| 1. |
- Abbasi, Morteza, 1982, et al.
(författare)
-
A Broadband 60-to-120 GHz single-chip MMIC multiplier chain
- 2009
-
Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; , s. 441-444
-
Konferensbidrag (refereegranskat)abstract
- This paper presents a single-chip 60 GHz to 120 GHz frequency multiplier chain based on 0.1 ?m GaAs mHEMT. The MMIC can deliver 3 to 5 dBm of output power from 110 GHz to 130 GHz with 2 dBm input power and consumes only 65 mW of DC power. The signal at the fundamental frequency is suppressed more than 20 dB over the band of interest. The impedance matching networks are realized using coupled transmission lines.
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| 2. |
- Abbasi, Morteza, 1982, et al.
(författare)
-
Single-Chip 220-GHz Active Heterodyne Receiver and Transmitter MMICs With On-Chip Integrated Antenna
- 2011
-
Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 59:2, s. 466-478
-
Tidskriftsartikel (refereegranskat)abstract
- This paper presents the design and characterization of single-chip 220-GHz heterodyne receiver (RX) and transmitter (TX) monolithic microwave integrated circuits (MMICs) with integrated antennas fabricated in 0.1-mu m GaAs metamorphic high electron-mobility transistor technology. The MMIC receiver consists of a modified square-slot antenna, a three-stage low-noise amplifier, and a sub-harmonically pumped resistive mixer with on-chip local oscillator frequency multiplication chain. The transmitter chip is the dual of the receiver chip by inverting the direction of the RF amplifier. The chips are mounted on 5-mm silicon lenses in order to interface the antenna to the free space and are packaged into two separate modules. The double-sideband noise figure (NF) and conversion gain of the receiver module are measured with the Y-factor method. The total noise temperature of 1310 +/- 100K(corresponding to an NF of 7.4 dB), including the losses in the lens and antenna, is measured at 220 GHz with a respective conversion gain of 3.5 dB. The radiated continuous-wave power from the transmitter module is measured to be up to -6 dBm from 212 to 226 GHz. The transmitter and receiver are linked in a quasi-optical setup and the IF to IF response is measured to be flat up to 10 GHz. This is verified to be usable for transmission of a 12.5-Gb/s data stream between the transmit and receive modules over a 0.5-m wireless link. The modules operate with a 1.3-V supply and each consume 110-mW dc power. The presented 220-GHz integrated circuits and modules can be used in a variety of applications, including passive and active imaging, as well as high-speed data communications. To the best of our knowledge, these MMICs are the highest frequency single-chip low-noise heterodyne receiver and transmitter pair reported to date.
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| 3. |
- Abbasi, Morteza, 1982, et al.
(författare)
-
Single-Chip Frequency Multiplier Chains for Millimeter-Wave Signal Generation
- 2009
-
Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 57:12, s. 3134-3142
-
Tidskriftsartikel (refereegranskat)abstract
- Two single-chip frequency multiplier chains targeting 118 and 183 GHz output frequencies are presented. The chips are fabricated in a 0.1 mu m GaAs metamorphic high electron-mobility transistor process. The D-band frequency doubler chain covers 110 to 130 GHz with peak output power of 5 dBm. The chip requires 2 dBm input power and consumes only 65 mW of dc power. The signal at the fundamental frequency is suppressed more than 25 dB compared to the desired output signal over the band of interest. The G-band frequency sextupler (x6) chain covers 155 to 195 GHz with 0 dBm peak output power and requires 6.5 dBm input power and 92.5 mW dc power. The input signal to the multiplier chain can be reduced to 4 dBm while the output power drops only by 0.5 dB. The unwanted harmonics are suppressed more than 30 dB compared to the desired signal. An additional 183 GHz power amplifier is presented to be used after the x6 frequency multiplier chain if higher output power is required. The amplifier delivers 5 dBm output power with a small-signal gain of 9 dB from 155 to 195 GHz. The impedance matching networks are realized using coupled transmission lines which is shown to be a scalable and straightforward structure to use in amplifier design. Microstrip transmission lines are used in all the designs.
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| 4. |
- Andersson, Christer, 1982, et al.
