SwePub
Sök i SwePub databas

  Utökad sökning

Träfflista för sökning "WFRF:(Borgström Lars) "

Sökning: WFRF:(Borgström Lars)

  • Resultat 1-50 av 186
Sortera/gruppera träfflistan
   
NumreringReferensOmslagsbildHitta
1.
  • Bondesson, Eva, et al. (författare)
  • In vitro and in vivo aspects of quantifying intrapulmonary deposition of a dry powder radioaerosol.
  • 2002
  • Ingår i: International Journal of Pharmaceutics. - 1873-3476. ; 232:1-2, s. 149-156
  • Tidskriftsartikel (refereegranskat)abstract
    • Pulmonary delivery of pharmaceutical aerosols can be quantified using gamma scintigraphy. Technetium-99m, the most commonly used radionuclide in scintigraphic studies, cannot be incorporated into the drug molecule and, therefore, may be distributed differently from the drug itself, particularly if the drug is presented as a solid in a liquid suspension or as a dry powder formulation. This study demonstrated the importance of using conditions relevant to the in vivo situation in the in vitro characterisation of a dry powder aerosol of 99mTc-labelled lactose. The influence of inspiratory flow on the distribution of aerosol within the lungs was investigated in eight healthy subjects who inhaled the 99mTc-labelled lactose at four flows (30,40,60 and 80 l/min). No differences in penetration index (PI) or count density distribution of radioactivity were seen, indicating that regional distribution of aerosol in healthy airways was insensitive to differences in the inspiratory effort exerted by the subject while inhaling the experimental dry powder radioaerosol.
  •  
2.
  •  
3.
  •  
4.
  • Borgström, Magnus, et al. (författare)
  • Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
  • 2003
  • Ingår i: Journal of Crystal Growth. - 0022-0248. ; 248, s. 310-316
  • Tidskriftsartikel (refereegranskat)abstract
    • In this paper. we present the effect of annealing temperature and annealing time on InAs site-controlled quantum dot growth. Individual InAs quantum dots formed by self-assembling have been positioned into holes, created by partial overgrowth of electron beam induced nano-carbon deposits by metal organic vapor phase epitaxy. As/P exchange reactions produce material sufficient for selective dot nucleation in the holes. Results. showing that As/P exchange reactions occur even when capping the dots with InP are presented. (C) 2002 Elsevier Science B.V. All rights reserved.
  •  
5.
  • Borgström, Magnus, et al. (författare)
  • Site-control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
  • 2002
  • Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
  • Konferensbidrag (refereegranskat)abstract
    • We present the effect of annealing temperature and annealing time on InAs/InP site-controlled quantum dot growth. Electron beam pre-patterning forms carbon nano-deposits at the InP surface, which then can be used as growth masks to form nano-holes at the surface. By only annealing of the patterned InP surface under an arsine ambient, As/P exchange reactions produce material sufficient for selective dot nucleation in the holes at the surface
  •  
6.
  • Bryllert, Tomas, et al. (författare)
  • Designed emitter states in resonant tunneling through quantum dots
  • 2002
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 80:15, s. 2681-2683
  • Tidskriftsartikel (refereegranskat)abstract
    • Resonant tunneling through a single layer of self-assembled quantum dots (QDs) is compared to tunneling through two layers of vertically aligned (stacked) dots. The difference can be viewed as going from a two-dimensional emitter to a zero-dimensional emitter. The temperature dependence of current peaks originating in tunneling through individual QDs and individual stacks is used to clarify this point. In addition, we show that the statistical size distribution of self-assembled quantum dots causing the inhomogeneous broadening in luminescence experiments can be analyzed in a resonant tunneling experiment. (C) 2002 American Institute of Physics.
  •  
7.
  • Bryllert, Tomas, et al. (författare)
  • Resonant tunneling through coupled self-assembled quantum dots and the influence of inhomogeneous broadening
  • 2002
  • Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
  • Konferensbidrag (refereegranskat)abstract
    • Resonant tunneling through a single layer of self-assembled quantum dots (QDs) as well as tunneling through two layers of vertically aligned (stacked) dots is investigated. The difference between single and double layers of QDs can be viewed as going from a two-dimensional emitter to a zero-dimensional emitter. By fabricating small-area devices we are able to probe single stacks of quantum dots, revealing details of the coupling between the stacked dots. Very sharp resonances, with peak-to-valley ratios of several hundred, have been measured in the current-voltage characteristics. We also show that the statistical size distribution of self-assembled quantum dots causing the inhomogeneous broadening in luminescence experiments can be analysed in a resonant tunneling experiment
  •  
8.
  • Bryllert, Tomas, et al. (författare)
  • Transport through an isolated artificial molecule formed from stacked self-assembled quantum dots
  • 2003
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 82:16, s. 2655-2657
  • Tidskriftsartikel (refereegranskat)abstract
    • We investigate resonant tunneling through two coupled self-assembled quantum dots. The strong confinement and the high crystalline quality provided by the self-assembled dots, in combination with the tunneling coupling between the dots, create a system that may be thought of as an artificial molecule. We are able to isolate one single artificial molecule and detailed investigations of the electrical properties are performed. Peak-to-valley ratios above 1000 and full width half maximum of a few millivolts are measured at 4 K. By changing the temperature we also observe Coulomb blockade effects in a different way. (C) 2003 American Institute of Physics.
