| 1. |
- Andrearczyk, Tomasz, et al.
(författare)
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Structural Quality and Magnetotransport Properties of Epitaxial Layers of the (Ga,Mn)(Bi,As) Dilute Magnetic Semiconductor
- 2020
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Ingår i: Materials. - : MDPI. - 1996-1944. ; 13:23, s. 1-14
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Tidskriftsartikel (refereegranskat)abstract
- Structural analysis of epitaxial layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor (DMS), together with investigations of their magnetotransport properties, has been thoroughly performed. The obtained results are compared with those for the reference (Ga,Mn)As layers, grown under similar conditions, with the aim to reveal an impact of Bi incorporation on the properties of this DMS material. Incorporation of Bi into GaAs strongly enhances the spin-orbit coupling strength in this semiconductor, and the same has been expected for the (Ga,Mn)(Bi,As) alloy. In turn, importantly for specific spintronic applications, strong spin-orbit coupling in ferromagnetic systems opens a possibility of directly controlling the direction of magnetization by the electric current. Our investigations, performed with high-resolution X-ray diffractometry and transmission electron microscopy, demonstrate that the (Ga,Mn)(Bi,As) layers of high structural quality and smooth interfaces can be grown by means of the low-temperature molecular-beam epitaxy method, despite a large difference between the sizes of Bi and As atoms. Depending on the applied buffer layer, the DMS layers can be grown under either compressive or tensile misfit strain, which influences their magnetic properties. It is shown that even small 1% Bi content in the layers strongly affects their magnetoelectric properties, such as the coercive field and anisotropic magnetoresistance.
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| 2. |
- Gryglas-Borysiewicz, Marta, et al.
(författare)
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Hydrostatic pressure influence on T-C in (Ga,Mn)As
- 2020
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Ingår i: Physical Review B. - : American Physical Society. - 2469-9950 .- 2469-9969. ; 101:5, s. 1-10
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Tidskriftsartikel (refereegranskat)abstract
- The influence of hydrostatic pressure on the Curie temperature T-C of thin ferromagnetic (Ga,Mn)As layers is studied. New experimental data unambiguously point to both positive and negative pressure-induced changes of Curie temperature. The positive pressure coefficient is observed for samples with relatively high values of T-C and can be quantitatively described by the p-d Zener model of carrier-mediated ferromagnetism within the six-band k . p formalism and the ab initio approach. First-principles calculations of structural, electronic, and magnetic properties of (Ga,Mn)As show that antiferromagnetic coupling of substitutional Mn atoms with interstitial ones may account for a decrease of T-C under pressure in samples having a substantial concentration of interstitial Mn.
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| 3. |
- Lawniczak-Jablonska, Krystyna, et al.
(författare)
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Structural and magnetic properties of the molecular beam epitaxy grown MnSb layers on GaAs substrates
- 2009
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 106:8
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Tidskriftsartikel (refereegranskat)abstract
- The structural and magnetic properties of MnSb layers grown on two differently oriented GaAs substrates are reported. The MnSb compounds grow nonhomogenously both on GaAs (111) B and on GaAs (100) substrates. In x-ray diffraction studies the formation of two epitaxial domains is observed depending on the crystallographic orientation of the substrate. The observed diffusion of Ga atoms from the substrate to the layers results in the formation of an additional Mn-rich cubic phase of GaMnSb. In the case of the (100) oriented substrate, the diffusion of Mn into the substrate was additionally found. Traces of other phases were also noticed. The complex morphology of the layers is found to influence their magnetic properties. Magnetic force microscopy images revealed an inhomogenous distribution of the magnetic force gradient on the surface and the formation of magnetic domains in the samples. X-ray absorption studies of the chemical bonding and local atomic structure around Mn atoms confirmed high structural and chemical disorder in the samples. The chemical bonding of the dominating fraction of Mn atoms is found, however, similar to that in the reference MnSb powder. The x-ray magnetic circular dichroism measurements reveal an enhanced orbital moment and a reduced spin moment, which is most likely caused by the presence of different phases and a Mn-rich surface in the investigated samples.