(författare)
-
A packaged 86 W GaN transmitter with SiC varactor-based dynamic load modulation
- 2013
-
Ingår i: 43rd European Microwave Conference, EuMC 2013 - Held as Part of the 16th European Microwave Week, EuMW 2013, Nuremberg, Germany, 7-10 October 2013. - 9782874870316 ; , s. 283-286
-
Konferensbidrag (refereegranskat)abstract
- Output power scaling based on class-J dynamic load modulation (DLM) theory is used to design an unprecedentedly high power microwave transmitter with varactor-based DLM functionality. Matching networks are realized on high dielectric constant substrates in order to reduce the form factor. The fully matched DLM PA incorporates a 24-mm GaN HEMT powerbar and a stack of four SiC varactors, all fit into a CuW package (40 mm × 20 mm). Peak output power is reconfigurable by changing the drain voltage, while retaining the DLMeffect. Under pulsed conditions at 40 V the PA delivers a peak power of 86 W at 2.14 GHz. Efficiency enhancement by DLM is 10-15 percentage-units at 6 dB output power back-off (OPBO). Employing digital predistortion (DPD) with a vector switched generalized memory polynomial (VS-GMP) the ACLR is -46 dBc at an average output power of 17 W and a drain efficiency of 34%. These results prove the potential for high output power levels in varactor-based DLM transmitters.
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| 5. |
- Andersson, Christer, 1982, et al.
(författare)
-
Theory and Design of Class-J Power Amplifiers With Dynamic Load Modulation
- 2012
-
Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 60:12, s. 3778-3786
-
Tidskriftsartikel (refereegranskat)abstract
- A theory for class-J microwave amplifier operation as a function of drive level and fundamental load impedance is derived. Calculations show that, under appropriate operating conditions, it is sufficient to modulate the transistor load reactance to enable high-efficiency operation (>70%) over a large output power dynamic range (>10 dB) with high transistor power utilization. Such dynamic load modulation (DLM) networks are an ideal application of continuously tunable varactor technologies. Multiharmonic load–pull measurements are performed on a GaN HEMT and experimentally verify the theory of operation. A demonstrator amplifier using an SiC varactor technology is then designed and characterized by static measurements. The amplifier has a peak power of 38 dBm at 2.08 GHz and maintains efficiencies above 45% over 8 dB of power dynamic range. An analysis of the load network losses is performed to show the potential of the class-J DLM transmitter concept.
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| 6. |
- Angelov, Iltcho, 1943, et al.
(författare)
-
A balanced millimeter wave doubler based on pseudomorphic HEMTs
- 1992
-
Ingår i: 1992 IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; 1, s. 353-356
-
Konferensbidrag (refereegranskat)abstract
- A balanced HEMT (high electron mobility transistor) doubler for operation at millimeter waves has been analyzed, fabricated, and characterized. Particular attention has been paid to the influence of the output circuit on the performance of the doubler. The doubler was analyzed with a harmonic balance method and an output power of 4 dBm at 42 GHz was obtained experimentally. The conversion gain is approximately -1 dB at 40 GHz at an input power of 5 dBm. Bias and frequency response were very close to the predicted ones.
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| 7. |
- Angelov, Iltcho, 1943, et al.
(författare)
-
A new empirical nonlinear model for HEMT-devices
- 1992
-
Ingår i: 1992 IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 0780306112 ; 3, s. 1583-1586
-
Konferensbidrag (refereegranskat)abstract
- A novel signal model for HEMTs (high-electron-mobility transistors) capable of modeling the current-voltage characteristic and its derivatives, including the characteristic transconductance peak and gate-source and gate-drain capacitances, is described. Model parameter extraction is straightforward and is performed for a submicron gate-length ∂-doped pseudomorphic HEMT. The model has been used to predict the DC- and S-parameters of the devices and different nonlinear circuits such as mixers and multipliers with very high accuracy.
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| 8. |
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| 9. |
- Angelov, Iltcho, 1943, et al.
(författare)
-
CMOS LARGE SIGNAL and RF Noise MODEL FOR CAD
- 2006
-
Ingår i: EUMC2006 Manchester. ; 1:1
-
Konferensbidrag (refereegranskat)abstract
- A compact large-signal model(LS) for high frequency CMOS transistors is proposed and experimentally evaluated with DC, S-parameter, Power Spectrum measurements and load pool measurements. Very good correspondences between measurements on 90 nm CMOS FETs and simulations were achieved. Due to the low number of model parameters and the careful selection of model equations, the model exhibits excellent convergence behavior, a property important for successful nonlinear circuit simulation of RF circuits.The LS model was extended to model the RF Noise and implemented in commercial CAD tool and shows a good correspondence between the measurements and the model
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| 10. |
- Angelov, Iltcho, 1943, et al.
