak
(författare)
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Oxidation properties of quaternary Zr-based diboride thin films grown by hybrid high-power impulse/DC magnetron co-sputtering
- 2024
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : A V S AMER INST PHYSICS. - 0734-2101 .- 1520-8559. ; 42:1
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- Sputter-deposited transition metal diborides are subject of increasing attention for protective hard coatings. However, they suffer from high brittleness and rapid oxidation. Alloying with Ta increases their toughness, but their oxidation resistance requires further enhancement. Here, the influence of adding Si on the microstructure, mechanical, and oxidation properties of quaternary Zr1-(x + y)TaxSiyBz thin films grown by hybrid high-power impulse/DC magnetron co-sputtering (ZrB2-DCMS/Ta-HiPIMS/Si-DCMS) is studied. The layers are deposited at two different conditions of Ta-target HiPIMS powers and frequencies (30 W/100 Hz and 60 W/200 Hz series) with Si-target DCMS powers P-Si = 0, 10, 15, and 20 W, while the ZrB2-target DCMS power is maintained constant at 200 W. For the 30 W/100 Hz series, x decreases from 0.20 to 0.15, y increases from 0 to 0.22, and z decreases from 2.0 to 1.8 by increasing P-Si. The Ta/metal ratio remains constant at x = 0.3 for the 60 W/200 Hz series, while y increases from 0 to 0.1, and z decreases from 1.7 to 1.4. All layers show columnar growth and crystallize in a hexagonal-diboride structure, but crystal orientations change by increasing P-Si. The 60 W/200 Hz series have much denser microstructure than the 30 W/100 Hz series. The 60 W/200 Hz series have high hardness values (>= 35 GPa), while the hardness of the 30 W/100 Hz series significantly decreases from similar to 37 to similar to 21 GPa as a function of P-Si. Zr0.7Ta0.3B1.7 has markedly better high-temperature oxidation resistance than Zr0.8Ta0.2B2.0 due to the formation of protective B-containing oxide scales. Alloying with Si considerably decreases the oxidation rate of the 30 W/100 Hz series owing to the formation of oxide scales containing a ZrSiO4 phase with a thin Si oxide top layer; however, the oxidation rate increases for the 60 W/200 Hz series as these quaternary alloys do not contain sufficiently high B and Si to form oxidation protective barriers.
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| 17. |
- Bakhit, Babak, et al.
(författare)
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Strategy for simultaneously increasing both hardness and toughness in ZrB2-rich Zr1-xTaxBy thin films
- 2019
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : A V S AMER INST PHYSICS. - 0734-2101 .- 1520-8559. ; 37:3
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Tidskriftsartikel (refereegranskat)abstract
- Refractory transition-metal diborides exhibit inherent hardness. However, this is not always sufficient to prevent failure in applications involving high mechanical and thermal stress, since hardness is typically accompanied by brittleness leading to crack formation and propagation. Toughness, the combination of hardness and ductility, is required to avoid brittle fracture. Here, the authors demonstrate a strategy for simultaneously enhancing both hardness and ductility of ZrB2-rich thin films grown in pure Ar on Al2O3(0001) and Si(001) substrates at 475 degrees C. ZrB2.4 layers are deposited by dc magnetron sputtering (DCMS) from a ZrB2 target, while Zr1-xTaxBy alloy films are grown, thus varying the B/metal ratio as a function of x, by adding pulsed high-power impulse magnetron sputtering (HiPIMS) from a Ta target to deposit Zr1-xTaxBy alloy films using hybrid Ta-HiPIMS/ZrB2-DCMS sputtering with a substrate bias synchronized to the metal-rich portion of each HiPIMS pulse. The average power P-Ta (and pulse frequency) applied to the HiPIMS Ta target is varied from 0 to 1800W (0 to 300 Hz) in increments of 600W (100 Hz). The resulting boron-to-metal ratio, y = B/(Zr+Ta), in as-deposited Zr1-xTaxBy films decreases from 2.4 to 1.5 as P-Ta is increased from 0 to 1800W, while x increases from 0 to 0.3. A combination of x-ray diffraction (XRD), glancing-angle XRD, transmission electron microscopy (TEM), analytical Z-contrast scanning TEM, electron energy-loss spectroscopy, energy-dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy, and atom-probe tomography reveals that all films have the hexagonal AlB2 crystal structure with a columnar nanostructure, in which the column boundaries of layers with 0 amp;lt;= x amp;lt; 0.2 are B-rich, whereas those with x amp;gt;= 0.2 are Ta-rich. The nanostructural transition, combined with changes in average column widths, results in an similar to 20% increase in hardness, from 35 to 42 GPa, with a simultaneous increase of similar to 30% in nanoindentation toughness, from 4.0 to 5.2MPa root m. Published by the AVS.
