| 1. |
- Eklund, Per, et al.
(författare)
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Microstructure and electrical properties of Ti-Si-C-Ag nanocomposite thin films
- 2007
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Ingår i: Surface & Coatings Technology. - : Elsevier BV. - 0257-8972 .- 1879-3347. ; 201:14, s. 6465-6469
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Tidskriftsartikel (refereegranskat)abstract
- Ti-Si-C-Ag nanocomposite coatings consisting of nanocrystalline TiC in an amorphous Si matrix with segregated Ag were deposited by dual magnetron sputtering from Ti3SiC2 and Ag targets. As evidenced by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy, for Ag contents below 10 at.%, the Ag forms similar to 10 nm large crystallites that are homogeneously distributed in the films. For higher Ag contents, coalescence during growth results in the formation of > similar to 100 nm Ag islands on the film surface. The electrical resistivity of the coatings was measured in a four-point-probe setup, and ranged from 340 mu Omega cm (for Ti-Si-C coatings without Ag) to 40 mu Omega cm (for high Ag content).
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| 2. |
- Broitman, Esteban, et al.
(författare)
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Structural and Mechanical Properties of CNx and CPx Thin Solid Films
- 2012
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Ingår i: Key Engineering Materials. - : Trans Tech Publications. - 1013-9826 .- 1662-9795. ; 488-489, s. 581-584
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Tidskriftsartikel (refereegranskat)abstract
- The inherent resiliency, hardness and relatively low friction coefficient of the fullerene-like (FL) allotrope of carbon nitride (CNx) thin solid films give them potential in numerous tribological applications. In this work, we study the substitution of N with P to grow FL-CPx to achieve better cross- and inter-linking of the graphene planes, improving thus the materials mechanical and tribological properties. The CNx and CPx films have been synthesized by DC magnetron sputtering. HRTEM have shown the CPx films exhibit a short range ordered structure with FL characteristics for substrate temperature of 300 degrees C and for a phosphorus content of 10-15 at.%. These films show better mechanical properties in terms of hardness and resiliency compared to those of the FL-CNx films. The low water adsorption of the films is correlated to the theoretical prediction for low density of dangling bonds in both, CNx and CPx. First-principles calculations based on Density Functional Theory (DFT) were performed to provide additional insight on the structure and bonding in CNx, CPx and a-C compounds.
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| 3. |
- Brunell, I.F., et al.
(författare)
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In-situ stress measurement during the deposition of CN x thin films by unbalanced magnetron sputtering; formation of high levels of stress with 28 eV ion irradiation
- 2004
-
Ingår i: Philosophical Magazine Letters. - : Informa UK Limited. - 0950-0839 .- 1362-3036. ; 84:6, s. 395-403
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Tidskriftsartikel (refereegranskat)abstract
- Stress development during growth of CN x films by unbalanced magnetron sputtering has been investigated with an in-situ laser deflection technique. The stress is initially tensile, then it becomes compressive, reaching a maximum of as much as 7 GPa. These are anomalously high stress levels compared with pure carbon, considering the low ion energies (28 eV) and ion-to-neutral arrival rate ratio (<1) employed. This phenomenon is explained by the formation of a fullerene-like microstructure and nitrogen substitution at the growth surface. An accompanying increased reactivity of carbon atoms promotes sp3 bonding or other cross-linking of curved basal planes with resulting film densification.
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| 4. |
- Chubarov, Mikhail, et al.
(författare)
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Initial stages of growth and the influence of temperature during chemical vapor deposition of sp(2)-BN films
- 2015
-
Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : A V S AMER INST PHYSICS. - 0734-2101 .- 1520-8559. ; 33:6, s. 061520-
-
Tidskriftsartikel (refereegranskat)abstract
- Knowledge of the structural evolution of thin films, starting by the initial stages of growth, is important to control the quality and properties of the film. The authors present a study on the initial stages of growth and the temperature influence on the structural evolution of sp(2) hybridized boron nitride (BN) thin films during chemical vapor deposition (CVD) with triethyl boron and ammonia as precursors. Nucleation of hexagonal BN (h-BN) occurs at 1200 degrees C on alpha-Al2O3 with an AlN buffer layer (AlN/alpha-Al2O3). At 1500 degrees C, h-BN grows with a layer-by-layer growth mode on AlN/alpha-Al2O3 up to similar to 4 nm after which the film structure changes to rhombohedral BN (r-BN). Then, r-BN growth proceeds with a mixed layer-by-layer and island growth mode. h-BN does not grow on 6H-SiC substrates; instead, r-BN nucleates and grows directly with a mixed layer-by-layer and island growth mode. These differences may be caused by differences in substrate surface temperature due to different thermal conductivities of the substrate materials. These results add to the understanding of the growth process of sp(2)-BN employing CVD. (C) 2015 American Vacuum Society.