(författare)
-
CMOS large signal model for CAD
- 2003
-
Ingår i: 2003 IEEE MTT-S International Microwave Symposium Digest. ; 2, s. 643-646
-
Konferensbidrag (refereegranskat)
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| 11. |
- Angelov, Iltcho, 1943
(författare)
-
Empirical Device Models -Invited
- 2006
-
Ingår i: EUMC2006 EUMC Workshop RF Device Modelling. ; 2006:1, s. 1-
-
Konferensbidrag (refereegranskat)abstract
- Fundamentals of Empirical transistor models are discussed.An examples are given with FET and HBT LS models.
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| 12. |
- Angelov, Iltcho, 1943, et al.
(författare)
-
Experiment design for quick statistical FET large signal model extraction
- 2013
-
Ingår i: 81st ARFTG Microwave Measurement Conference: Metrology for High Speed Circuits and Systems, ARFTG 2013. - 9781467349826
-
Konferensbidrag (refereegranskat)abstract
- Process variations influence the accuracy of designs and yield in production. This paper addresses the implementation of these variations in large signal FET models, with particular attention on the organization of measurements as to speed up the direct extraction of the model parameters. © 2013 IEEE.
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| 13. |
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| 14. |
- Angelov, Iltcho, 1943, et al.
(författare)
-
F-band resistive mixer based on heterostructure field effect transistor technology
- 1993
-
Ingår i: Proceedings of the 1993 IEEE MTT-S International Symposium on Circuits and Systems. - 0149-645X. - 0780312090 ; 2, s. 787-790
-
Konferensbidrag (refereegranskat)abstract
- A fundamentally pumped millimeter wave resistive mixer based on an HFET technology working at F-band (90-140 GHz) is described for the first time. Nonlinear simulations have been performed for this mixer based on an specially designed double δ-doped pseudomorphic HFET device developed for this application. A minimum conversion loss between 12 to 13 dB was measured with the RF fixed at different frequencies between 108 to 114 GHz at an RF power of -13 dBm. Both theoretical and experimental results are presented in this paper.
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| 15. |
- Angelov, Iltcho, 1943, et al.
(författare)
-
Hybrid measurement-based extraction of consistent large-signal models for microwave FETs
- 2013
-
Ingår i: 43rd European Microwave Conference, EuMC 2013 - Held as Part of the 16th European Microwave Week, EuMW 2013; Nuremberg; Germany; 7 October 2013 through 10 October 2013. - 9782874870316 ; , s. 267-270
-
Konferensbidrag (refereegranskat)abstract
- This paper discusses a procedure to extract large-signal models for microwave transistors. By using experimental data, which not necessarily reflect the actual operating conditions, accurate large-signal models, suitable for CAD tools and working at high frequencies, can be obtained by combining direct extraction of basic parameters and numerical optimization. The idea consists of linking the model parameters directly to experimental data. In this way the extraction procedure is sped up. Examples of large-signal models for GaAs and GaN transistors are reported.
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| 16. |
- Angelov, Iltcho, 1943, et al.
(författare)
-
Large signal evaluation of nonlinear HBT model
- 2007
-
Ingår i: IEICE Transactions on Electronics. - : Institute of Electronics, Information and Communications Engineers (IEICE). - 0916-8524 .- 1745-1353. ; E91C:7, s. 1091-1097
-
Konferensbidrag (refereegranskat)abstract
- The performance of recently developed Large Signal (LS) HBT model was evaluated with extensive LS measurements like Power spectrum, Load pull and Inter-modulation investigations. Proposed model has adopted temperature dependent leakage resistance and a simplified capacitance models. The model was implemented in ADS as SDD. Important feature of the model is that the main model parameters are taken directly from measurements in rather simple and understandable way. Results show good accuracy despite the simplicity of the model. To our knowledge the HBT model is one of a few HBT models which can handle high current & Power HBT devices, with significantly less model parameters with good accuracy.
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| 17. |
- Angelov, Iltcho, 1943, et al.
(författare)
-
Large Signal Model and Implementation of Impact Ionization for FET Devices
- 2010
-
Ingår i: Asia-Pacific Microwave Conference, APMC 2010; Yokohama; Japan; 7 December 2010 through 10 December 2010. - 9784902339222 ; , s. 2299-2302
-
Konferensbidrag (refereegranskat)abstract
- This paper presents a large signal model of impact ionization effects(Ii) of FETs and its CAD implementation. The Ii model is compact, describes the effects observed in the gate and drains current in a simple way, converges well in harmonic balance simulation. The model is verified for various FET devices and materials like GaAs SiC,GaN, and InSb. By using this model, the prediction accuracy for Pout and PAE is improved, especially when the device is pushed to the limits and impact ionization can be observed. When aware for the problem, the designer is able to construct in a better way the input and output matching circuits to avoid operating the device in the dangerous regions of operation and hence improve reliability.