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| 18. |
- Bakhit, Babak, 1983-, et al.
(författare)
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Systematic compositional analysis of sputter-deposited boron-containing thin films
- 2021
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 39:6
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Tidskriftsartikel (refereegranskat)abstract
- Boron-containing materials exhibit a unique combination of ceramic and metallic properties that are sensitively dependent on their given chemical bonding and elemental compositions. However, determining the composition, let alone bonding, with sufficient accuracy is cumbersome with respect to boron, being a light element that bonds in various coordinations. Here, we report on the comprehensive compositional analysis of transition-metal diboride (TMBx) thin films (TM = Ti, Zr, and Hf) by energy-dispersive x-ray spectroscopy (EDX), x-ray photoelectron spectroscopy (XPS), time-of-flight elastic recoil detection analysis (ToF-ERDA), Rutherford backscattering spectrometry (RBS), and nuclear reaction analysis (NRA). The films are grown on Si and C substrates by dc magnetron sputtering from stoichiometric TMB2 targets and have hexagonal AlB2-type columnar structures. EDX considerably overestimates B/TM ratios, x, compared to the other techniques, particularly for ZrBx. The B concentrations obtained by XPS strongly depend on the energy of Ar+ ions used for removing surface oxides and contaminants prior to analyses and are more reliable for 0.5 keV Ar+. ToF-ERDA, RBS, and NRA yield consistent compositions in TiBx. They also prove TiBx and ZrBx films to be homogeneous with comparable B/TM ratios for each film. However, ToF-ERDA, employing a 36-MeV 127I8+ beam, exhibits challenges in depth resolution and quantification of HfBx due to plural and multiple scattering and associated energy loss straggling effects. Compared to ToF-ERDA, RBS (for the film grown on C substrates) and NRA provide more reliable B/Hf ratios. Overall, a combination of methods is recommended for accurately pinpointing the compositions of borides that contain heavy transition metals.
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| 19. |
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| 20. |
- Bakoglidis, Konstantinos D., et al.
(författare)
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Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering
- 2015
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 33:5
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Tidskriftsartikel (refereegranskat)abstract
- Amorphous carbon nitride (a-CNx) thin films were deposited on steel AISI52100 and Si(001) substrates using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited at a low substrate temperature of 150 °C and a N2/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage (Vs) was varied from 20 V to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED), while the film morphology was investigated by scanning electron microscopy (SEM). All films possessed amorphous microstructure with clearly developed columns extending throughout the entire film thickness. Layers grown with the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the technique used. Voids closed and dense films formed at Vs ≥ 60 V, Vs ≥ 100 V and Vs = 120 V for MFMS, DCMS and HiPIMS, respectively. X-ray photoelectron spectroscopy (XPS) revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis (ERDA) showed that Ar content varied between 0 and 0.8 at% and increases as a function of Vs for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with stress between – 0.4 and – 1.2 GPa for all Vs values, while for CNx films deposited by MFMS σ = – 4.2 GPa. Nanoindentation showed a significant increase in film hardness and reduced elastic modulus with increasing Vs for all techniques. The harder films were produced by MFMS with hardness as high as 25 GPa. Low friction coefficients, between 0.05 and 0.06, were recorded for all films. Furthermore, CNx films produced by MFMS and DCMS at Vs = 100 V and 120 V presented a high wear resistance with wear coefficients of k ≤ 2.3 x 10-5 mm3/Nm.
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| 21. |
- Baránková, Hana, et al.
