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Sökning: WFRF:(Alami M)

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1.
  • Aad, G., et al. (författare)
  • 2013
  • Ingår i: The European Physical Journal C. - : Springer Science and Business Media LLC. - 1434-6052. ; 73:3
  • Tidskriftsartikel (refereegranskat)
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2.
  • Ruiz-Ramos, Miguel, et al. (författare)
  • Adaptation response surfaces for managing wheat under perturbed climate and CO2 in a Mediterranean environment
  • 2018
  • Ingår i: Agricultural Systems. - : Elsevier BV. - 0308-521X. ; 159, s. 260-274
  • Tidskriftsartikel (refereegranskat)abstract
    • Adaptation of crops to climate change has to be addressed locally due to the variability of soil, climate and the specific socio-economic settings influencing farm management decisions. Adaptation of rainfed cropping systems in the Mediterranean is especially challenging due to the projected decline in precipitation in the coming decades, which will increase the risk of droughts. Methods that can help explore uncertainties in climate projections and crop modelling, such as impact response surfaces (IRSs) and ensemble modelling, can then be valuable for identifying effective adaptations. Here, an ensemble of 17 crop models was used to simulate a total of 54 adaptation options for rainfed winter wheat (Triticum aestivum) at Lleida (NE Spain). To support the ensemble building, an ex post quality check of model simulations based on several criteria was performed. Those criteria were based on the "According to Our Current Knowledge" (AOCK) concept, which has been formalized here. Adaptations were based on changes in cultivars and management regarding phenology, vernalization, sowing date and irrigation. The effects of adaptation options under changed precipitation (P), temperature (T), [CO2] and soil type were analysed by constructing response surfaces, which we termed, in accordance with their specific purpose, adaptation response surfaces (ARSs). These were created to assess the effect of adaptations through a range of plausible P, T and [CO2] perturbations. The results indicated that impacts of altered climate were predominantly negative. No single adaptation was capable of overcoming the detrimental effect of the complex interactions imposed by the P, T and [CO2] perturbations except for supplementary irrigation (sI), which reduced the potential impacts under most of the perturbations. Yet, a combination of adaptations for dealing with climate change demonstrated that effective adaptation is possible at Lleida. Combinations based on a cultivar without vernalization requirements showed good and wide adaptation potential. Few combined adaptation options performed well under rainfed conditions. However, a single sI was sufficient to develop a high adaptation potential, including options mainly based on spring wheat, current cycle duration and early sowing date. Depending on local environment (e.g. soil type), many of these adaptations can maintain current yield levels under moderate changes in T and P, and some also under strong changes. We conclude that ARSs can offer a useful tool for supporting planning of field level adaptation under conditions of high uncertainty.
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4.
  • Rodríguez, A., et al. (författare)
  • Implications of crop model ensemble size and composition for estimates of adaptation effects and agreement of recommendations
  • 2019
  • Ingår i: Agricultural and Forest Meteorology. - : Elsevier BV. - 0168-1923 .- 1873-2240. ; 264, s. 351-362
  • Tidskriftsartikel (refereegranskat)abstract
    • Climate change is expected to severely affect cropping systems and food production in many parts of the world unless local adaptation can ameliorate these impacts. Ensembles of crop simulation models can be useful tools for assessing if proposed adaptation options are capable of achieving target yields, whilst also quantifying the share of uncertainty in the simulated crop impact resulting from the crop models themselves. Although some studies have analysed the influence of ensemble size on model outcomes, the effect of ensemble composition has not yet been properly appraised. Moreover, results and derived recommendations typically rely on averaged ensemble simulation results without accounting sufficiently for the spread of model outcomes. Therefore, we developed an Ensemble Outcome Agreement (EOA) index, which analyses the effect of changes in composition and size of a multi-model ensemble (MME) to evaluate the level of agreement between MME outcomes with respect to a given hypothesis (e.g. that adaptation measures result in positive crop responses). We analysed the recommendations of a previous study performed with an ensemble of 17 crop models and testing 54 adaptation options for rainfed winter wheat (Triticum aestivum L.) at Lleida (NE Spain) under perturbed conditions of temperature, precipitation and atmospheric CO2 concentration. Our results confirmed that most adaptations recommended in the previous study have a positive effect. However, we also showed that some options did not remain recommendable in specific conditions if different ensembles were considered. Using EOA, we were able to identify the adaptation options for which there is high confidence in their effectiveness at enhancing yields, even under severe climate perturbations. These include substituting spring wheat for winter wheat combined with earlier sowing dates and standard or longer duration cultivars, or introducing supplementary irrigation, the latter increasing EOA values in all cases. There is low confidence in recovering yields to baseline levels, although this target could be attained for some adaptation options under moderate climate perturbations. Recommendations derived from such robust results may provide crucial information for stakeholders seeking to implement adaptation measures.
