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1.
  • Afrasiabi, Roodabeh, et al. (author)
  • Microwave mediated synthesis of semiconductor quantum dots
  • 2012
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 9:7, s. 1551-1556
  • Journal article (peer-reviewed)abstract
    • Colloidal quantum dots (QD) have tuneable optoelectronic properties and can be easily handled by simple solution processing techniques, making them very attractive for a wide range of applications. Over the past decade synthesis of morphology controlled high quality (crystalline, monodisperse) colloidal QDs by thermal decomposition of organometallic precursors has matured and is well studied. Recently, synthesis of colloidal QDs by microwave irradiation as heating source is being studied due to the inherently different mechanisms of heat transfer, when compared to solvent convection based heating. Under microwave irradiation, polar precursor molecules directly absorb the microwave energy and heat up more efficiently. Here we report synthesis of colloidal II-VI semiconductor QDs (CdS, CdSe, CdTe) by microwave irradiation and compare it with conventional synthesis based on convection heating. Our findings show that QD synthesis by microwave heating is more efficient and the chalcogenide precursor strongly absorbs the microwave radiation shortening the reaction time and giving a high reaction yield.
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2.
  • Berlind, Torun, 1965-, et al. (author)
  • Effects of ion concentration on refractive indices offluids measured by the minimum deviation technique
  • 2008
  • In: Physica Status Solidi. C, Current topics in solid state physics. - Weinheim : WILEY-VCH Verlag GmbH & Co. KGaA. - 1610-1634 .- 1610-1642. ; 5:5, s. 1249-1252
  • Journal article (peer-reviewed)abstract
    • The prism minimum deviation technique has been used to measure the fluid dependence of refractive indices. Fluids with varying ion concentration (0 to 1.0 M) and varying protein concentration (0.01-10 mg/ml) have been examined and the measurements show that these parameters influence the refractive index values. Also it is shown by simulations that it is important to take the change of refractive index of the fluid into account when evaluating insitu protein adsorption measurements.
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3.
  • Bi, Zhaoxia, et al. (author)
  • InN quantum dots on GaN nanowires grown by MOVPE
  • 2014
  • In: physica status solidi (c). - : Wiley. - 1862-6351 .- 1610-1642 .- 1610-1634. ; 11, s. 421-424
  • Journal article (peer-reviewed)abstract
    • In this work, growth of InN quantum dots (QDs) on GaN nanowires (NWs) by metal-organic vapour phase epitaxy is demonstrated, illustrating the feasibility to combine 0D and 1D structures for nitride semiconductors. Selective area growth was used to generate arrays of c-oriented GaN NWs using Si3N4 as the mask material. In general, InN QDs tend to form at the NW edges between the m-plane side facets, but the QD growth can also be tuned to the side facets by controlling the growth temperature and the growth rate. TEM characterization reveals that I1-type stacking faults are formed in the QDs and originate from the misfit dislocations at the InN/GaN interface. Photoluminescence measurement at 4 K shows that the peak shifts to high energy with reduced dot size. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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4.
  • Chulapakorn, Thawatchart, 1988-, et al. (author)
  • MeV ion irradiation effects on the luminescence properties of Si-implanted SiO2-thin films
  • 2016
  • In: Physica Status Solidi (C) Current Topics in Solid State Physics. - : Wiley-VCH Verlagsgesellschaft. - 1862-6351 .- 1610-1634 .- 1610-1642. ; 13:10-12, s. 921-926
  • Journal article (peer-reviewed)abstract
    • The effects of MeV heavy ion irradiation at varying fluence and flux on excess Si, introduced in SiO2 by keV ion implantation, are investigated by photoluminescence (PL). From the PL peak wavelength (λ) and decay lifetime (τ), two PL sources are distinguished: i) quasi-direct recombination of excitons of Si-nanoparticles (SiNPs), appearing after thermal annealing (λ > 720 nm, τ ∼ μs), and ii) fast-decay PL, possibly due to oxide-related defects (λ ∼ 575-690 nm, τ ∼ ns). The fast-decay PL (ii) observed before and after ion irradiation is induced by ion implantation. It is found that this fast-decay luminescence decreases for higher irradiation fluence of MeV heavy ions. After thermal annealing (forming SiNPs), the SiNP PL is reduced for samples irradiated by MeV heavy ions but found to stabilize at higher level for higher irradiation flux; the (ii) band vanishes as a result of annealing. The results are discussed in terms of the influence of electronic and nuclear stopping powers.
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5.
  • Dagnelund, Daniel, et al. (author)
  • Effect of thermal annealing on defects in post-growth hydrogenated GaNP
  • 2013
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : John Wiley & Sons. - 1610-1634 .- 1610-1642. ; 10:4, s. 561-563
  • Journal article (peer-reviewed)abstract
    • Effect of thermal annealing on paramagnetic centers in post-growth hydrogenated GaN0.0081P0.9919 epilayer is examined by means of photoluminescence and optically detected magnetic resonance (ODMR) techniques. In recent studies, several Ga-interstitial (Gai) related centers were found to be activated by the presence of hydrogen in the hydrogenated GaNP alloys. These centers compete with near-band edge radiative recombination. Annealing at 400 ºC in Ar-ambient is found to cause quenching of the Gai-related ODMR signals that were activated by post-growth hydrogenation. We tentatively ascribe this effect to dissociation of the H-Gai complexes and subsequent out-diffusion of H.
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6.
