| 1. |
- Shegai, Timur, 1982, et al.
(författare)
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A bimetallic nanoantenna for directional colour routing
- 2011
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Ingår i: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723 .- 2041-1723. ; 2:1
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Tidskriftsartikel (refereegranskat)abstract
- Recent progress in nanophotonics includes demonstrations of meta-materials displaying negative refraction at optical frequencies, directional single photon sources, plasmonic analogies of electromagnetically induced transparency and spectacular Fano resonances. The physics behind these intriguing effects is to a large extent governed by the same single parameter-optical phase. Here we describe a nanophotonic structure built from pairs of closely spaced gold and silver disks that show phase accumulation through material-dependent plasmon resonances. The bimetallic dimers show exotic optical properties, in particular scattering of red and blue light in opposite directions, in spite of being as compact as similar to lambda(3)/100. These spectral and spatial photon-sorting nanodevices can be fabricated on a wafer scale and offer a versatile platform for manipulating optical response through polarization, choice of materials and geometrical parameters, thereby opening possibilities for a wide range of practical applications.
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| 2. |
- Chen, Xi, et al.
(författare)
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Device noise reduction for Silicon nanowire field-effect-transistor based sensors by using a Schottky junction gate
- 2019
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Ingår i: ACS Sensors. - : American Chemical Society (ACS). - 2379-3694. ; 4:2, s. 427-433
-
Tidskriftsartikel (refereegranskat)abstract
- The sensitivity of metal-oxide-semiconductor field-effect transistor (MOSFET) based nanoscale sensors is ultimately limited by noise induced by carrier trapping/detrapping processes at the gate oxide/semiconductor interfaces. We have designed a Schottky junction gated silicon nanowire field-effect transistor (SiNW-SJGFET) sensor, where the Schottky junction replaces the noisy oxide/semiconductor interface. Our sensor exhibits significantly reduced noise, 2.1×10-9 V2µm2/Hz at 1 Hz, compared to reference devices with the oxide/semiconductor interface operated at both inversion and depletion modes. Further improvement can be anticipated by wrapping the nanowire by such a Schottky junction thereby eliminating all oxide/semiconductor interfaces. Hence, a combination of the low-noise SiNW-SJGFET sensor device with a sensing surface of the Nernstian response limit holds promises for future high signal-to-noise ratio sensor applications.
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| 3. |
- Chen, Xi, et al.
(författare)
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Low-Noise Schottky Junction Trigate Silicon Nanowire Field-effect Transistor for Charge Sensing
- 2019
-
Ingår i: IEEE Transactions on Electron Devices. - 0018-9383 .- 1557-9646. ; 66:9, s. 3994-4000
-
Tidskriftsartikel (refereegranskat)abstract
- Silicon nanowire (SiNW) field-effect transistors (SiNWFETs) are of great potential as a high-sensitivity charge sensor. The signal-to-noise ratio (SNR) of an SiNWFET sensor is ultimately limited by the intrinsic device noise generated by carrier trapping/detrapping processes at the gate oxide/silicon interface. This carrier trapping/detrapping-induced noise can be significantly reduced by replacing the noisy oxide/silicon interface with a Schottky junction gate (SJG) on the top of the SiNW. In this paper, we present a tri-SJG SiNWFET (Tri-SJGFET) with the SJG formed on both the top surface and the two sidewalls of the SiNW so as to enhance the gate control over the SiNW channel. Both experiment and simulation confirm that the additional sidewall gates in a narrow Tri-SJGFET indeed can confine the conduction path within the bulk of the SiNW channel away from the interfaces and significantly improve the immunity to the traps at the bottom buried oxide/silicon interface. Therefore, the optimal low-frequency noise performance can be achieved without the need for any substrate bias. This new gating structure holds promises for further development of robust SiNWFET-based charge sensors with low noise and low operation voltage.
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| 4. |
- Chen, Xi, et al.