  •  
9.
  • Carlberg, Patrick, et al. (författare)
  • Nanoimprint - a tool for realizing nano-bio research
  • 2004
  • Ingår i: 2004 4th IEEE Conference on Nanotechnology. - 0780385365 ; , s. 199-200
  • Konferensbidrag (refereegranskat)abstract
    • In this paper, we present a status report on how implementation of nanoimprint lithography has advanced our research. Contact guidance nerve growth experiments have so far primarily been done on micrometer-structured surfaces. We have made a stamp with 17 areas of different, submicron, line width and spacing covering a total 2.6 mm
  •  
10.
  • Conache, Gabriela, et al. (författare)
  • Bias-controlled friction of InAs nanowires on a silicon nitride layer studied by atomic force microscopy
  • 2010
  • Ingår i: Physical Review B Condensed Matter. - College Park, Md. : American Physical Society. - 0163-1829 .- 1095-3795. ; 82:3
  • Tidskriftsartikel (refereegranskat)abstract
    • By studying how nanowires lying on a surface bend when pushed by an atomic force microscopy tip we are able to measure the friction between them and the substrate. Here, we show how the friction between InAs nanowires and an insulating silicon nitride layer varies when a dc voltage is applied to the tip during manipulation. The bias charges the capacitor formed by the wire and the grounded silicon back contact. Electrostatic forces increase the contact pressure and allow us to tune the friction between the wire and the silicon nitride surface. Using nanowires of about 40-70 nm diameter and a few microns in length we have applied biases in the range +12 to -12 V. A monotonic increase of the sliding friction with voltage was observed. This increase in friction with the normal force implies that the mesoscopic nanowire-surface system behaves like a macroscopic contact, despite the nanometer size of the contact in the direction of motion. The demonstrated bias-controlled friction has potential applications in MEMS/NEMS devices.
  •  
11.
  • Jain, Vishal, 1989-, et al. (författare)
  • A comparative study of nanowire based infrared p+-i-n+ photodetectors
  • 2012
  • Konferensbidrag (refereegranskat)abstract
    • We present a comparative study of electrical and optical properties of two types of p+-i-n+ photodetectors based on self-assembled ensembles of vertical InP nanowires (NWs) monolithically grown on InP. The detectors differ in the type of p+ contact, one detector geometry has p+-i-n+ segments integrated into the NWs (type A) while the other detector has i-n+ NW segments grown directly on a p+ substrate(type B). The samples were prepared by first depositing 80 nm Au nanoparticles on a p+ InP substrate using an aerosol technique and subsequently growing NWs using MOVPE. The NWs have a polytypecrystal structure of alternating wurtzite and zincblende segments. The processing of the detectors include deposition of SiO2, followed by an etching step to remove the oxide from the tip of the NWs, and finally sputtering of ITO on 1x1 mm2 device areas. The two most prominent differences between the detectors concern the current-voltage (I-V) characteristics and the spatial location of generated photocurrent. From spectrally resolved photocurrent measurements, we conclude that the photocurrent in detector type A is primarily generated in the NWs, whereas the photocurrent in type B detectors mainly stems from the substrate. Photogenerated carriers in the substrate diffuse to the NWs where they are effectively funnelled into the NWs. The I-V characteristics of the type A detector displays a non-trivial transport behaviour for forward biases, whereas type B shows excellent rectifying behavior with an ideality factor of about 2.5. We will discuss detailed analysis of the spectral fingerprints of the two detector types revealing the mixed crystal phase of the polytype NWs and bandstructure effects, temperature dependence of the I-V characteristics and typical photodetector parameters.
  •  
12.
  • Mårtensson, Thomas, et al. (författare)
  • Nanowire arrays - a toolbox for the future
  • 2004
  • Ingår i: Book of extended abstracts: 8th Intl Conf Nanoscale Sci Technol, Venice, Italy (2004).
  • Konferensbidrag (refereegranskat)
  •  
13.
  • Mårtensson, Thomas, et al. (författare)
  • Nanowire arrays defined by nanoimprint lithography
  • 2004
  • Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 4:4, s. 699-702
  • Tidskriftsartikel (refereegranskat)abstract
    • We demonstrate the use of nanoimprint lithography to define arrays of vertical InP nanowires. Each nanowire is individually seeded from a catalyzing gold particle and then grown via vapor-liquid-solid growth in a metal-organic vapor phase epitaxy system. The diameter and position of each nanowire can be controlled to create engineered arrays, demonstrated with a hexagonal photonic crystal pattern. This combination of nanoimprint and self-assembly of nanostructures is attractive for photonics and electronics, as well as in life sciences.
  •  
14.