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| 5. |
- Chubarov, Mikhail, et al.
(författare)
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Nucleation and initial growth of sp2-BNon α-Al2O3 and SiC by chemical vapour deposition
- 2014
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- Knowledge on thin films evolution from the early stages of growth is important for the control of quality and properties of the film. Here we present study of the early growth stages and evolution of the crystalline structure of sp2 hybridised Boron Nitride (BN) thin films deposited by chemical vapour deposition from triethyl boron and ammonia. Nucleation of hexagonal BN (h-BN) is observed already at 1200 °C on α-Al2O3 substrate with an AlN buffer layer (AlN/α-Al2O3) while no formation of h-BN is detected when the growth is done on 6H-SiC in a growth temperature range between 1200 °C and 1700 °C. We demonstrate that h-BN grows on AlN/α-Al2O3 exhibiting a layer-by-layer growth mode up to ca. 4 nm followed by a transition to r-BN growth when grown at 1500 °C. The following r-BN growth is suggested to proceed with mixed layer-by-layer and island growth mode; after a thin continuous layer of r-BN, islands formation is favoured leading to a twinned r-BN structure of the film. We find that h-BN does not grow on 6H-SiC substrates instead r-BN nucleates and grows directly as a twinned crystal. The twinning is found to be suppressed by a surface preparation of the SiC substrate with SiH4 prior to BN growth. These results open up for a more controlled epitaxial growth of sp2-BN for future electronic applications.
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| 6. |
- Chubarov, Mikhail, et al.
(författare)
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Polytype pure sp2-BN thin films as dictated by the substrate crystal structure
- 2015
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Ingår i: Chemistry of Materials. - Washington : American Chemical Society (ACS). - 0897-4756 .- 1520-5002. ; 27:5, s. 1640-1645
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Tidskriftsartikel (refereegranskat)abstract
- Boron nitride (BN) is a promising semiconductor material, but its current exploration is hampered by difficulties in growth of single crystalline phase-pure thin films. We compare the growth of sp2-BN by chemical vapor deposition on (0001) 6H-SiC and on (0001) α-Al2O3 substrates with an AlN buffer layer. Polytype-pure rhombohedral BN (r-BN) with a thickness of 200 nm is observed on SiC whereas hexagonal BN (h-BN) nucleates and grows on the AlN buffer layer. For the latter case after a thickness of 4 nm, the h-BN growth is followed by r-BN growth to a total thickness of 200 nm. We find that the polytype of the sp2-BN films is determined by the ordering of Si-C or Al-N atomic pairs in the underlying crystalline structure (SiC or AlN). In the latter case the change from h-BN to r-BN is triggered by stress relaxation. This is important for the development of BN semiconductor device technology.
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| 7. |
- Czigany, Zsolt, et al.
(författare)
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Interpretation of electron diffraction patterns from amorphous and fullerene-like carbon allotropes
- 2010
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Ingår i: Ultramicroscopy. - : Elsevier Science B.V., Amsterdam.. - 0304-3991 .- 1879-2723. ; 110:7, s. 815-819
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Tidskriftsartikel (refereegranskat)abstract
- The short range order in amorphous and fullerene-like carbon compounds has been characterized by selected area electron diffraction (SAED) patterns and compared with simulations of model nanoclusters. Broad rings in SAED pattern from fullerene-like CNx at similar to 1.2, similar to 2, and similar to 3.5 angstrom indicate short-range order similar to that in graphite, but peak shifts indicate sheet curvature in agreement with high-resolution transmission electron microscopy images. Fullerene-like CPx exhibits rings at similar to 1.6 and 2.6 angstrom, which can be explained if it consists of fragments with short-range order and high curvature similar to that of C-20.
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| 8. |
- Eklund, Per, et al.