(författare)
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Multiplexed analysis of molecular and elemental ions using nanowire transistor sensors
- 2018
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Ingår i: Sensors and actuators. B, Chemical. - : Elsevier BV. - 0925-4005 .- 1873-3077. ; 270, s. 89-96
-
Tidskriftsartikel (refereegranskat)abstract
- An integrated sensor chip with silicon nanowire ion-sensitive field-effect transistors for simultaneous and selective detection of both molecular and elemental ions in a single sample solution is demonstrated. The sensing selectivity is realized by functionalizing the sensor surface with tailor-made mixed-matrix membranes (MMM) incorporated with specific ionophores for the target ions. A biomimetic container molecule, named metal-organic supercontainer (MOSC), is selected as the ionophore for detection of methylene blue (MB+), a molecular ion, while a commercially available Na-ionophore is used for Na+, an elemental ion. The sensors show a near-Nernstian response with 56.4 ± 1.8 mV/dec down to a concentration limit of ∌1 ΌM for MB+ and 57.9 ± 0.7 mV/dec down to ∌60 ΌM for Na+, both with excellent reproducibility. Extensive control experiments on the MB+ sensor lead to identification of the critical role of the MOSC molecules in achieving a stable and reproducible potentiometric response. Moreover, the MB+-specific sensor shows remarkable selectivity against common interfering elemental ions in physiological samples, e.g., H+, Na+, and K+. Although the Na+-specific sensor is currently characterized by insufficient immunity to the interference by MB+, the root cause is identified and remedies generally applicable for hydrophobic molecular ions are discussed. River water experiments are also conducted to prove the efficacy of our sensors.
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| 5. |
- Chen, Xi
(författare)
-
Silicon Nanowire Field-Effect Devices as Low-Noise Sensors
- 2019
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- In the past decades, silicon nanowire field-effect transistors (SiNWFETs) have been explored for label-free, highly sensitive, and real-time detections of chemical and biological species. The SiNWFETs are anticipated for sensing analyte at ultralow concentrations, even at single-molecule level, owing to their significantly improved charge sensitivity over large-area FETs. In a SiNWFET sensor, a change in electrical potential associated with biomolecular interactions in close proximity to the SiNW gate terminal can effectively control the underlying channel and modulate the drain-to-source current (IDS) of the SiNWFET. A readout signal is therefore generated. This signal is primarily determined by the surface properties of the sensing layer on the gate terminal, with sensitivity close up to the Nernstian limit widely demonstrated. To achieve a high signal-to-noise ratio (SNR), it is essential for the SiNWFETs to possess low noise of which intrinsic device noise is one of the major components. In metal-oxide-semiconductor (MOS)-type FETs, the intrinsic noise mainly results from carrier trapping/detrapping at the gate oxide/semiconductor interface and it is inversely proportional to the device area.This thesis presents a comprehensive study on design, fabrication, and noise reduction of SiNWFET-based sensors on silicon-on-oxide (SOI) substrate. A novel Schottky junction gated SiNWFET (SJGFET) is designed and experimentally demonstrated for low noise applications. Firstly, a robust process employing photo- and electron-beam mixed-lithography was developed to reliably produce sub-10 nm SiNW structures for SiNWFET fabrication. For a proof-of-concept demonstration, MOS-type SiNWFET sensors were fabricated and applied for multiplexed ion detection using ionophore-doped mixed-matrix membranes as sensing layers. To address the fundamental noise issue of the MOS-type SiNWFETs, SJGFETs were fabricated with a Schottky (PtSi/silicon) junction gate on the top surface of the SiNW channel, replacing the noisy gate oxide/silicon interface in the MOS-type SiNWFETs. The resultant SJGFETs exhibited a close-to-ideal gate coupling efficiency (60 mV/dec) and significantly reduced device noise compared to reference MOS-type SiNWFETs. Further optimization was performed by implementing a three-dimensional Schottky junction gate wrapping both top surface and two sidewalls of the SiNW channel. The tri-gate SJGFETs with optimized geometry exhibited significantly enhanced electrostatic control over the channel, thereby confined IDS in the SiNW bulk, which greatly improved the device noise immunity to the traps at bottom buried oxide/silicon interface. Finally, a lateral bipolar junction transistor (LBJT) was also designed and fabricated on a SOI substrate aiming for immediate sensor current amplification. Integrating SJGFETs with LBJTs is expected to significantly suppress environmental interference and improve the overall SNR especially under low sensor current situations.
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| 6. |
- Chen, Xi, et al.