(författare)
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Cold Atmospheric Plasma in Nitrogen and Air Generated by the Hybrid Plasma Source
- 2006
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 24:4, s. 1410-1413
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Tidskriftsartikel (refereegranskat)abstract
- Generation of long plumes of cold atmospheric plasma in nitrogen and air has been successfully performed by the hybrid hollow electrode activated discharge (H-HEAD) source. The source with a simple cylindrical electrode terminated by a gas nozzle combines the microwave antenna plasma with the hollow cathode plasma generated inside the gas nozzle by pulsed dc power. The H-HEAD source is capable of generating up to 10 cm long plumes in air at microwave powers below 500 W and at air flow rates as low as 100 sccm (standard cubic centimeter per minute). The corresponding flow rates in the nitrogen plasma are even less than 80 sccm. The discharges in air and nitrogen have similar shapes and are comparable with the corresponding plasma columns in argon. A comparison of the optical emission spectra of the plasma in nitrogen and air is presented. The temperatures generated on steel substrates by interaction with nitrogen and air plasma columns at different microwaves and dc powers are compared with the corresponding effects in argon plasma.
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| 22. |
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| 23. |
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| 24. |
- Barker, Paul Michael, et al.
(författare)
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Modified high power impulse magnetron sputtering process for increased deposition rate of titanium
- 2013
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 31:6, s. 060604-
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Tidskriftsartikel (refereegranskat)abstract
- A modified version of high power impulse magnetron sputtering (HiPIMS) has been used to deposit titanium films at higher deposition rates than for conventional HiPIMS while maintaining similar pulse voltages and peak currents. In the present study, additional control parameters are explored through the chopping of the HiPIMS pulse into a pulse sequence. Experiments show that the use of sequences allows for an increase of the deposition rate of more than 45% compared to conventional HiPIMS. The increase in deposition rate is ascribed to a combination of reduced gas rarefaction effects, prevention of sustained self-sputtering, and a relaxation of ion trapping.
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| 25. |
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| 26. |
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| 27. |
- Berg, Sören, et al.
(författare)
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Atom assisted sputtering yield amplification
- 1992
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - 0734-2101 .- 1520-8559. ; 10:4, s. 1592-1596
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Tidskriftsartikel (refereegranskat)
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| 28. |
- Berg, Sören, et al.
(författare)
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Ion assisted selective thin film deposition
- 1986
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - 0734-2101 .- 1520-8559. ; 4:3, s. 448-
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Tidskriftsartikel (refereegranskat)
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| 29. |
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| 30. |
- Berg, Sören, et al.
(författare)
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Process modelling of reactive sputtering
- 1989
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - 0734-2101 .- 1520-8559. ; 7:3, s. 1225-1229
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Tidskriftsartikel (refereegranskat)
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| 31. |
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| 32. |
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| 33. |
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| 34. |
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| 35. |
- Blom, Hans-Olof, et al.
(författare)
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Reactively sputtered titanium boride thin films
- 1989
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - 0734-2101 .- 1520-8559. ; 7:2, s. 162-165
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Tidskriftsartikel (refereegranskat)
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| 36. |
- Blom, Hans-Olof, et al.
(författare)
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Removal of RSE induced damages in silicon
- 1986
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - 0734-2101 .- 1520-8559. ; 4:3, s. 752-
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Tidskriftsartikel (refereegranskat)
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| 37. |
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| 38. |
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| 39. |
- Bock, Florian, et al.
(författare)
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Active learning with moment tensor potentials to predict material properties: Ti0.5Al0.5N at elevated temperature
- 2024
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : A V S AMER INST PHYSICS. - 0734-2101 .- 1520-8559. ; 42:1
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Tidskriftsartikel (refereegranskat)abstract
- Transition metal nitride alloys possess exceptional properties, making them suitable for cutting applications due to their inherent hardness or as protective coatings due to corrosion resistance. However, the computational demands associated with predicting these properties using ab initio methods can often be prohibitively high at the conditions of their operation at cutting tools, that is, at high temperatures and stresses. Machine learning approaches have been introduced into the field of materials modeling to address the challenge. In this paper, we present an active learning workflow to model the properties of our benchmark alloy system cubic B1 Ti0.5Al0.5N at temperatures up to 1500 K. With a minimal requirement of prior knowledge about the alloy system for our workflow, we train a moment tensor potential (MTP) to accurately model the material's behavior over the entire temperature range and extract elastic and vibrational properties. The outstanding accuracy of MTPs with relatively little training data demonstrates that the presented approach is highly efficient and requires about two orders of magnitude less computational resources than state-of-the-art ab initio molecular dynamics.
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| 40. |
- Bras, Patrice, et al.
