| 1. |
- Laiho, Ari, et al.
(författare)
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Amphiphilic Poly(3-hexylthiophene)-Based Semiconducting Copolymers for Printing of Polyelectrolyte-Gated Organic Field-Effect Transistors
- 2013
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Ingår i: Macromolecules. - : American Chemical Society (ACS). - 0024-9297 .- 1520-5835. ; 46:11, s. 4548-4557
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Tidskriftsartikel (refereegranskat)abstract
- Polyelectrolytes are promising electronically insulating layers for low-voltage organic field effect transistors. However, the polyelectrolyte–semiconductor interface is difficult to manufacture due to challenges in wettability. We introduce an amphiphilic semiconducting copolymer which, when spread as a thin film, can change its surface from hydrophobic to hydrophilic upon exposure to water. This peculiar wettability is exploited in the fabrication of polyelectrolyte-gated field-effect transistors operating below 0.5 V. The prepared amphiphilic semiconducting copolymer is based on a hydrophobic regioregular poly(3-hexylthiophene) (P3HT) covalently linked to a hydrophilic poly(sulfonated)-based random block. Such a copolymer is obtained in a three-step strategy combining Grignard metathesis (GRIM), atom transfer radical polymerization (ATRP) processes, and a postmodification method. The structure of the diblock copolymer was characterized using FT-IR, 1H NMR spectroscopy, and gel permeation chromatography (GPC).
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| 2. |
- Sinno, Hiam, 1983-, et al.
(författare)
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Amphiphilic semiconducting copolymer as compatibility layer for printing polyelectrolyte-gated OFETs
- 2013
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Ingår i: Organic electronics. - : Elsevier. - 1566-1199 .- 1878-5530. ; 14:3, s. 790-796
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Tidskriftsartikel (refereegranskat)abstract
- We report a method for inkjet-printing an organic semiconductor layer on top of the electrolyte insulator layer in polyelectrolyte-gated OFETs by using a surface modification treatment to overcome the underlying wettability problem at this interface. The method includes depositing an amphiphilic diblock copolymer (P3HT-b-PDMAEMA). This material is designed to have one set of blocks that mimics the hydrophobic properties of the semiconductor (poly(3-hexylthiophene) or P3HT), while the other set of blocks include polar components that improve adhesion to the polyelectrolyte insulator. Contact angle measurements, atomic force microscopy, and X-ray photoelectron spectroscopy confirm formation of the desired surface modification film. Successful inkjet printing of a smooth semiconductor layer allows us to manufacture complete transistor structures that exhibit low-voltage operation in the range of 1 V.
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| 3. |
- Tran Nguyen, Ha, et al.
(författare)
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Novel regioregular poly(3-hexylthiophene)-based polycationic block copolymers
- 2011
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Ingår i: POLYMER BULLETIN. - : Springer Science Business Media. - 0170-0839 .- 1436-2449. ; 66:1, s. 51-64
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Tidskriftsartikel (refereegranskat)abstract
- Regioregular poly(3-hexylthiophene) has been successfully incorporated into various poly(N,N-dimethylamino-2-ethyl methacrylate)-based block copolymers, i.e., P3HT-b-PDMAEMA, via Grignard metathesis (GRIM) method and atom transfer radical polymerization (ATRP) reactions. The structure of the diblock copolymers was fully confirmed by FT-IR, H-1 NMR spectroscopy, gel permeation chromatography (GPC), and ultraviolet-visible spectroscopy (UV-vis). The recovered copolymers could be treated by protonation of the pending tertiary amine functions and depending on the relative content in PDMAEMA, the copolymers could be solubilized in more polar solvents where P3HT alone proved to be totally insoluble.
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