| 1. |
- Nylén, H., et al.
(författare)
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O KVV Auger emission versus resonant photoemission at the O K edge of high-Tc superconductors
- 1998
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Ingår i: Physica C: Superconductivity and its Applications. - 0921-4534. ; 300:3-4, s. 161-170
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Tidskriftsartikel (refereegranskat)abstract
- Photoelectron spectroscopy results on single crystals of the superconductors Bi2Sr2CaCu2O8,Bi2Sr 2CuO6, Ba0.6K0.4BiO3 and the semiconductor Ba0.9K0.1BiO3 are reported for the photon energy region around the O K absorption threshold. The development of the O-KVV Auger structure has been carefully monitored as a function of photon energy. A non-monotonic behavior displaying a feature at a constant binding energy of about 14 eV was found for Bi2Sr2CaCu2O8 and Bi2Sr2CuO6 in a narrow photon energy region of 1 eV at the main edge of the O K absorption spectrum around 530 eV. The corresponding enhancement, connected with the autoionization of O 2 p states, is absent in Ba1-xKxBiO3 in contrast to Bi2Sr2CaCu2O8 and Bi2Sr2CuO6. The resonant enhancement is more pronounced for Bi2Sr2CuO6 as compared to Bi2Sr2CaCu2O8, which can be explained by a lower charge carrier concentration in the former case, leading to a more localized nature of intermediate O 2 p states. The model parameters Cu d-d and O p-p Coulomb interactions and the charge transfer energy Δ are estimated from the experiments.
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| 2. |
- Qvarford, M, et al.
(författare)
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Photoemission and x-ray absorption study of superconducting and semiconducting Ba1-xKxBiO3 single crystals
- 1996
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 54:9, s. 6700-6707
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Tidskriftsartikel (refereegranskat)abstract
- Semiconducting Ba0.9K0.1BiO3 and superconducting Ba0.6K0.4BiO3 single crystals cleaved in situ have been studied by core level and valence band photoelectron spectroscopy and O K edge x-ray absorption spectroscopy. It was found that the general shape of the valence band spectrum agrees with the shape predicted by band structure calculations, but the intensity near the Fermi level, was lower in the experimental spectrum as compared to the calculated. The O K edge spectra showed that the metallic phase is not related to the presence of doping inducted O 2p holes. This property of Ba1-xKxBiO3 shows that the semiconductor-metal transition of this system is of a different nature than that of the hole doped cuprate high-T-c superconductors. The core level photoemission spectra of the cations showed a small asymmetry for Ba0.9K0.1BiO3. Corresponding spectra for Ba0.6K0.4BiO3 showed a larger asymmetry resulting in a resolved high binding energy shoulder in the Bi 4f spectrum. The origin of this feature is discussed.
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| 3. |
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| 4. |
- Girard, R T, et al.
(författare)
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Electronic structure of ZnO(0001) studied by angle-resolved photoelectron spectroscopy
- 1997
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Ingår i: Surface Science. - 0039-6028 .- 1879-2758. ; 373:2-3, s. 409-417
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Tidskriftsartikel (refereegranskat)abstract
- The electronic structure of the ZnO(0001) surface was studied by angle-resolved photoelectron spectroscopy. The recorded normal emission spectra give information about the Valence band states as well as the Zn 3d states. The dispersions of the four valence bands observed in the (0001) direction were compared with theory and are in good agreement with recent calculations which consider the Zn 3d electrons as part of the valence band. The Zn 3d states are seen to separate into two groups of four and six bands, which show dispersion with k(perpendicular to). This is in agreement with theoretical results but the location of these states were not accurately predicted. The present photoemission results show that they lie around 10.5 eV below E(F). Two surface states were observed on the (0001) surface. One, at 7.5 eV binding energy, was predicted by theory and is interpreted as arising from the ''back-bondings'' of the Zn 4s-O 2p mixed bulk states. The other one at 4.5 eV below E(F), most likely Zn 4p-0 2p derived, was not predicted by theoretical calculations and this is discussed further in the text. (C) 1997 Elsevier Science B.V.
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| 5. |
- Hirschauer, B, et al.