(författare)
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Investigation of blister formation in sputtered Cu 2ZnSnS 4 absorbers for thin film solar cells
- 2015
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 33:6
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Tidskriftsartikel (refereegranskat)abstract
- Blister formation in Cu2ZnSnS4 (CZTS) thin films sputtered from a quaternary compound target is investigated. While the thin film structure, composition, and substrate material are not correlated to the blister formation, a strong link between sputtering gas entrapment, in this case argon, and blistering effect is found. It is shown that argon is trapped in the film during sputtering and migrates to locally form blisters during the high temperature annealing. Blister formation in CZTS absorbers is detrimental for thin film solar cell fabrication causing partial peeling of the absorber layer and potential shunt paths in the complete device. Reduced sputtering gas entrapment, and blister formation, is seen for higher sputtering pressure, higher substrate temperature, and change of sputtering gas to larger atoms. This is all in accordance with previous publications on blister formation caused by sputtering gas entrapment in other materials.
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| 41. |
- Brenning, Nils, et al.
(författare)
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Optimization of HiPIMS discharges : The selection of pulse power, pulse length, gas pressure, and magnetic field strength
- 2020
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 38:3
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Tidskriftsartikel (refereegranskat)abstract
- In high power impulse magnetron sputtering (HiPIMS) operation, there are basically two goals: a high ionized flux fraction of the sputtered target material and a high deposition rate. In this work, it is demonstrated that the former always comes at the cost of the latter. This makes a choice necessary, referred to as the HiPIMS compromise. It is here proposed that this compromise is most easily made by varying the discharge current amplitude, which opens up for optimization of additionally four external process parameters: the pulse length, the working gas pressure, the magnetic field strength, and the degree of magnetic unbalance to achieve the optimum combination of the ionized flux fraction and the deposition rate. As a figure of merit, useful for comparing different discharges, ( 1 - beta t ) is identified, which is the fraction of ionized sputtered material that escapes back-attraction toward the cathode target. It is shown that a discharge with a higher value of ( 1 - beta t ) always can be arranged to give better combinations of ionization and deposition rate than a discharge with a lower ( 1 - beta t ). Maximization of ( 1 - beta t ) is carried out empirically, based on data from two discharges with Ti targets in Ar working gas. These discharges were first modeled in order to convert measured plasma parameters to values of ( 1 - beta t ). The combined effects of varying the different process parameters were then analyzed using a process flow chart model. The effect of varying the degree of unbalance in the studied range was small. For the remaining three parameters, it is found that optimum is achieved by minimizing the magnetic field strength, minimizing the working gas pressure, and minimizing the pulse length as far as compatible with the requirement to ignite and maintain a stable discharge.
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| 42. |
- Broitman, Esteban, et al.
(författare)
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Microstructural, nanomechanical, and microtribological properties of Pb thin films prepared by pulsed laser deposition and thermal evaporation techniques
- 2016
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : A V S AMER INST PHYSICS. - 0734-2101 .- 1520-8559. ; 34:2, s. 021505-
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Tidskriftsartikel (refereegranskat)abstract
- In this work, the authors compare the morphological, structural, nanomechanical, and microtribological properties of Pb films deposited by thermal evaporation (TE) and pulsed laser deposition (PLD) techniques onto Si (111) substrates. Films were investigated by scanning electron microscopy, surface probe microscopy, and x-ray diffraction in theta-2 theta geometry to determine their morphology, root-mean-square (RMS) roughness, and microstructure, respectively. TE films showed a percolated morphology with densely packed fibrous grains while PLD films had a granular morphology with a columnar and tightly packed structure in accordance with the zone growth model of Thornton. Moreover, PLD films presented a more polycrystalline structure with respect to TE films, with RMS roughness of 14 and 10 nm, respectively. Hardness and elastic modulus vary from 2.1 to 0.8 GPa and from 14 to 10 GPa for PLD and TE films, respectively. A reciprocal friction test has shown that PLD films have lower friction coefficient and wear rate than TE films. Our study has demonstrated for first time that, at the microscale, Pb films do not show the same simple lubricious properties measured at the macroscale. (C) 2015 American Vacuum Society.
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| 43. |
- Broitman, Esteban, et al.
