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1.
  • Kozhuharov, Rumen, 1949, et al. (författare)
  • 24 GHz InGaP-GaAs HBT push-push VCO with broadband tuning range
  • 2009
  • Ingår i: Proceedings of the 4th European Microwave Integrated Circuits Conference. - 9782874870125 ; , s. 242-245
  • Konferensbidrag (refereegranskat)abstract
    • A push-push topology MMIC microstrip VCO with output taken from tank common-node has been designed and implemented in an InGaP/GaAs HBT process. It provides an output at second harmonic at 24 GHz and differential output for PLL at 12 GHz. The oscillator shows an excellent phase noise performances of -93 dBc/Hz at the fundamental frequency and -89 dBc/Hz at the second harmonic output at 100 kHz offset from the carrier. Different doping profile varactors are investigated and VCO tuning range larger than 35% is obtained.
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2.
  • Nilsson, Joakim, et al. (författare)
  • S-band discrete and MMIC GaN power amplifiers
  • 2009
  • Ingår i: European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 39th European Microwave Conference, EuMC 2009. - 9782874870125 ; , s. 495-498
  • Konferensbidrag (refereegranskat)abstract
    • The use of GaN devices for microwave power amplifiers begins to be a reality in Europe. This paper describes two S-band (2.7-3.3 GHz) high power amplifier (HPA) designs; one discrete 100 W output stage and one 10 W MMIC power amplifier. The discrete power amplifier is designed using two GaN power bars with a total gate width of 19.2 mm. The GaN power bars have been developed by Selex-SI, within the european co-project Korrigan. The MMIC power amplifier was designed using a 0.25 ?m GaN HEMT process supplied and processed by Chalmers.
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