(författare)
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Top-bottom gate coupling effect on low frequency noise in a Schottky junction gated silicon nanowire field-effect transistor
- 2019
-
Ingår i: IEEE Journal of the Electron Devices Society. - 2168-6734. ; 7, s. 696-700
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Tidskriftsartikel (refereegranskat)abstract
- In this letter, strong low frequency noise (LFN) reduction is observed when the buried oxide (BOX)/silicon interface of a Schottky junction gated silicon nanowire field-effect transistor (SJGFET) is depleted by a substrate bias. Such LFN reduction is mainly attributed to the dramatic reduction in Coulomb scattering when carriers are pushed away from the interface. The BOX/silicon interface depletion can also be achieved by sidewall Schottky junction gates in a narrow channel SJGFET, leading to an optimal LFN performance without the need of any substrate bias.
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| 7. |
- Hu, Qitao, et al.
(författare)
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Current gain and low-frequency noise of symmetric lateral bipolar junction transistors on SOI
- 2018
-
Ingår i: 2018 48th European Solid-State Device Research Conference (ESSDERC). - 9781538654019 - 9781538654002 - 9781538654026 ; , s. 258-261
-
Konferensbidrag (refereegranskat)abstract
- This paper presents a comprehensive study of symmetric lateral bipolar junction transistors (LBJTs) fabricated on SOI substrate using a CMOS-compatible process; LBJTs find many applications including being a local signal amplifier for silicon-nanowire sensors. Our LBJTs are characterized by a peak gain (β) over 50 and low-frequency noise two orders of magnitude lower than what typically is of the SiO 2 /Si interface for a MOSFET. β is found to decrease at low base current due to recombination in the space charge region at the emitter-base junction and at the surrounding SiO 2 /Si interfaces. This decrease can be mitigated by properly biasing the substrate.
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| 8. |
- Tseng, Chiao-Wei, et al.
(författare)
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Synergy of Ionic and Dipolar Effects by Molecular Design for pH Sensing beyond the Nernstian Limit
- 2020
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Ingår i: Advanced Science. - : Wiley. - 2198-3844. ; 7:2
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Tidskriftsartikel (refereegranskat)abstract
- Knowledge of interfacial interactions between analytes and functionalized sensor surfaces, from where the signal originates, is key to the development and application of electronic sensors. The present work explores the tunability of pH sensitivity by the synergy of surface charge and molecular dipole moment induced by interfacial proton interactions. This synergy is demonstrated on a silicon‐nanoribbon field‐effect transistor (SiNR‐FET) by functionalizing the sensor surface with properly designed chromophore molecules. The chromophore molecules can interact with protons and lead to appreciable changes in interface dipole moment as well as in surface charge state. In addition, the dipole moment can be tuned not only by the substituent on the chromophore but also by the anion in the electrolyte interacting with the protonated chromophore. By designing surface molecules to enhance the surface dipole moment upon protonation, an above‐Nernstian pH sensitivity is achieved on the SiNR‐FET sensor. This finding may bring an innovative strategy for tailoring the sensitivity of the SiNR‐FET‐based pH sensor toward a wide range of applications.
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| 9. |
- Zeng, Shuangshuang, et al.
(författare)
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Controlled size reduction and its underlying mechanism to form solid-state nanopores via electron beam induced carbon deposition
- 2019
-
Ingår i: Nanotechnology. - : IOP PUBLISHING LTD. - 0957-4484 .- 1361-6528. ; 30:45
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Tidskriftsartikel (refereegranskat)abstract
- Solid-state nanopores have drawn considerable attention for their potential applications in DNA sequencing and nanoparticle analysis. However, fabrication of nanopores, especially those of diameter below 30 nm, requires sophisticated techniques. Here, a versatile method to controllably reduce the diameter of prefabricated large-size pores down to sub-30 nm without greatly increasing the effective pore depth from the original membrane thickness is shown. This method exploits carbon deposition achieved via hydrocarbon evaporation, induced by an incident beam of electrons, and subsequent dissociation of hydrocarbon to solid carbon deposits. The carbon deposition employs a conventional scanning electron microscope equipped with direct visual feedback, along with a stable hydrocarbon source nearby the sample. This work systematically studies how electron beam accelerating voltage, imaging magnification, initial pore size and membrane composition affect the process of pore size reduction. Secondary electrons generated in the membrane material are confirmed to be the main cause of the dissociation of hydrocarbon. Thicker carbon deposited on one side than on the other of the membrane results in an asymmetric nanopore shape and a rectifying ionic transport. A physico-phenomenological model combined with Monte Carlo simulations is proposed to account for the observed carbon deposition behaviors.
