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- Kilpi, Olli Pekka, et al.
(författare)
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Sub-100-nm gate-length scaling of vertical InAs/InGaAs nanowire MOSFETs on Si
- 2018
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Ingår i: 2017 IEEE International Electron Devices Meeting, IEDM 2017. - 9781538635599 ; Part F134366, s. 1-17
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Konferensbidrag (refereegranskat)abstract
- We demonstrate a process to vary the gate-length of vertical MOSFETs on the same sample with high accuracy and high performance. Fabricated vertical InAs/InGaAs MOSFETs on Si have gate length ranging from 25 nm to 140 nm. The results shown are from single nanowire transistors as well as arrays with nanowires ranging from 80 to 500 nanowires. The devices show good yield and clear scaling trends. We demonstrate a device with gm = 2.4 mS/μm and a device with Ion = 407 μA/μm at Ioff = 100 nA/μm and VDD = 0.5 V, which both are record values for vertical MOSFETs. This is the first demonstration of vertical MOSFETs having gatelengths comparable to the state-of-the-art lateral III-V MOSFETs.
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| 2. |
- Prinz, Christelle N.
(författare)
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Interactions of nanowires with cells and tissue
- 2018
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Ingår i: 2017 IEEE International Electron Devices Meeting, IEDM 2017. - 9781538635599 ; Part F134366, s. 1-26
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Konferensbidrag (refereegranskat)abstract
- III-V nanowires have tunable dimensions, between 40 nm and 100 nm in diameter and between 1 and 15 μm in length. Due to their small diameter, they are ideal candidates to interact with cells without detrimental effects on the cell viability. Nanowires can be used as sensors: in our case, we have shown that arrays of vertical gallium phosphide nanowires are promising materials for biosensing in membranes, neural implant development as well as for cellular mechanosensing. Moreover, due to the exceptional control one can achieve during synthesis over their geometrical and optical properties, III-V nanowires are ideal materials to investigate the interactions of high aspect ratio nanoparticles with living cells and tissue.
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