| 1. |
|
|
| 2. |
- Di Benedetto, Luigi, et al.
(författare)
-
Strain balance approach for optimized signal-to-noise ratio in SiGe quantum well bolometers
- 2009
-
Ingår i: ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference. - 9781424443536 ; , s. 101-104
-
Konferensbidrag (refereegranskat)abstract
- This work presents thermal and electrical characterization of SiGe/Si multi-quantum wells (MQWs) with different layer profiles in complete bolometer structures. The thermal property of the bolometers was studied by measuring thermal coefficient of resistivity (TCR) through I-V curves for five temperatures (25, 40, 55, 80 and 100°C) and for four different pixel areas. The results show a strong dependency of TCR on the Si/SiGe layer thickness and the presence of dopant impurity in the MQW. The noise measurements of MQWs were performed carefully by eliminating all external contributions and the noise spectroscopy provided the noise characteristic parameters. The results demonstrate that the noise depends on the geometric size of the MQW and it increases with decreasing of the pixel area. The investigations show the noise level in the bolometer structures is sensitive to any dopant segregation from the contact layers.
|
|
| 3. |
- Kehoe, Laura, et al.
(författare)
-
Make EU trade with Brazil sustainable
- 2019
-
Ingår i: Science. - : American Association for the Advancement of Science (AAAS). - 0036-8075 .- 1095-9203. ; 364:6438, s. 341-
-
Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)
|
|
| 4. |
- Kolahdouz, Mohammadreza, et al.
(författare)
-
Improvement of infrared detection using Ge quantum dots multilayer structure
- 2010
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 96:21, s. 213516-
-
Tidskriftsartikel (refereegranskat)abstract
- Monocrystalline SiGe/Si multiquantum dot and well structures have been manufactured/compared as thermistor materials for infrared detection. The performance of the devices (both the thermal and electrical) has been very sensitive to the quality of the epitaxial layers which is evaluated by the interfacial roughness and strain amount. This study demonstrates that the devices containing quantum dots have higher thermal coefficient resistance 3.4%/K with a noise constant (K-1/f) value of 2x10(-9).
|
|
| 5. |
- Kolahdouz, Mohammadreza, et al.
(författare)
-
Selective Growth of B- and C-Doped SiGe Layers in Unprocessed and Recessed Si Openings for p-type Metal-Oxide-Semiconductor Field-Effect Transistors Application
- 2010
-
Ingår i: Journal of the Electrochemical Society. - : The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 157:6, s. H633-H637
-
Tidskriftsartikel (refereegranskat)abstract
- This work presents the pattern dependency of the selective epitaxial growth of boron- and carbon-doped SiGe layers in recessed and unprocessed openings. The layer profile is dependent on deposition time, chip layout, and growth parameters. Carbon and boron doping compensates for the strain in SiGe layers, and when both dopants are introduced, the strain reduction is additive. The incorporation of boron and carbon in the SiGe matrix is a competitive action. The concentration of carbon decreases, whereas the boron amount increases in SiGe layers with higher Ge content. In recessed openings, the Ge content is independent of the recess depth. The strain amount in the grown layers is graded vertically, which is due to the thickness of the epilayer exceeding the critical thickness.
|
|
| 6. |
- Kolahdouz, Mohammadreza, et al.
(författare)
-
Selective growth of B- and C-doped SiGe layers in unprocessed and recessed Si openings for pMOSFET application
- 2009
-
Ingår i: EUROCVD 17 / CVD 17. - : Electrochemical Society. - 9781566777452 ; , s. 81-88
-
Konferensbidrag (refereegranskat)abstract
- This work presents pattern dependency of selective epitaxial growth of boron- or carbon-doped SiGe layers in recessed or unprocessed openings. The layer profile and quality of epi-layers were found to be dependent on chip layout and the growth parameters. Carbon- and boron-doping compensated the strain in SiGe layers and when both dopants are introduced the strain reduction was additive. The incorporation of boron and carbon in SiGe matrix showed to be a competitive action. The concentration of carbon decreased when the boron amount increased in SiGe layers with higher Ge content.
|
|
| 7. |
- Ricci, Fabrizio, et al.
(författare)
-
Tricuspid regurgitation management : a systematic review of clinical practice guidelines and recommendations
- 2022
-
Ingår i: European heart journal. Quality of care & clinical outcomes. - : Oxford University Press (OUP). - 2058-1742 .- 2058-5225. ; 8:3, s. 238-248
-
Tidskriftsartikel (refereegranskat)abstract
- Tricuspid regurgitation (TR) is a highly prevalent condition and an independent risk factor for adverse outcomes. Multiple clinical guidelines exist for the diagnosis and management of TR, but the recommendations may sometimes vary. We systematically reviewed high-quality guidelines with a specific focus on areas of agreement, disagreement, and gaps in evidence. We searched MEDLINE and EMBASE (1 January 2011 to 30 August 2021), the Guidelines International Network International, Guideline Library, National Guideline Clearinghouse, National Library for Health Guidelines Finder, Canadian Medical Association Clinical Practice Guidelines Infobase, Google Scholar, and websites of relevant organizations for contemporary guidelines that were rigorously developed (as assessed by the Appraisal of Guidelines for Research and Evaluation II tool). Three guidelines were finally retained. There was consensus on a TR grading system, recognition of isolated functional TR associated with atrial fibrillation, and indications for valve surgery in symptomatic vs. asymptomatic patients, primary vs. secondary TR, and isolated TR forms. Discrepancies exist in the role of biomarkers, complementary multimodality imaging, exercise echocardiography, and cardiopulmonary exercise testing for risk stratification and clinical decision-making of progressive TR and asymptomatic severe TR, management of atrial functional TR, and choice of transcatheter tricuspid valve intervention (TTVI). Risk-based thresholds for quantitative TR grading, robust risk score models for TR surgery, surveillance intervals, population-based screening programmes, TTVI indications, and consensus on endpoint definitions are lacking.
|
|
