| 1. |
- Depauw, Valérie, et al.
(författare)
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Integrating surface nanotextures into thin crystalline-Si solar cells: The case of a 1-μm-thin nanoimprinted heterojunction cell
- 2016
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Ingår i: Photovoltaic Specialists Conference (PVSC), 2016 IEEE 43rd. - : IEEE. - 9781509027248 ; , s. 1-6
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Konferensbidrag (refereegranskat)abstract
- Texturing of crystalline silicon at the light wavelength scale is a promising approach for light management in ever thinner cells. However, this approach requires adapting the device design and process, which has so far revealed to be a challenging task. Indeed, successful integration requires compromising the excellent optical properties for preserving the electrical ones. We briefly summarize what has been learned so far in the community and illustrate some of these learnings with the fabrication and improvement of 1-μm-thin monocrystalline nanotextured silicon solar cells.
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| 2. |
- Edoff, Marika, 1965-, et al.
(författare)
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Back Contact Passivation Effects in Bi-Facial Thin CIGS Solar Cells
- 2016
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Ingår i: 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). - : IEEE. - 9781509027248 ; , s. 3527-3529
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Konferensbidrag (refereegranskat)abstract
- Bi-facial solar cells with ultrathin CIGS solar cells are fabricated to investigate the influence of back contact passivation. Solar cells with CIGS thicknesses of 300 and 500 nm and with an ultrathin transparent Mo layer are characterized using EQE measurements from both the front and the rear side as well as with I-V measurements. Back contact passivation consisting of Al2O3 deposited by atomic layer deposition and nano-sized point contact openings is used. The results are compared to cells with only the transparent Mo layer as back contact. We find a significant effect of the passivation manifested as an increase in the current density of the solar cells with the passivation.
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| 3. |
- Imenes, Anne Gerd, et al.
(författare)
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3D solar maps for the evaluation of building integrated photovoltaics in future city districts : A norwegian case study
- 2016
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Ingår i: 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. - 9781509027248 ; 2016-November, s. 3141-3146
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Konferensbidrag (refereegranskat)abstract
- Three-dimensional (3D) solar maps based on Radiance simulations are presented for a future city district in southern Norway. The surface mapping method provides the commercial developer with a practical tool to evaluate the potential for building integrated photovoltaics (BIPV). The solar maps identify the optimum roof and facade areas available for solar energy utilization. The importance of BIPV and facade utilization in new city developments is discussed, along with key questions raised by the commercial developer regarding the practical implementation of BIPV solutions. Based on feedback from the building industry, a simplified model has been implemented to evaluate surface areas producing a profit or a loss over the PV system lifetime. As tilted photovoltaic (PV) modules installed on flat roofs are not building integrated, three simulation variants have been performed for flat roofs with a small inclination up to ten degrees. For some buildings this will give a small gain in annual PV production and payback time. The resulting 3D solar maps give the developer a possibility to review early-stage plans in terms of building shapes and positions in the landscape, in order to maximize utilization of the available solar resource. This enables cost- and energy-efficient development of nearly zero-energy buildings in future city districts.
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| 4. |
- Leitao, J. P., et al.
(författare)
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Influence of CdS and ZnxSn1-xOy Buffer Layers on the Photoluminescence of Cu(In,Ga)Se2 Thin Films
- 2016
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Ingår i: 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). - New York : IEEE. - 9781509027248 ; , s. 3068-3071
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Konferensbidrag (refereegranskat)abstract
- In this work, an optical study by photoluminescence on the influence of different buffer layers on a Cu(In, Ga)Se2 (CIGS) thin film is presented. Chemical bath deposited CdS was compared with atomic layer deposited ZnxSn1xOy (ZnSnO). The CIGS bulk and CIGS/buffer interface in both samples are strongly influenced by fluctuating potentials, being less pronounced for the sample with the ZnSnO buffer layer. This study emphasizes the potential application of the ZnSnO semiconductor in CIGS based solar cells.
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| 5. |
- Ren, Yi, et al.
(författare)
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Evolution of Na-S(-O) compounds on Cu2ZnSnS4 absorber surface and its effect on CdS growth
- 2016
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Ingår i: 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). - New York : IEEE. - 9781509027248 ; , s. 2255-2257
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Konferensbidrag (refereegranskat)abstract
- Na-containing surface compounds is likely to form during the formation of CZTS absorber. Still, the understanding of any potential influence on buffer layer growth and device performance is limited. In this work, we observed that NaxS compound can possibly form on the CZTS surface after annealing, and negatively affect the growth of the subsequent CdS buffer. The NaxS compound is oxidized to Na2SO4 via air exposing the annealed CZTS surface, which allows greatly improved quality of the CdS layer. This provides new insights for improving the CdS/CZTS interface during the fabrication of CZTS solar cells.
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| 6. |
- Ross, N., et al.
(författare)
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Cu2ZnSn(S,Se)4 Solar Cell Absorbers from Diffusion of Selenium into Annealed Cu2ZnSnS4 Absorbers
- 2016
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Ingår i: 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). - New York : IEEE. - 9781509027248 ; , s. 492-497
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Konferensbidrag (refereegranskat)abstract
- Small grain compound-sputtered Copper Zinc Tin Sulfide (CZTS) precursors and large grain recrystallized CZTS solar cell absorbers are annealed at sub-recrystallization temperatures in selenium atmosphere to promote selenium diffusion into the CZTS films. Grazing incidence x-ray diffraction and Raman spectroscopy show the presence of two distinct sulfide and mixed sulfide/selenide phases, with the selenide-like phase more prominent at the front surface of the absorber. Only a narrow range of sulfur-to-selenium ratios is observed in the sulfide/selenide phase. Secondary ion mass spectrometry profiles show a compositional sulfur-selenium gradient for samples annealed at 450 degrees C. Scanning electron microscopy with energy dispersive X-ray spectroscopy reveals that the compositional gradient is formed by a spatial distribution of sulfide/selenide grains, embedded in the remaining sulfide absorber. Sulfur-selenium gradients within single absorber grains are not observed, indicating that the mixed sulfide/selenide phase nucleates and grows in competition with the existing sulfide phase, rather than forming by replacement of anions within existing crystals. IV and EQE measurements of devices fabricated from the selenized absorbers support this conclusion.
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