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| 18. |
- Angelov, Iltcho, 1943, et al.
(författare)
-
Large-Signal Modelling and Comparison of AlGaN/GaN HEMTs and SiC MESFETs
- 2006
-
Ingår i: IEEE Asia PAcific Microwave Conference, 2006, Yokohama, Japan. - 9784902339116 ; , s. 279-282
-
Konferensbidrag (refereegranskat)abstract
- The Large Signal (LS) model for GaN and SiC FET devices was developed and evaluated with DC, S, and LS measurements. Special attention was paid to improve the management of harmonics and provide. a more physical treatment of the dispersion. The model was implemented in a commercial CAD tool and exhibit good overall accuracy.
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| 19. |
- Angelov, Iltcho, 1943, et al.
(författare)
-
Large-Signal Time-Domain Waveform-Based Transistor Modeling
- 2013
-
Ingår i: Microwave De-embedding: From Theory to Applications. - 9780124017009 ; , s. 189-223
-
Bokkapitel (övrigt vetenskapligt/konstnärligt)abstract
- Nonlinear models of microwave transistors are essential for the design of high-frequency nonlinear circuits, such as power amplifiers or mixers. Among the existing modeling techniques, measurement-based approaches have gained huge attention from researchers in the last decades. Especially, nonlinear measurements-driven model extraction is preferred for transistors exploited in the design of power amplifiers and mixers. This chapter mainly deals with the generation of empirical transistor models starting from large-signal time-domain waveforms. Specifically, a widely used model available in commercial CAD tools is adopted, and the extraction procedure of the model parameters is outlined in detail. Moreover the advantage of using time-domain waveforms at different frequencies is highlighted. More specifically, by making use of time-domain waveforms at frequencies in the kHz-MHz range, one can separately model the behavior of the transistor output current generator, which is more prone to low-frequency dispersive effects. In fact at low frequencies the effect of the nonlinear transistor capacitance is significantly reduced and, therefore, already "de-embedded" from the measured time-domain waveforms. Once the model of the output current generator is available, one can use high-frequency measurements to determine the nonlinear capacitances (or charges). Several modeling examples of different transistor technologies, such as gallium-arsenide and gallium-nitride, are reported. © 2014 Elsevier Ltd. All rights reserved.
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| 20. |
- Angelov, Iltcho, 1943, et al.
(författare)
-
Nonlinear active device modeling
- 2019
-
Ingår i: Radio Frequency and Microwave Power Amplifiers: Principles, Device Modeling and Matching Networks. ; , s. 73-165
-
Bokkapitel (övrigt vetenskapligt/konstnärligt)abstract
- The chapter covers main characteristics of the devices used in power amplifiers (PAs) and provides basic knowledge about the specifications of these devices and the transistor models that are used in PA designs. The Preface covers the basic characteristics of main semiconductor device types used in PA designs. These devices have been in use for many decades, the technology of which is well established and its production is repeatable with high yield. Now, these devices show really impressive results. They work up to the terahertz region and can deliver kilowatts of power at low radio frequencies (RF). Probably one of the most promising devices now is the GaN high-electron-mobility transistor (HEMT), and they yield high-power and high-frequency results in number of applications. There are a plenty number of literature on these devices regarding how to design PA, and using these transistors has put a tremendous success in its field. A very small part of these references is listed here. The models come in small signal (SS), large signal (LS) categories, and for all these devices, extraction procedures, software is available.
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| 21. |
- Angelov, Iltcho, 1943, et al.
(författare)
-
On the Compact Equivalent Circuit Modeling
- 2010
-
Ingår i: APMC 2010 invited workshop. ; APMC 2010 invited workshop:APMC 2010 invited workshop
-
Konferensbidrag (refereegranskat)
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| 22. |
- Angelov, Iltcho, 1943, et al.
(författare)
-
On the delay implementation in FET Large Signal Models
- 2020
-
Ingår i: 2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2020 - Proceedings. - 9781728126456
-
Konferensbidrag (refereegranskat)abstract
- Several options for implementing FET channel delay in user defined Large Signal models (LS) are discussed. The high importance of precise definition of reference planes for MMIC operating in mm waves is discussed as well. The delay implementation and a way to improve the reference planes accuracy was tested in a special two stage W-band test amplifier circuit. The LS model was used later to design several practical MMIC circuits.
