| 1. |
- Sliz, E., et al.
(författare)
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Evidence of a causal effect of genetic tendency to gain muscle mass on uterine leiomyomata
- 2023
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Ingår i: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723. ; 14:1
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Tidskriftsartikel (refereegranskat)abstract
- Uterine leiomyomata (UL) are the most common tumours of the female genital tract and the primary cause of surgical removal of the uterus. Genetic factors contribute to UL susceptibility. To add understanding to the heritable genetic risk factors, we conduct a genome-wide association study (GWAS) of UL in up to 426,558 European women from FinnGen and a previous UL meta-GWAS. In addition to the 50 known UL loci, we identify 22 loci that have not been associated with UL in prior studies. UL-associated loci harbour genes enriched for development, growth, and cellular senescence. Of particular interest are the smooth muscle cell differentiation and proliferation-regulating genes functioning on the myocardin-cyclin dependent kinase inhibitor 1A pathway. Our results further suggest that genetic predisposition to increased fat-free mass may be causally related to higher UL risk, underscoring the involvement of altered muscle tissue biology in UL pathophysiology. Overall, our findings add to the understanding of the genetic pathways underlying UL, which may aid in developing novel therapeutics.
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| 2. |
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| 3. |
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| 4. |
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| 5. |
- Osterman, J, et al.
(författare)
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Techniques for depth profiling of dopants in 4H-SiC
- 2001
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Ingår i: SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000. ; , s. 559-562
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Konferensbidrag (refereegranskat)abstract
- Three different methods for measuring the depth distribution of dopants in 4H-SiC have been investigated: (I) Spreading Resistance profiling (SRP), (2) Scanning Capacitance Microscopy (SCM) and (3) Scanning Electron Microscopy (SEM). The investigated samples included p- and n-type epitaxial layers grown by vapor phase deposition with doping concentrations of 10(16)-10(20) cm(-3). Also p(+)n implanted profiles using a combination of Al and B multi-energy implantations were studied. All techniques were able to provide doping profiles qualitatively corresponding to secondary ion mass spectrometry (SIMS) data. The SRP results suggest a lower limit of the p-doping concentration below which the ohmic contact between the probe tip and sample becomes more Schottky-like. The magnitude of the SCM signal corresponds well to the chemical doping profile except in the depleted region surrounding the metallurgical junction of the p(+)n structure.
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| 6. |
- Aberg, D, et al.
(författare)
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Implantation temperature dependent deep level defects in 4H-SiC
- 2001
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Ingår i: Materials Science Forum, Vols. 353-356. ; , s. 443-446
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Konferensbidrag (refereegranskat)abstract
- Deep level transient spectroscopy spectra of the near Z-defect region (150-350K) were investigated for B implanted samples of low doses (10(8)-10(9) cm(-2)). For 300 degreesC implantation, a level at an energy of 0.41 eV below the conduction hand edge was found, referred to as the S-level. The S-center was shown to form in both implanted and electron irradiated 4H-SiC, either after room temperature (R.T.) implantation followed by mild heat treatments or lung R.T. storage (several months) or after 200-300 degreesC implantations/irradiations. The S-center was found to anneal out at temperatures above 250 degreesC.
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| 7. |
- Aberg, D., et al.
(författare)
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Nitrogen deactivation by implantation-induced defects in 4H-SiC epitaxial layers
- 2001
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 78:19, s. 2908-2910
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Tidskriftsartikel (refereegranskat)abstract
- Ion implantation causes free charge carrier reduction due to damage in the crystalline structure. Here, nitrogen-doped 4H silicon carbide (n type) epitaxial layers have been investigated using low ion doses in order to resolve the initial stage of the charge carrier reduction. It was found that the reduction of free carriers per ion-induced vacancy increases with increasing nitrogen content. Nitrogen is suggested to be deactivated through reaction with migrating point defects, and silicon vacancies or alternatively interstitials are proposed as the most likely candidates.
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| 8. |
- Aberg, D., et al.
(författare)
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Nitrogen passivation by implantation-induced point defects in 4H-SiC epitaxial layers
- 2001
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Ingår i: Applied Surface Science. - 0169-4332 .- 1873-5584. ; 184:04-jan, s. 263-267
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Tidskriftsartikel (refereegranskat)abstract
- Ion implantation causes damage to the crystal lattice resulting in the loss of free charge carriers. In this study, low dose implantations using different ions and implantation doses are made to resolve the initial carrier loss in nitrogen-doped epitaxial layers. A strong dependence of compensation on nitrogen concentration is seen, showing that nitrogen is passivated by implantation-induced point defects. An activation energy of 3.2 eV for the dissociation of the passivated nitrogen center is obtained.
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| 9. |
- Aberg, D, et al.