(författare)
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Highly oriented alpha-alumina films grown by pulsed laser deposition
- 1997
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Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 305:1-2, s. 243-247
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Tidskriftsartikel (refereegranskat)abstract
- Highly oriented thin films of alpha-alumina have been grown by pulsed laser deposition on Si(lll). The influence of the substrate temperature on the film growth was studied by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (MID). Ablation at temperatures between room temperature and 850 degrees C gave rise to incorporated crystalline aluminium (Al), while the stoichiometric and highly oriented alpha-Al2O3 films were obtained only at 850 degrees C. The XRD rocking curve measurements of the ablated films showed the full-width-at-half-maximum (FWHM) Of 0.2 degrees. Further annealing at 1000 degrees C in air for 26 h slightly improved out-of-plane orientation. (C) 1997 Elsevier Science S.A.
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| 6. |
- Hirschauer, B, et al.
(författare)
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Studies of highly oriented CeO2 films grown on Si(111) by pulsed laser deposition
- 1999
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Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 348:1-2, s. 3-7
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Tidskriftsartikel (refereegranskat)abstract
- CeO2 is an interesting buffer layer material for the growth of YBa(2)Cu(3)O(7-)delta overlayers on Si in devices, with the aim of preventing heat-diffusion due to its excellent lattice matching with Si and YBa(2)Cu(3)O(7-)delta. Epitaxial CeO2-films have been synthesised on Si(lll) by pulsed laser deposition. Stoichiometric changes of the CexOy-film depending on the ambient oxygen pressure during the deposition were studied by X-ray photoelectron spectroscopy. A method is presented for growing a sharp interface between CeO2 and Si(111). The dependence of the inplane orientation of the CeO2 film on the substrate temperature was investigated by X-ray diffraction. The best films, grown at 700 degrees C, showed full width at half maximum of the rocking curve close to 0.1 degrees, but already at room temperature very highly oriented films with less than 0.2 degrees were synthesised. (C) 1999 Elsevier Science S,A. All rights reserved.
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| 7. |
- Karlsson, H S, et al.
(författare)
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System for time- and angle-resolved photoelectron spectroscopy based on an amplified femtosecond titanium:sapphire laser system
- 1996
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Ingår i: Review of Scientific Instruments. - : AIP Publishing. - 0034-6748 .- 1089-7623. ; 67:10, s. 3610-3615
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Tidskriftsartikel (refereegranskat)abstract
- A system for time- and angle-resolved photoelectron spectroscopy based on an amplified femtosecond titanium:sapphire laser system is described. Using this type of system, angle-resolved photoemission is extended to include the possibility of following the time development of excited electrons at and near a solid surface. Time resolution is accomplished by using pump-and-probe technique and the photoemitted electrons are energy analyzed in a time-of-fight detector. In order to perform photoemission, the near-infrared light from the titanium:sapphire laser is frequency up-converted to the vacuum ultraviolet range. This is accomplished by using the high peak power pulses from the laser system to produce short-wavelength radiation by means of harmonic generation. The system described uses cascaded frequency doubling and tripling, reaching a photon energy close to 10 eV. (C) 1996 American Institute of Physics.
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| 8. |
- Qvarford, M, et al.
(författare)
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Doping dependence of the O 1s is core-level photoemission in bi-Sr-Ca-Cu-O superconductors
- 1996
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 53:22, s. 14753-14756
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Tidskriftsartikel (refereegranskat)abstract
- The O 1s core level of three different Bi-Sr-Ca-Cu-O superconductors has been studied by means of high-resolution x-ray-photoelectron spectroscopy (XPS) and x-ray absorption spectroscopy (XAS). The O 1a XPS spectra could be decomposed into three components that were unambiguously assigned to the emission from the three different oxide layers in the crystal structure. These are, in order of increasing binding energy, Cu-O-2, Sr-O, and Bi-O. Furthermore, the component assigned to the Cu-O-2 layers exhibits a shift which depends on the hole doping as monitored by the XAS spectra.
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| 9. |
- Qvarford, M, et al.
(författare)
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Doping dependence of the O 1s is core-level photoemission in bi-Sr-Ca-Cu-O superconductors
- 1996
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Ingår i: PHYSICAL REVIEW B-CONDENSED MATTER. - : AMER INST PHYSICS. - 0163-1829. ; 53:22, s. 14753-14756
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- The O 1s core level of three different Bi-Sr-Ca-Cu-O superconductors has been studied by means of high-resolution x-ray-photoelectron spectroscopy (XPS) and x-ray absorption spectroscopy (XAS). The O 1a XPS spectra could be decomposed into three component
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| 10. |
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| 11. |
- Qvarford, M., et al.