(författare)
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Nanomechanical and microtribological properties of yttrium thin films for photocathode engineering
- 2019
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : A V S AMER INST PHYSICS. - 0734-2101 .- 1520-8559. ; 37:3
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Tidskriftsartikel (refereegranskat)abstract
- The authors study the nanomechanical and microtribological properties of yttrium (Y) thin films deposited by pulsed laser deposition on Cu polycrystalline substrates. Nanoindentation tests reveal that such films have a high hardness of H = 2.3 GPa and a reduced elastic modulus of 71.7 GPa with respect to the Cu substrates. The friction coefficient between a diamond tip and the Y film reaches a steady state value of mu similar to 0.34, lower than that for the Cu (mu similar to 0.38). Moreover, nano-scratch experiments show that Y films are more scratch-resistant than the Cu substrates, probably due to their greater hardness, higher elastic recovery, and lower friction coefficient. Their results confirm that the mechanical and tribological properties of the Y films are suitable for designing and fabricating scratch-resistant hybrid photocathodes and can reduce instabilities and unwanted discharges in the cavity of the radio-frequency gun. Furthermore, the low surface roughness and the low work function of the material are important characteristics for a photocathode based on the Y thin film for the production of high-brightness electron beams. Published by the AVS.
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| 44. |
- Broitman, Esteban, 1958-, et al.
(författare)
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Novel method for in-situ and simultaneous nanofriction and nanowear characterization of materials
- 2015
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : America Vacuum Society. - 0734-2101 .- 1520-8559. ; 34
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Tidskriftsartikel (refereegranskat)abstract
- Nowadays, there is an increased need to know the nanotribological properties of protectivecoatings used in part devices operating under nano- and microcontact situations, e.g., hard diskdrives, magnetic heads, microelectromechanical systems and microsensors, etc. Therefore, there isa demand for instruments and methods testing friction and wear at the nano- and microscales. Inthis work, the authors present a new methodology to measure simultaneously the friction, and wearof a surface. The authors have designed an experiment, where a probe is permanently scanning a10 lm track in a reciprocal movement. Different loads are applied in order to obtain thetopographic information which is used to calculate the wear rate and roughness evolution. Forcelateral sensors register simultaneously the friction force variations. The experimental input data areinformation vectors that contain: load (lN), friction force (lN), vertical Z displacement (nm),lateral X displacement (nm), and time (s). The data are processed using a simple program runningin MathLabVR which eliminates the thermal drift. The software output gives the resulting frictioncoefficient, track roughness, and wear rate as a function of the running cycles of the probe. Thenew method builds a novel bridge to relate tribological mechanisms at different scales
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| 45. |
- Broitman, E., et al.
(författare)
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Structural and mechanical properties of diamond-like carbon films deposited by direct current magnetron sputtering
- 2003
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 21:4, s. 851-859
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Tidskriftsartikel (refereegranskat)abstract
- A systematic study of physical properties of sputter-deposited DLC films was performed as a function of flux ratio and ion energy. The energy and flux ions and neutral atoms impinging on the surface of the growing films were deduced from Langmuir probe measurements and theoretical calculations. The bombardment of growing films by the energetic particles led to changes in microstructure and mechanical properties. Results suggest that the presence of defective graphite formed by subplanted C and Ar atoms is the dominant influence on the mechanical properties of the DLC films.
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| 46. |
- Broitman, E., et al.
(författare)
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Structural, electrical, and optical properties of diamondlike carbon films deposited by dc magnetron sputtering
- 2003
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Ingår i: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559.
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- The electrical and optical properties of diamondlike carbon films deposited by direct current magnetron sputtering on Si substrates at room temperature have been measured as a function of the ion energy (Eion) and ion-to-carbon flux (Jion/JC). The results show that, in the ranges of 5 eV⩽Eion⩽85 eV and 1.1⩽Jion/JC⩽6.8, the presence of defective graphite formed by subplanted C and Ar atoms, voids, and the surface roughness, are the dominant influences on the resistivity and optical absorption
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| 47. |
- Buttera, Sydney C., et al.
(författare)
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Thermal study of an indium trisguanidinate as a possible indium nitride precursor
- 2018
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : A V S AMER INST PHYSICS. - 0734-2101 .- 1520-8559. ; 36:1
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Tidskriftsartikel (refereegranskat)abstract
- Tris-N,N,-dimethyl-N,N -diisopropylguanidinatoindium(III) has been investigated both as a chemical vapor deposition precursor and an atomic layer deposition precursor. Although deposition was satisfactory in both cases, each report showed some anomalies in the thermal stability of this compound, warrenting further investigation, which is reported herein. The compound was found to decompose to produce diisopropylcarbodiimide both by computational modeling and solution phase nuclear magnetic resonance characterization. The decomposition was shown to have an onset at approximately 120 degrees C and had a constant rate of decomposition from 150 to 180 degrees C. The ultimate decomposition product was suspected to be bisdimethylamidoN, N,-dimethyl-N,N -diisopropylguanidinato-indium(III), which appeared to be an intractable, nonvolatile polymer. Published by the AVS.