(författare)
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Ultra-shallow thermal donor formation in oxygen-containing ambient
- 1998
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Ingår i: Physica status solidi. B, Basic research. - 0370-1972 .- 1521-3951. ; 210, s. 527-532
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Tidskriftsartikel (refereegranskat)abstract
- Czochralski-grown phosphorus-doped (approximate to 2 x 10(14) cm(-3)) silicon wafers have been annealed in nitrogen, wet nitrogen, argon, oxygen, and vacuum ambients at 470 degrees C for times up to 500 h. Sample characterization was made with capacitance-voltage, four-point probe, DLTS, thermally stimulated capacitance, admittance spectroscopy, secondary ion-mass spectrometry, and Fourier transform infrared spectroscopy. This study finds a strong relation between the previously reported ultra-shallow thermal donors (USTDs) and shallow thermal donors (STDs), and it is shown that the net concentration of thermally formed donors is independent on annealing ambient within the experimental accuracy. It was found that the majority of formed donors for long anneals consisted of either STDs or USTDs, however, it was found that oxygen-containing ambient is indispensable for forming USTDs.
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| 10. |
- Aberg, D, et al.
(författare)
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Ultrashallow thermal donor formation in silicon by annealing in ambient oxygen
- 1999
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Ingår i: Journal of Applied Physics. - 0021-8979 .- 1089-7550. ; 85, s. 8054-8059
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Tidskriftsartikel (refereegranskat)abstract
- Czochralski-grown silicon wafers doped with phosphorus (similar to 10(14) cm(-3)) have been annealed in nitrogen, wet nitrogen, oxygen, argon, and vacuum ambients at 470 degrees C for times up to 500 h. Sample characterization was made using predominantly electrical techniques such as admittance spectroscopy and thermally stimulated capacitance measurements but also secondary ion mass spectrometry (SIMS) and Fourier transform infrared spectroscopy were employed. In all samples, an increasing concentration of free carrier electrons is observed with increasing annealing time, reaching a maximum of similar to 10(16) cm(-3) at 100 h. For durations in excess of 100 h gradual decrease of the free electron concentration takes place except for the samples treated in wet nitrogen and oxygen atmospheres, which display donors stable even after 200 h. These stable centers are found to have shallower donor level positions in the energy band gap (similar to 25 meV below the conduction band edge E-c) than those of the centers formed in vacuum, argon, and nitrogen atmospheres (similar to 35 meV below E-c). The latter centers are associated with the well-established shallow thermal donors (STDs) while the origin of the former ones, which are labeled ultrashallow thermal donors (USTDs) is less known. However, on the basis of a wealth of experimental results we show that the USTDs are most likely perturbated STDs modified through interaction with fast-in diffusing oxygen species, possibly oxygen dimers. Further, comparison between the electrical data and the SIMS measurements reveals unambiguously that neither the STD nor the USTD centers involve nitrogen, in contrast to recent suggestions in the literature. (C) 1999 American Institute of Physics. [S0021-8979(99)06512-3].
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| 11. |
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| 13. |
- Aberg, KA, et al.
(författare)
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MBD-seq as a cost-effective approach for methylome-wide association studies: demonstration in 1500 case--control samples
- 2012
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Ingår i: Epigenomics. - : Future Medicine Ltd. - 1750-192X .- 1750-1911. ; 4:6, s. 605-621
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Tidskriftsartikel (refereegranskat)abstract
- Aim: We studied the use of methyl-CpG binding domain (MBD) protein-enriched genome sequencing (MBD-seq) as a cost-effective screening tool for methylome-wide association studies (MWAS). Materials & methods: Because MBD-seq has not yet been applied on a large scale, we first developed and tested a pipeline for data processing using 1500 schizophrenia cases and controls plus 75 technical replicates with an average of 68 million reads per sample. This involved the use of technical replicates to optimize quality control for multi- and duplicate-reads, an in silico experiment to identify CpGs in loci with alignment problems, CpG coverage calculations based on multiparametric estimates of the fragment size distribution, a two-stage adaptive algorithm to combine data from correlated adjacent CpG sites, principal component analyses to control for confounders and new software tailored to handle the large data set. Results: We replicated MWAS findings in independent samples using a different technology that provided single base resolution. In an MWAS of age-related methylation changes, one of our top findings was a previously reported robust association involving GRIA2. Our results also suggested that owing to the many confounding effects, a considerable challenge in MWAS is to identify those effects that are informative about disease processes. Conclusion: This study showed the potential of MBD-seq as a cost-effective tool in large-scale disease studies.
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| 14. |
- Aberg, V., et al.