  • Darakchieva, V., et al. (author)
  • Phonons in strained AlGaN/GaN superlattices
  • 2007
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 4:1, s. 170-174
  • Journal article (peer-reviewed)abstract
    • Phonons in strained AlGaN/GaN superlattices (SLs) with constant periods but different Al composition have been studied using a combination of infrared spectroscopic ellipsometry and Raman scattering spectroscopy. The following SL modes were identified: i) AlGaN localized E1(TO) modes identified for the first time and AlGaN localized A1 (LO) phonons; ii) GaN localized E2, E1(TO) and A1(LO) phonons; iii) delocalized E1(LO) phonons; iv) A1(TO) phonon; v) two modes around 660 cm-1 and 594-625 cm-1, respectively, not predicted by theory. The effects of strain and composition on the phonon frequencies were established and discussed.
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7.
  • Eberlein, T.A.G., et al. (author)
  • Movement and pinning of dislocations in SiC
  • 2007
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 4:8, s. 2923-2928
  • Journal article (peer-reviewed)abstract
    • SiC bipolar devices show a degradation under forward-biased operation due to the formation and rapid propagation of stacking faults in the active region of the device. It is believed that the observed rapid stacking fault growth is due to a recombination-enhanced dislocation glide (REDG) mechanism at the bordering partial dislocations having either Si or C core atoms. We investigated the effect of charge on the dislocation kinks and found that only silicon kinks have a deep filled band above the valence band. Trapping of holes into this band permits dislocation glide at room temperature. This mechanism is distinct from REDG as it requires only holes to be trapped at a Si partial and not in addition electrons in stacking fault states. We furthermore looked at the pinning of dislocations by nitrogen and boron and found a strong pinning of the C core by N and of the Si core by B.
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8.
  • Fokine, Michael, 1970-, et al. (author)
  • Spectral features of specular reflection from nanoparticle films
  • 2010
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 8:9, s. 2673-2675
  • Journal article (peer-reviewed)abstract
    • In this work we analyze the internal reflection (Fresnel reflection) from Au nanoparticles on the end face of optical fibers. We demonstrate that changes in the refractive index of the surrounding medium can be detected by shifts in the reflection spectra associated with changes in the Localized Surface Plasmon Resonance of the Au-Nanoparticles. The spectral response is simulated using a model based on the interference in multilayer structures and can be described by transfer-matrix method.
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9.
  • Gogova, D., et al. (author)
  • HVPE GaN substrates : growth and characterization
  • 2010
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 7:7-8, s. 1756-1759
  • Journal article (peer-reviewed)abstract
    • GaN substrates with low dislocation densities were prepared by halide vapor-phase epitaxy (HVPE) on c-plane sapphire and by means of a post-growth laser-induced lift-off or natural stress-induced (self-) separation process. The HVPE growth on InGaN/GaN buffer layers and subsequent self-separation method was seen as advantageous, in comparison with the laser-induced lift-off one, in terms of lower cost and better crystalline quality of the GaN material obtained. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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10.
  • Grini, Sigbjörn, et al. (author)
  • Secondary ion mass spectrometry as a tool to study selenium gradient in Cu2ZnSn(S,Se)4
  • 2017
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; :6
  • Journal article (peer-reviewed)abstract
    • Secondary ion mass spectrometry (SIMS) has been utilized to study compositional gradients in compound-sputtered and annealed Cu2ZnSn(S,Se)(4) (CZTSSe). SIMS image depth profiling shows a non-uniform spatial distribution of selenium and supports a mechanism where selenization is accompanied by grain growth rather than substitution of selenium for sulfur. Furthermore, SIMS depth profiles of S and Se using O-2(+) primary ions and detecting molecular ions of the MCs+ type using Cs+ primary ions have been compared, where a linear relationship between the sulfur and selenium concentration suitable for compositional analysis is observed for concentrations with an Se/(S+Se) ratio in the range from 0.25 to 0.65. 3D image of the spatial Se distribution in a 20 x 20 mu m(2) grid measured with SIMS image depth profiling.
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11.
  • Haarahiltunen, Antti, et al. (author)
  • Gettering of iron in CZ-silicon by polysilicon layer
  • 2011
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley-VCH Verlagsgesellschaft. - 1610-1634 .- 1610-1642. ; 8:3, s. 751-754
  • Journal article (peer-reviewed)
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12.
  • Hofmann, T., et al. (author)
  • Anisotropy of the Γ-point effective mass and mobility in hexagonal InN
  • 2006
  • In: Physica Status Solidi. C, Current topics in solid state physics. - Weinheim, Germany : Wiley-VCH Verlagsgesellschaft. - 1610-1634 .- 1610-1642. ; 3:6, s. 1854-1857
  • Journal article (peer-reviewed)abstract
    • We determine the anisotropic electron effective mass and mobility parameters in wurtzite InN thin films with free electron concentration Nfrom 1.8 × 1017 cm–3 to 9.5 × 1018 cm–3 using Infrared Magneto-optic Generalized Ellipsometry. The room-temperature measurements were carried out with magnetic fields up to 4.5 T. For the Γ-point we estimate m*⊥ = 0.047m0 and m*‖ = 0.039m0 for polarization perpendicular and parallel to the c -axis, respectively. Scattering by impurities or ionized donors may explain the decrease of mobility for polarization parallel to the c -axis from 1600 cm2/(Vs) to 800 cm2/(Vs) with increase in N , where the perpendicular mobility is further decreased, likely caused by additional grain boundary scattering.
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13.