  • Pettersson, Håkan, 1962-, et al. (författare)
  • Electrical and optical properties of InP nanowire ensemble p(+)-i-n(+) photodetectors
  • 2012
  • Ingår i: Nanotechnology. - Bristol, UK : Institute of Physics Publishing (IOPP). - 0957-4484 .- 1361-6528. ; 23:13
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on a comprehensive study of electrical and optical properties of efficient near-infrared p(+)-i-n(+) photodetectors based on large ensembles of self-assembled, vertically aligned i-n(+) InP nanowires monolithically grown on a common p(+) InP substrate without any buffer layer. The nanowires have a polytype modulated crystal structure of wurtzite and zinc blende. The electrical data display excellent rectifying behavior with an ideality factor of about 2.5 at 300 K. The ideality factor scales with 1/T, which possibly reflects deviations from classical transport models due to the mixed crystal phase of the nanowires. The observed dark leakage current is of the order of merely similar to 100 fA/nanowire at 1 V reverse bias. The detectors display a linear increase of the photocurrent with reverse bias up to about 10 pA/nanowire at 5 V. From spectrally resolved measurements, we conclude that the photocurrent is primarily generated by funneling photogenerated carriers from the substrate into the NWs. Contributions from direct excitation of the NWs become increasingly important at low temperatures. The photocurrent decreases with temperature with an activation energy of about 50 meV, which we discuss in terms of a temperature-dependent diffusion length in the substrate and perturbed transport through the mixed-phase nanowires. © 2012 IOP Publishing Ltd.
  •  
15.
  • Pettersson, Håkan, et al. (författare)
  • Photocurrent spectroscopy on self-assembled InAs quantum dots embedded in InP
  • 2005
  • Ingår i: Microelectronics Journal. - Amsterdam : Elsevier. - 0026-2692. ; 36:3-6, s. 227-230
  • Tidskriftsartikel (refereegranskat)abstract
    • In this work, we report on an overview of recent results from Fourier transform photocurrent (FTPC) measurements in the infrared spectral region on ensembles of self-assembled InAs quantum dots embedded in a matrix of InP. In interband PC, clear signals related to the dots are observed. Comparing the PC- and PL spectra, we observe that the fundamental transition is absent in the PC spectra, which we interpret in terms of Pauliblocking due to a filled electron ground state of the dots. Our results furthermore suggest that an Auger process is involved in forming the interband PC signal. In intersubband PC, peaks related to transitions from the dots' ground- and first excited states to the conduction band of the matrix are observed. Using a novel approach of combining FTPC with illumination from an additional external non-modulated light source, we have measured the spectral distribution of photoionization of excitons in quantum dots and found an exciton binding energy in good agreement with theoretical calculations.
  •  
16.
  •  
17.
  • Wernersson, Lars-Erik, et al. (författare)
  • Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes
  • 2002
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 80:10, s. 1841-1843
  • Tidskriftsartikel (refereegranskat)abstract
    • We have studied GaP/GaAs/GaP and GaAsxP1-x/GaAs/GaAsxP1-x double-barrier resonant tunnelling diodes grown by metalorganic vapor phase epitaxy. We find that GaP tensile strained barriers in GaP/GaAs/GaP diodes may be grown with a barrier thickness below the critical thickness of about 12 monolayers. However, a corrugation of the strained barrier is observed by transmission electron microscopy. This variation may explain the low peak-to-valley ratio of the diodes (about 2). In contrast, GaAsxP1-x/GaAs/GaAsxP1-x resonant tunnelling diodes have been grown with a homogeneous thickness of the barriers, consequently showing a substantially improved electrical performance compared to the GaP diodes with peak-to-valley ratios >5.
  •  
18.
  • Wernersson, Lars-Erik, et al. (författare)
  • Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodes
  • 2002
  • Ingår i: Applied Surface Science. - 1873-5584. ; 190:1, s. 252-257
  • Tidskriftsartikel (refereegranskat)abstract
    • We have studied the epitaxial growth and electrical performance of Al-free, GaAs-based, resonant tunnelling diodes (RTDs) including thin barriers of GaInP, GO, or GaAsxP1-x. n-Type tunnelling diodes have been fabricated and the symmetry in the current-voltage (I-V) characteristics, as well as the peak-to-valley ratios, are found to be sensitive probes for the inter-face quality in the heterostructures. For GaInP RTDs, we show that the introduction of Gap intermediate layers is crucial for the realisation. of a useful tunnelling current. RTDs including thin barriers (less than about 10 monolayers (ML)) of Gap are realised, but the strong mismatch between the materials limit the useful thickness. Finally, RTDs with GaAslambdaP1-x alloys are fabricated showing the best peak-to-valley ratio of the diodes (about 5), as well as a symmetric I-V characteristics. The electrical data are further compared to studies by transmission electron microscopy (TEM) in the various material systems.
  •  
19.
  •  
20.