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| 10. |
- Chen, Si, 1982-, et al.
(författare)
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Contacting versus Insulated Gate Electrode for Si Nanoribbon Field-Effect Sensors Operating in Electrolyte
- 2011
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Ingår i: Analytical Chemistry. - : American Chemical Society (ACS). - 0003-2700 .- 1520-6882. ; 83:24, s. 9546-9551
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Tidskriftsartikel (refereegranskat)abstract
- Electric response to pH variations is employed to investigate Si nanoribbon field-effect transistors (SiNRFETs) operating in electrolyte with different gate configurations. For devices with a concluding gate electrode for direct metal electrolyte contact, a well-defined electrode reaction leading to a stable electrode potential is essential for retaining a stable electrical potential of the electrolyte. However, noble metals such as Pt do not meet the stability requirement and consequently bring severe distortions to the electronic response. For devices with an insulated gate electrode relying on the principle of capacitive gate coupling, the capacitance between the gate electrode and the electrolyte should be made much larger than the gate capacitance established between the SiNR and the electrolyte. In this case, an efficient gate control as well as a high stability against external disturbances can be ensured. Further studies show that surface charging of the gate insulator is the main cause responsible for the pH response of the SiNRFETs. Hence, devices with different gate configurations give rise to a comparable pH sensitivity.
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| 11. |
- Chen, Si, 1982-, et al.
(författare)
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Current gain enhancement for silicon-on-insulator lateral bipolar junction transistors operating at liquid-helium temperature
- 2020
-
Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 41:6, s. 800-803
-
Tidskriftsartikel (refereegranskat)abstract
- Conventional homojunction bipolar junction transistors (BJTs) are not suitable for cryogenic operation due to heavy doping-induced emitter band-gap narrowing and strong degradation in current gain (β) at low temperature. In this letter, we show that, on lateral version of the BJTs (LBJTs) fabricated on silicon-on-insulator (SOI) substrate, such β degradation can be mitigated by applying a substrate bias (V sub ), and a β over unity is achieved in a base current (I B ) range over 5 orders of magnitudes at 4.2 K, with a peak β ~ 100 demonstrated. The β improvement is explained by the enhanced electron tunneling through base region as a result of base barrier lowering and thinning by a positive Vsub, which leads to dramatic increase of collector current (IC) while IB is negligibly affected.
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| 12. |
- Chen, Si, 1982-
(författare)
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Electronic Sensors Based on Nanostructured Field-Effect Devices
- 2013
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Point-of-care (POC) diagnostics presents a giant market opportunity with profound societal impact. In particular, specific detection of DNA and protein markers can be essential for early diagnosis of e.g. cancer, cardiovascular disease, infections or allergies. Today, identification of these markers often requires extensive laboratory work and hence is expensive and time consuming. Current methods for recognition and detection of specific biomolecules are mostly optics based and thus impose severe limitations as to convenience, specificity, sensitivity, parallel processing and cost reduction.Electronic sensors based on silicon nanowire field-effect transistors have been reported to be able to detect biomolecules with concentrations down to femtomolar (fM) level with high specificity. Although the reported capability needs further confirmation, the CMOS-compatible fabrication process of such sensors allows for low cost production and high density integration, which are favorable for POC applications. This thesis mainly focuses on the development of a multiplex detection platform based on silicon nanowire field-effect sensors integrated with a microfluidic system for liquid sample delivery. Extensive work was dedicated to developing a top-down fabrication process of the sensors as well as an effective passivation scheme. The operation mechanism and coupling efficiencies of different gate configurations were studied experimentally with the assistance of numerical simulation and equivalent circuits. Using pH sensing as a model system, large effort was devoted to identifying sources for false responses resulting from the instability of the inert-metal gate electrode. In addition, the drift mechanism of the sensor operating in electrolyte was addressed and a calibration model was proposed. Furthermore, protein detection experiments were performed using small-sized Affibody molecules as receptors on the gate insulator to tackle the Debye screening issue. Preliminary results showed that the directionality of the current changes in the sensors was in good agreement with the charge polarities of the proteins. Finally, a graphene-based capacitor was examined as an alternative to the nanowire device for field-effect ion sensing. Our initial attempts showed some attractive features of the capacitor sensor.