  • Holmberg, Patrik, 1971-, et al. (author)
  • Study of incubation effects during surface ablation using picosecond pulses at a wavelength of 800 nm
  • 2011
  • In: Physica Status Solidi. C, Current topics in solid state physics. - Weinheim : WILEY-VCH Verlag GmbH & Co. - 1610-1634 .- 1610-1642. ; 8:9, s. 2862-2865
  • Journal article (peer-reviewed)abstract
    • A comparison of laser ablation on the front-surface (surface facing the laser) and back-surface of 1.1 mm thick boro-aluminosilicate glass plates has been performed using 1 ps pulses at a wavelength of 800 nm. The resulting structures of front- and back-surface ablation are compared relative to an input design geometry of 40 µm deep and 40 µm wide surface channels. The influence of incubation effects on the final structure is discussed.
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14.
  • Hounsome, L.S., et al. (author)
  • Role of extended defects in brown colouration of diamond
  • 2007
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 4:8, s. 2950-2957
  • Journal article (peer-reviewed)abstract
    • The absorption spectrum of brown diamond is broad and featureless, in both natural type IIa and CVD-grown material. It is argued that such an absorption is due to an extended, rather than a point, defect. Ab-initio modelling studies have been conducted on dislocations and extended vacancy-related defects. While certain dislocations could potentially explain the origin of colour, their density is too low to account for experimentally observed absorption magnitudes. It is demonstrated that a vacancy disk lying in the {111} plane has an absorption spectrum similar to that seen in natural and CVD brown diamond. Such disks are unstable above about 200 vacancies and should relax to dislocation loops in natural diamond. Hydrogen is shown to passivate the optical activity of the disks.
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15.
  • Jalalian, Abolfazl, et al. (author)
  • Fabrication of Ca, Zr doped BaTiO 3 ferroelectric nanofibers by electrospinning
  • 2012
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 9:7, s. 1574-1576
  • Journal article (peer-reviewed)abstract
    • As first time, (Ba0.85Ca0.15)(Ti0.9Zr0.1)O-3 (BCTZ) nanofibers are synthesized by sol-gel assisted electrospining technique. Non-woven and bead-free BCTZ nanofibers mat was formed and a single chemical phase was achieved after calcination of the nanofibers at 700 degrees C in air. XRD and Raman spectroscopy show that BCTZ nanofibers crystallized in the morphotropic phase boundary (MPB) region.
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16.
  • Johansson, Sofia, et al. (author)
  • High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
  • 2012
  • In: Physica Status Solidi. C, Current Topics in Solid State Physics. - : Wiley. - 1610-1634. ; 9:2, s. 350-353
  • Journal article (peer-reviewed)abstract
    • RF and DC characterization of vertical InAs nanowire MOSFET on Si substrates are presented. Nanowire arrays are epitaxially integrated on Si substrates by use of a thin InAs buffer layer. For device fabrication, high-k HfO2 gate dielectric and wrap-gates are used. Post-deposition annealing of the high-k is evaluated by comparing one annealed and one not-annealed sample. The annealed sample show better DC characteristics in terms of transconductance, g(m) = 155 mS/mm, and on-current, I-on = 550 mA/mm. Box plots of on-current, on-resistance and transconductance for all 190-nanowire-array transistors on the annealed sample suggest that the electrical properties of the nanowires are preserved when scaling the nanowire diameter. Finally, high frequency characterisation yields a unity current gain cut-off frequency of f(t) = 9.3 GHz for the annealed sample and f(t) = 2.0 GHz for the not-annealed sample. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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17.
  • Junesand, Carl, et al. (author)
  • Surface morphology of indium phosphide grown on silicon by nano-epitaxial lateral overgrowth
  • 2009
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 6:12, s. 2785-2788
  • Journal article (peer-reviewed)abstract
    • InP is grown on Si by nano-epitaxial lateral overgrowth (NELOG or nano-ELOG) on patterns consisting of net-type openings under different growth conditions. Surface morphology is characterized with AFM and profilometer and optical quality assessed by Micro Photoluminescence measurements (mu-PL). Results show that growth conditions affect both morphology and optical quality, with thicker layers generally corresponding to better surface morphology. Lower growth temperature seems to improve surface morphology irrespective of thickness, and ELOG layers exhibit significantly better morphology than the planar layer.
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18.
  • Karim, Amir, et al. (author)
  • Characterization of InAs/GaSb type€II superlattice photodiodes for mid€wave IR with different mesa sidewall passivation schemes
  • 2012
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; c9:7, s. 1690-2
  • Journal article (peer-reviewed)abstract
    • We report on the electrical material characterization of InAs/GaSb type-II superlattice (T2SL) mid-wave infrared (MWIR) photodiodes with different passivation schemes on the mesa-sidewalls with significant differences in the resulting low temperature dark currents. Devices fabricated by dry etching passivated with polymerized photoresist, show orders of magnitude lower dark currents as compared to unpassivated devices. The mesa side walls were examined using high resolution transmission electron microscopy (HRTEM) with a special focus on the interface between the superlattice material the dielectric passivation. Material analysis on nanometer scale at the mesa sidewall interface was performed using energy dispersive X-ray (EDX) spectrometry. EDX line scans were obtained from interfaces for different passivated unpassivated devices, using the highly focused electron beam in TEM, to investigate the chemical compositions. The unpassivated photoresist-passivated mesas, with different electrical properties, revealed different sidewall morphologies compositions. An oxygen containing layer was observed in photoresist-passivated devices covering the whole mesa sidewall. We think this plays a role in reducing surface leakage dark current. In HR-TEM the mesa sidewall topography reveals preferential etching of one superlattice component as previously observed. Nevertheless, the dielectric material covers the sidewall uniformly.
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19.