  • Adolfsson, Karl, et al. (författare)
  • Fluorescent Nanowire Heterostructures as a Versatile Tool for Biology Applications
  • 2013
  • Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 13:10, s. 4728-4732
  • Tidskriftsartikel (refereegranskat)abstract
    • Nanowires are increasingly used in biology, as sensors, as injection devices, and us model systems for toxicity studies. Currently, in situ visualization of nanowires in biological media is done using organic dyes, which a;:e prone to photobleaching, or using microscopy methods which either yield poor resolution or require a sophisticated setup. Here we show that inherently fluorescent nanowire axial heterostructnies c:an be used to localize and identify nanowires in cells and tissue; By synthesizing GaP GaInP nanowire heterostructures, with nonfluorescent GaP segments and fluorescent GaInP segments, we created a barcode labeling system enabling the distinction of the nanowire morphological and chemical properties using fluorescence microscopy. The GaInP photoluminescence stability, combined with the fact that the nanowires can be coated with different materials while retaining their fluorescence, make these nanowires promising tools for biological and nanotoxicological studies.
  •  
21.
  •  
22.
  • Anttu, Nicklas, et al. (författare)
  • Absorption of light in InP nanowire arrays
  • 2014
  • Ingår i: Nano Reseach. - : Springer Science and Business Media LLC. - 1998-0124 .- 1998-0000. ; 7:6, s. 816-823
  • Tidskriftsartikel (refereegranskat)abstract
    • An understanding of the absorption of light is essential for efficient photovoltaic and photodetection applications with III-V nanowire arrays. Here, we correlate experiments with modeling and verify experimentally the predicted absorption of light in InP nanowire arrays for varying nanowire diameter and length. We find that 2,000 nm long nanowires in a pitch of 400 nm can absorb 94% of the incident light with energy above the band gap and, as a consequence, light which in a simple ray-optics description would be travelling between the nanowires can be efficiently absorbed by the nanowires. Our measurements demonstrate that the absorption for long nanowires is limited by insertion reflection losses when light is coupled from the air top-region into the array. These reflection losses can be reduced by introducing a smaller diameter to the nanowire-part closest to the air top-region. For nanowire arrays with such a nanowire morphology modulation, we find that the absorptance increases monotonously with increasing diameter of the rest of the nanowire.
  •  
23.
  • Anttu, Nicklas, et al. (författare)
  • Optical Far-Field Method with Subwavelength Accuracy for the Determination of Nanostructure Dimensions in Large-Area Samples.
  • 2013
  • Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 13:6, s. 2662-2667
  • Tidskriftsartikel (refereegranskat)abstract
    • The physical, chemical, and biological properties of nanostructures depend strongly on their geometrical dimensions. Here we present a fast, noninvasive, simple-to-perform, purely optical method that is capable of characterizing nanostructure dimensions over large areas with an accuracy comparable to that of scanning electron microscopy. This far-field method is based on the analysis of unique fingerprints in experimentally measured reflectance spectra using full three-dimensional optical modeling. We demonstrate the strength of our method on large-area (millimeter-sized) arrays of vertical InP nanowires, for which we simultaneously determine the diameter and length as well as cross-sample morphological variations thereof. Explicitly, the diameter is determined with an accuracy better than 10 nm and the length with an accuracy better than 30 nm. The method is versatile and robust, and we believe that it will provide a powerful and standardized measurement technique for large-area nanostructure arrays suitable for both research and industrial applications.
  •  
24.
  • Anttu, Nicklas, et al. (författare)
  • Reflection measurements to reveal the absorption in nanowire arrays
  • 2013
  • Ingår i: Optics Letters. - 0146-9592. ; 38:9, s. 1449-1451
  • Tidskriftsartikel (refereegranskat)abstract
    • The absorption of light is at the core of photovoltaic applications. For many nanostructure-based devices, an assessment of the absorption in the nanostructures is complicated by a thick, opaque substrate that prohibits transmission measurements. Here, we show how a single reflection measurement can be used for approximating the amount of light absorbed in vertical semiconductor nanowire arrays. (C) 2013 Optical Society of America
  •  
25.
  • Astromskas, Gvidas, et al. (författare)
  • Doping Incorporation in InAs nanowires characterized by capacitance measurements
  • 2010
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 108
  • Tidskriftsartikel (refereegranskat)abstract
    • Sn and Se doped InAs nanowires are characterized using a capacitance-voltage technique where the threshold voltages of nanowire capacitors with different diameter are determined and analyzed using an improved radial metal-insulator-semiconductor field-effect transistor model. This allows for a separation of doping in the core of the nanowire from the surface charge at the side facets of the nanowire. The data show that the doping level in the InAs nanowire can be controlled on the level between 2×1018 to 1×1019 cm−3, while the surface charge density exceeds 5×1012 cm−2 and is shown to increase with higher dopant precursor molar fraction.
  •  
26.