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| 4. |
- Sadowski, Janusz, et al.
(författare)
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Bi incorporation and segregation in the MBE-grown GaAs-(Ga,Al) As-Ga(As,Bi) core shell nanowires
- 2022
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Ingår i: Scientific Reports. - : Nature Publishing Group. - 2045-2322. ; 12:1
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Tidskriftsartikel (refereegranskat)abstract
- Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(111)B substrates with Au-droplet assisted mode. Bi-doped shells are grown at low temperature (300 degrees C) with a close to stoichiometric Ga/As flux ratio. At low Bi fluxes, the Ga(As,Bi) shells are smooth, with Bi completely incorporated into the shells. Higher Bi fluxes (Bi/As flux ratio similar to 4%) led to partial segregation of Bi as droplets on the nanowires sidewalls, preferentially located at the nanowire segments with wurtzite structure. We demonstrate that such Bi droplets on the sidewalls act as catalysts for the growth of branches perpendicular to the GaAs trunks. Due to the tunability between zinc-blende and wurtzite polytypes by changing the nanowire growth conditions, this effect enables fabrication of branched nanowire architectures with branches generated from selected (wurtzite) nanowire segments.
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| 5. |
- Sadowski, Janusz, et al.
(författare)
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Formation of two-dimensionally confined superparamagnetic (Mn, Ga)As nanocrystals in high-temperature annealed (Ga, Mn)As/GaAs superlattices
- 2013
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Ingår i: Journal of Physics: Condensed Matter. - : IOP Publishing. - 1361-648X .- 0953-8984. ; 25:19, s. 6-196005
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Tidskriftsartikel (refereegranskat)abstract
- The annealing-induced formation of (Mn, Ga)As nanocrystals in (Ga, Mn)As/GaAs superlattices was studied by x-ray diffraction, transmission electron microscopy and magnetometry. The superlattice structures with 50 Å thick (Ga, Mn)As layers separated by 25, 50 and 100 Å thick GaAs spacers were grown by molecular beam epitaxy at low temperature (250 ° C), and then annealed at high temperatures of 400, 560 and 630 ° C. The high-temperature annealing causes decomposition to a (Ga, Mn)As ternary alloy and the formation of (Mn, Ga)As nanocrystals inside the GaAs matrix. The nanocrystals are confined in the planes that were formerly occupied by (Ga, Mn)As layers for the up to 560 ° C annealing and diffuse throughout the GaAs spacer layers at 630 ° C annealing. The two-dimensionally confined nanocrystals exhibit a superparamagnetic behavior which becomes high-temperature ferromagnetism (~350 K) upon diffusion.
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| 6. |
- Sadowski, Janusz, et al.
(författare)
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Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content
- 2011
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 84:24, s. 245306-
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Tidskriftsartikel (refereegranskat)abstract
- X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to study the structural and magnetic properties of Mn-rich (Mn,Ga)As nanocrystals embedded in GaAs. These nanocomposites are obtained by moderate-temperature (400 degrees C) and high-temperature (560 degrees C and 630 degrees C) annealing of (Ga,Mn)As layers with Mn concentrations between 0.1% and 2%, grown by molecular beam epitaxy at 270 degrees C. Decomposition of (Ga,Mn)As is already observed at the lowest annealing temperature of 400 degrees C for layers with initial Mn content of 1% and 2%. Both cubic and hexagonal (Mn, Ga) As nanocrystals, with similar diameters of 7-10 nm, are observed to coexist in layers with an initial Mn content of 0.5% and 2% after higher-temperature annealing. Measurements of magnetization relaxation in the time span 0.1-10 000 s provide evidence for superparamagnetic properties of the (Mn,Ga)As nanocrystals, as well as for the absence of spin-glass dynamics. These findings point to weak coupling between nanocrystals even in layers with the highest nanocrystal density.