  • Kundozerova, T. V., et al. (author)
  • Binary anodic oxides for memristor-type nonvolatile memory
  • 2012
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 9:7, s. 1699-1701
  • Journal article (peer-reviewed)abstract
    • The temperature dependence of the optical properties of InGaAs/GaAs double quantum wells (QWs) grown by molecular beam epitaxy (MBE) on (100) and (311)A GaAs substrates has been studied by photoluminescence (PL). It is found that for an excitation of 50 mW, the PL quenching for (100) and (311)A QWs occurs at 220 K and 300 K, respectively. This suggests that the high index plane (311)A has superior structural properties and less non-radiative defect centers than the conventional (100) plane. The better optical quality of the QWs grown on (311)A is also confirmed by the narrowing of the full width at half-maximum (FWHM) of the PL emission: 10 nm for (311)A and 20 nm for (100). From these findings it is expected that optical devices grown on (311)A GaAs planes should have better performances than those grown on conventional (100) orientation. We have also carried out a systematic study to investigate the effect of post-growth thermal annealing on the optical quality of the QWs. We observed a substantial improvement of the PL efficiency with annealing temperatures in the range 500-700 °C for all samples. However, this PL enhancement is accompanied by a blueshift. These energy shifts can be explained by interdiffusion or intermixing of In and Ga atoms at the interfaces between the QWs and the barriers. A noticeable narrowing of the PL linewidth with higher annealing temperatures could be explained by a homogenisation of the quantum well interfaces.
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20.
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21.
  • Liuolia, Vytautas, et al. (author)
  • Near- and far-field optical characterization of InGaN photonic crystal light emitting diodes
  • 2012
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 9:7, s. 1664-1666
  • Journal article (peer-reviewed)abstract
    • Light extraction from InGaN photonic crystal (PhC) light emitting diodes (LEDs) has been studied by scanning near-field optical microscopy and time-resolved photoluminescence. The observed patterns of the near-field intensity are complex and do not correspond to the physical structure of the photonic crystal. Comparison with conventional LEDs without the PhC showed that PhC not only improves the light extraction, but also makes the LED emission more homogeneous.
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22.
  • Marcinkevicius, Saulius, et al. (author)
  • Carrier dynamics and localization in AlInN/GaN heterostructures
  • 2013
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 10:5, s. 853-856
  • Journal article (peer-reviewed)abstract
    • Photoexcited carrier dynamics and localization potentials in Al0.86In0.14N/GaN heterostructure have been examined by time-resolved photoluminescence (PL), transient photoreflectance and scanning near-field optical spectroscopy. The large GaN and AlInN PL intensity difference, and the short AlInN PL decay and GaN PL rise times indicate efficient photoexcited carrier transfer from AlInN to GaN via sub-band edge states. Near-field PL scans and photoreflectance data show that the diameter of the localization sites and the distance between them are well below 100 nm. Majority of these states is assigned to In clusters, in which the valence band has a higher energy than the valence band in a uniform AlInN alloy. It is likely that the carrier transport through the sub-band edge states proceeds via high conductivity channels involving extended defects.
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23.
  • Metaferia, Wondwosen, et al. (author)
  • Selective area heteroepitaxy through nanoimprint lithography for large area InP on Si
  • 2012
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 9:7, s. 1610-1613
  • Journal article (peer-reviewed)abstract
    • The use of nanoimprint lithography, a low cost and time saving alternative to E-beam lithography, for growing heteroepitaxial indium phosphide layer on silicon is demonstrated. Two types of patterns on 500 nm and 200 nm thick silicon dioxide mask either on InP substrate or InP seed layer on silicon were generated by UV nanoimprint lithography: (i) circular openings of diameter 150 nm and 200 nm and (ii) line openings of width ranging from 200 nm to 500 nm. Selective area growth and epitaxial lateral overgrowth of InP were conducted on these patterns in a low pressure hydride vapour phase epitaxy reactor. The epitaxial layers obtained were characterized by atomic force microscopy, scanning electron microscopy and micro photoluminescence. The growth from the circular openings on InP substrate and InP (seed) on Si substrate is extremely selective with similar growth morphology. The final shape has an octahedral flat top pyramid type geometry. These can be used as templates for growing InP nanostructures on silicon. The grown InP layers from the line openings on InP substrates are ∌ 2.5 ÎŒm thick with root mean square surface roughness as low as 2 nm. Completely coalesced layer of InP over an area of 1.5 mm x 1.5 mm was obtained.The room temperature photoluminescence intensity from InP layers on InP substrate is 55% of that of homoepitaxial InP layer. The decrease in PL intensity with respect to that of the homoepitaxial layer is probably due to defects associated with stacking faults caused by surface roughness of the mask surface. Thus in this study, we have demonstrated that growth of heteroepitaxial InP both homogeneously and selectively on the large area of silicon can be achieved. This opens up the feasibility of growing InP on large area silicon for several photonic applications.
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24.
  • Montesdeoca-Santana, Amada, et al. (author)
  • Phosphorous gettering in acidic textured multicrystalline solar cells
  • 2011
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 8:3, s. 743-746
  • Journal article (peer-reviewed)abstract
    • The influence of phosphorus gettering is studied in thiswork applied to an acidic textured multicrystalline siliconsubstrate. The texturization was achieved with an HF/HNO3 solution leading to nanostructures on the silicon surface. It has been demonstrated in previous works that this textured surface decreases the reflectance on the solar cell and increases the surface area improving the photon collection and enhancing the short circuit current.The present study investigates the effect on the minoritycarrier lifetime of the phosphorous diffusion when it is carried out on this textured surface. The lifetime is measured by means microwave photoconductance decay and quasi steady state phototoconductance devices. The diffused textured wafers are used to fabricate solar cells and their electrical parameters are analyzed.
