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- Darakchieva, Vanya, 1971-, et al.
(författare)
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Effects of strain and composition on the lattice parameters and applicability of Vegard's rule in Al-rich Al1-x Inx N films grown on sapphire
- 2008
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 103:10, s. 103513-
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Tidskriftsartikel (refereegranskat)abstract
- The lattice parameters and strain evolution in Al1-x In x N films with 0.07≤x≤0.22 grown on GaN-buffered sapphire substrates by metal organic vapor phase epitaxy have been studied by reciprocal space mapping. Decoupling of compositional effects on the strain determination was accomplished by measuring the In contents in the films both by Rutherford backscattering spectrometry (RBS) and x-ray diffraction (XRD). Differences between XRD and RBS In contents are discussed in terms of compositions and biaxial strain in the films. It is suggested that strain plays an important role for the observed deviation from Vegard's rule in the case of pseudomorphic films. On the other hand, a good agreement between the In contents determined by XRD and RBS is found for Al1-x Inx N films with low degree of strain or partially relaxed, suggesting applicability of Vegard's rule in the narrow compositional range around the lattice matching to GaN. © 2008 American Institute of Physics.
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| 2. |
- Darakchieva, Vanya, 1971-, et al.
(författare)
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Strain and compositional analyzes of Al-rich Al1-xInxN alloys grown by MOVPE : impact on the applicability of Vegard's rule
- 2008
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Ingår i: Physica Status Solidi (C) Current Topics in Solid State Physics. - : Wiley. ; , s. 1859-1862
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Konferensbidrag (refereegranskat)abstract
- We have studied composition and strain in Al1–xInxN films with 0.128≤ x≤ 0.22 grown on GaN-buffered sapphire substrates by metalorganic vapor phase epitaxy. A good agreement between the In contents determined by Rutherford backscattering spectrometry (RBS) and Xray diffraction (XRD) is found for x≤ 18, suggesting applicability of Vegard's rule in the narrow compositional range around the lattice matching to GaN. The increase of the In content up to x = 0.22 leads to a formation of sub-layers with a higher composition, accompanied by deviations from Vegard's rule. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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| 3. |
- Manfred, Beckers, 2000-, et al.
(författare)
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Phase stability of epitaxially grown Ti2AlN thin films
- 2006
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 89:7
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Tidskriftsartikel (refereegranskat)abstract
- The phase stability of Mn+1AXn phase (M: early transition metal, A: A-group element, and X: C and/or N) Ti2AlN thin films reactively sputtered onto MgO(111) and Al2O3(0001) substrates has been investigated by in situ x-ray diffraction and Rutherford backscattering. High substrate temperature deposition results in epitaxial Ti2AlN growth with basal planes parallel to the substrate surface. In contrast to reported high thermal stability for bulk Ti-Al-N M n+1AXn phases in air, Ti2AlN thin films in vacuum decompose already at ∼800°C. The decomposition proceeds by outward Al diffusion and evaporation, followed by detwinning of the as-formed Ti2N atomic layers into cubic TiNx and intermediate phases. © 2006 American Institute of Physics.
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