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| 13. |
- Fu, C., et al.
(författare)
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Optimization of stiffness for isotropic conductive adhesives
- 2010
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Ingår i: 2010 International Symposium on Advanced Packaging Materials: Microtech, APM '10. - 9781424467563 ; , s. 29-33
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- With the rapid developments of electronic packaging, there is an increasing demand on high performance isotropic conductive adhesives (ICAs). However, the traditional ICAs are brittle, sensitive for crack formation and delamination, which is one of the major drawbacks that limits their use in a wide range of applications. Therefore great efforts have been made to make conductive adhesives more flexible. The present work aims at studying of several chemicals in terms of flexibilizing materials to modify the stiffuess modulus of the conductive adhesives. The effect of the flexibilizers has been characterized by different methods, such as Differential Scanning Calorimetry (DSC), Dynamic Mechanical Analysis (DMA), Thermogravimetric Analysis (TGA), etc. Moreover, the electrical resistance, thermal conductivity and viscosity are also measured in various conditions. Experimental results indicate that one of the flexibilizing materials using flexible ester-linkage is particular of interest as it offers low electrical resistance, high thermal performance and low modulus without decreasing glass transition temperature (Tg) and influencing curing and decomposition conditions. ©2010 IEEE.
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| 14. |
- Fu, Yifeng, 1984, et al.
(författare)
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Selective growth of double-walled carbon nanotubes on gold films
- 2012
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Ingår i: Materials Letters. - : Elsevier BV. - 1873-4979 .- 0167-577X. ; 72, s. 78-80
-
Tidskriftsartikel (refereegranskat)abstract
- Growth of high-quality vertical aligned carbon nanotube (CNT) structures on silicon supported gold (Au) films by thermal chemical vapor deposition (TCVD) is presented. Transmission electron microscopy (TEM) images show that the growth is highly selective. Statistical study reveals that 79.4% of the as-grown CNTs are double-walled. The CNTs synthesized on Au films are more porous than that synthesized on silicon substrates under the same conditions. Raman spectroscopy and electrical characterization performed on the as-grown double-walled CNTs (DWNTs) indicate that they are competitive with those CNTs grown on silicon substrates. Field emission tests show that closed-ended DWNTs have lower threshold field than those open-ended.
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| 15. |
- Hu, Qitao, et al.
(författare)
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Effects of Substrate Bias on Low-Frequency Noise in Lateral Bipolar Transistors Fabricated on Silicon-on-Insulator Substrate
- 2020
-
Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 41:1, s. 4-7
-
Tidskriftsartikel (refereegranskat)abstract
- This letter presents a systematic study of how the substrate bias (Vsub) modulation affects the current-voltage (I-V) characteristics and low-frequency noise (LFN) of lateral bipolar junction transistors (LBJTs) fabricated on a silicon-on-insulator(SOI) substrate. The current gain (β) of npn LBJTs at low base voltage can be greatly improved bya positive Vsub as a result of enhanced electron injection into the base near the buried oxide (BOX)/silicon interface. However, an excessive positive Vsub may also adversely affect the LFN performance by amplifying the noise generated as a result of carrier trapping and detrapping at that interface. Our results provide a practical guideline for improving both β and the overall noise performance when using our LBJT as a local signal amplifier.
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| 16. |
- Hu, Qitao, et al.