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25.
  • Nelander, Rikard, et al. (author)
  • Temperature degradation of the gain transition in terahertz quantum cascade lasers - the role of acoustic phonon scattering
  • 2009
  • In: physica status solidi (c). - : Wiley. - 1610-1634 .- 1862-6351 .- 1610-1642. ; 6:2, s. 579-582
  • Conference paper (peer-reviewed)abstract
    • The temperature degradation in terahertz quantum cascade lasers is investigated with the focus on the role acoustic phonon scattering. A self-energy describing the electron-acoustic phonon interaction is derived and used to study the importance in transport and optical properties. We observe a strong degradation of the gain peak with temperature. Despite the very small coupling to electrons, the exclusion of acoustic phonon scattering alters the current and peak gain in the order of 5%. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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26.
  • Nisar, Jawad, 1980-, et al. (author)
  • Study of electronic and optical properties of BiTaO4 for photocatalysis
  • 2012
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley-VCH Verlagsgesellschaft. - 1610-1634 .- 1610-1642. ; 9:7, s. 1593-1596
  • Journal article (peer-reviewed)abstract
    • We present the optical absorption spectrum of BiTaO4 using the photo acoustic spectroscopy (PAS) technique and first principle approach. Band gap have been estimated 2.65 and 2.45 eV using PAS method and DFT calculations, respectively. Position of reduction and oxidation level with respect to vacuum level are identified, which shows that BiTaO4 can be used as photocatalyst for hydrogen production. Electronic structure is explained by plotting total density of states (TDOS).
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27.
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28.
  • Paskova, Tanja, et al. (author)
  • Polar and nonpolar HVPE GaN substrates: impact of doping on the structural, electrical and optical characteristics
  • 2009
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 6:2, s. 344-347
  • Journal article (peer-reviewed)abstract
    • Polar and nonpolar bulk GaN substrates with low defect density and high structural and optical quality are demonstrated. The effect of doping by silicon, oxygen and iron within moderate doping levels on the properties of the polar GaN substrates was found uncompromised, as confirmed by high resolution X-ray diffraction and low temperature photoluminescence spectroscopy. In contrast, the lattice parameters were affected significantly, which has to be considered in the subsequent homoepitaxial device growth. The boule growth and respectively the nonpolar substrate homogeneity were found to be hampered by the doping, due to surface microcracking and higher impurity incorporation, while n-type undoped nonpolar substrates were demonstrated of superior quality.
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29.
  • Pereira, M. F., et al. (author)
  • Microscopic theory for intersubband spontaneous emission
  • 2007
  • In: Physica Status Solidi. C, Current Topics in Solid State Physics. - : Wiley. - 1610-1634. ; 4:2, s. 356-359
  • Journal article (peer-reviewed)abstract
    • The amplified spontaneous emission spectra of quantum-cascade laser structures is computed with a Keldysh Green's functions theory. We show that the emission spectra are sharpened in comparison to gain spectra due to wave guide propagation. In addition the different dependence on level occupation causes moderate differences between gain and emission peak positions. Our fit-parameter-free theory is valid in ranges of strong nonequilibrium, where fit-parameters do not even exist.
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30.
  • Pinos, Andrea, et al. (author)
  • Scanning near-field optical spectroscopy of AlGaN epitaxial layers
  • 2012
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 9:7, s. 1617-1620
  • Journal article (peer-reviewed)abstract
    • Band gap fluctuations and carrier localization in AlxGa1-xN films with x values varying from 0.30 to 0.50 has been studied by scanning near-field optical microscopy (SNOM) by measuring photoluminescence. The measurements have revealed a dual localization potential. Microscopic scale potential variations, detected by the SNOM, were most pronounced in the lower Al content samples. The nanoscopic carrier localization potentials, evaluated from the width of the photoluminescence spectra, were largest in layers with the largest AlN molar fraction. The large scale potential fluctuations were attributed to Ga rich regions close to grain boundaries or atomic layer steps. The density, size and band gap energy of these domains were found to be composition dependent. The nanoscopic potential variations have been assigned to small-scale compositional fluctuations, possibly, occurring due to formation of Al rich grains during growth.
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31.
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32.
  • Santos, P., et al. (author)
  • Electrical activity of multivacancy defects in silicon
  • 2012
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 9:10-11, s. 2000-2004
  • Journal article (peer-reviewed)abstract
    • The formation processes and properties of multivacancy defects in Si have been recently the subject of several re-search studies. Here we report on density functional calculations concerning the stability and electrical activity of the tetravacancy, pentavacancy and hexavacancy complexes in Si. Formation energy calculations indicate that Four-Fold Coordinated (FFC) V4 and V5 are more stable than Part-of-Hexagonal-Ring (PHR) or planar structures by at least 1.2 eV and 0.6 eV, respectively. This relative stability order between configurations remains unchanged for different charged states from double plus to double minus. Calculations of the electrical activity predict deep acceptor levels for the FFC defects. Accordingly, electron traps related to (–/0) and (=/–) levels near Ec – 0.5 eV were found for V4 and V5, whereas levels for V6 were estimated at Ec – 0.35 eV. No donor levels were found for these defects
  •  
33.