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5.
  • Sarakinos, Kostas, et al. (författare)
  • The effect of the backscattered energetic atoms on the stress generation and the surface morphology of reactively sputtered vanadium nitride films
  • 2008
  • Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 516:14, s. 4568-4573
  • Tidskriftsartikel (refereegranskat)abstract
    • During the reactive magnetron sputtering of transition metal nitrides in an Ar-N-2 ambient, Ar+ and N-2(+) plasma ions are neutralized upon impingement on the target and are backscattered towards the growing film as neutral Ar and N species, respectively. Based on simulations, as well as on plasma and on film characterization techniques we manifest the relationship between the bombardment by the backscattered energetic atoms and the properties of reactively sputtered vanadium nitride (VN) films. Depending on the N-2 flow (q(N2)) two bombardment regimes are established. In the first regime, (q(N2) less than 20 seem) the contribution of the N species to the energetic bombardment is insignificant. The major bombarding species in this regime are the backscattered Ar species, as well as positive plasma ions and sputtered atoms. These species have relatively low energies and subplantation ratios and thus, their energy is transferred to the surface of the growing film. In the second regime (q(N2) greater than 20 scent) the backscattered N atoms are the major bombarding species and their flux to the growing film increases with increasing the N-2 flow. We argue that the backscattered N atoms have higher energy and subplantation ratio in comparison to the other bombarding species. As a result, a higher part of their energy is dissipated in the bulk of the film. The two bombarding regimes correlate well with the residual compressive stresses and the surface roughness of the films. Films grown at q(N2)less than20 seem exhibit low compressive stresses and their roughness drops when q(N2) is increased. This consistent with the low subplantation ratio and the transfer of the energy of the bombarding species to surface the growing film. The compressive stresses of films grown at q(N2) greater than 20 seem are higher, than those of the films grown in the first regime, and increase with increasing N-2 flow. This is attributed to the subplantation of the bombarding N species in the growing film.
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6.
  • Sarakinos, Kostas, et al. (författare)
  • The role of backscattered energetic atoms in film growth in reactive magnetron sputtering of chromium nitride
  • 2007
  • Ingår i: Journal of Physics D. - : Institute of Physics. - 0022-3727 .- 1361-6463. ; 40:3, s. 778-785
  • Tidskriftsartikel (refereegranskat)abstract
    • In this work the impact of backscattered energetic atoms on film growth in reactive sputtering of CrNx (x less than= 1) is manifested. We use film and plasma characterization techniques, as well as simulations in order to study the dynamics of the target-discharge-film interactions. The results show that the primary bombarding species of the growing film are N-2(+) plasma ions, which are neutralized and backscattered by the target in the form of atomic N. It is shown that the backscattered N atoms have energies which are significantly higher than those of other bombarding species, i.e. the backscattered Ar atoms, the sputtered atoms and the plasma ions. Moreover, it is found that CrN films exhibit compressive stresses of 2.6 GPa and a density close to the bulk value. We attribute these properties to the bombardment by backscattered energetic atoms, in particular N. Pure Cr films are also studied for reference.
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7.