(författare)
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Improving Selectivity of Ion-Sensitive Membrane by Polyethylene Glycol Doping
- 2021
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Ingår i: Sensors and actuators. B, Chemical. - : Elsevier. - 0925-4005 .- 1873-3077. ; 328
-
Tidskriftsartikel (refereegranskat)abstract
- Hydrophobic ions can generate considerable interference to ion detection in a complex analyte with membrane-based ion-selective sensors, due to the hydrophobic interaction. In this paper, we demonstrate that the interference from the hydrophobic interaction to the sensors can be significantly reduced by incorporating hydrophilic polyethylene glycol (PEG) into the membrane. The sensor is a silicon nanowire field-effect transistor (SiNWFET) with its surface functionalized with an ionophore-doped mixed-matrix membrane (MMM), where the ionophore is either a commercial Na-ionophore Ⅲ or a novel synthetic metal-organic supercontainer. The incorporation of PEG suppresses the partitioning of hydrophobic ions into the MMM and thus reduces their interference to the detection of target ions. This is evidenced with an improvement in selectivity for Na+ detection in the presence of interfering methylene blue (MB+) ion by more than an order of magnitude. It further enables detection of Na+ and MB+ using a SiNWFET sensor array in a multiplexed manner with controlled susceptivity to cross-interference and a greatly expanded dynamic range.
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| 17. |
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| 18. |
- Hu, Qitao, et al.
(författare)
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Ion sensing with single charge resolution using sub-10-nm electrical double layer-gated silicon nanowire transistors
- 2021
-
Ingår i: Science Advances. - : American Association for the Advancement of Science (AAAS). - 2375-2548. ; 7:49
-
Tidskriftsartikel (refereegranskat)abstract
- Electrical sensors have been widely explored for the analysis of chemical/biological species. Ion detection with single charge resolution is the ultimate sensitivity goal of such sensors, which is yet to be experimentally demonstrated. Here, the events of capturing and emitting a single hydrogen ion (H+) at the solid/liquid interface are directly detected using sub-10-nm electrical double layer-gated silicon nanowire field-effect transistors (SiNWFETs). The SiNWFETs are fabricated using a complementary metal-oxide-semiconductor compatible process, with a surface reassembling step to minimize the device noise. An individually activated surface Si dangling bond (DB) acts as the single H+ receptor. Discrete current signals, generated by the single H+-DB interactions via local Coulomb scattering, are directly detected by the SiNWFETs. The single H+-DB interaction kinetics is systematically investigated. Our SiNWFETs demonstrate unprecedented capability for electrical sensing applications, especially for investigating the physics of solid/liquid interfacial interactions at the single charge level.
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| 19. |
- Hu, Qitao
(författare)
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Silicon Nanowire Based Electronic Devices for Sensing Applications
- 2021
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Silicon nanowire (SiNW) based electronic devices fabricated with a complementary metal-oxide-semiconductor (CMOS) compatible process have wide-range and promising applications in sensing area. These SiNW sensors own high sensitivity, low-cost mass production possibility, and high integration density. In this thesis, we design and fabricate SiNW electronic devices with the CMOS-compatible process on silicon-on-insulator (SOI) substrates and explore their applications for ion sensing and quantum sensing. The thesis starts with ion sensing using SiNW field-effect transistors (SiNWFETs). The specific interaction between a sensing layer and analyte generates a change of local charge density and electrical potential, which can effectively modulate the conductance of SiNW channel. Multiplexed detection of molecular (MB+) and elemental (Na+) ions is demonstrated using a SiNWFET array, which is functionalized with ionophore-incorporated mixed-matrix membranes (MMMs). As a follow-up, polyethylene glycol (PEG) doping strategy is explored to suppress interference from the hydrophobic molecular ion and expand the multiplexed detection range. Then, the SiNW is downscaled to sub-10 nm with a gate-oxide-free configuration for single charge detection in liquid. We directly observe the capture and emission of a single H+ ion with individually activated Si dangling bonds (DBs) on the SiNW surface. This work demonstrates the unprecedented ability of the sub-10 nm SiNWFET for investigating the physics of the solid/liquid interface at single charge level.Apart from ion sensing, the SiNWFET can be suspended and act as a nanoelectromechanical resonator aiming for electrically detecting potential quantized mechanical vibration at low temperature. A suspended SiNW based single-hole transistor (SHT) is explored as a nanoelectromechanical resonator at 20 mK. Mechanical vibration is transduced to electrical readout by the SHT, and the transduction mechanism is dominated by piezoresistive effect. A giant effective piezoresistive gauge factor (~6000) with a strong correlation to the single-hole tunneling is also estimated. This hybrid device is demonstrated as a promising system to investigate macroscopic quantum behaviors of vibration phonon modes.Noise, including intrinsic device noise and environmental interference, is a serious concern for sensing applications of SiNW electronic devices. A H2 annealing process is explored to repair the SiNW surface defects and thus reduce the intrinsic noise by one order of magnitude. To suppress the external interference, lateral bipolar junction transistors (LBJTs) are fabricated on SOI substrate for local signal amplification of the SiNW sensors. Current gain and overall signal-to-noise ratio of the LBJTs are also optimized with an appropriate substrate voltage.