  • Savini, G., et al. (author)
  • Structure and energy of partial dislocations in wurtzite-GaN
  • 2007
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 4:8, s. 2945-1949
  • Journal article (peer-reviewed)abstract
    • First-principle calculations have shown that both the partials can be electrically active. In particular we have shown the Ga(g) core partials are a good candidate for the observed absorption peak at 2.4 eV revealed by energy loss spectroscopy measurements. The symmetric and asymmetric reconstructions have relatively close formation energies. Our results have suggested that the asymmetric reconstructions, characterized by strong bonds along the dislocation line are favourable in intrinsic materials. However, in strongly p and n-type materials or in high stress field the symmetric reconstructions can become energetically more stable. These reconstructions are always electrically active with a deep band across the forbidden gap.
  •  
34.
  • Sedrine, N. Ben, et al. (author)
  • Optical properties of InN/In0.73Ga0.27N multiple quantum wells studied by spectroscopic ellipsometry
  • 2011
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 8:5, s. 1629-1632
  • Journal article (peer-reviewed)abstract
    • In this work we study the optical properties of two high quality fifty-periods of In-polarity InN/In0.73Ga0.27N MQWs samples, grown by radio-frequency plasma-assisted molecular beam epitaxy, with different well (0.5-1 nm) and barrier thicknesses (3-4 nm). We employ spectroscopic ellipsometry at room temperature in the energy range from 0.6 to 6 eV, and incidence angles of 60 and 70°. Ellipsometric data were successfully modelled using the model dielectric function approach and a multilayer model assuming the MQWs as a homogeneous layer. The E0, A and E1 MQWs transition energies were determined and found to exhibit a blueshift with decreasing the well thickness.
  •  
35.
  • Shahid, Naeem, et al. (author)
  • Effect of hole shapes on the reliability of deeply-etched InP-based photonic crystal devices
  • 2012
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 9:7, s. 1670-1673
  • Journal article (peer-reviewed)abstract
    • We present systematic evaluation of the optical transmission characteristics of a set of photonic crystal waveguides (PhCWs) fabricated by two schemes. An optimized hole-reshaping process to obtain cylindrical holes was applied in one scheme and a comparison is made with as-etched PhCWs. The spectral characteristics of the transmission mini- stopband (MSB) in identical waveguides show that the reliability, in terms of spectral position and shape, of fabricated PhCWs using the hole reshaping process is significantly improved in comparison to the as-etched waveguides. The obtained MSB characteristics are attractive for coarse WDM filtering and wavelength selective mirrors.
  •  
36.
  • Smirnov, Yury, et al. (author)
  • Inverse problem method for complex permittivity reconstruction of layered media in a rectangular waveguide
  • 2014
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley-VCH Verlagsgesellschaft. - 1610-1634 .- 1610-1642. ; 11:5-6, s. 969-974
  • Journal article (peer-reviewed)abstract
    • We solve the inverse problem of finding frequency-dependent complex permittivity of a multi-sectional dielectric diaphragm in a waveguide of rectangular cross section from the transmission coefficient measured at different frequencies. Based on the developed recursive method we perform a detailed analysis for one-, two- and three sectional diaphragms
  •  
37.
  •  
38.
  • Stehr, Jan Eric, et al. (author)
  • Unintentional nitrogen incorporation in ZnO nanowires detected by electron paramagnetic resonance spectroscopy
  • 2016
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley-VCH Verlagsgesellschaft. - 1610-1634 .- 1610-1642. ; 13:7-9, s. 572-575
  • Journal article (peer-reviewed)abstract
    • Unintentional incorporation of nitrogen in ZnO nanowires (NWs) grown by rapid thermal chemical vapor deposition is unambiguously proven by electron paramagnetic resonance spectroscopy. The nitrogen dopants are suggested to be provided from contaminations in the source gases. The majority of incorporated nitrogen atoms are concluded to reside at oxygen sites, i.e. in the atomic configuration of nitrogen substituting for oxygen (NO). The NO centers are suggested to be located in proximity to the NW surface, based on their reduced optical ionization energy as compared with that in a bulk material. This implies that the defect formation energy at the NW surface could be lower than its bulk value, consistent with previous theoretical predictions. The obtained results underline that nitrogen can be easily incorporated in ZnO nanostructures which may be of advantage for realizing p-type conducting ZnO via N doping. On the other hand, the awareness of this process can help to prevent such unintentional doping in structures with desired n-type conductivity.
  •  
39.
  • Sudhakar, S., et al. (author)
  • Irradiation induced nanotrack and property modification in Zn 3P 2
  • 2012
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 9:7, s. 1636-1639
  • Journal article (peer-reviewed)abstract
    • Zn 3P 2 epilayers were grown on InP (100) substrates by liquid phase epitaxy (LPE) using In solvent. Zinc composition in the epilayers was varied by changing the zinc mole fraction in the growth melt and was confirmed by energy dispersive X-ray analysis (EDAX). Stoichiometric Zn 3P 2 epilayers were subjected to 100 MeV Ni ion irradiation with various ion fluences of 1 × 10 10 to 1 × 10 13 ions/cm 2 at 77 K. From the high resolution X-ray diffraction (HRXRD) of 100 MeV Ni ion irradiated epilayers, the decrease in the peak intensities and increase in the FWHM values were observed. AFM analysis revealed the formation of nanotracks in the irradiated Zn 3P 2 epilayers. Hall measurements showed the decrease in carrier mobility with the increase of ion fluence. The absorption band edge of Zn 3P 2 gradually decreased from 1.49 eV to 1.42 eV upon increasing the ion fluence.
  •  
40.