  • Alami, J., et al. (författare)
  • On the deposition rate in a high power pulsed magnetron sputtering discharge
  • 2006
  • Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 89:15, s. 154104-
  • Tidskriftsartikel (refereegranskat)abstract
    • The effect of the high pulse current and the duty cycle on the deposition rate in high power pulsed magnetron sputtering (HPPMS) is investigated. Using a Cr target and the same average target current, deposition rates are compared to dc magnetron sputtering (dcMS) rates. It is found that for a peak target current density I-Tpd of up to 570 mA cm(-2), HPPMS and dcMS deposition rates are equal. For I-Tpd greater than 570 mA cm(-2), optical emission spectroscopy shows a pronounced increase of the Cr+/Cr-0 signal ratio. In addition, a loss of deposition rate, which is attributed to self-sputtering, is observed.
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8.
  • Alami, J., et al. (författare)
  • On the phase formation of titanium oxide films grown by reactive high power pulsed magnetron sputtering
  • 2009
  • Ingår i: Journal of Physics D. - : Institute of Physics. - 0022-3727 .- 1361-6463. ; 42:11, s. 115204-
  • Tidskriftsartikel (refereegranskat)abstract
    • High power pulsed magnetron sputtering is used for the growth of titanium dioxide (TiO(2)) films at different working pressures and orientations of the substrate with respect to the target surface. In the case of substrates oriented parallel to the target surface, the increase in the working pressure from 0.5 to 3 Pa results in the growth of crystalline TiO(2) films with phase compositions ranging from rutile to anatase/rutile mixtures. When depositions are performed on substrates placed perpendicularly to the target surface, rutile films that consist of TiO(2) nanocrystals embedded in an amorphous matrix are obtained at 0.5 Pa. Increase in the working pressure leads to the deposition of amorphous films. These findings are discussed in the light of the energetic bombardment provided to the growing film at the various deposition conditions.
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9.
  • Alami, J., et al. (författare)
  • On the relationship between the peak target current and the morphology of chromium nitride thin films deposited by reactive high power pulsed magnetron sputtering
  • 2009
  • Ingår i: Journal of Physics D. - : Institute of Physics. - 0022-3727 .- 1361-6463. ; 42:1, s. 015304-
  • Tidskriftsartikel (refereegranskat)abstract
    • High power pulsed magnetron sputtering (HPPMS) is used to deposit CrN films without external heating at different peak target currents, while the average current is kept constant. Films are also grown by dc magnetron sputtering (dcMS), for reference. The plasma properties, the deposition rate and the morphology of the films are investigated. The plasma analysis reveals that HPPMS provides higher fluxes of ionized species (both gas and sputtered) to the growing film, as compared with dcMS. In addition, the ionic bombardment during HPPMS increases, when the peak target current is increased. The HPPMS films exhibit changes of the density and the surface roughness as the peak target current increased, while the deposition rate decreases drastically. Furthermore, it is found that different thin-film morphologies are obtained starting from a porous columnar morphology for the dcMS films, which turns to a dense columnar one at low peak target currents and ends up to a featureless morphology at high peak target currents for the films grown by HPPMS. A new structure zone model specific for high ionization sputtering is, therefore, outlined.
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10.
  • Alami, Jones, et al. (författare)
  • Phase tailoring of Ta thin films by highly ionized pulsed magnetron sputtering
  • 2007
  • Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 515:7-8, s. 3434-3438
  • Tidskriftsartikel (refereegranskat)abstract
    • Ta thin films were grown on Si substrates at different inclination angles with respect to the sputter source using high power impulse magnetron sputtering (HIPIMS), an ionized physical vapor deposition technique. The ionization allowed for better control of the energy and directionality of the sputtered species, and consequently for improved properties of the deposited films. Depositions were made on Si substrates with the native oxide intact. The structure of the as deposited films was investigated using X-ray diffraction, while a four-point probe setup was used to measure the resistivity. A substrate bias process-window for growth of bcc-Ta was observed. However, the process-window position changed with changing inclination angles of the substrate. The formation of this low-resistivity bcc-phase could be understood in light of the high ion flux from the HIPIMS discharge.
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12.