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| 7. |
- Sadowski, Janusz, et al.
(författare)
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Structural Properties of TaAs Weyl Semimetal Thin Films Grown by Molecular Beam Epitaxy on GaAs(001) Substrates
- 2022
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Ingår i: Crystal Growth & Design. - : American Chemical Society (ACS). - 1528-7483 .- 1528-7505. ; 22:10, s. 6039-6045
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Tidskriftsartikel (refereegranskat)abstract
- Thin crystalline layers of TaAs Weyl semimetal are grown by molecular beam epitaxy on GaAs(001) substrates. The (001) planes of the tetragonal TaAs lattice are parallel to the GaAs(001) substrate, but the corresponding in-plane crystallographic directions of the substrate and the layer are rotated by 45 degrees. In spite of a substantial lattice mismatch (about 19%) between the GaAs(001) substrate and TaAs epilayer, no misfit dislocations are observed at the GaAs(001)/TaAs(001) interface. Only stacking fault defects in TaAs are detected by transmission electron microscopy. Thorough X-ray diffraction measurements and analysis of the in situ reflection high-energy electron diffraction images indicate that TaAs layers are fully relaxed already at the initial deposition stage. Atomic force microscopy imaging reveals the columnar structure of the layers, with lateral (parallel to the layer's surface) columns about 20 nm wide and 200 nm long. Both X-ray diffraction and transmission electron microscopy measurements indicate that the columns share the same orientation and crystalline structure.
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| 8. |
- Sulich, Adrian, et al.
(författare)
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Unit cell distortion and surface morphology diversification in a SnTe/CdTe(001) topological crystalline insulator heterostructure : influence of defect azimuthal distribution
- 2022
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Ingår i: Journal of Materials Chemistry C. - : Royal Society of Chemistry. - 2050-7526 .- 2050-7534. ; 10:8, s. 3139-3152
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Tidskriftsartikel (refereegranskat)abstract
- Challenges and opportunities arising from molecular beam epitaxial growth of topological crystalline insulator heterostructures composed of a rock-salt SnTe(001) layer of varying thickness (from 80 nm to 1000 nm) and a zinc blende 4 mu m thick CdTe(001) buffer layer grown on a commercial GaAs(001) substrate with 2 degrees off-cut toward the [100] direction were studied with a focus on crystal lattice strain, unit cell symmetry breaking and surface quality. The results indicate that the CdTe buffer is almost fully relaxed whereas in SnTe layers slight anisotropic relaxation is observed that varies from 86.2% to 98.3% with the layer thickness increasing. The relaxation process involves formation of misfit dislocations, mainly of Lomer-type (consisting of two associated 60 degrees dislocations), both at CdTe/GaAs and SnTe/CdTe interfaces. Azimuthal spatial distribution of defects is anisotropic due to a disparity of 60 degrees dislocation mobility toward orthogonal [-110] and [110] crystallographic directions. This results in a monoclinic distortion of the SnTe unit cell, as observed especially in the layers grown without additional Te molecular flux. A reflections selection method is proposed to measure such crystal deformations. Qualitatively new morphology of the SnTe surface of a reduced symmetry with nanoripple-like structures oriented close to the 100 (or, rarely, to 120) crystallographic in-plane direction is observed. The possible mechanism of their formation is dislocation-driven while their extended shape and predominant crystalline orientation may be influenced by the anisotropy of defect azimuthal distribution. Due to the magnitude of measured lattice strain (similar to 10(-3)) the monoclinic distortion in SnTe(001) layers is expected to be large enough to affect their physical properties, e.g., offering the way of controlling the crystal-symmetry-protected surface states (deformation-induced opening of the energy gap in the spectrum of metallic topological surface states). Thus, it may serve as an additional degree of freedom in designing topological spintronic devices.
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