(författare)
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Synthesis and absolute configuration of methyl(-)-(3R)-8-(4-bromophenyl)-7-(naphthalen-1-yl-methyl)-5-oxo-2,3-dihydro-5H-thiazolo 3,2-a pyridine-3-carboxylate
- 2002
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Ingår i: Acta Crystallographica Section E. - : International Union of Crystallography (IUCr). - 1600-5368. ; 58, s. o812-o814
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Tidskriftsartikel (refereegranskat)abstract
- The title molecule, C26H20BrNO3S, contains a ring-fused 2-pyridinone framework substituted with a 4-bromo-phenyl-, a naphthalen-1-ylmethyl and a methoxycarbonyl substituent. The main goal of this work was to confirm the stereochemistry for the methoxycarbonyl substituent, which proved to be 3R. Moreover, the 4-bromophenyl substituent was shown to be rotated out of the plane of the 2-pyridinone ring, with a torsion angle of 61.2 (5)degrees. To allow the best packing arrangement, the naphthalen-1-ylmethyl substituent is positioned to mediate an intermolecular pi-pi interaction.
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| 15. |
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| 16. |
- Espinet-Gonzalez, Pilar, et al.
(författare)
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Nanowire Solar Cells : A New Radiation Hard PV Technology for Space Applications
- 2020
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Ingår i: IEEE Journal of Photovoltaics. - 2156-3381. ; 10:2, s. 502-507
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Tidskriftsartikel (refereegranskat)abstract
- Radiation hard thin-film solar cell technologies are necessary in order to achieve a step forward in the specific power of solar arrays for space applications. In this article, we analyze the degradation of nanowire (NW) solar cells under high energy particles. GaAs NW solar cells have been irradiated with protons of 100 and 350 keV at different fluences. The radiation hardness of the NW solar cells in all the cases is remarkable in comparison with GaAs planar solar cells and prior literature. Design guidelines to optimize the specific power of NW solar cells for space applications by jointly increasing their efficiency and radiation hardness are presented.
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| 17. |
- Hallén, Anders., et al.
(författare)
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Ion implantation of silicon carbide
- 2002
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Ingår i: Nuclear Instruments and Methods in Physics Research Section B. - 0168-583X .- 1872-9584. ; 186, s. 186-194
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Tidskriftsartikel (refereegranskat)abstract
- Ion implantation is an important technique for a successful implementation of commercial SiC devices. Much effort has also been devoted to optimising implantation and annealing parameters to improve the electrical device characteristics. However, there is a severe lack of understanding of the fundamental implantation process and the generation and annealing kinetics of point defects and defect complexes. Only very few of the most elementary intrinsic point defects have been unambiguously identified so far. To reach a deeper understanding of the basic mechanisms SiC samples have been implanted with a broad range of ions, energies, doses, etc., and the resulting defects and damage produced in the lattice have been studied with a multitude of characterisation techniques. In this contribution we will review some of the results generated recently and also try to indicate where more research is needed. In particular, deep level transient spectroscopy (DLTS) has been used to investigate point defects at very low doses and transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS) are used for studying the damage build-up at high doses.
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| 18. |
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| 19. |
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| 20. |
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| 21. |
- Schmidt, DC, et al.
(författare)
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The evolution of interstitial-type defects in silicon during platinum diffusion from 400 to 600 degrees C following 2-MeV electron irradiation
- 1999
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Ingår i: Materials Science & Engineering. - 0921-5107 .- 1873-4944. ; 68:2, s. 67-71
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Tidskriftsartikel (refereegranskat)abstract
- Platinum has been diffused into epitaxial n-type silicon for 30 min at temperatures from 400 to 600 degrees C following room temperature irradiation with 2-MeV electrons at a dose of 1 x 10(17) e(-) cm(-2). Platinum has only been detected by deep level transient spectroscopy (DLTS) following the highest diffusion temperature. For lower temperatures defects, not previously reported. arise which are thought to be of interstitial nature. The two principal defect levels are determined to be located at 0.29 and 0.41 eV below the conduction band. The compensation for the two lowest diffusion temperatures is observed to be extremely strong as manifested by a strong reduction of the steady state reverse bias capacitance during the DLTS measurements. Following thermal treatment at 500 degrees C this capacitance, however, increases. DLTS measurements down to 20 K detected thermal donors as well as a number of other defects not previously reported. Their signatures have been determined by DLTS and TSCap (thermally stimulated capacitance) measurements. The nature of the observed defects is discussed with reference to recent results concerning interstitial defects. (C) 1999 Elsevier Science S.A. All rights reserved.
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| 22. |
- Stachura, A, et al.
(författare)
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Transfusion of intra-operative autologous whole blood: influence on complement activation and interleukin formation.