  • Huesgen, Pitter F., et al. (författare)
  • Proteomic Amino-Termini Profiling Reveals Targeting Information for Protein Import into Complex Plastids
  • 2013
  • Ingår i: PLOS ONE. - : Public Library of Science (PLoS). - 1932-6203. ; 8:9, s. e74483-
  • Tidskriftsartikel (refereegranskat)abstract
    • In organisms with complex plastids acquired by secondary endosymbiosis from a photosynthetic eukaryote, the majority of plastid proteins are nuclear-encoded, translated on cytoplasmic ribosomes, and guided across four membranes by a bipartite targeting sequence. In-depth understanding of this vital import process has been impeded by a lack of information about the transit peptide part of this sequence, which mediates transport across the inner three membranes. We determined the mature N-termini of hundreds of proteins from the model diatom Thalassiosira pseudonana, revealing extensive N-terminal modification by acetylation and proteolytic processing in both cytosol and plastid. We identified 63 mature N-termini of nucleus-encoded plastid proteins, deduced their complete transit peptide sequences, determined a consensus motif for their cleavage by the stromal processing peptidase, and found evidence for subsequent processing by a plastid methionine aminopeptidase. The cleavage motif differs from that of higher plants, but is shared with other eukaryotes with complex plastids.
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13.
  • Jin, P., et al. (författare)
  • Low temperature deposition of a-Al2O3 thin films by sputtering using a Cr2O3 template
  • 2002
  • Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 20:6, s. 2134-2136
  • Tidskriftsartikel (refereegranskat)abstract
    • A description about low temperature deposition of a-Al2O3 thin films by sputtering was presented. Cr2O3 thin layer was used as a template. Nanoindentation was used to study the mechanical properties of the deposited films. Calculations were made to obtain the hardness and Young's modulus of the films.
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14.
  • Megat, Salim, et al. (författare)
  • Integrative genetic analysis illuminates ALS heritability and identifies risk genes
  • 2023
  • Ingår i: Nature Communications. - : Nature Publishing Group. - 2041-1723. ; 14:1
  • Tidskriftsartikel (refereegranskat)abstract
    • Amyotrophic lateral sclerosis (ALS) has substantial heritability, in part shared with fronto-temporal dementia (FTD). We show that ALS heritability is enriched in splicing variants and in binding sites of 6 RNA-binding proteins including TDP-43 and FUS. A transcriptome wide association study (TWAS) identified 6 loci associated with ALS, including in NUP50 encoding for the nucleopore basket protein NUP50. Independently, rare variants in NUP50 were associated with ALS risk (P = 3.71.10−03; odds ratio = 3.29; 95%CI, 1.37 to 7.87) in a cohort of 9,390 ALS/FTD patients and 4,594 controls. Cells from one patient carrying a NUP50 frameshift mutation displayed a decreased level of NUP50. Loss of NUP50 leads to death of cultured neurons, and motor defects in Drosophila and zebrafish. Thus, our study identifies alterations in splicing in neurons as critical in ALS and provides genetic evidence linking nuclear pore defects to ALS.
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15.
  • Ni, Wei-Xin, et al. (författare)
  • X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (=100 nm) using a low temperature growth step
  • 2001
  • Ingår i: Journal of Crystal Growth. - 0022-0248 .- 1873-5002. ; 227-228, s. 756-760
  • Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
    • Relaxation of thin SiGe layers (~90 nm) grown by molecular beam epitaxy using a low temperature growth step (120-200°C) has been investigated using two-dimensional reciprocal space mapping of X-ray diffraction. The samples studied have been divided in two groups, depending on the substrate cooling process during the growth of the low temperature layer. It has been found that a higher degree of relaxation was easily achieved for the sample group without growth interruption. A process window for full relaxation of the Si0.74Ge0.26 layer has been observed in the range of 140-150°C. © 2001 Elsevier Science B.V.
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16.
