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- Zota, Cezar B., et al.
(författare)
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InGaAs tri-gate MOSFETs with record on-current
- 2017
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Ingår i: 2016 IEEE International Electron Devices Meeting, IEDM 2016. - 9781509039012 ; , s. 1-4
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Konferensbidrag (refereegranskat)abstract
- We demonstrate InGaAs tri-gate MOSFETs with an on-current of ION = 650 μA/μm at VDD = 0.5 V and IOFF = 100 nA/μm, enabled by an inverse subthreshold slope of SS = 66 mV/decade and transconductance of gm = 3 mS/μm, a Q-factor of 45. This is the highest reported Ion for both Si-based and III-V MOSFETs. These results continue to push III-V MOSFET experimental performance towards its theoretical limit. We find an improvement in SS from 81 to 75 mV/dec. as the effective oxide thickness (EOT) is scaled down from 1.4 to 1 nm, as well as improvements in SS, gd and DIBL from reducing the nanowire width. We also find that electron mobility remains constant as the width is scaled to 18 nm.
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