| 1. |
- Driussi, F., et al.
(författare)
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Fabrication, characterization and modeling of strained SOI MOSFETs with very large effective mobility
- 2007
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Ingår i: ESSDERC 2007. - 9781424411238 ; , s. 315-318
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Konferensbidrag (refereegranskat)abstract
- Strained Silicon on insulators (sSOI) wafers with a supercritical thickness of 58 nm were produced using thin strain relaxed SiGe buffer layers, wafer bonding, selective etch back and epitaxial overgrowth. Raman spectroscopy revealed an homogeneous strain of 0.63 +/- 0.03% in the strained Si layer. Long channel n-type SOI-MOSFETs showed very large electron mobilities up to 1200 cm(2)/Vs in the strained Si devices. These values are more than two times larger than those of reference SOI n-MOSFETs. Mobility simulations with state of the art scattering models are then used to interpret the experiments.
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| 2. |
- Hållstedt, Julius, et al.
(författare)
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Leakage current reduction in 80 nm biaxially strained Si nMOSFETs on in-situ doped SiGe virtual substrates
- 2007
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Ingår i: ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference 2008. - 9781424411238 ; , s. 319-322
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Konferensbidrag (refereegranskat)abstract
- We present a comprehensive study of biaxially strained (up to similar to 3 GPa stress) Si nMOSFETs down to 80 nm gatelength. Well behaved 80 nm devices with expected strain-induced electrical enhancement were demonstrated. Special emphasis was put on investigation of substrate junction leakage and source to drain leakage. In-situ doped wells and channel profiles demonstrated superior substrate junction leakage for the relaxed SiGe substrates compared to conventional implantation. The source to drain leakage in 80 nm devices was effectively reduced by increment of channel doping and rotation of the channel direction.
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| 3. |
- Raeissi, Bahman, 1979, et al.
(författare)
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High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
- 2007
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Ingår i: ESSDERC 2007. - 9781424411238 ; , s. 283-286
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Konferensbidrag (refereegranskat)abstract
- Electron capture into insulator/silicon interface states is investigated for high-k dielectrics of Gd(2)O(3) prepared by MBE and ALD, and for HfO(2) prepared by reactive sputtering, by measuring the frequency dependence of MOS capacitance. The capture cross sections are found to be thermally activated and to increase steeply with the energy depth of the interface electron states. The methodology adopted is considered useful for increasing the understanding of high-k-oxide/silicon interfaces.
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