| 1. |
- Ben Sedrine, N., et al.
(författare)
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Effect of nitrogen on the GaAs0.9-xNxSb0.1 dielectric function from the near-infrared to the ultraviolet
- 2010
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Ingår i: Applied Physics Letters. - : American Institute of Physics. - 0003-6951 .- 1077-3118. ; 97:20, s. 201903-
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Tidskriftsartikel (refereegranskat)abstract
- We study the effect of nitrogen on the GaAs0.9-xNxSb0.1 (x = 0.00, 0.65%, 1.06%, 1.45%, and 1.90%) alloy dielectric function by spectroscopic ellipsometry in the energy range from 0.73 to 4.75 eV. The compositional dependences of the critical points energies for the GaAs0.9-xNxSb0.1 are obtained. In addition to the GaAs intrinsic transitions E-1, E-1+ Delta(1), and E-0, the nitrogen-induced Gamma-point optical transitions E-0 and E+, together with a third transition E-#, are identified. We find that with increasing the N content, the E-0 transition shifts to lower energies while the E+ and (E)# transitions shift to higher energies. We suggest that the origin of the E-0, E+, and E-# transitions may be explained by the double band anticrossing (BAC) model, consisting of a conduction BAC model and a valence BAC model.
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| 2. |
- Ben Sedrine, N., et al.
(författare)
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Fluctuating potentials in GaAs : Si nanowires: Critical reduction of the influence of polytypism on the electronic structure
- 2018
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Ingår i: Nanoscale. - : Royal Society of Chemistry (RSC). - 2040-3364 .- 2040-3372. ; 10:8, s. 3697-3708
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Tidskriftsartikel (refereegranskat)abstract
- In this work, the effects of Si doping in GaAs nanowires (NWs) grown on GaAs (111)B by molecular beam epitaxy with different Si doping levels (nominal free carrier concentrations of 1 × 1016, 8 × 1016, 1 × 1018 and 5 × 1018 cm-3) are deeply investigated using scanning electron microscopy (SEM), transmission electron microscopy (TEM), grazing incidence X-ray diffraction (GID), photoluminescence (PL) and cathadoluminescence (CL). TEM results reveal a mixture of wurtzite (WZ) and zinc-blende (ZB) segments along the NW axis independently of the Si doping levels. GID measurements suggest a slight increase of the ZB fraction with the Si doping. Low temperature PL and CL spectra exhibit sharp lines in the energy range 1.41-1.48 eV, for the samples with lower Si doping levels. However, the emission intensity increases and is accompanied by a clear broadening of the observed lines for the samples with higher Si doping levels. The staggered type-II band alignment only determines the optical properties of the lower doping levels in GaAs:Si NWs. For the higher Si doping levels, the electronic energy level structure of the NWs is determined by electrostatic fluctuating potentials intimately related to the amphoteric behavior of the Si dopant in GaAs. For the heavily doped NWs, the estimated depth of the potential wells is ∼96-117 meV. Our results reveal that the occurrence of the fluctuating potentials is not dependent on the crystalline phase and shows that the limitation imposed by the polytypism can be overcome.
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| 3. |
- Ben Sedrine, N, et al.
(författare)
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Optical properties of GaAs0.9-xNxSb0.1 alloy films studied by spectroscopic ellipsometry
- 2011
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Ingår i: THIN SOLID FILMS. - : ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND. - 0040-6090. ; 519:9, s. 2838-2842
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Tidskriftsartikel (refereegranskat)abstract
- Spectroscopic ellipsometry from 0.73 to 4.75 eV was used to study the optical properties of epitaxial GaAs0.9-xNxSb0.1 layers with x=0.00, 0.65, 1.06, 1.45 and 1.90%. The ellipsometric experimental spectra were fitted using a multilayer model employing the model dielectric function to describe the GaAs0.9-xNxSb0.1 optical response. We have identified the Gamma-point E-0, E+, and E-# transitions of GaAs0.9-xNxSb0.1 and have determined the effect of nitrogen on the respective transition energies. We have demonstrated that a lower N content can provide an equal E+-E-0 energy splitting for GaAs0.9-xNxSb0.1 with respect to GaAs1-xNx.