(författare)
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Homoepitaxial growth of Ti-Si-C MAX-phase thin films on bulk Ti3SiC2 substrates
- 2007
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 304:1, s. 264-269
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Tidskriftsartikel (refereegranskat)abstract
- Ti3SiC2 films were grown on polycrystalline Ti3SiC2 bulk substrates using DC magnetron sputtering. The crystallographic orientation of the film grains is shown to be determined by the respective substrate-grain orientation through homoepitaxial MAX-phase growth. For a film composition close to Ti:Si:C=3:1:2, the films predominantly consist of MAX phases, both Ti3SiC2 and the metastable Ti4SiC3. Lower Si content resulted in growth of TiC with Ti3SiC2 as a minority phase. Thus, MAX-phase heterostructures with preferred crystallographic relationships can also be realized.
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| 9. |
- Emmerlich, Jens, 1974-, et al.
(författare)
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Growth of Ti3SiC2 thin films by elemental target magnetron sputtering
- 2004
-
Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 96:9, s. 4817-4826
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial Ti3SiC2(0001) thin films have been deposited by dc magnetron sputtering from three elemental targets of Ti, C, and Si onto MgO(111) and Al2O3(0001) substrates at temperatures of 800–900 °C. This process allows composition control to synthesize Mn + 1AXn (MAX) phases (M: early transition metal; A: A-group element; X: C and/or N; n = 1–3) including Ti4SiC3. Depositions on MgO(100) substrates yielding the Ti–Si–C MAX phases with (105), as the preferred orientation. Samples grown at different substrate temperatures, studied by means of transmission electron microscopy and x-ray diffraction investigations, revealed the constraints of Ti3SiC2 nucleation due to kinetic limitations at substrate temperatures below 700 °C. Instead, there is a competitive TiCx growth with Si segregation to form twin boundaries or Si substitutional incorporation in TiCx. Physical properties of the as-deposited single-crystal Ti3SiC2 films were determined. A low resistivity of 25 µ cm was measured. The Young's modulus, ascertained by nanoindentation, yielded a value of 343–370 GPa. For the mechanical deformation response of the material, probing with cube corner and Berkovich indenters showed an initial high hardness of almost 30 GPa. With increased maximum indentation loads, the hardness was observed to decrease toward bulk values as the characteristic kink formation sets in with dislocation ordering and delamination at basal planes.
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| 10. |
- Furlan, Andrej, 1974-, et al.
(författare)
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Structure and properties of phosphorus-carbide thin solid films
- 2013
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Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 548:2, s. 247-254
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Tidskriftsartikel (refereegranskat)abstract
- Phosphorus-carbide (CPx) thin films have been deposited by unbalanced reactive magnetron sputtering and investigated by TEM, XPS, SEM, ERDA, Raman scattering spectroscopy, nanoindentation testing, and four-point electrical probe techniques. As-deposited films with x=0.1 are electron amorphous with elements of FL structure and high mechanical resiliency with hardness of 34.4 GPa and elastic recovery of 72%. The electrical resistivity of the films are in the range 0.4-1.7 Ωcm for CP0.027, 1.4-22.9 Ωcm for CP0.1, and lower than the minimal value the four-point probe is able to detect for CPx with x≥0.2.
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| 11. |
- Furlan, Andrej, 1974-, et al.
(författare)
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Synthesis of phosphorus-carbide thin films by magnetron sputtering
- 2008
-
Ingår i: physica status solidi (RRL) - Rapid Research Letters. - : Wiley InterScience. - 1862-6254. ; 2:4, s. 191-193
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Tidskriftsartikel (refereegranskat)abstract
- Phosphorus-carbide, CPx (0.025≤x≤0.1) thin films have beensynthesized by magnetron sputtering from pressed graphite-phosphorustargets. The films were characterized by X-ray photoelectron spectroscopy,transmission electron microscopy and diffraction, andnanoindentation. CP0.02 exhibits C-P bonding in an amorphous structure with elements of curved grapheneplanes, yielding a material with unique short range order. These features are consistent with what has been predicted by our results of theoreticallymodeled synthetic growth of CPx. The films are mechanicallyresilient with hardness up to 24 GPa and elastic recovery upto 72%.
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| 12. |
- Gago, R., et al.