  • Thiagarajan, Kannan, et al. (author)
  • Electron-Phonon and electron-defect Scattering Rates in Semiconducting Zig-Zag Carbon Nanotubes
  • 2012
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 9:1, s. 22-25
  • Journal article (peer-reviewed)abstract
    • Electron-phonon and electron-defect scattering rates have been calculated within a tight-binding approach for semiconducting zigzag carbon nanotubes. The scattering rates for (5,0), (7,0), (10,0), (13,0) and (25,0) nanotubes have been investigated. The electron-phonon scattering rate shows both diameter and temperature dependence, and the dependence of the electron-defect scattering rate on nanotube diameter is similar to that of the electron-phonon scattering rate. Backscattering and forward scattering for electrons interacting with defects occur with equal probability at all energies. The importance of electron-defect scattering relative to electron-phonon scattering depends very much on the energy of the electron.
  •  
41.
  • Thomazi, Fabiano, et al. (author)
  • Optical absorption of rutile SnO2 and TiO2
  • 2009
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 6:12, s. 2740-2742
  • Journal article (peer-reviewed)abstract
    • The electronic band-edge structure and optical response of rutile SnO2 and TiO2 are studied, employing a fully relativistic projected augmented wave method within the local density approximation (LDA). A quasi-particle model corrects the LDA band-gap energies, which is used to fit the on-site self-interaction correction (SIC) potential LDA+U-SIC. We show that inclusion of this k-dependent SIC-like potential correction, as well as inclusion of polaronic screening are of outermost importance for accurately determining the electronic structure and optical properties. For both SnO2 and TiO2, the calculated absorption coefficient alpha(omega) reveals a very small optical band-edge absorption in the photon energy region E-g <= h omega <= similar to E-g+Delta (Delta = 0.8 eV and 0.5 eV for SnO2 and TiO2, respectively). The main difference between SnO2 and TiO2 is the presence of the unoccupied low-energy 3d conduction-band states in TiO2 which yield flat conduction bands and a very strong optical absorption for h omega > E-g+Delta. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
  •  
42.
  • Tumėnas, Saulius, et al. (author)
  • Dielectric function and refractiveindex of GaBixAs1-x(x = 0.035, 0.052, 0.075)
  • 2012
  • In: Physica Status Solidi. C, Current topics in solid state physics. - Weinheim : Wiley-VCH Verlagsgesellschaft. - 1610-1634 .- 1610-1642. ; 9:7, s. 1633-1635
  • Journal article (peer-reviewed)abstract
    • MBE grown GaBiAs epitaxial layers with Bi content of3.5 %, 5.2 %, and 7.5 %, sandwiched between GaAs,have been investigated by spectroscopic ellipsometry inthe infrared and absorption threshold spectral regions.The real and imaginary parts of the dielectric function ofGaBiAs indicate bandgap Eg and spin-orbit splitting Δ0+values close to literature data. The refractive index ofGaBiAs in the IR region 0.2–0.8 eV exceeds that ofGaAs by ca. 0.8 %, 2.3 %, and 3.6 %, for Bi content3.5 %, 5.2 %, and 7.5 %, respectively.
  •  
43.
  • Valenta, Jan, et al. (author)
  • Polarization of photoluminescence excitation and emission spectra of silicon nanorods within single Si/SiO2 nanowires
  • 2011
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley-VCH Verlagsgesellschaft. - 1610-1634 .- 1610-1642. ; 8:3, s. 1017-1020
  • Journal article (peer-reviewed)abstract
    • Polarization properties of individual silicon nanowires are studied using an optical micro-spectroscopy setup equipped with a Fresnel rhomb to rotate the polarization of the exciting laser and the analyzer to characterize the polarization of emitted photoluminescence. The Si nanowire samples are prepared by electron-beam lithography, plasma etching and oxidation. The fabricated wires are embedded in SiO2 and oriented parallel to the Si substrate. Due to the fluctuating wire diameter (around 5 nm) the very long wires (several tens of μm) are effectively divided into an array of quantum rods (prolate ellipsoids). These structures have strong photoluminescence under UV-blue excitation at room temperature. The degree of photoluminescence linear polarization of both excitation and emission is very high, between 0.9-1, and reveals relatively low fluctuations at different spots of the wires. Experimental results are compared with available theoretical models leading to the conclusion that the high polarization degree is mostly due to surface charges (dielectric confinement) with smaller contribution of quantum confinement effects.
  •  
44.
  • Wacker, Andreas (author)
  • Coherence and spatial resolution of transport in quantum cascade lasers
  • 2008
  • In: Physica Status Solidi. C, Current Topics in Solid State Physics. - : Wiley. - 1610-1634. ; 5:1, s. 215-220
  • Journal article (peer-reviewed)abstract
    • The method of nonequilibrium Greens functions allows for a spatial and energetical resolution of the electron current in Quantum Cascade Lasers. While scattering does not change the spatial position of carriers, the entire spatial evolution of charge can be attributed to coherent transport by complex wave functions. We discuss the hierarchy of transport models and derive the density matrix equations as well as the hopping model starting from the nonequilibrium Greens functions approach.
  •  
45.
  • Willander, Magnus, et al. (author)
  • Different interfaces to crystalline ZnO nanorods and their applications
  • 2009
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : John Wiley and Sons, Ltd. - 1610-1634 .- 1610-1642. ; 6:12, s. 2683-2694
  • Journal article (peer-reviewed)abstract
    • In this paper we will demonstrate the growth of crystalline ZnO nanorods on different substrates including some of crystalline as well as amorphous nature. The application of these ZnO nanorods to optoelectronics and to bioelectronics will be highlighted. We demonstrate the fabrication of n-ZnO nano-rods/p-type substrates and fabricated light emitting diodes (LEDs) based on these structures. Among the presented LEDs, a hybrid configuration based on the integration of p-type polymers on flexible plastic provides a potential for developing large area white LEDs. Moreover, ZnO nanorods based intracellular measurements using bare and functionalized ZnO surfaces were demonstrated to be a valuable non-destructive tool for obtaining intracellular measurements paving the way for a wealth of intracellular information.