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| 4. |
- Hofmann, T., et al.
(författare)
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Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures
- 2012
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 101:19
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Tidskriftsartikel (refereegranskat)abstract
- The temperature-dependence of free-charge carrier mobility, sheet density, and effective mass of a two-dimensional electron gas in a AlGaN/GaN heterostructure deposited on SiC substrate is determined using the THz optical Hall effect in the spectral range from 0.22 to 0.32 THz for temperatures from 1.5 to 300 K. The THz optical Hall-effect measurements are combined with room temperature mid-infrared spectroscopic ellipsometry measurements to determine the layer thickness, phonon mode, and free-charge carrier parameters of the heterostructure constituents. An increase of the electron effective mass from (0.22 +/- 0.01)m(0) at 1.5 K to (0.36 +/- 0.03)m(0) at 300 K is observed, which is indicative for a reduction in spatial confinement of the two-dimensional electron gas at room temperature. The temperature-dependence of the mobility and the sheet density is in good agreement with electrical measurements reported in the literature.
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| 5. |
- Schöche, S., et al.
(författare)
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Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN
- 2013
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Ingår i: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 113:1, s. 013502-
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Tidskriftsartikel (refereegranskat)abstract
- Infrared to vacuum-ultraviolet spectroscopic ellipsometry and far-infrared optical Hall-effect measurements are applied to conclude on successful p-type doping of InN films. A representative set of In-polar Mg-doped InN films with Mg concentrations ranging from 1.2 x 10(16) cm(-3) to 3.9 x 10(21) cm(-3) is investigated. The data are compared and discussed in dependence of the Mg concentration. Differences between n-type and p-type conducting samples are identified and explained. p-type conductivity in the Mg concentration range between 1.1 x 10(18) cm(-3) and 2.9 x 10(19) cm(-3) is indicated by the appearance of a dip structure in the infrared spectral region related to a loss in reflectivity of p-polarized light as a consequence of reduced LO phonon plasmon coupling, by vanishing free-charge carrier induced birefringence in the optical Hall-effect measurements, and by a sudden change in phonon-plasmon broadening behavior despite continuous change in the Mg concentration. By modeling the near-infrared-to-vacuum-ultraviolet ellipsometry data, information about layer thickness, electronic interband transitions, as well as surface roughness is extracted in dependence of the Mg concentration. A parameterized model that accounts for the phonon-plasmon coupling is applied for the infrared spectral range to determine the free-charge carrier concentration and mobility parameters in the doped bulk InN layer as well as the GaN template and undoped InN buffer layer. The optical Hall-effect best-match model parameters are consistent with those obtained from infrared ellipsometry analysis.
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| 6. |
- Sedrine, N. Ben, et al.
(författare)
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Optical properties of InN/In0.73Ga0.27N multiple quantum wells studied by spectroscopic ellipsometry
- 2011
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Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 8:5, s. 1629-1632
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Tidskriftsartikel (refereegranskat)abstract
- In this work we study the optical properties of two high quality fifty-periods of In-polarity InN/In0.73Ga0.27N MQWs samples, grown by radio-frequency plasma-assisted molecular beam epitaxy, with different well (0.5-1 nm) and barrier thicknesses (3-4 nm). We employ spectroscopic ellipsometry at room temperature in the energy range from 0.6 to 6 eV, and incidence angles of 60 and 70°. Ellipsometric data were successfully modelled using the model dielectric function approach and a multilayer model assuming the MQWs as a homogeneous layer. The E0, A and E1 MQWs transition energies were determined and found to exhibit a blueshift with decreasing the well thickness.
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| 7. |
- Shtepliuk, Ivan, et al.