(författare)
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Synthesis of carbon nitride thin films by low-energy ion beam assisted evaporation : On the mechanisms for fullerene-like microstructure formation
- 2005
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Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 483:1-2, s. 89-94
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Tidskriftsartikel (refereegranskat)abstract
- Carbon nitride (CNx) thin films were grown at different substrate temperatures by low-energy (<100 eV) ion beam assistance deposition (LE-IBAD) in order to discern possible formation mechanisms of a fullerene-like (FL) microstructure. The samples are compared to those of well-structured FL-CNx films synthesized by reactive magnetron sputtering (MS). The comparison yields similar trends for both techniques, such as limitation of the nitrogen content at 20–25 at.%, dominance of sp2 hybrids, as well as thermally activated chemical desorption of CxNy species from the substrate during growth. However, CNx films produced by LE-IBAD are amorphous. The lack of FL structural features correlates with a lower degree of sp2 clustering, attributed to the promotion of nitrile groups. Therefore, low-energy ion bombardment is shown not to be a sufficient condition for the growth of FL-CNx. This result reinforces the eventual relevance of pre-formed CxNy species at the sputtering target in MS for the introduction and/or evolution of FL arrangements.
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| 13. |
- Hans, Marcus, et al.
(författare)
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Spinodal decomposition of reactively sputtered (V0.64Al0.36)(0.49)N-0.51 thin films
- 2020
-
Ingår i: Surface & Coatings Technology. - : ELSEVIER SCIENCE SA. - 0257-8972 .- 1879-3347. ; 389
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Tidskriftsartikel (refereegranskat)abstract
- We investigate the decomposition mechanisms of metastable cubic (c-)(V0.64Al0.36)(0.49)N-0.51 thin films, grown by reactive high power pulsed magnetron sputtering, by combination of structural and compositional characterization at the nanometer scale with density functional theory (DFT) calculations. Based on thermodynamic considerations of partial derivative(2)Delta G/partial derivative x(2) < 0, spinodal decomposition is expected for c-V1-xAlxN with x >= 0.35. While no indications for spinodal decomposition are observable from laboratory and synchroton diffraction data after annealing in Ar atmosphere at 1300 degrees C, the formation of wurtzite (w-)AlN is evident after annealing at 900 degrees C by utilizing high energy synchrotron X-ray diffraction. However, the complementary nature of elemental V and Al maps, obtained by energy dispersive X-ray spectroscopy in scanning transmission electron microscopy mode, imply spinodal decomposition of c-(V0.64Al0.36)(0.49)N-0.51 into V- and Al-rich cubic nitride phases after annealing at 900 degrees C. These chemical modulations are quantified by atom probe tomography and maximum variations of x in V1-xAlxN are in the range of 0.36 to 0.50. The magnitude of the compositional modulations is enhanced after annealing at 1100 degrees C as x varies on average between 0.30 and 0.61, while the modulation wavelength remains unchanged at approximately 8 nm. Based on DFT data, the local x variation from 0.30 to 0.61 would cause lattice parameter variations from 4.111 to 4.099 angstrom. This difference corresponds to a shift of the (200) peak from 44.0 to 44.1 degrees. As the maximum decomposition-induced peak separation magnitude of 0.1 degrees is significantly smaller than the measured full width at half maximum of 0.4 degrees, spinodal decomposition cannot be unravelled by diffraction data. However, consistent with DFT predictions, spinodal decomposition in c-(V0.64Al0.36)(0.49)N-0.51 is revealed by chemical composition characterization at the nanometer scale.
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| 14. |
- Henry, Anne, et al.
(författare)
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Early stages of growth and crystal structure evolution of boron nitride thin films
- 2016
-
Ingår i: Japanese Journal of Applied Physics. - : IOP PUBLISHING LTD. - 0021-4922 .- 1347-4065. ; 55:5, s. 05FD06-
-
Tidskriftsartikel (refereegranskat)abstract
- A study of the nucleation and crystal structure evolution at the early stages of the growth of sp(2)-BN thin films on 6H-SiC and alpha-Al2O3 substrates is presented. The growth is performed at low pressure and high temperature in a hot wall CVD reactor, using ammonia and triethylboron as precursors, and H-2 as carrier gas. From high-resolution transmission electron microscopy and X-ray thin film diffraction measurements we observe that polytype pure rhombohedral BN (r-BN) is obtained on 6H-SiC substrates. On alpha-Al2O3 an AlN buffer obtained by nitridation is needed to promote the growth of hexagonal BN (h-BN) to a thickness of around 4 nm followed by a transition to r-BN growth. In addition, when r-BN is obtained, triangular features show up in plan-view scanning electron microscopy which are not seen on thin h-BN layers. The formation of BN after already one minute of growth is confirmed by X-ray photoelectron spectroscopy. (C) 2016 The Japan Society of Applied Physics
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| 15. |
- Höglund, Carina, et al.
