| 1. |
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| 2. |
- Bravo, L, et al.
(författare)
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- 2021
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swepub:Mat__t
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| 3. |
- Tabiri, S, et al.
(författare)
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- 2021
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swepub:Mat__t
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| 4. |
- Glasbey, JC, et al.
(författare)
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- 2021
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swepub:Mat__t
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| 5. |
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| 6. |
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| 7. |
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| 8. |
- Bruzzi, M, et al.
(författare)
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Radiation-hard semiconductor detectors for SuperLHC
- 2005
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Ingår i: Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment. - : Elsevier BV. - 0167-5087 .- 0168-9002. ; 541:1-2, s. 189-201
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Tidskriftsartikel (refereegranskat)abstract
- An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 1035 cm-2 s-1 has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 1016cm-2. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Float Zone silicon), the improvement of present detector designs and the understanding of the microscopic defects causing the degradation of the irradiated detectors. The latest advancements within the RD50 collaboration on radiation hard semiconductor detectors will be reviewed and discussed in this work.
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| 9. |
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| 10. |
- Wijns, W, et al.
(författare)
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Myocardial revascularization
- 2011
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Ingår i: REVISTA PORTUGUESA DE CARDIOLOGIA. - : Elsevier BV. - 0870-2551 .- 2174-2049. ; 30:12, s. 951-1005
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)
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| 11. |
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| 12. |
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| 13. |
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| 14. |
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| 15. |
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| 16. |
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| 17. |
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| 18. |
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| 19. |
- Clark, SC, et al.
(författare)
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EACTS guidelines for the use of patient safety checklists
- 2012
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Ingår i: European journal of cardio-thoracic surgery : official journal of the European Association for Cardio-thoracic Surgery. - : Oxford University Press (OUP). - 1873-734X. ; 41:5, s. 993-1004
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Tidskriftsartikel (refereegranskat)
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| 20. |
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| 21. |
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| 22. |
- Dunning, J, et al.
(författare)
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Guideline for the surgical treatment of atrial fibrillation
- 2013
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Ingår i: European journal of cardio-thoracic surgery : official journal of the European Association for Cardio-thoracic Surgery. - : Oxford University Press (OUP). - 1873-734X. ; 44:5, s. 777-791
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Tidskriftsartikel (refereegranskat)
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| 23. |
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| 24. |
- Monakhov, E. V., et al.
(författare)
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Laplace transform transient spectroscopy study of a divacancy-related double acceptor centre in Si
- 2003
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Ingår i: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 15:39, s. S2771-S2777
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Tidskriftsartikel (refereegranskat)abstract
- Radiation-induced divacancy-related levels in high-purity oxygen-enriched n-type silicon have been studied with the use of deep level transient spectroscopy (DLTS) and Laplace-DLTS. It has been shown that heat treatment at 250degreesC results in a shift of the divacancy (V-2)-related peaks observed by 'standard' DLTS. Using Laplace-DLTS it is demonstrated that the shift is due to annealing of V-2 and formation of a new acceptor centre. The new centre has presumably two negative charge states: singly and doubly negative. The formation of the new centre holds a close one-to-one correlation with the annealing of V-2, indicating that the new centre is a result of divacancy interaction with an impurity or a defect. The close position of the electronic levels of the new centre to that of V-2 suggests a similar electronic and microscopic structure of the new centre to V-2, and a tentative identification is a divacancy-oxygen centre.
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| 25. |
- Paturzo, M., et al.
(författare)
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Investigation of electric internal field in congruent LiNbO3 by electro-optic effect
- 2004
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Ingår i: Applied physics letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 85, s. 5652-5654
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Tidskriftsartikel (refereegranskat)abstract
- We investigate the effect of the defect-induced internal field on the electro-optic behavior of z-cut congruent lithium niobate crystals. We measure, by a spatially resolved interferometric technique, the phase retardation due to an external applied voltage occurring in two regions with opposite ferroelectric polarization. When measurements are performed just after electrical poling, the two opposite domains show a different electro-optic behavior. We interpret this as due to an elastic component of the internal field. In fact, the asymmetric behavior disappears when the sample is thermally annealed, i.e., when the internal field vanishes
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| 26. |
- Paturzo, M., et al.
(författare)
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On the origin of internal field in lithium niobate crystals directly observed by digital holography
- 2005
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Ingår i: Optics express. - 1094-4087. ; 13:14, s. 5416-
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Tidskriftsartikel (refereegranskat)abstract
- We show the defect dependence of the internal field in Lithium Niobate using a full-field interferometric method and demonstrate that it can be directly measured on some clusters of defects embedded in a stoichiometric matrix. Results show that the value of the internal field grows in proximity of defects and vanishes far from them, which addresses the long-standing issue about its origin in Lithium Niobate crystal.
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| 27. |
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| 28. |
- Svensson, B. G., et al.
(författare)
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Defects and diffusion in high purity silicon for detector applications
- 2004
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Ingår i: Conference on Photo-Responsive Materials, Proceedings. - : Wiley-VCH Verlagsgesellschaft. - 3527405526 ; , s. 2250-2257
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Konferensbidrag (refereegranskat)abstract
- In this contribution we review some recent results on defects occurring after irradiation and thermal treatment of silicon detectors for ionizing radiation. In particular, the annealing of the prominent divacancy centre and the concurrent growth of a new double acceptor centre, assigned to the divacancy-oxygen pair, is treated in detail. The detectors were fabricated using oxygenated high purity float zone (FZ) silicon wafers of n-type in order to improve the radiation hardness. The results obtained have important implication on our current understanding of the degradation of silicon detectors at high radiation fluences and suggest that a new concept for optimised impurity/defect engineering needs to be developed.
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| 29. |
- Svensson, B.G., et al.
(författare)
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Ion implantation processing and related effects in SiC
- 2006
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Ingår i: Silicon Carbide and Related Materials 2005, Pts 1 and 2. - 9780878494255 ; , s. 781-786
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Konferensbidrag (refereegranskat)abstract
- A brief survey is given of some recent progress regarding ion implantation processing and related effects in 4H- and 6H-SiC. Four topics are discussed; an empirical ion range distribution simulator, dynamic defect annealing during implantation, formation of highly p(+)-doped layers, and deactivation of N donors by ion-induced defects.
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| 30. |
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