  • Astromskas, Gvidas, et al. (författare)
  • Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
  • 2011
  • Ingår i: Microelectronic Engineering. - : Elsevier BV. - 1873-5568 .- 0167-9317. ; 88:4, s. 444-447
  • Konferensbidrag (refereegranskat)abstract
    • InAs/HfO2 nanowire capacitors using capacitance-voltage (CV) measurements are investigated in the range of 10 kHz to 10 MHz. The capacitors are based on vertical nanowire arrays that are coated with an 8 nm-thick HfO2 layer by atomic layer deposition. CV characteristics are measured at temperatures in the range between -140 and 40 degrees C and the CV characteristics for nanowires with different Sn and Se n-type doping levels are compared. The comparison of the data at various doping levels points towards large number of traps for highly doped samples, caused by the preferential dopant precursor incorporation at the nanowire surface. We also evaluate the frequency dispersion of the accumulation capacitance and determine values below 2% with weak temperature dependence, indicating the existence of border traps in these nanowire capacitors. (C) 2010 Elsevier B.V. All rights reserved.
  •  
27.
  •  
28.
  • Berg, Alexander, et al. (författare)
  • Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching
  • 2014
  • Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 386, s. 47-51
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on the synthesis of non-tapered wurtzite (WZ) GaP nanowires by use of in-situ etching and the structural and optical characterization thereof. HCl was evaluated as an in-situ etchant in order to impede the onset of radial growth since the WZ crystal phase in GaP nanowires preferentially grows at relatively high growth temperatures around 600 degrees C, at which strong radial growth typically occurs. Transmission electron microscopy measurements confirmed non-tapered WZ GaP nanowires after growth. Photoluminescence characterization revealed defect related red emission, possibly related to transitions within the bandgap. Raman measurements show that the phonon energies in WZ GaP are very close in energy to the phonon energies in zinc blende GaP. (C) 2013 Elsevier B.V. All rights reserved.
  •  
29.
  •  
30.
  • Berg, Alexander, et al. (författare)
  • Radial Nanowire Light-Emitting Diodes in the (AlxGa1-x)yIn1-yP Material System
  • 2016
  • Ingår i: Nano letters (Print). - Washington, DC : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 16:1, s. 656-662
  • Tidskriftsartikel (refereegranskat)abstract
    • Nanowires have the potential to play an important role for next-generation light-emitting diodes. In this work, we present a growth scheme for radial nanowire quantum-well structures in the AlGaInP material system using a GaInP nanowire core as a template for radial growth with GaInP as the active layer for emission and AlGaInP as charge carrier barriers. The different layers were analyzed by X-ray diffraction to ensure lattice-matched radial structures. Furthermore, we evaluated the material composition and heterojunction interface sharpness by scanning transmission electron microscopy energy dispersive X-ray spectroscopy. The electro-optical properties were investigated by injection luminescence measurements. The presented results can be a valuable track toward radial nanowire light-emitting diodes in the AlGaInP material system in the red/orange/yellow color spectrum. © 2015 American Chemical Society.
  •  
31.
  • Bi, Zhaoxia, et al. (författare)
  • InN quantum dots on GaN nanowires grown by MOVPE
  • 2014
  • Ingår i: physica status solidi (c). - : Wiley. - 1862-6351 .- 1610-1642 .- 1610-1634. ; 11, s. 421-424
  • Tidskriftsartikel (refereegranskat)abstract
    • In this work, growth of InN quantum dots (QDs) on GaN nanowires (NWs) by metal-organic vapour phase epitaxy is demonstrated, illustrating the feasibility to combine 0D and 1D structures for nitride semiconductors. Selective area growth was used to generate arrays of c-oriented GaN NWs using Si3N4 as the mask material. In general, InN QDs tend to form at the NW edges between the m-plane side facets, but the QD growth can also be tuned to the side facets by controlling the growth temperature and the growth rate. TEM characterization reveals that I1-type stacking faults are formed in the QDs and originate from the misfit dislocations at the InN/GaN interface. Photoluminescence measurement at 4 K shows that the peak shifts to high energy with reduced dot size. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
  •  
32.
  •  
33.
  • Bi, Zhaoxia, et al. (författare)
  • Self-assembled InN quantum dots on side facets of GaN nanowires
  • 2018
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 123:16
  • Tidskriftsartikel (refereegranskat)abstract
    • Self-assembled, atomic diffusion controlled growth of InN quantum dots was realized on the side facets of dislocation-free and c-oriented GaN nanowires having a hexagonal cross-section. The nanowires were synthesized by selective area metal organic vapor phase epitaxy. A 3 Å thick InN wetting layer was observed after growth, on top of which the InN quantum dots formed, indicating self-assembly in the Stranski-Krastanow growth mode. We found that the InN quantum dots can be tuned to nucleate either preferentially at the edges between GaN nanowire side facets, or directly on the side facets by tuning the adatom migration by controlling the precursor supersaturation and growth temperature. Structural characterization by transmission electron microscopy and reciprocal space mapping show that the InN quantum dots are close to be fully relaxed (residual strain below 1%) and that the c-planes of the InN quantum dots are tilted with respect to the GaN core. The strain relaxes mainly by the formation of misfit dislocations, observed with a periodicity of 3.2 nm at the InN and GaN hetero-interface. The misfit dislocations introduce I1 type stacking faults (...ABABCBC...) in the InN quantum dots. Photoluminescence investigations of the InN quantum dots show that the emissions shift to higher energy with reduced quantum dot size, which we attribute to increased quantum confinement.