(författare)
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Cubic Sc1-xAlxN solid solution thin films deposited by reactive magnetron sputter epitaxy onto ScN(111)
- 2009
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Ingår i: JOURNAL OF APPLIED PHYSICS. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 105:11, s. 132862-
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Tidskriftsartikel (refereegranskat)abstract
- Reactive magnetron sputter epitaxy was used to deposit thin solid films of Sc1-xAlxN (0 andlt;= x andlt;= 1) onto MgO(111) substrates with ScN(111) seed layers. Stoichiometric films were deposited from elemental Sc and Al targets at substrate temperatures of 600 S C. The films were analyzed by Rutherford backscattering spectroscopy, elastic recoil detection analysis, x-ray diffraction, and transmission electron microscopy. Results show that rocksalt structure (c)-Sc1-xAlxN solid solutions with AlN molar fractions up to similar to 60% can be synthesized. For higher AlN contents, the system phase separates into c- and wurtzite structure (w)-Sc1-xAlxN domains. The w-domains are present in three different orientations relative to the seed layer, namely, Sc1-xAlxN(0001)parallel to ScN(111) with Sc1-xAlxN[(1) over bar2 (1) over bar0]parallel to ScN[1 (1) over bar0], Sc1-xAlxN(10 (1) over bar1)parallel to ScN(111) with Sc1-xAlxN[(1) over bar2 (1) over bar0]parallel to ScN[1 (1) over bar0], and Sc1-xAlxN(10 (1) over bar1)parallel to ScN(113). The results are compared to first-principles density functional theory calculations for the mixing enthalpies of c-, w-, and zinc blende Sc0.50Al0.50N solid solutions, yielding metastability with respect to phase separation for all temperatures below the melting points of AlN and ScN.
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| 16. |
- Höglund, Carina, et al.
(författare)
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Effects of volume mismatch and electronic structure on the decomposition of ScAlN and TiAlN solid solutions
- 2010
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 81:22, s. 224101-
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Tidskriftsartikel (refereegranskat)abstract
- Thin solid films of metastable rocksalt structure (c-) Sc1-xAlxN and Ti1-xAlxN were employed as model systems to investigate the relative influence of volume mismatch and electronic structure driving forces for phase separation. Reactive dual magnetron sputtering was used to deposit stoichiometric Sc0.57Al0.43N(111) and Ti0.51Al0.49N(111) thin films, at 675 °C and 600 °C, respectively, followed by stepwise annealing to a maximum temperature of 1100 °C. Phase transformations during growth and annealing were followed in situ using X-ray scattering. The results show that the as-deposited Sc0.57Al0.43N films phase separate at 1000 °C – 1100 °C into non-isostructural c-ScN and wurtzite-structure (w-) AlN, via nucleation and growth at domain boundaries. Ti0.51Al0.49N, however, exhibits spinodal decomposition into isostructural coherent c-TiN and c-AlN, in the temperature interval of 800 °C – 1000 °C. X-ray pole figures show the coherency between c-ScN and w-AlN, with AlN(0001) || ScN(001) and AlN<01ɸ10> || ScN<1ɸ10>. First principles calculations of mixing energy-lattice spacing curves explain the results on a fundamental physics level and open a route for design of novel metastable pseudobinary phases for hard coatings and electronic materials.
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| 17. |
- Höglund, Carina, 1981-, et al.
(författare)
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Sc3AlN : A New Perovskite
- 2008
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Ingår i: European Journal of Inorganic Chemistry. - : Wiley. - 1434-1948 .- 1099-1948 .- 1099-0682. ; 2008:8, s. 1193-1195
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Tidskriftsartikel (refereegranskat)abstract
- Sc3AlN with perovskite structure has been synthesized as the first ternary phase in the Sc–Al–N system. Magnetron sputter epitaxy at 650 °C was used to grow single-crystal, stoichiometric Sc3AlN(111) thin films onto MgO(111) substrates with ScN(111) seed layers as shown by elastic recoil detection analysis, X-ray diffraction, and transmission electron microscopy. The Sc3AlN phase has a lattice parameter of 4.40 Å, which is in good agreement with the theoretically predicted 4.42 Å. Comparisons of total formation energies show that Sc3AlN is thermodynamically stable with respect to all known binary compounds. Sc3AlN(111) films of 1.75 μm thickness exhibit a nanoindentation hardness of 14.2 GPa, an elastic modulus of 249 GPa, and a roomtemperature electrical resistivity of 41.2 μΩ cm.