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| 23. |
- Angelov, Iltcho, 1943, et al.
(författare)
-
On the High Frequency De-Embedding& Modeling of FET Devices
- 2009
-
Ingår i: 73rd ARFTG Microwave Measurement Conference Spring 2009 - Practical Applications of Nonlinear Measurements; Boston, MA; United States; 12 June 2009 through 12 June 2009. - 9781424434428 ; , s. 28-31
-
Konferensbidrag (refereegranskat)abstract
- At millimetre wave frequencies, deembedding techniques start to fail due to larger uncertainty in measurements. In this paper, various pads-transistor transitions are being analysed and measured. The usage of measurement versus simulation based characterisation of the embedding layout is evaluated. Applying suggested measuring, modelling extraction procedure, results up to 220 GHz are demonstrated.
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| 24. |
- Angelov, Iltcho, 1943, et al.
(författare)
-
On the implementation of device processing tolerances in FET Large Signal Models
- 2012
-
Ingår i: 2012 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMIC 2012. - 9781467329491
-
Konferensbidrag (refereegranskat)abstract
- Device technology is becoming quite mature and repeatable, but nevertheless, for various reasons, there are statistical variations in device parameters. These process variations will influence the accuracy of the designs and yield in production. The implementation of these variations in Large Signal Models is discussed in the paper.
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| 25. |
- Angelov, Iltcho, 1943, et al.
(författare)
-
On the Large Signal Evaluation and Modeling of GaN FET
- 2010
-
Ingår i: IEICE Transactions on Electronics. - 0916-8524. ; E93C:8, s. 1225-1233
-
Tidskriftsartikel (refereegranskat)abstract
- The large signal performance and model for GaN FET devices was evaluated with DC, S-parameters, and large signal measurements. The large signal model was extended with bias and temperature dependence of access resistances, modified capacitance and charge equations, as well as breakdown models. The model was implemented in a commercial CAD tool and exhibits good overall accuracy.
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| 26. |
- Angelov, Iltcho, 1943, et al.
(författare)
-
On the large-signal modeling of High Power AlGaN/GaN HEMTs
- 2012
-
Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467310871
-
Konferensbidrag (refereegranskat)abstract
- In this paper are given some recent results on modeling of High Power GaN HEMT devices. The GaN HEMT is very promising for high power application, but we push device to the limits, so many issues are becoming critical. For example, access resistances Rs, Rd in high power GAN HEMT are bias and temperature dependent-their extraction from cold FET measurements can lead to over optimistic prediction for output power. Thermal management, self-heating modeling are another very important issue-they influence reliability, power and PAE. Models without dynamic self-heating are not practical for GaN. The models without breakdown can easily predict world records for PAE, output power/mm etc. Some examples are given using vectorial Large Signal Measurements (LSNA/NVNA) to provide useful, global info about device behavior, influence of traps, knee voltage walkout etc.
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| 27. |
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| 28. |
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| 29. |
- Angelov, Iltcho, 1943
(författare)
-
On the Large-Signal Modelling of AlGaN/GaN HEMTs; GaAs ; and SiC MESFETs - Invited
- 2005
-
Ingår i: Target Tutorial QS Modeling. ; April:2005
-
Konferensbidrag (refereegranskat)abstract
- Abstract. A general purpose LS model for GaAs, GaN and SiC FET devices was developed and evaluated with DC, S, and Large Signal measurements (LS). The FET model is generalized and extended with new feature in order to improve the management of harmonics, provide a more physical treatment of the dispersion as well as delay and model other specific effects in these devices. The model was implemented in a commercial CAD tool and exhibit good overall accuracy.
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| 30. |
- Angelov, Iltcho, 1943, et al.
(författare)
-
On the Modeling of High Power FET Transistors
- 2016
-
Ingår i: 2016 11th European Microwave Integrated Circuits Conference (Eumic), London, England, Oct 03-04, 2016. - 9782874870446 ; , s. 245-248
-
Konferensbidrag (refereegranskat)abstract
- The paper address some of the problems faced when modeling high power and high power density GaN and GaAs FETs. When operating a high power levels (>1kW) additional effects are observed in GaN devices that are not seen in low power operation (1W). Similar effects start to act on GaAs devices when operated at high power densities. In order to account for these effects, FET models were extended to include temperature, and bias dependence of the access resistances, as well as inflection points in the transconductance, and capacitances. Thus enabling accurate models of the latest generation of enhancement mode, KV range FETs. The recent extensions are evaluated, implemented, and available in major CAD tools like ADS, Cadence, and Microwave office.