  •  
34.
  •  
35.
  • Borgström, Anna, et al. (författare)
  • Wetlands as a potential multifunctioning tool to mitigate eutrophication and brownification
  • 2024
  • Ingår i: Ecological Applications. - 1051-0761 .- 1939-5582.
  • Tidskriftsartikel (refereegranskat)abstract
    • Eutrophication and brownification are ongoing environmental problems affecting aquatic ecosystems. Due to anthropogenic changes, increasing amounts of organic and inorganic compounds are entering aquatic systems from surrounding catchment areas, increasing both nutrients, total organic carbon (TOC), and water color with societal, as well as ecological consequences. Several studies have focused on the ability of wetlands to reduce nutrients, whereas data on their potential to reduce TOC and water color are scarce. Here we evaluate wetlands as a potential multifunctional tool for mitigating both eutrophication and brownification. Therefore, we performed a study for 18 months in nine wetlands allowing us to estimate the reduction in concentrations of total nitrogen (TN), total phosphorus (TP), TOC and water color. We show that wetland reduction efficiency with respect to these variables was generally higher during summer, but many of the wetlands were also efficient during winter. We also show that some, but not all, wetlands have the potential to reduce TOC, water color and nutrients simultaneously. However, the generalist wetlands that reduced all four parameters were less efficient in reducing each of them than the specialist wetlands that only reduced one or two parameters. In a broader context, generalist wetlands have the potential to function as multifunctional tools to mitigate both eutrophication and brownification of aquatic systems. However, further research is needed to assess the design of the generalist wetlands and to investigate the potential of using several specialist wetlands in the same catchment.
  •  
36.
  •  
37.
  • Borgström, Benedikte, 1968, et al. (författare)
  • A rythmanalytic approach to understand the problematic nature of supply chain integration: The case of a customer ordered production strategy
  • 2011
  • Ingår i: the 27th IMP conference.
  • Konferensbidrag (refereegranskat)abstract
    • Implementing a customer ordered production strategy involves changes in supply chain integration compared to if production was based on forecasts of demand. In a study of Volvo Cars’ customer ordered strategy it was found that the degree of implementation changed over time, especially in relation to business cycles. It seems, with reference to statements made by respondents involved in practice at different stages in the supply chain, that there exists different “world views” and logics of action depending of the actors’ position in the chain: A business logic downstream and an industrial logic upstream from the assembler (Volvo Cars split in “manufacturing” and “sales”). Time, space and energy are different in the logics. Transport providers adapt and coordinate activities with logic of their own .To understand time, space and energy we refer to the ideas put forward by Lefebvre on rhythm in everyday life. It is important to be aware of ongoing changes in the everydayness for supply chain integration knowledge. Integration needs to be handled as a process, it is not given by plans and procedures as state.We interpret the empirical findings by applying Lefebvre’s conceptual framework. The approach facilitates a better understanding of the supply chain integration process and potentialities of temporal alignment.
  •  
38.
  • Borgström, Eric, 1982- (författare)
  • Skrivbedömning : om uppgifter, texter och bedömningsanvisningar i svenskämnets nationella prov
  • 2014
  • Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
    • The main purpose of this dissertation, and the four studies it includes, is to investigate some ways in which the concept of writing ability is rendered concrete in different national writing tests. The dissertation combines two theoretical approaches. Assessment theory serves as a framework for the approach to national tests. Tests are understood as a practice aiming at providing evidence for the inferences teachers need to draw about students’ writing ability, in order to make decisions that are part of school practice, such as giving grades. I examine the tests from the perspective of an anthropological theory of text that takes dialogism as its point of departure and views texts as culturally valued utterances. The analyses focus on the relations between writing task, students’ texts and assessment criteria, and how these can be both in alignment and in conflict with the claims on score meaning made by different test constructions.In the first study, four students’ texts from the national writing test in upper secondary school are closely analyzed to show how a writing task regulates students’ scope for action in their texts as regards global inner structure and perspective on content. The second study investigates how a national writing test was carried out in two classrooms in primary school, and highlights the relations between the task, students’ texts and assessment criteria. In the third study, I argue that a pursuit of reliability in writing tests becomes misguided unless it takes as its starting point the definition of writing ability the tests are made to measure. In the fourth study I examine the writing tasks of the tests in upper secondary school from 2007–2012. The analysis brings four distinct and recurrent task types to the fore, from which a reconstruction of the target domain of writing within the school subject of Swedish is made.Overall, the dissertation contributes to critical reflection on the understandings of writing expressed by test constructions, and points at possible further development of writing tests, given the theoretical perspective on writing that the dissertation employs.
  •  
39.
  •  
40.
  •  
41.
  •  
42.