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| 18. |
- Höglund, Carina, et al.
(författare)
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Wurtzite-structure Sc1-xAlxN solid solution films grown by reactive magnetron sputter epitaxy : structural characterization and first-principles calculations
- 2010
-
Ingår i: Journal of Applied Physics. - : American Institute of Physics. - 0021-8979 .- 1089-7550. ; 107:12, s. 123515-
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Tidskriftsartikel (refereegranskat)abstract
- AlN(0001) was alloyed with ScN with molar fractions up to ~22%, while retaining a singlecrystal wurtzite (w-) structure and with lattice parameters matching calculated values. Material synthesis was realized by magnetron sputter epitaxy of thin films starting from optimal conditions for the formation of w-AlN onto lattice-matched w-AlN seed layers on Al2O3(0001) and MgO(111) substrates. Films with ScN contents between 23% and ~50% exhibit phase separation into nanocrystalline ScN and AlN, while ScN-rich growth conditions yield a transformation to rocksalt-structure Sc1-xAlxN(111) films. The experimental results are analyzed with ion beam analysis, X-ray diffraction, and transmission electron microscopy, together with ab-initio calculations of mixing enthalpies and lattice parameters of solid solutions in wurtzite, rocksalt, and layered hexagonal phases.
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| 19. |
- Music, Denis, et al.
(författare)
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Electrical resistivity modulation of thermoelectric iron based nanocomposites
- 2018
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Ingår i: Vacuum. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0042-207X .- 1879-2715. ; 157, s. 384-390
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Tidskriftsartikel (refereegranskat)abstract
- Iron oxides are promising thermoelectrics, but their high electrical resistivity impedes broader applications. In this work, we have studied Fe oxides with metallic contributions. Pt and Ir additions are also considered to enhance the valence electron concentration and further modify the transport properties. Based on density functional theory explorations, Fe based clusters (Fe-3, Fe-4, and Fe3Pt) are suggested to act as nucleation sites for metallic crystallites, while O leads to formation of an amorphous matrix. This has been validated by transmission electron microscopy and x-ray photoelectron spectroscopy of sputter-grown Fe-Pt-Ir-O thin films. Densely packed bcc Fe grains, approx. 2-3 nm in diameter, are embedded in an amorphous Fe-O matrix in the as-grown state. The Seebeck coefficient reaches even -411 mu V K-1 and the electrical resistivity is up to 5 orders of magnitude lower than that of previously reported literature data on Fe oxides. We suggest that this peculiarity of our films is due to finite states localized at the Fermi level in these nanocomposites.
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| 20. |
- Schmidt, Susann, et al.
(författare)
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A comparative study of direct current magnetron sputtering and high power impulse magnetron sputtering processes for CNX thin film growth with different inert gases
- 2016
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Ingår i: Diamond and related materials. - : ELSEVIER SCIENCE SA. - 0925-9635 .- 1879-0062. ; 64, s. 13-26
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Tidskriftsartikel (refereegranskat)abstract
- Reactive direct current magnetron sputtering (DCMS) and high power impulse magnetron sputtering (HiPIMS) discharges of carbon in different inert gas mixtures (N-2/Ne, N-2/Ar, and N-2/Kr) were investigated for the growth of carbon-nitride (CNX) thin films. Ion mass spectrometry showed that energies of abundant plasma cations are governed by the inert gas and the N-2-to-inert gas flow ratios. The population of ion species depends on the sputter mode; HiPIMS yields approximately ten times higher flux ratios of ions originating from the target to process gas ions than DCMS. Exceptional are discharges in Ne with N-2-to-Ne flow ratios <20%. Here, cation energies and the amount of target ions are highest without influence on the sputter mode. CNX thin films were deposited in 14% N-2/inert gas mixtures at substrate temperatures of 110 degrees C and 430 degrees C. The film properties show a correlation to the substrate temperature, the applied inert gas and sputter mode. The mechanical performance of the films is mainly governed by their morphology and composition, but not by their microstructure. Amorphous and fullerene-like CN0.14 films exhibiting a hardness of similar to 15 GPa and an elastic recovery of similar to 90% were deposited at 110 degrees C in reactive Kr atmosphere by DCMS and HiPIMS.
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| 21. |
- Schmidt, Susann, et al.