(författare)
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Interplay between thin silver films and epitaxial graphene
- 2020
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Ingår i: Surface & Coatings Technology. - : ELSEVIER SCIENCE SA. - 0257-8972 .- 1879-3347. ; 381
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Tidskriftsartikel (refereegranskat)abstract
- Thin Ag films, with nominal thickness in the range 2 to 30 nm, are deposited using direct current magnetron sputtering and film morphology is studied by means of plan-view scanning electron microscopy. We find that for 2 mn nominal thickness the film surface consists of isolated circular nanoscale islands, which become interconnected as further material is deposited, leading to a continuous film at a nominal thickness of 30 nm. Our experimental findings are discussed in the context of the density functional theory results, which show that van der Waals forces dominate the interaction between Ag and epitaxial graphene. We also performed micro-Raman analysis and we find that the G and 2D modes of epitaxial graphene exhibit a red-shift upon Ag-layer deposition; which is interpreted as a result of charge transfer at the Ag/graphene interface. Moreover, we observed a pronounced enhancement of the G peak amplitude and area irrespective of the film nominal thickness and morphology, which we attribute to a combination of the charge transfer and plasmonic resonance effects. Our observations provide a critical information on the interaction between Ag and epitaxial graphene, which can be useful to design electronic and sensing devices based on Ag-epitaxial graphene hybrids.
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| 8. |
- Shtepliuk, Ivan, et al.
(författare)
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Silver nanoparticle array on weakly interacting epitaxial graphene substrate as catalyst for hydrogen evolution reaction under neutral conditions
- 2021
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 119:15
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Tidskriftsartikel (refereegranskat)abstract
- The paucity of research on hydrogen evolution reaction (HER) under neutral conditions, which is a more sustainable way to produce H-2 compared to acidic and alkaline HER, encourages the development of efficient catalytic materials and devices and deeper investigation of the mechanisms behind neutral HER. We present an electrode concept for facilitating HER under neutral conditions. The concept entails the use of annealing-reshaped silver (Ag) nanoparticle array on monolayer epitaxial graphene (MEG) on 4H-SiC. Measurements of HER performance show more positive onset potential of the cathodic HER for Ag-decorated MEG compared to that for pristine MEG, indicating improved water dissociation at Ag/MEG electrodes. Complementary morphological characterization, absorption measurements, and Raman mapping analysis enable us to ascribe the enhanced catalytic performance of electrodes decorated with 2 nm thick annealed Ag on the synergetic effect originating from simultaneous water reduction on circular Ag nanoparticles of 31 nm in diameter and on compressively strained Ag-free graphene regions. The overall results pave the way toward development of stable van der Waals heterostructure electrodes with a tunable metal-carbon interaction for fast HER under neutral conditions. (C) 2021 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
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| 9. |
- Smazna, Daria, et al.
(författare)
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Buckminsterfullerene hybridized zinc oxide tetrapods : defects and charge transfer induced optical and electrical response
- 2018
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Ingår i: Nanoscale. - : Royal Society of Chemistry (RSC). - 2040-3364 .- 2040-3372. ; 10:21, s. 10050-10062
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Tidskriftsartikel (refereegranskat)abstract
- Buckminster fullerene (C-60) based hybrid metal oxide materials are receiving considerable attention because of their excellent fundamental and applied aspects, like semiconducting, electron transfer, luminescent behaviors, etc. and this work briefly discusses the successful fabrication of C-60 decorated ZnO tetrapod materials and their detailed structure-property relationships including device sensing applications. The electron microscopy investigations indicate that a quite dense surface coverage of ZnO tetrapods with C-60 clusters is achieved. The spectroscopy studies confirmed the identification of the C-60 vibrational modes and the C-60 induced changes in the absorption and luminescence properties of the ZnO tetrapods. An increased C-60 concentration on ZnO results in steeper ZnO bandgap absorption followed by well-defined free exciton and 3.31 eV line emissions. As expected, higher amounts of C-60 increase the intensity of C-60-related visible absorption bands. Pumping the samples with photons with an energy corresponding to these absorption band maxima leads to additional emission from ZnO showing an effective charge transfer phenomenon from C-60 to the ZnO host. The density of states model obtained from DFT studies for pure and C-60 coated ZnO surfaces confirms the experimental observations. The fabricated C-60-ZnO hybrid tetrapod based micro- and nanodevices showed interesting ethanol gas sensing characteristics.
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| 10. |
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