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| 20. |
- Hu, Qitao, et al.
(författare)
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Single Charge Detection in Liquid Sample Using Sub-10 nm Silicon Nanowire Transistors
-
Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- Direct detection of a single charge in liquid sample is the ultimate sensitivity goal of electrical biochemical sensors. In this paper, the events of capturing and emitting a single hydrogen ion (H+) at the solid/liquid interface were directly detected for the first time using sub-10 nm gate-oxide free silicon nanowire field-effect transistors (SiNWFETs). The SiNWFETs were fabricated using CMOS-compatible process. The intrinsic device noise was minimized with a surface reassembling process. Individually activated surface Si dangling bond (DB) acted as single H+ receptor. Discrete current signals generated by single H+-DB interactions via local Coulomb scattering were detected by the SiNWFETs. The kinetics of the single H+-DB interactions was systematically investigated. Our devices demonstrate the unprecedented ability to investigate the physics of solid/liquid interface at single charge level.
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| 21. |
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| 22. |
- Tao, W., et al.
(författare)
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Reliability study for high temperature stable conductive adhesives
- 2010
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Ingår i: 2010 International Symposium on Advanced Packaging Materials: Microtech, APM '10. - 9781424467563 ; , s. 74-77
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- With fast development of electronic packaging, the conductive adhesives were widely used in surface mount and chip interconnection. As an alternative to solder, it has many advantages, such as low processing temperature, less environment contamination and fine pitch capability. However, conductive adhesive joining technology also simultaneously faces a lot of challenges. The major problem of current conductive adhesives is easy to degrade during temperature and humidity aging. Therefore a high temperature stable matrix was developed for conductive adhesive fabrication. Based on this matrix, a kind of isotropic conductive adhesive (ICA) was fabricated in this work. The curing behavior of ICA was investigated by Differential Scanning Calorimeter (DSC). The properties such as glass transition temperature (Tg), storage modulus were detected by Dynamic Mechanical Analyzer (DMA). Thermogravimetric Analysis (TGA) was used to determine the decomposition behavior. The humidity test was subsequently carried out to evaluate moisture resistance of ICA. The electrical resistances of the ICA samples were measured by the multimeter. During humidity test, no obvious change of electrical resistance of ICA samples was observed. ©2010 IEEE.
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| 23. |
- Xu, Xingxing, et al.
(författare)
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All-electrical antibiotic susceptibility testing within 30 min using silicon nano transistors
- 2022
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Ingår i: Sensors and actuators. B, Chemical. - : Elsevier. - 0925-4005 .- 1873-3077. ; 357
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Tidskriftsartikel (refereegranskat)abstract
- Rapid and reliable antibiotic susceptibility testing (AST) platform is highly desired to select the right antibiotics to treat infectious disease at early stage. Here, we demonstrate rapid ASTs using nanoscale silicon ion-selective field-effect transistor sensors. Our sensors profile bacterial metabolic kinetics by monitoring the metabolism induced acidification in the growth media with the absence and the presence of different antibiotics. Rapid AST results could be determined from the metabolic profiles with a total assay time less than 30 min for different bacterial strains. In addition, the sensors could also distinguish the bactericidal mechanisms for antibiotics with different modes of actions. Furthermore, the initial bacterial concentration in an unknown sample, a key parameter to determine its clinic relevance, could be estimated based on the metabolic profiles. Our demonstrated AST method is all-electrical, label-free and silicon technology compatible, and holds great promise for the development of a high-throughput and low-cost point-of-care device.
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| 24. |
- Xu, Xingxing, et al.
