| 1. |
- Pliatsikas, Nikolaos, et al.
(författare)
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Manipulation of thin silver film growth on weakly interacting silicon dioxide substrates using oxygen as a surfactant
- 2020
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : A V S AMER INST PHYSICS. - 0734-2101 .- 1520-8559. ; 38:4
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Tidskriftsartikel (refereegranskat)abstract
- The authors study the morphological evolution of magnetron-sputtered thin silver (Ag) films that are deposited on weakly interacting silicon dioxide (SiO2) substrates in an oxygen-containing (O-2) gas atmosphere. In situ and real-time monitoring of electrically conductive layers, along with ex situ microstructural analyses, shows that the presence of O-2, throughout all film-formation stages, leads to a more pronounced two-dimensional (2D) morphology, smoother film surfaces, and larger continuous-layer electrical resistivities, as compared to Ag films grown in pure argon (Ar) ambient. In addition, the authors data demonstrate that 2D morphology can be promoted, without compromising the Ag-layer electrical conductivity, if O-2 is deployed with high temporal precision to target film formation stages before the formation of a percolated layer. Detailed real-space imaging of discontinuous films, augmented by in situ growth monitoring data, suggests that O-2 favors 2D morphology by affecting the kinetics of initial film-formation stages and most notably by decreasing the rate of island coalescence completion. Furthermore, compositional and bonding analyses show that O-2 does not change the chemical nature of the Ag layers and no atomic oxygen is detected in the films, i.e., O-2 acts as a surfactant. The overall results of this study are relevant for developing noninvasive surfactant-based strategies for manipulating noble-metal-layer growth on technologically relevant weakly interacting substrates, including graphene and other 2D crystals.
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| 2. |
- Santarossa, Francesca, et al.
(författare)
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Naturally Produced Co/CoO Nanocrystalline Magnetic Multilayers : Structure and Inverted Hysteresis
- 2016
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Ingår i: Journal of Nanoscience and Nanotechnology. - : American Scientific Publishers. - 1533-4880 .- 1533-4899. ; 16:5, s. 4960-4967
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Tidskriftsartikel (refereegranskat)abstract
- Cobalt-based multilayers with excellent sequencing are grown via radiofrequency magnetron sputtering with the use of one Co target and natural oxidation. The Co layers are continuous, fully textured {111} and have the face centered cubic structure. At the end of deposition of each Co layer air is let to flow into the vacuum chamber via a fine (leak) valve. The top of Co is oxidized. The oxidized layers consist of cubic CoO crystallites. Near the film surface hexagonal Co(OH)(2) is also detected. Magneto-optical Kerr effect hysteresis loops show in-plane magnetized films. The magnetic saturation field in the out-of-plane measurements is large exceeding 12 kOe. This observation supports indirectly the fact that Co is face centered cubic; if it was c-axis textured hexagonal the magnetocrystalline anisotropy would be large resulting in smaller values of the saturation field. As the Co-layer thickness decreases the in-plane loops show reduced remanence, slow approach to magnetic saturation and the out-of-plane loops show inverted hysteresis and/or crossing loop features with sizeable remanence. The effects are discussed with respect to the enhanced orbital magnetic moment of Co and the antiferromagnetic coupling between Co spins at the Co/CoO interface.
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| 3. |
- Delimitis, Andreas, et al.
(författare)
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Microstructural Investigation of SiOx Thin Films Grown by Reactive Sputtering on (001) Si Substrates
- 2012
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Ingår i: Journal of Nano Research. - 1661-9897. ; 17, s. 147-156
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Tidskriftsartikel (refereegranskat)abstract
- In the Current Study, the Structural Characteristics of Siox Thin Films Grown by Magnetron Sputtering on Si Substrates Are Reported. High Resolution Transmission Electron Microscopy Revealed the Formation of Amorphous Siox Films for the as-Deposited Samples, as Well as the Ones Annealed in Ambient Air for 30 Min at 950oC and of Si Nanocrystals, Embedded in Amorphous Siox, after Ar Annealing for 1-4 Hours at 1000oC. the Nanocrystals, with Sizes up to 6 Nm, Predominately Exhibit {111} Lattice Planes. Energy-Dispersive X-Ray Analysis Showed that the Si/O Ratio Is between 0.5-1, I.e. the Amorphous Films Comprise of a Mixture of Sio2 and Sio. Phase Images and Corresponding Strain Maps Created Using Fourier Filtering Revealed a Uniform Contrast in the Nanocrystals, which Shows that the Si Lattice Constant Does Not Vary Significantly. the Residual Strain Variations, around 4%, May Account for the Possible Existence of a Small Percentage of Highly Disordered Si or Siox Residual Clusters inside the Regular Si Matrix, in Full Agreement with Photoluminescence Measurements Performed on the same Materials.
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