| 1. |
- Bhadoria, Shubhangi, et al.
(författare)
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Comparison of Top and Bottom Cooling for Short Duration of Over-Currents for SiC Devices: An Analysis of the Quantity and Location of Heat-Absorbing Materials
- 2024
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Ingår i: IEEE Open Journal of Power Electronics. - : Institute of Electrical and Electronics Engineers (IEEE). - 2644-1314. ; 5, s. 765-778
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Tidskriftsartikel (refereegranskat)abstract
- The fault clearance time in the power system can vary from a few milliseconds to a few hundred milliseconds. Power electronics converters should be able to provide the increased current during faults without failing due to thermal limits. Hence, the heat generated in the semiconductor chip due to the over-current (OC) should be removed as soon as it is generated. In this paper, cooling by heat-absorbing material has been investigated on the top, bottom, and top + bottom of the SiC MOSFET chip using COMSOL simulations for OCs. The heat-absorbing materials considered in the paper are copper, graphite, and aluminum. The maximum allowed chip temperature is assumed to be 250 ˆC since SiC devices do not fail in this range of temperature. It is concluded that the cooling on the top of the chip has the best performance among the three arrangements discussed in the paper in terms of OC duration and steady-state temperature. Another conclusion is that copper has the best performance due to higher thermal capacity for the same volume of the heat-absorbing material.
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| 2. |
- Bhadoria, Shubhangi, et al.
(författare)
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Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters : An Overview
- 2023
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Ingår i: IEEE transactions on power electronics. - : Institute of Electrical and Electronics Engineers Inc.. - 0885-8993 .- 1941-0107. ; 38:3, s. 3569-3589
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Tidskriftsartikel (refereegranskat)abstract
- With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/ overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technologies for the overcurrent performance of SiC power modules in power electronics converters. It presents the limitations produced at the power module level by packaging materials, which include semiconductor chips, substrates, metallization, bonding techniques, die attach, and encapsulation materials. Specifically, technologies for overcurrent related temperatures in excess of 200°C are discussed. This article also discusses potential technologies, which have been proven or may be potential candidates for improving the safe operating area. The discussed technologies are use of phase-change materials below the semiconductor chip, Peltier elements, new layouts of the power modules, control and modulation techniques for converters. Special attention has been given to an overview of various potential phase-change materials, which can be considered for high-temperature operations.
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| 3. |
- Bhadoria, Shubhangi, et al.
(författare)
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Enabling Short-Term Over-current Capability of SiC Devices using Microchannel Cooling
- 2023
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Ingår i: Proceedings 29th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC). - : Institute of Electrical and Electronics Engineers (IEEE).
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Konferensbidrag (refereegranskat)abstract
- Fault clearance time in the power system with renewables generally varies from 0.5-10 cycles (10-667 ms for 50 Hz). Power electronic converters should be able to provide an increased current without exceeding the thermal limits during faults. Accordingly, the heat generated in the semiconductor chip during over-current (OCs) should be removed from the chip as soon as it is generated. In this paper, microchannel (MC) cooling has been investigated through COMSOL simulations for OCs with SiC MOSFETs. The upper limit of the chip temperature has been assumed to be 250 °C as SiC devices do not fail in this temperature range. The duration of OCs is from a few tens of milliseconds to a few seconds. It is concluded that MC cooling has the potential to increase the duration of OC without reaching the assumed upper limit of the temperature.
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| 4. |
- Bhadoria, Shubhangi, et al.
(författare)
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Over-current Capability of SiC Devices for Short Power and Heat Pulses
- 2023
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Ingår i: 2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2023. - : Institute of Electrical and Electronics Engineers (IEEE).
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Konferensbidrag (refereegranskat)abstract
- Unsymmetrical faults in the power system typically last for approximately 200 ms until the circuit breakers clear the faults. Hence, it is important to ensure that power semiconductors in converters do not fail due to the associated increased current. This is possible if the heat generated in the SiC device due to over-currents (OCs) is removed as soon as possible. Various materials such as metals (copper, aluminum, nickel, silver and gold), diamond, graphite and phase change materials for removing the heat just below/above the semiconductor have been considered in this paper. The calculations and COMSOL simulations have been performed assuming a heat pulse on one side of the material and adiabatic conditions on the other side. This assumption is valid for short pulses as the components further away would take more time to absorb heat. It has been concluded that the higher thermal conductivity, the faster is the removal of the heat from the semiconductor. Because of this, metals, diamond and graphite have been proven to be more effective in heat removal and keeping the temperature below 250°C during OCs for the heat pulse of 400 W/cm2 for 200 ms. The concept of sensible height and limitations of the use of the materials is also discussed. There is a limit to the reduction of junction temperature by adding and increasing the amount of material above the chip. After this limit, the further reduction of junction temperature is not possible, even by increasing the amount of material. This limit reached is different for different materials.
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| 5. |
- Bhadoria, Shubhangi, et al.
(författare)
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Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip
- 2024
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Ingår i: Energies. - : MDPI. - 1996-1073. ; 17:2, s. 462-
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Tidskriftsartikel (refereegranskat)abstract
- An increasing share of fluctuating and intermittent renewable energy sources can cause over-currents (OCs) in the power system. The heat generated during OCs increases the junction temperature of semiconductor devices and could even lead to thermal runaway if thermal limits are reached. In order to keep the junction temperature within the thermal limit of the semiconductor, the power module structure with heat-absorbing material below the chip is investigated through COMSOL Multiphysics simulations. The upper limits of the junction temperature for Silicon (Si) and Silicon Carbide (SiC) are assumed to be 175 and 250 ∘∘C, respectively. The heat-absorbing materials considered for analysis are a copper block and a copper block with phase change materials (PCMs). Two times, three times, and four times of OCs would be discussed for durations of a few hundred milliseconds and seconds. This article also discusses the thermal performance of a copper block and a copper block with PCMs. PCMs used for Si and SiC are LM108 and Lithium, respectively. It is concluded that the copper block just below the semiconductor chip would enable OC capability in Si and SiC devices and would be more convenient to manufacture as compared to the copper block with PCM.
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| 6. |
- Czajkowski, Adrian, et al.
(författare)
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Prediction of the Market of End-of-Life Photovoltaic Panels in the Context of Common EU Management System
- 2023
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Ingår i: Energies. - : MDPI AG. - 1996-1073. ; 16:1, s. 284-
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Tidskriftsartikel (refereegranskat)abstract
- A significant development of the photovoltaic market in the European Union has been observed recently. This is mainly due to the adopted climate policy and the development of photovoltaic technology, resulting in increased availability for consumers at lower prices. In the long run, increased installed PV capacity is associated with an increased amount of photovoltaic waste generated at the end of life. Since this waste belongs to the group of WEEE (waste electrical and electronic equipment) waste, it is subjected to high recovery levels. Existing installations for the highly efficient recycling of PV panels are just proofs of concept. However, the situation will change in the near future, and it will be necessary to implement a full-scale waste management system dedicated to PV waste. The paper estimates mass streams of photovoltaic waste generated by 2050 in individual EU countries. Consequently, the characteristics of the European market of waste PV panels are considered together with the demand of individual Member States for installations. The estimation enables the fulfillment of the Directive on WEEE recovery rates.
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