(författare)
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Redox Buffering Effects in Potentiometric Detection of DNA Using Thiol-modified Gold Electrodes
- 2021
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Ingår i: ACS Sensors. - : American Chemical Society (ACS). - 2379-3694. ; 6:7, s. 2546-2552
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Tidskriftsartikel (refereegranskat)abstract
- Label-free potentiometric detection of DNA molecules using a field-effect transistor (FET) with a gold gate offers an electrical sensing platform for rapid, straightforward, and inexpensive analyses of nucleic acid samples. To induce DNA hybridization on the FET sensor surface to enable potentiometric detection, probe DNA that is complementary to the target DNA has to be immobilized on the FET gate surface. A common method for probe DNA functionalization is based on thiol-gold chemistry, immobilizing thiol-modified probe DNA on a gold gate with thiol-gold bonds. A self-assembled monolayer (SAM), based on the same thiol-gold chemistry, is also needed to passivate the rest of the gold gate surface to prevent non-specific adsorption and to enable favorable steric configuration of the probe DNA. Herein, the applicability of such FET based potentiometric DNA sensing was carefully investigated, using a silicon nanoribbon FET (SiNRFET) with a gold sensing gate modified with thiol-gold chemistry. We discover that the potential of the gold sensing electrode was determined by the mixed potential of the gold-thiol and gold-oxygen redox interactions. This mixed potential gives rise to a redox buffer effect which buffers the change in the surface charge induced by the DNA hybridization, thus suppressing the potentiometric signal. Analogous redox buffer effects may also be present for other types of potentiometric detections of biomarkers based on thiol-gold chemistry.
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| 25. |
- Yu, Yingtao, et al.
(författare)
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Analysis of Low Frequency Noise in Schottky Junction Trigate Silicon Nanowire FET on Bonded SOI Substrate
- 2022
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Ingår i: IEEE Transactions on Electron Devices. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9383 .- 1557-9646. ; 69:8, s. 4667-4673
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Tidskriftsartikel (refereegranskat)abstract
- In this work, low frequency noise (LFN) in Schottky junction trigate silicon nanowire (SiNW) field-effect transistors (FETs) (SJGFETs) fabricated on bonded silicon on insulator (SOI) substrate is systematically analyzed. The LFN exhibited a typical 1/f spectrum and can be well described by the carrier number fluctuation (CNF) with correlated mobility fluctuation (CMF) model. It was found that CNF is the dominant component of the LFN, while CMF associated with the Coulomb scattering near the buried oxide (BOX)/SiNW channel interface plays an insignificant role. Applying a substrate bias can further modulate the LFN of the SJGFETs, and the effect is ascribed to the nonuniform energy distribution of the BOX/SiNW channel interface traps. Confining current path in the channel bulk away from the interface brought limited gain in terms of LFN performance. Finally, our experimental results suggested a possible transition of CMF mechanism from Coulomb scattering to surface roughness scattering when the current path is pushed away from the BOX/SiNW channel interface to the channel bulk.
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| 26. |
- Yu, Yingtao, et al.
(författare)
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Ultra-Low Noise Schottky Junction Tri-Gate Silicon Nanowire FET on Bonded Silicon-on Insulator Substrate
- 2021
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Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 42:4, s. 469-472
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Tidskriftsartikel (refereegranskat)abstract
- Random trapping and detrapping of charged carriers in the vicinity of gate oxide/Si interface has for long been considered as the dominant noise source in Si nanowire (SiNW) FET-based biochemical sensors. Here we extend our previous work presenting a Schottky junction tri-gate SiNWFETs (SJGFET) fabricated on a bonded silicon-on-insulator (SOI) substrate, aiming for ultra-low device noise generation. The SJGFET exhibits near-ideal gate coupling efficiency with a subthreshold swing of ~66 mV/dec. Its gate-referred voltage noise, S vg , are 1.2×10 -10 and 1.1×10 -11 V 2 μm 2 /Hz at 1 and 10 Hz, respectively. These S vg values are significantly lower than that of previously reported FET-based sensors. More importantly, S vg of the SJGFET are below the reported voltage noise generated by the oxide/electrolyte sensing interface. Using our SJGFET as the signal transducer can greatly relieve the concern of the adverse effect from the intrinsic device noise in biochemical sensing applications.
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