  • Olsson, Martina, 1996, et al. (författare)
  • Multiscale X-ray imaging and characterisation of pharmaceutical dosage forms
  • 2023
  • Ingår i: International Journal of Pharmaceutics. - 0378-5173 .- 1873-3476. ; 642
  • Tidskriftsartikel (refereegranskat)abstract
    • A correlative, multiscale imaging methodology for visualising and quantifying the morphology of solid dosage forms by combining ptychographic X-ray computed nanotomography (PXCT) and scanning small- and wide-angle X-ray scattering (S/WAXS) is presented. The methodology presents a workflow for multiscale analysis, where structures are characterised from the nanometre to millimetre regime. Here, the method is demonstrated by characterising a hot-melt extruded, partly crystalline, solid dispersion of carbamazepine in ethyl cellulose. Characterisation of the morphology and solid-state phase of the drug in solid dosage forms is central as this affects the performance of the final formulation. The 3D morphology was visualised at a resolution of 80 nm over an extended volume through PXCT, revealing an oriented structure of crystalline drug domains aligned in the direction of extrusion. Scanning S/WAXS showed that the nanostructure is similar over the cross section of the extruded filament, with minor radial changes in domain sizes and degree of orientation. The polymorphic forms of carbamazepine were qualified with WAXS, showing a heterogeneous distribution of the metastable forms I and II. This demonstrates the methodology for multiscale structural characterization and imaging to enable a better understanding of the relationships between morphology, performance, and processing conditions of solid dosage forms.
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17.
  • Sarakinos, Kostas, et al. (författare)
  • A semi-quantitative model for the deposition rate in non-reactive high power pulsed magnetron sputtering
  • 2008
  • Ingår i: Journal of Physics D. - : Institute of Physics. - 0022-3727 .- 1361-6463. ; 41:21, s. 215301-
  • Tidskriftsartikel (refereegranskat)abstract
    • A theoretical treatment of the deposition process in a non-reactive high power pulsed magnetron sputtering discharge is presented. This leads to the development of a semi-quantitative model that describes the deposition rate as a function of process parameters, such as the target voltage, the peak target current density, the pulse frequency and the pulse duty cycle. The effect of these parameters on the deposition rate is studied experimentally using carbon, chromium and copper targets. The implementation of the model on the experimental results enables the estimation of the relative fractions of the sputtering gas ions (Ar(+)) and the sputtered metal ions (M(+)) in the total ion flux at the target. The M(+) content in the target ion current is calculated to adopt values up to similar to 72% and similar to 98% for the chromium and the copper targets, respectively. In contrast, the target ion current is found to consist mostly of Ar(+) species in the case of the carbon target. The significantly higher fractions of M(+) ions for chromium and copper are attributed to their higher ionization probability and their higher sputtering yield in comparison with carbon.
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18.
  • Sarakinos, Kostas, et al. (författare)
  • Growth of tio(x) films magnetron sputtering by high power pulsed from a compound tio(1.8) target
  • 2007
  • Ingår i: REVIEWS ON ADVANCED MATERIALS SCIENCE. - : INST PROBLEMS MECHANICAL ENGINEERING-RUSSIAN ACAD SCIENCES. - 1606-5131. ; 15:1, s. 44-48
  • Tidskriftsartikel (refereegranskat)abstract
    • High power pulsed magnetron sputtering (HPPMS) has been employed for the growth of TiO(x) (x greater than 1.8) films from a ceramic TiO(1.8) target in an Ar-O(2) ambient. The film properties have been compared to those deposited by dc magnetron sputtering (dcMS). Both HPPMS and dcMS films exhibit an amorphous structure and are transparent. Furthermore, films grown by HPPMS have improved properties, such as higher density, higher refractive index and smoother film surface, as compared to those deposited by dcMS.
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19.