  • Borgström, Henrik, 1975, et al. (författare)
  • Optimising grey iron powder compacts
  • 2009
  • Ingår i: Powder Metallurgy. - 0032-5899 .- 1743-2901. ; 52:4, s. 291-297
  • Tidskriftsartikel (refereegranskat)abstract
    • The grey iron microstructure Fe–2C–2Si powder based compact is tailored by different kinds of in situ and post sintering processing. This has been achieved by combining thermodynamic and kinetics modelling of microstructure development with sintering and controlled heat treatment experiments of tensile test specimens die compacted at 600 MPa. Applying optimised sintering conditions led to a grey iron like microstructure with 95% relative sintered density. Sinter hardening the compacts led to 500 MPa in yield strength and 600 MPa in ultimate tensile strength in combination with ductile fracture. Quenched and tempered condition showed the same strength values, but combined with brittle fracture due to martensitic structure. Pore rounding and partial pore filling by graphite were obtained by austenising isothermal hold during the cooling of the sintering cycle.
  •  
43.
  • Borgström, Henrik, 1975, et al. (författare)
  • Possibilities and constraints of implementing starch consolidated high speed steel in prototyping
  • 2008
  • Ingår i: Materials Science & Engineering. - : Elsevier BV. - 0921-5093 .- 1873-4936. ; 475:1-2, s. 34-38
  • Tidskriftsartikel (refereegranskat)abstract
    • In the starch consolidation (SC) process, a water-based slurry containing powder, starch, dispersant and thickener is used to fabricate near net-shape green bodies that are de-binded and further consolidated by sintering. In this study, gas atomized M3/2 as well as high and low carbon V-rich M4 type high speed steel powder (<150 mu m) are considered, Both material types undergo high volumetric shrinkage during super-solidus liquid phase sintering enabling them to reach near full density. The analyses and the review cover different process aspects like: recipe optimisation, post-gelatinization drying, de-binding and sintering. A SC recipe consisting of 58 vol.% powder, 3 vol.% starch, 1 vol.% dispersant and a thickener solution resulted in a density of >98% than what is theoretically stated after sintering. It is found that the success of the post-gelatinization drying procedure depends on the smoothness of mould material and controlling powder oxidation. The best combination was freeze drying the slurry in a silicon rubber mould. For V-rich alloys a total or partial control of eutectic carbides in the final microstructure could be realized for vacuum and nitrogen sintering atmospheres, respectively.
  •  
44.
  •  
45.
  • Borgström, Henrik, 1975, et al. (författare)
  • Tailoring the surface microstructure of starch consolidated vanadium-rich high speed steel powder
  • 2008
  • Ingår i: European International Powder Metallurgy Congress and Exhibition, Euro PM 2008; Mannheim; Germany; 29 September 2008 through 1 October 2008. - 9781899072033 ; 3, s. 289-294
  • Konferensbidrag (refereegranskat)abstract
    • The nitrogen sintering of vanadium rich high speed steel has been applied for tailoring of surface microstructure. The approach has been facilitated by thermodynamics modelling of phase equilibria, novel shaping methods like starch consolidation and various manipulations of the sintering atmosphere. It is demonstrated that elevated nitrogen sintering densification occurs when an open pore structure interacts with nitrogen slightly below the nitrogen-reduced solidus temperature. The compact can then first be pre-sintered to around 85% relative density in vacuum, and thereafter be infiltrated with nitrogen at the nitrogen-reduced solidus temperature and finally be sintered to near full density at a temperature of 10% liquid phase formation in nitrogen. The end result is a microstructure with an elevated MX transformation in the surface, whose depth depends on the carbon balance of the material.
  •  
46.
  • Borgström, Henrik, 1975, et al. (författare)
  • Visualizing shear bands in 3-D using axisymmetric sample: An experimental study
  • 2017
  • Ingår i: Journal of King Saud University, Engineering Sciences. - : Elsevier BV. - 1018-3639. ; 29:3, s. 264-268
  • Tidskriftsartikel (refereegranskat)abstract
    • In this study a qualitative description of the occurrence of shear bands produced by a sudden impact on an axisymmetric specimen made of medium carbon steel 0.45% C is given. A simple experiment was developed aimed at producing a pinch shear stress in the front side of the test sample in order to visualize shear bands in 3-D. Curve fitting using MATLAB was employed based on the points taken from the images of the front section of the test sample. The predictions of the curve fitting suggests a hyperbolic section leading to the conclusion that within the sample there is a double cone region of material where the shear band region is located on its outer surface. The formation of the shear band is explained by the fact that the interaction of the stress wave front with the free surface of the test sample produces reflection waves that attenuate the incoming stress wave inwards leading to a stress gradient in the plane of the front side of the specimen that causes shear localization. Also, the progressively increasing cross sectional area of the test sample causes the expansion of the wave front, which also results in a stress gradient in the normal direction of the front side of the specimen. So the formation of shear bands depends not only on the impact momentum and strain rates but also on the sample's geometry. © 2015 The Authors
  •  
47.
  •  
48.