- 2011
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Ingår i: Vox sanguinis. - : Wiley. - 1423-0410 .- 0042-9007. ; 100:2, s. 239-46
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Tidskriftsartikel (refereegranskat)abstract
- Transfusion of autologous whole blood is one available method to reduce the need for allogenic blood transfusion. The objective of this study was to investigate the safety of transfusion of intra-operative autologous whole blood by monitoring plasma concentration of laboratory variables and adverse events after transfusion with the Sangvia(®) system.
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| 23. |
- Storasta, Liutauras, et al.
(författare)
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Proton irradiation induced defects in 4H-SiC
- 2001
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Ingår i: Materials Science Forum, Vols. 353-356. ; , s. 431-434
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Konferensbidrag (refereegranskat)abstract
- Defects created by proton irradiation of n-type 4H-SiC epilayers with different fluences and six annealing steps were investigated by Deep Level Transient Spectroscopy (DLTS) and Minority Carrier Transient Spectroscopy (MCTS). Three previously unreported hole traps with energy levels of E-V + 0.35 eV, E-V + 0.44 eV, E-V + 0.80 eV and several electron traps were found. Annealing properties and dependence upon irradiation dose of majority and minority carrier traps is presented. High temperature stability of a E-V + 0.35 eV trap has been demonstrated.
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| 24. |
- Svensson, BG, et al.
(författare)
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Doping of silicon carbide by ion implantation
- 2001
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Ingår i: Materials Science Forum, Vols. 353-356. - : Trans Tech Publications Inc.. - 9780878498734 - 0878498737 ; , s. 549-554, s. 549-554
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Konferensbidrag (refereegranskat)abstract
- A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10(9) and 10(15) cm(-2) and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation (less than or equal to 10(10) cm(-2)) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 degreesC. However, at higher doses (10(14)-10(15) Al/cm(2)) the rate of defect recombination (annihilation) increases substantially during hot implants (greater than or equal to 200 degreesC) and in these samples one type of structural defect dominates after past-implant annealing at 1700-2000 degreesC. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ion-implanted boron in 4H-samples is discussed.
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| 25. |
- Walser, M., et al.
(författare)
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Local overexpression of GH and GH/IGF1 effects in the adult mouse hippocampus
- 2012
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Ingår i: Journal of Endocrinology. - : Bioscientifica. - 0022-0795 .- 1479-6805. ; 215:2, s. 257-268
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Tidskriftsartikel (refereegranskat)abstract
- GH therapy improves hippocampal functions mainly via circulating IGF1. However, the roles of local GH and IGF1 expression are not well understood. We investigated whether transgenic (TG) overexpression in the adult brain of bovine GH (bGH) under the control of the glial fibrillary acidic protein (GFAP) promoter affected cellular proliferation and the expression of transcripts known to be induced by systemic GH in the hippocampus. Cellular proliferation was examined by 5-bromo-2'-deoxyuridine immunohistochemistry. Quantitative PCR and western blots were performed. Although robustly expressed, bGH-Tg did not increase either cell proliferation or survival. However, bGH-Tg modestly increased Igf1 and Gfap mRNAs, whereas other GH-associated transcripts were unaffected, i.e. the GH receptor (Ghr), IGF1 receptor (Igf1r), 2',3'-cyclic nucleotide 3'-phosphodiesterase (Cnp), ionotropic glutamate receptor 2a (Nr2a (Grin2a)), opioid receptor delta (Dor), synapse-associated protein 90/postsynaptic density-95-associated protein (Sapap2 (Dlgap2)), haemoglobin beta (Hbb) and glutamine synthetase (Gs (Glul)). However, IGF1R was correlated with the expression of Dor, Nr2a, Sapap2, Gs and Gfap. In summary, although local bGH expression was robust, it activated local IGF1 very modestly, which is probably the reason for the low response of previous GH-associated response parameters. This would, in turn, indicate that hippocampal GH is less important than endocrine GH. However, as most transcripts were correlated with the expression of IGF1R, there is still a possibility for endogenous circulating or local GH to act via IGF1R signalling. Possible reasons for the relative bio-inactivity of bGH include the bell-shaped dose-response curve and cell-specific expression of bGH. Journal of Endocrinology (2012) 215, 257-268
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| 26. |
- Ward, D., et al.
(författare)
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Fission dynamics with microscopic level densities
- 2017
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Ingår i: Acta Physica Polonica B, Proceedings Supplement. - 1899-2358. ; 10:1, s. 201-209
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Tidskriftsartikel (refereegranskat)abstract
- We present a consistent framework for treating the energy and angularmomentum dependence of the shape evolution in the nuclear fission. It combines microscopically calculated level densities with the Metropolis-walk method, has no new parameters, and can elucidate the energy-dependent influence of pairing and shell effects on the dynamics of warm nuclei.
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