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  • Dammann, M., et al. (författare)
  • Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
  • 2009
  • Ingår i: Microelectronics and Reliability. - : Elsevier BV. - 0026-2714. ; 49:5, s. 474-477
  • Tidskriftsartikel (refereegranskat)abstract
    • Excellent reliability performance of AlGaN/GaN HEMTs on SiC substrates for next generation mobile communication systems has been demonstrated using DC and RF stress tests on 8 x 60 mu m wide and 0.5 mu m long AlGaN/GaN HEMTs at a drain voltage of V-d = 50 V. Drain current recovery measurements after stress indicate that the degradation is partly caused by slow traps generated in the SiN passivation or in the HEMT epitaxial layers. The traps in the SiN passivation layer were characterized using high and low frequency capacitance-voltage (CV) measurements of MIS test structures on thick lightly doped GaN layers. (C) 2009 Elsevier Ltd. All rights reserved.
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3.
  • Leuther, A., et al. (författare)
  • Metamorphic HEMT technology for low-noise applications
  • 2009
  • Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. - 9781424434336 ; , s. 188-191
  • Konferensbidrag (refereegranskat)abstract
    • Different noise sources in HEMTs are discussed, and state-of-the-art low-noise amplifiers based on the Fraunhofer IAF 100 nm and 50 nm gate length metamorphic HEMT (mHEMT) process are presented. These mHEMT technology feature an extrinsic f T of 220 / 375 GHz and an extrinsic transconduction g m , max , of 1300 / 1800 mS/mm. By using the 50 nm technology several low-noise amplifier MMICs were realized. A small signal gain of 21 dB and a noise figure of 1.9 dB was measured in the frequency range between 80 and 100 GHz at ambient temperature. To investigate the low temperature behaviour of the 100 nm technology, single 4 * 40 μm mHEMTs were integrated in hybrid 4 - 8 GHz (Chalmers) and 16 - 26 GHz (Yebes) amplifiers. At cryogenic temperatures noise temperatures of 3 K at 5 GHz and 12 K at 22 GHz were achieved.
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