  •  
46.
  • Willander, Magnus, 1948-, et al. (author)
  • ZnO nanowires : chemical growth, electro-deposition and application to intracellular nano-sensors
  • 2008
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642 .- 1862-6351. ; 5:9, s. 3076-3083
  • Journal article (peer-reviewed)abstract
    • In this paper we present our results on growth, characterization, and nano-devices based on ZnO nano-structures. The ZnO nano-structures were grown by mainly two methods, the catalytic Vapor Liquid Solid (VLS) and the low temperature chemical growth. We show that by multiple coating combined with low temperature chemical growth, well aligned with size controlled ZnO nanowires on silicon substrates can be achieved. The dissolution, due to its important on the stability of ZnO nano-structures in aqueous medium, is then discussed and some preliminary experimental results are shown. Basic Optical characteristics of ZnO nano-rods are briefly discussed. Finally, electrochemical intracellular nano-sensors based on ZnO nano-wires are demonstrated as efficient nano-sensors for monitoring the human cell activity with minute pH changes. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
  •  
47.
  • Wronskowska, A.A., et al. (author)
  • IR-VIS-UV ellipsometry, XRD and AES investigation of In/Cu and In/Pd thin films
  • 2008
  • In: Physica Status Solidi. C, Current topics in solid state physics. - Weinheim, Germany : Wiley-VCH Verlagsgesellschaft. - 1610-1634 .- 1610-1642. ; 5:5, s. 1141-1144
  • Journal article (peer-reviewed)abstract
    • Optical and compositional properties of In, In/Pd and Pd/In/Pd thin films evaporated on Cu and SiO2 substrates in vacuum were investigated by means of X-ray diffractometry, Auger electron spectroscopy and spectroscopic ellipsometry methods. Auger depth profile studies were performed in order to determine the composition of InCu and InPd structures. In both systems interdiffusion of metals was detected at room temperature. The XRD patterns indicated formation of CuIn2 and PdIn3 phases in the samples. Optical properties of the composite layers containing intermetallic phases were derived from ellipsometric quantities Ψ and Δ measured in the photon energy range 0.1-6.0 eV at different angles of incidence using suitable multilayer models for the examined samples.
  •  
48.
  • Zetterling, Carl-Mikael, et al. (author)
  • Future high temperature applications for SiC integrated circuits
  • 2012
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley-VCH Verlag. - 1610-1634 .- 1610-1642. ; 9:7, s. 1647-1650
  • Journal article (peer-reviewed)abstract
    • The main advantage of SiC is its high critical field for breakdown. This leads to much lower on-resistance for high voltage devices compared to silicon, but at a higher price that has to be offset by system gains. However, it is not straightforward to exploit this advantage, which is clear from the many different device types that are presently being commercialized. There are other advantages of SiC yet to be fully investigated: the possibility of high temperature operating electronics and radiation hard devices. If integrated circuits in SiC are also available, the system advantage is larger. Here temperature ranges higher than that of SOI should be aimed at, and some of these new application areas will be described. An overview of IC research will be ended with a description of our selected technology operated at 300 °C.
  •  
49.
  • Zhao, Hanyue, et al. (author)
  • Density functional theory study of ordered defect Cu-(In,Ga)-Se compounds
  • 2012
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 9:7, s. 1600-1603
  • Journal article (peer-reviewed)abstract
    • CuIn1-xGaxSe2 is used as absorber material in thin-film photovoltaics. Presence of defect arrays of 2V(Cu)(-) + X-Cu(2+) complexes (X = In or Ga) in the material results in the formation of ordered defect phases, like for instance Cu(In1-xGax)(3)Se-5 and Cu(In1-xGax)(5)Se-8. An understanding of these defects phases is of considerably importance since they can strongly affect the performance of the solar cell. Density functional theory calculation with a hybrid functional is carried out to study the electronic structures and optical properties of these ordered defect phases. Fundamental properties, such as the band bowing, the band alignment and the absorption coefficients, are presented, and their dependence on material composition is discussed.
  •  
50.
  • Zhao, Yichen, et al. (author)
  • Size-tuneable synthesis of photoconducting poly-(3-hexylthiophene) nanofibres and nanocomposites
  • 2012
  • In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 9:7, s. 1546-1550
  • Journal article (peer-reviewed)abstract
    • Poly-(3-hexylthiophene) (P3HT) has been applied in many fields such as organic solar cells, printed electronic circuits, due to superior semiconducting properties compared to other semiconducting polymers. The presence of p-p interaction causes regio-regular P3HT to form ordered lamellar stacks during crystallisation. Here we report a simple room temperature, solution based method to synthesise P3HT nanofibres with controllable sizes. Our method is based on differing solubility of P3HT in various solvents. In a mixed solvent environment, we could control the precipitation of P3HT to obtain nanofibres with various diameters by varying the ratios of the solvents. We found that the lengths of the nanofibres could be controlled with concentration of the solution. Other methods to obtain nanofibres of P3HT invariably involves heating and controlled cooling which makes reproducibility and morphology control difficult. Furthermore, we synthesised a nanocomposite consisting of P3HT nanofibres and quasi-type-II quantum dots and evaluated the photoelectric properties of the nanofibres as well as the nanocomposites using interdigitated gold microelectrodes.
  •  
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