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| 31. |
- Angelov, Iltcho, 1943
(författare)
-
RF noise model for CMOS Transistors
- 2005
-
Ingår i: GHZ 2005 Upsala. ; 1:1, s. 205-209
-
Konferensbidrag (refereegranskat)abstract
- A RF Noise model for submicron CMOS transistors is proposed and implemented in commercial CAD tool. The model was experimentally evaluated and shows a good correspondence with the measurements.
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| 32. |
- Avolio, G., et al.
(författare)
-
A novel technique for the extraction of nonlinear model for microwave transistors under dynamic-bias operation
- 2013
-
Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467361767 ; , s. Art. no. 6697394-
-
Konferensbidrag (refereegranskat)abstract
- In this work we describe a novel technique for the extraction of nonlinear model for microwave transistors from nonlinear measurements obtained by simultaneously driving the device under test with low- and high-frequency excitations. Specifically, the large-signal operating point of the device is set by large-signal low-frequency excitations. On top of these a tickle tone at high-frequency is applied. In this way, one can separate the contributions of the IDS current source and the charge sources by a single measurement. The nonlinear model, based on equations available in commercial CAD tools, is extracted for a 0.15 μm GaAs pHEMT. Good agreement is obtained between model predictions and experimental data.
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| 33. |
- Avolio, G., et al.
(författare)
-
A procedure for the extraction of a nonlinear microwave GaN FET model
- 2017
-
Ingår i: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. - : Wiley. - 0894-3370 .- 1099-1204. ; 30:1, s. UNSP e2151-
-
Tidskriftsartikel (refereegranskat)abstract
- In this paper, we describe an extraction procedure of nonlinear models for microwave field-effect transistor (FET). We use a nonlinear model available in commercial CAD tools, and we extract the parameters by combining direct extraction and numerical optimization. We determine a first estimate of the model parameters by few DC and S-parameter measurements. Next, we refine the parameters by optimization against low-frequency and high-frequency vector-calibrated large-signal measurements gathered with a Large-Signal-Network Analyzer (LSNA). As case study we consider a 0.25x200 mu m(2) GaN FET on SiC for power amplifier applications. Ultimately, we want to show that a good accuracy level can be achieved while minimizing the extraction effort and that an accurate model can be built and suitably tailored depending on the final application.
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| 34. |
- Avolio, G., et al.
(författare)
-
Identification technique of FET model based on vector nonlinear measurements
- 2011
-
Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 47:24, s. 1323-U37
-
Tidskriftsartikel (refereegranskat)abstract
- A new modelling approach which exploits only vector nonlinear measurements is described. The parameters of the I-V and Q-V nonlinear constitutive functions are identified by combining low-and high-frequency large-signal measurements with a numerical optimisation routine. Low-frequency dispersion manifesting in the I-V characteristics is also correctly accounted for. As a case study a gallium nitride HEMT on silicon carbide substrate is considered and very good agreement between measurements and simulation is achieved.
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| 35. |
- Avolio, G., et al.
(författare)
-
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique
- 2014
-
Ingår i: IEEE Transactions on Microwave Theory and Techniques. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9480 .- 1557-9670. ; 62:11, s. 2526-2537
-
Tidskriftsartikel (refereegranskat)abstract
- In the paper, the nonlinear model of a microwave transistor is extracted from large-signal measurements acquired under "dynamic-bias" operation. Specifically, the transistor is driven by low-frequency large signals while a high-frequency tickle is applied on top of them. The low-frequency large signals, along with the dc bias voltages, set the large-signal operating point which represents a dynamic-bias condition for the device under test. Thanks to this technique, one can get at once and separately the nonlinear currents and charges of the transistor as a result of a very few nonlinear measurements. Additionally, the proposed technique allows one to accurately reconstruct the time-domain waveforms at the device-under-test terminals while the frequency of the tickle can be set as high as the bandwidth of today's vector calibrated nonlinear measurement systems (i.e., 67 GHz). The approach, which is general and independent of device technology, is applied on a 0.15-mu m GaAs pHEMT specifically designed for resistive cold-FET mixer applications.
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| 36. |
- Avolio, G., et al.
