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- Gomeniuk, Y. Y., et al.
(författare)
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Electrical properties of high-k LaLuO3 gate oxide for SOI MOSFETs
- 2011
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Ingår i: 6th International Workshop on Semiconductor-on-Insulator Materials and Devices. - 9783037851784 ; , s. 87-93
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Konferensbidrag (refereegranskat)abstract
- The paper presents the results of electrical characterization of MOS capacitors and SOI MOSFETs with novel high-? LaLuO3 dielectric as a gate oxide. The energy distribution of interface state density at LaLuO 3/Si interface is presented and typical maxima of 1.2×10 11 eV-1cm-2 was found at about 0.25 eV from the silicon valence band. The output and transfer characteristics of the n- and p-MOSFET (channel length and width were 1 μm and 50 μm, respectively) are presented. The front channel mobility appeared to be 126 cm2V -1s-1 and 70 cm2V-1s-1 for n- and p-MOSFET, respectively. The front channel threshold voltages as well as the density of states at the back interface are presented.
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