  • Sarakinos, Kostas, et al. (författare)
  • Process characteristics and film properties upon growth of TiOx films by high power pulsed magnetron sputtering
  • 2007
  • Ingår i: Journal of Physics D. - : Institute of Physics. - 0022-3727 .- 1361-6463. ; 40:7, s. 2108-2114
  • Tidskriftsartikel (refereegranskat)abstract
    • In this work TiOx (x greater than 1.8) films are grown reactively from a ceramic TiO1.8 target employing high power pulsed magnetron sputtering (HPPMS) at a constant average target current. The effect of the pulse on/off time configuration on the target and the discharge characteristics as well as on the film properties is investigated. The target voltage (V-T) increases from 480 to 650V and the peak target current (I-Tp) increases from 2 to 40A when the pulse off-time is increased from 200 to 2450 mu s, while the on-time is kept constant at 50 mu s. This is accompanied by an increase in the number of Ti atoms sputtered from the target, as manifested by time-resolved optical emission spectroscopy (OES) measurements. OES also manifests an increase in the ionization of the sputtered Ti atoms with increasing I-Tp. The above changes in the target and discharge characteristics affect the deposition rate so that the latter increases with increasing I-Tp up to a value of 14 A, above which the deposition rate drops. In all the cases the deposition rates are up to similar to 40% higher compared to the rates achieved for films grown by dc magnetron sputtering (dcMS) which are also studied for reference. The increase in I-Tp from 2 to 40A also affects the films properties. It is shown that a drop in the surface roughness from 1.1 to 0.5 nm takes place. These values are lower than the surface roughness of films grown by dcMS (1.35 nm). Moreover, films grown by HPPMS are found to have higher densities (up to 3.83 g cm(-3)) and higher refractive indices (up to 2.48) in comparison to the films grown by dcMS (3.71 g cm(-3) and 2.38, respectively).
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20.
  • Sarakinos, Kostas, et al. (författare)
  • Process stabilization and enhancement of deposition rate during reactive high power pulsed magnetron sputtering of zirconium oxide
  • 2008
  • Ingår i: Surface & Coatings Technology. - : Elsevier. - 0257-8972 .- 1879-3347. ; 202:20, s. 5033-5035
  • Tidskriftsartikel (refereegranskat)abstract
    • Reactive high power pulsed magnetron sputtering (HPPMS) of zirconium oxide exhibits a stable and hysteresis-free transition zone, as opposed to reactive direct current magnetron sputtering (dcMS). The stabilization of the transition zone in HPPMS facilitates the growth of transparent zirconium oxide films at lower target coverage, in comparison to dcMS. The lower target coverage, in turn, allows for film deposition rates up to 2 times higher than those achieved by dcMS. The mechanisms which lead to the process stabilization in reactive HPPMS are discussed.
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21.
  • Sarakinos, Kostas, et al. (författare)
  • The effect of the microstructure and the surface topography on the electrical properties of thin Ag films deposited by high power pulsed magnetron sputtering
  • 2008
  • Ingår i: Surface & Coatings Technology. - : Elsevier. - 0257-8972 .- 1879-3347. ; 202:11, s. 2323-2327
  • Tidskriftsartikel (refereegranskat)abstract
    • In this work thin silver (Ag) films are grown employing high power pulsed magnetron sputtering (HPPMS) for various pulse on/off time configurations, as well as by dc magnetron sputtering (dcMS), for reference. It is shown that the increase of the pulse off-time from 450 mu s to 3450 mu s, while the pulse on-time is kept constant at 50 mu s, results in an increase of the peak target current (I-Tp) from 3 A to 22 A. The increase of I-Tp is accompanied by an increase of the ion flux towards the growing film. This is particularly pronounced for I-Tp greater than 11 A. The microstructure, the surface topography and the electrical properties of Ag films grown at I-Tp = 11 A, I-Tp = 22 A and by dcMS are investigated, as a function of the film thickness d. It is shown that for d greater than 20 nin the electrical resistivity of films sputtered at I-Tp=22 A is similar to that of films grown by dcMS. Slightly higher values are measured for films grown at I-Tp = 11A. It is found that in this thickness range the film conductivity is strongly affected by the vertical grain size and the scattering of the charged carriers at the film interfaces. For d less than 15 nm the resistivity of films deposited at I-Tp = 22 A is substantially lower as compared to that of films grown by dcMS. Films deposited at I-Tp = 11 A exhibit also in this case a higher conductivity. In this thickness regime the electronic transport and, thus the conductivity are profoundly determined by the surface topography and the film density.
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