(författare)
-
Nonlinear model for 40-GHz cold-FET operation
- 2014
-
Ingår i: International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2014.
-
Konferensbidrag (refereegranskat)abstract
- We extract the nonlinear model of a 0.15 μm GaAs pHEMT for cold-FET mixer applications. The model parameters are extracted from experimental data obtained by simultaneously driving the device under test with low-frequency large signals and a tickle tone at the RF operating frequency. The advantage of this approach is twofold. Firstly, as a result of a single measurement one can get separately the nonlinear currents and charge. Secondly, one can perform nonlinear characterization, and subsequently modeling, even if the RF frequency is such that its harmonics cannot be measured by today's nonlinear network vector analyzers.
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| 37. |
- Avolio, G., et al.
(författare)
-
Small-Versus Large-Signal Extraction of Charge Models of Microwave FETs
- 2014
-
Ingår i: IEEE Microwave and Wireless Components Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 1558-1764 .- 1531-1309. ; 24:6, s. 394-396
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Tidskriftsartikel (refereegranskat)abstract
- In this letter we extract the parameters of the charge equations of a microwave transistor nonlinear model which is available in commercial CAD tools. In particular, the charge model parameters are extracted starting from small- and large-signal measurements. A better accuracy can be achieved when using large-signal measurements since the model parameters are obtained from experimental data which better reproduce the actual operating condition of the device under test. An advanced 0.15 x 300 mu m(2) pHEMT in GaAs technology, aimed at cold-FET mixer design, is considered as case study.
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| 38. |
- Avolio, G., et al.
(författare)
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Waveforms-based large-signal identification of transistor models
- 2012
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467310871
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Konferensbidrag (refereegranskat)abstract
- Measurements of low-and high-frequency vector-calibrated large-signal waveforms are exploited in this work to identify the parameters of a FET nonlinear model. The I DS nonlinear current source and the nonlinear charge sources' parameters are respectively determined from a small set of low-(2 MHz) and high-frequency (8 GHz) load-pull measurements by using a least square numerical optimization. Under low-frequency operation the contribution of the charge sources and any other reactive element can be neglected. In this way the identification of the IDS parameters is more accurate while remarkably speeding up the optimization routine as well. The proposed procedure is quite general and can be applied to different types of active devices. As case study, a 0.25-μm GaAs pHEMT is considered and the extracted model is validated under conditions different than the ones exploited within the identification step. A very good agreement between model predictions and experimental data is achieved.
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| 39. |
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| 40. |
- Cherednichenko, Serguei, 1970, et al.
(författare)
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The Direct Detection Effect in the Hot-Electron Bolometer Mixer Sensitivity Calibration
- 2007
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 55:3, s. 504-510
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Tidskriftsartikel (refereegranskat)abstract
- We investigate an error in the noise temperature measurements of the hot-electron bolometer mixers caused by the so-called "direct detection effect". The effect originates in the changing of the mixer parameters when the mixer is loaded on calibration black body sources at different temperatures (300 and 77 K). A correction factor was obtained from the mixer output power versus the bias current dependence, measured by: 1) the local oscillator (LO) power tuning: 2) mixer heating: and 3) application of an external RF source. Furthermore, the direct detection effect was assessed by elimination of the heterodyne response using a LO frequency, which is far off the mixer RF band. We show that the direct detection effect can be mitigated by using an isolator between the mixer and the IF amplifier.
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| 41. |
- Crupi, G., et al.
(författare)
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Analysis of quasi-static assumption in nonlinear finFET model
- 2008
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Ingår i: 2008 17th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2008. - 9788390666280
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Konferensbidrag (refereegranskat)abstract
- The construction and validation of a quasi-static nonlinear microwave model for FinFETs are investigated. A very good agreement between model simulations and measurements is obtained under different DC bias points, input power levels, fundamental frequencies up to 5 GHz, and device geometries. Since the intrinsic part of the FET model is based on the quasi-static approximation, the goal of this work is to analyze in detail the limitations of this assumption by examining the intrinsic admittance parameters versus the frequency.
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| 42. |
- Crupi, G., et al.
(författare)
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Combined empirical and look-up table approach for non-quasi-static modelling of GaN HEMTs
- 2009
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Ingår i: 9th International Conference on Telecommunications in Modern Satellite, Cable, and Broadcasting Services, TELSIKS 2009 - Proceedings of Paper. - 9781424443833 ; , s. 40-43
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Konferensbidrag (refereegranskat)abstract
- In this paper the empirical and the look-up table approaches are combined to accurately model a gallium nitride based HEMT on silicon carbide. That solution allows to exploit the advantages of both approaches. The validity of the extracted model is verified by comparing model simulations with DC and microwave measurements.
