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- Ghaemi, M., et al.
(författare)
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Growth of Nb films on Cu for superconducting radio frequency cavities by direct current and high power impulse magnetron sputtering: A molecular dynamics and experimental study
- 2024
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Ingår i: Surface & Coatings Technology. - : Elsevier BV. - 0257-8972 .- 1879-3347. ; 476
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Tidskriftsartikel (refereegranskat)abstract
- The use of superconducting radio frequency (rf) cavities in particle accelerators necessitates that copper (Cu) surfaces are coated by thin niobium (Nb) films, predominantly synthesized by magnetron sputtering. A key feature of the rf cavities is that they exhibit a complex three-dimensional geometry, such that during Nb film growth vapor is not deposited on a flat substrate. The latter, combined with the line-of-sight nature of the deposition flux in conventional magnetron sputtering methods (including direct current magnetron sputtering; DCMS) yields films with porous columnar morphologies on surfaces of the cavities that do not face the magnetron source. High-power impulse magnetron sputtering (HiPIMS) is a variant of sputtering that generates highly-ionized fluxes. Using electrical fields, such fluxes can be deflected to trajectories that are closer to the substrate normal and, thereby, dense and uniform layers can be deposited on all surfaces of the rf cavities. In the present work, we use classical molecular dynamics simulations to model Nb film growth on Cu substrates at conditions consistent with those prevailing during DCMS and HiPIMS. Our computational results are in qualitative agreement with experimental data (also generated in the present study), with respect to film morphology. Based on this agreement and by studying the evolution of the simulated systems, we suggest that the morphology of HiPIMS-grown films (as compared to their DCMS counterparts) is the result of the combined effects of deflection of ionized sputtered particles to trajectories parallel to the substrate normal, bombardment-induced interruption of crystal growth, and ballistic atomic rearrangement along with dynamic thermal annealing caused by energetic film-forming species. Moreover, the predictions of our model with respect to dynamic processes at the film-substrate interface and their effect on local epitaxial growth are discussed.
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- Lopez-Cazalilla, A., et al.
(författare)
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Effect of surface orientation on blistering of copper under high fluence keV hydrogen ion irradiation
- 2024
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Ingår i: Acta Materialia. - : Elsevier BV. - 1359-6454 .- 1873-2453. ; 266
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Tidskriftsartikel (refereegranskat)abstract
- Copper and hydrogen are among the most common elements that are widely used in industrial and fundamental research applications. Copper surfaces are often exposed to hydrogen in the form of charged ions. The hydrogen ions can accelerate towards the surface, resulting in an accumulation of hydrogen below the surface. Harmless in low concentrations, prolonged hydrogen exposure can lead to dramatic changes on copper surfaces. This effect is visible to the naked eye in the form of blisters densely covering the exposed surface. Blisters are structural modifications that can affect the physical properties of the surface including, for example, vacuum dielectric strength. Using scanning electron microscopy we found that the blistering of the irradiated polycrystalline copper surface does not grow uniformly with ion fluence. Initially, only some grains exhibit blisters, while others remain intact. Our experiments indicate that grains with the {100} orientation are the most prone to blistering, while the grains oriented in the {110} are the most resistant to it. Moreover, we noticed that blisters assume different shapes correlating with specific grain orientation. Good agreement of experiments with the atomistic simulations explains the difference in the shapes of the blisters by specific behavior of dislocations within the FCC crystal structure. Moreover, our simulations reveal the correlation of the delay in blister formation on surfaces with certain orientations compared to the others with the dependence of the hydrogen penetration depth and the depth and amount of vacancies in copper on the orientation of the irradiated surface.
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