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| 48. |
- Böhlmark, Johan, et al.
(författare)
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Ionization of sputtered metals in high power pulsed magnetron sputtering
- 2005
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 23:1, s. 18-22
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Tidskriftsartikel (refereegranskat)abstract
- The ion to neutral ratio of the sputtered material have been studied for high power pulsed magnetron sputtering and compared with a continuous direct current (dc) discharge using the same experimental setup except for the power source. Optical emission spectroscopy (OES) was used to study the optical emission from the plasma through a side window. The emission was shown to be dominated by emission from metal ions. The distribution of metal ionized states clearly differed from the distribution of excited states, and we suggest the presence of a hot dense plasma surrounded by a cooler plasma. Sputtered material was ionized close to the target and transported into a cooler plasma region where the emission was also recorded. Assuming a Maxwell–Boltzmann distribution of excited states the emission from the plasma was quantified. This showed that the ionic contribution to the recorded spectrum was over 90% for high pulse powers. Even at relatively low applied pulse powers, the recorded spectra were dominated by emission from ions. OES analysis of the discharge in a continuous dc magnetron discharge was also made, which demonstrated much lower ionization.
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| 49. |
- Böör, Katalin, et al.
(författare)
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On the growth kinetics, texture, microstructure, and mechanical properties of tungsten carbonitride deposited by chemical vapor deposition
- 2022
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Institute of Physics (AIP). - 0734-2101 .- 1520-8559. ; 40:5
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Tidskriftsartikel (refereegranskat)abstract
- Tungsten carbonitride [W(C,N)] was deposited on cemented carbide substrates by chemical vapor deposition (CVD) in a hot-wall reactor using tungsten hexafluoride (WF6), acetonitrile (CH3CN), and hydrogen (H-2) as precursors. Tungsten carbides and nitrides with a hexagonal 6-WC type structure are generally difficult to obtain by CVD. Here, it was found that the combination of WF6 and CH3CN precursors enabled the deposition of W(C,N) coatings with a delta-WC type structure and columnar grains. A process window as a function of the deposition temperature and precursor partial pressures was determined to establish the conditions for the deposition of such coatings. Scanning electron microscopy, x-ray diffraction, electron backscatter diffraction, and elastic recoil detection analysis were used for the investigation of the coating thickness, microstructure, texture, and composition. From the investigation of the kinetics, it was concluded that the growth was mainly controlled by surface kinetics with an apparent activation energy of 77 kJ/mol, yielding an excellent step coverage. The partial reaction orders of the reactants together with their influence on the microstructure and coating composition was further used to gain a deeper understanding of the growth mechanism. Within the process window, the microstructure and the texture of the W(C,N) coatings could be tailored by the process parameters, enabling microstructural engineering with tuning of the mechanical properties of the W(C,N) coatings. The nanoindentation hardness (36.6-45.7 GPa) and elastic modulus (564-761 GPa) were found to be closely related to the microstructure.
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| 50. |
- Carlsson, JRA, et al.
(författare)
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A new silicon phosphide, Si12P5 : Formation conditions, structure, and properties
- 1997
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Ingår i: Journal of Vacuum Science and Technology A. - : American Vacuum Society. - 0734-2101. ; 15:2, s. 394-401
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Tidskriftsartikel (refereegranskat)abstract
- The formation conditions, structure, and properties of the recently discovered phosphide, Si12P5 (initially assigned Si7P3), have been studied using x-ray diffraction, high-resolution transmission electron microscopy, photospectrometry, and a four-point probe. The phosphide formed in amorphous Si-P alloy thin films with 30, 35 and 44 at. % P after annealing at 1000°C for 30 min. During annealing at 1100°C, the phosphide dissociated through P evaporation. The Si12P5 phase is proposed to have rhombohedral symmetry with a P31m space group and a C5W12 structure. The hexagonal lattice parameters measured were a = 6.16±0.05 Å and c = 13.17±0.01 Å. The optical band gap and the electrical resistivity of the phosphide were determined to be 1.55 eV and 5 mΩ cm, respectively. The Gibbs free energy diagram for the Si-P system was modified to include this new Si12P5 phase.
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