(författare)
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Influence of inert gases on the reactive high power pulsed magnetron sputtering process of carbon-nitride thin films
- 2013
-
Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 31:1, s. 011503-
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Tidskriftsartikel (refereegranskat)abstract
- The influence of inert gases (Ne, Ar, Kr) on the sputter process of carbon and carbon-nitride (CNx) thin films was studied using reactive high power pulsed magnetron sputtering (HiPIMS). Thin solid films were synthesized in an industrial deposition chamber from a graphite target. The peak target current during HiPIMS processing was found to decrease with increasing inert gas mass. Time averaged and time resolved ion mass spectroscopy showed that the addition of nitrogen, as reactive gas, resulted in less energetic ion species for processes employing Ne, whereas the opposite was noticed when Ar or Kr were employed as inert gas. Processes in nonreactive ambient showed generally lower total ion fluxes for the three different inert gases. As soon as N-2 was introduced into the process, the deposition rates for Ne and Ar-containing processes increased significantly. The reactive Kr-process, in contrast, showed slightly lower deposition rates than the nonreactive. The resulting thin films were characterized regarding their bonding and microstructure by x-ray photoelectron spectroscopy and transmission electron microscopy. Reactively deposited CNx thin films in Ar and Kr ambient exhibited an ordering toward a fullerene-like structure, whereas carbon and CNx films deposited in Ne atmosphere were found to be amorphous. This is attributed to an elevated amount of highly energetic particles observed during ion mass spectrometry and indicated by high peak target currents in Ne-containing processes. These results are discussed with respect to the current understanding of the structural evolution of a-C and CNx thin films.
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| 22. |
- Stasiak, Tomasz, et al.
(författare)
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Synthesis and characterization of ceramic high entropy carbide thin films from the Cr-Hf-Mo-Ta-W refractory metal system
- 2024
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Ingår i: Surface & Coatings Technology. - : ELSEVIER SCIENCE SA. - 0257-8972 .- 1879-3347. ; 485
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Tidskriftsartikel (refereegranskat)abstract
- We use reactive DC magnetron sputtering to showcase synthesis strategies for multicomponent carbides with the NaCl-type fcc structure and illustrate how deposition conditions allow controlling the formation of metallic and ceramic single phases in the Cr-Hf-Mo-Ta-W system. The synthesis is performed in argon flow and different acetylene flows from 0 to 12 sccm, at ambient and elevated temperatures (700 degrees C), respectively, hindering/promoting the adatom diffusion. Structural and microstructural investigations reveal the formation of the bcc metallic phase ( a = 3.188 - 3.209 & Aring;) in films deposited without acetylene flow, also supported by ab initio density function theory (DFT) analysis of lattice parameters as a function of the C content. Experimentally, a bcc-to-fcc phase transition is observed through the formation of an amorphous coating. Contrarily, samples deposited in higher acetylene flow show an fcc multielement carbide phase ( a = 4.33 - 4.49 & Aring;). The crystalline films reveal columnar morphology, while the amorphous ones are very dense. We report promising mechanical properties, with hardness up to 25 +/- 1 GPa. The indentation moduli reach up to 319 +/- 6 GPa and show trends consistent with DFT predictions. Our study paves the path towards the preparation of Cr-Hf-Mo-Ta-W multicomponent carbides by magnetron sputtering, showing promising microstructure as well as mechanical properties.
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| 23. |
- Tucker, Mark, et al.
(författare)
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Filtered pulsed cathodic arc deposition of fullerene-like carbon and carbon nitride films
- 2014
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 115:14, s. 144312-
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Tidskriftsartikel (refereegranskat)abstract
- Carbon and carbon nitride films (CNx , 0 ≤ x ≤ 0.26) were deposited by filtered pulsed cathodic arc and were investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. A “fullerene-like” (FL) structure of ordered graphitic planes, similar to that of magnetron sputtered FL-CNx films, was observed in films deposited at 175 °C and above, with N2 pressures of 0 and 0.5 mTorr. Higher substrate temperatures and significant nitrogen incorporation are required to produce similar FL structure by sputtering, which may, at least in part, be explained by the high ion charge states and ion energies characteristic of arc deposition. A gradual transition from majority sp3-hybridized films to sp2 films was observed with increasing substrate temperature. High elastic recovery, an attractive characteristic mechanical property of FL-CNx films, is evident in arc-deposited films both with and without nitrogen content, and both with and without FL structure.
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