1. |
- Niemi, MEK, et al.
(författare)
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- 2021
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swepub:Mat__t
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2. |
- Kanai, M, et al.
(författare)
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- 2023
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swepub:Mat__t
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3. |
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4. |
- Buchholt, Kristina, et al.
(författare)
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Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)
- 2012
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Ingår i: Journal of Crystal Growth. - : Elsevier. - 0022-0248 .- 1873-5002. ; 343:1, s. 133-137
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial Ti3GeC2 thin films were deposited on 4 degrees off-cut 4H-SiC(0001) using magnetron sputtering from high purity Ti, C, and Ge targets. Scanning electron microscopy and helium ion microscopy show that the Ti3GeC2 films grow by lateral step-flow with {11 (2) over bar0} faceting on the SiC surface. Using elastic recoil detection analysis, atomic force microscopy, and X-Ray diffraction the films were found to be substoichiometric in Ge with the presence of small Ge particles at the surface of the film.
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