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| 43. |
- Crupi, G., et al.
(författare)
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Non-linear FinFET Modeling: Lookup Table and Empirical Approaches
- 2008
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Ingår i: International Journal of Microwave and Optical Technology. - 1553-0396. ; 3:3, s. 157-164
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Tidskriftsartikel (refereegranskat)abstract
- The non-linear microwave modeling of advanced transistors is becoming more and more essential to the design and fabrication processes. Consequently, this study is focused on the equivalent circuit based non-linear microwave modeling of FinFET. An accurate multi-bias small signal equivalent circuit is extracted and subsequently used for analytically constructing a non-linear full blown lookup table model. Furthermore, an alternative model implementation, which is based on empirical expressions, is investigated. The validity of both non-linear modeling approaches is confirmed by the good agreement between model simulations and large signal measurements.
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| 44. |
- Crupi, G., et al.
(författare)
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Purely analytical extraction of an improved nonlinear FinFET model including non-quasi-static effects
- 2009
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317. ; 86:11, s. 2283-2289
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Tidskriftsartikel (refereegranskat)abstract
- An analytical procedure is proposed for extracting a new nonlinear FinFET model, which accounts for non-quasi static effects. The accuracy and the robustness of the obtained nonlinear model are completely validated through the comparison between simulated and measured device behaviour in both linear and nonlinear cases. This study clearly shows that the inclusion of the non-quasi-static phenomena leads to significant model simulation improvements, which become more pronounced at higher frequency. (C) 2009 Elsevier B.V. All rights reserved.
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| 45. |
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| 46. |
- Ferndahl, Mattias, 1973, et al.
(författare)
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CMOS devices and circuits for microwave and millimetre wave applications
- 2005
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Ingår i: 13th European Gallium Arsenide Conference. ; , s. 105-8
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Konferensbidrag (refereegranskat)abstract
- We present several building blocks for RFfront ends at micro and mm-wave frequencies using 90 nmCMOS. The designs are 20 GHz single- and 40 GHz doublestage amplifiers with 5.6 and 7.3 dB gain respectively, a 20GHz resistive mixer with CL = 7.9 dB and IIP3 = 17.5 dBmplus frequency doublers to 40 and 60 GHz with CL = 15.8and 15.3 dB respectively. All circuits have been designedusing distributed elements. Both using a 5 metal layerBEOL process and a 3 metal layer BEOL with postprocessing.
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| 47. |
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| 48. |
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| 49. |
- Gavell, Marcus, 1981, et al.
(författare)
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A High Voltage mm-wave Stacked HEMT Power Amplifier in 0.1 mu m m InGaAs Technology
- 2015
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Ingår i: 2015 IEEE MTT-S International Microwave Symposium, IMS 2015. - 9781479982752
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Konferensbidrag (refereegranskat)abstract
- A stacked HEMT PA has been designed and implemented in a commercial 0.1 mu m InGaAs pHEMT process to increase gain and output power at mm-waves. Measurements on the 3-stage PA with parallel devices verify saturated output power of 25 dBm and maximum PAE of 15 % at 61 GHz, which is the highest reported output power of similar designs and topologies. The chip size measures 3.2 mm(2) which makes this the most power dense V-band amplifier reported from GaAs with 100 mW/mm(2).
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| 50. |
- Gavell, Marcus, 1981, et al.
(författare)
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A V-Band Stacked HEMT Power Amplifier With 25-dBm Saturated Output Power in 0.1-mu m InGaAs Technology
- 2016
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9480 .- 1557-9670. ; 64:12, s. 4232-4240
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Tidskriftsartikel (refereegranskat)abstract
- A stacked high-electron mobility transistor (HEMT) power amplifier (PA) has been designed and implemented in a commercial 0.1-mu m InGaAs pHEMT process to increase gain and output power at millimeter-wave frequencies. The stability problem of the stacked HEMT has been analyzed. A new layout of the stacked HEMT for improving the high frequency stability is proposed and used in the PA design. Measurements on the three-stage PA with parallel devices verify the saturated output power of 25 dBm and the maximum power added efficiency of 15% at 61 GHz, which is the highest reported output power of stacked HEMT PAs. The chip size measures 3.2 mm(2) which makes this the most power dense V-band amplifier reported from GaAs with 100 mW/mm(2).
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