(författare)
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X-ray absorption study of oxygen in the high-Tc superconductor Bi2Sr2CaCu2O8 near the interfaces to Cu, Ag and Au
- 1996
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Ingår i: Physica C: Superconductivity and its Applications. - : Elsevier BV. - 0921-4534 .- 1873-2143. ; 265:1-2, s. 113-120
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Tidskriftsartikel (refereegranskat)abstract
- The influence on O 2p holes in single crystalline Bi2Sr2CaCu2O8 upon the interface formation to Cu, Ag and Au has been studied by O K edge X-ray absorption measurements. It was found that Cu reduces the amount of doping induced O 2p holes significantly in the vicinity of the interface, whereas Ag and Au gave a much smaller reduction of these states. Photoemission spectra confirmed previous findings that Cu causes a strong chemical reaction at the Bi-O surface of Bi2Sr2CaCu2O8, in contrast to Ag and Au which induced only a minimal reaction. The results support the opinion that the Bi-O layers are essential for the doping of the Cu-O2 layers in Bi2Sr2CaCu2O8.
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| 12. |
- Tjernberg, O, et al.
(författare)
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Evidence of pseudogap related core level shifts in Bi2Sr2Ca1-xYxCu2O8+delta
- 1997
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Ingår i: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 79:3, s. 499-502
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Tidskriftsartikel (refereegranskat)abstract
- Photoelectron spectroscopy data from Bi2Sr2Ca1-xYxCu2O8+delta Single crystals, for x = 0, 0.16, and 0.55, are presented. It is shown that there are core level shifts related to the opening of a pseudogap and that similar shifts are observed at the opening of the superconducting gap in optimally doped samples. This result is in agreement with pair formation above T-c as suggested by V.J. Emery and S.A. Kivelson [Nature (London) 374, 434 (1995)].
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| 13. |
- Tjernberg, O, et al.
(författare)
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Evidence of pseudogap related core level shifts in Bi2Sr2Ca1-xYxCu2O8+delta
- 1997
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Ingår i: PHYSICAL REVIEW LETTERS. - : AMER INST PHYSICS. - 0031-9007. ; 79:3, s. 499-502
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- Photoelectron spectroscopy data from Bi2Sr2Ca1-xYxCu2O8+delta Single crystals, for x = 0, 0.16, and 0.55, are presented. It is shown that there are core level shifts related to the opening of a pseudogap and that similar shifts are observed at the opening
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| 14. |
- Tjernberg, O, et al.
(författare)
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Influence of magnetic ordering on the NiO valence band
- 1996
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 54:15, s. 10245-10248
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Tidskriftsartikel (refereegranskat)abstract
- The influence of magnetic ordering on the NiO valence band has been studied by angle resolved photoelectron spectroscopy. Measurements have been performed at temperatures above and below the Neel temperature (T-N), as well as at room. temperature. The results show temperature dependence but no significant changes in the valence band structure are detected in connection to the passing of T-N. The reported data suggest that the magnetic phase transition does not influence the valence band structure significantly.
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| 15. |
- Tjernberg, O, et al.
(författare)
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Resonant photoelectron spectroscopy on NiO
- 1996
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 53:15, s. 10372-10376
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Tidskriftsartikel (refereegranskat)abstract
- Resonant photoelectron spectroscopy studies have been performed on the NiO valence band at photon energies corresponding to the Ni 2p, 3p, and O 1s absorption thresholds. Strong resonances are seen in the vicinity of the Ni 2P threshold, which confirm earlier conclusions from the weaker resonances seen at the Ni 3p threshold. No valence-band resonance is observed at the O 1s threshold. The analysis of this data confirms the picture of NiO as a strongly correlated charge-transfer insulator by identifying the highest-lying states as being of mainly 3d(8)L final-state character. The existence of localized excited Ni states, as well as the delocalized nature of the O states, are confirmed. Comparisons with the configuration-interaction model and quasiparticle calculations are also made.
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