  • Borgström, Magnus, et al. (författare)
  • Dynamics of extremely anisotropic etching of InP nanowires by HCl
  • 2011
  • Ingår i: Chemical Physics Letters. - : Elsevier BV. - 0009-2614. ; 502:4-6, s. 222-224
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on the dynamics of in situ etching of nanowires using an etching agent which allows for parameter optimization for nanowire synthesis without concerns of tapering issues. Upon etching of InP nanowires using HCl it is found that HCl mainly reacts with the precursor TMI, its decomposition species, and physisorbed In. The reaction with solid InP is less rapid and diffusion limited. We find a gas-phase etch process which is metal assisted and has a high aspect ratio of 1:100. (C) 2011 Elsevier B.V. All rights reserved.
  •  
49.
  • Borgström, Magnus, et al. (författare)
  • Fabrication and characterization of AlP-GaP core-shell nanowires
  • 2011
  • Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 324:1, s. 290-295
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on the particle assisted synthesis of core-shell AlP-GaP nanowires by use of metal-organic vapor phase epitaxy. The core-shell approach is chosen such as to stabilize the AlP which is highly sensitive to water. The nanowires were investigated by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and Raman spectroscopy. These nanowires have an indirect band-gap and form a type II staggered heterojunction. By designed capping of the AlP cores by GaP, we find the nanowires to be stable for more than a year. (C) 2011 Elsevier B.V. All rights reserved.
  •  
50.
  • Borgström, Magnus, et al. (författare)
  • In Situ Etching for Total Control Over Axial and Radial Nanowire Growth
  • 2010
  • Ingår i: Nano Reseach. - : Springer Science and Business Media LLC. - 1998-0124 .- 1998-0000. ; 3:4, s. 264-270
  • Tidskriftsartikel (refereegranskat)abstract
    • We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway, independent of other growth parameters. Thereby a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial growth. We demonstrate the method using etching by HCl during InP nanowire growth. The improved crystal quality of etched nanowires is indicated by strongly enhanced photoluminescence as compared to reference nanowires obtained without etching.
  •  
Skapa referenser, mejla, bekava och länka
  • Resultat 1-50 av 186
Typ av publikation
tidskriftsartikel (123)
konferensbidrag (52)
doktorsavhandling (3)
licentiatavhandling (3)
rapport (2)
forskningsöversikt (2)
visa fler...
bokkapitel (1)
visa färre...
Typ av innehåll
refereegranskat (166)
övrigt vetenskapligt/konstnärligt (17)
populärvet., debatt m.m. (3)
Författare/redaktör
Samuelson, Lars (128)
Borgström, Magnus (118)
Wallentin, Jesper (39)
Heurlin, Magnus (34)
Seifert, Werner (27)
Deppert, Knut (26)
visa fler...
Pettersson, Håkan, 1 ... (18)
Wallenberg, Reine (17)
Gustafsson, Anders (17)
Borgström, Magnus T. (17)
Storm, Kristian (17)
Pistol, Mats Erik (15)
Lindgren, David (15)
Mikkelsen, Anders (15)
Ek, Martin (14)
Wernersson, Lars-Eri ... (13)
Pettersson, Håkan (12)
Thelander, Claes (12)
Lundgren, Edvin (10)
Jain, Vishal, 1989- (10)
Anttu, Nicklas (9)
Nyborg, Lars, 1958 (9)
Mergenthaler, Kilian (9)
Nowzari, Ali (9)
Berg, Alexander (8)
Mårtensson, Thomas (8)
Dick Thelander, Kimb ... (8)
Ouattara, Lassana (8)
Capasso, Federico (7)
Hultin, Olof (7)
Sass, T (7)
Borgström, Lars (7)
Johansson, Jonas (6)
Karimi, Mohammad (6)
Barrigón, Enrique (6)
Magnusson, Martin (5)
Andersen, Jesper N (5)
Nylund, Gustav (5)
Bryllert, Tomas (5)
Zeng, Xulu (5)
Otnes, Gaute (5)
Weber, Tjark (5)
Messing, Maria (5)
Eriksson, Lars-Henri ... (5)
Timm, Rainer (5)
Parrow, Joachim (5)
Borgström, Johannes (5)
Ohlsson, Jonas (5)
Hjort, Martin (5)
Sköld, Niklas (5)
visa färre...
Lärosäte
Lunds universitet (146)
Högskolan i Halmstad (31)
Chalmers tekniska högskola (14)
Uppsala universitet (10)
Karolinska Institutet (7)
Göteborgs universitet (6)
visa fler...
Umeå universitet (5)
Linköpings universitet (4)
RISE (4)
Stockholms universitet (2)
Högskolan Dalarna (2)
Kungliga Tekniska Högskolan (1)
Luleå tekniska universitet (1)
Högskolan i Gävle (1)
Örebro universitet (1)
Jönköping University (1)
Malmö universitet (1)
Handelshögskolan i Stockholm (1)
Linnéuniversitetet (1)
Karlstads universitet (1)
visa färre...
Språk
Engelska (177)
Svenska (8)
Latin (1)
Forskningsämne (UKÄ/SCB)
Naturvetenskap (121)
Teknik (96)
Medicin och hälsovetenskap (21)
Samhällsvetenskap (4)
Humaniora (1)

År

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Stäng

Kopiera och spara länken för att återkomma till aktuell vy