| 1. |
- Salomé, Pedro M. P., et al.
(författare)
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Cu(In,Ga)Se-2 Solar Cells With Varying Na Content Prepared on Nominally Alkali-Free Glass Substrates
- 2013
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Ingår i: IEEE Journal of Photovoltaics. - 2156-3381. ; 3:2, s. 852-858
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, Cu(In,Ga)Se-2 (CIGS) thin-film solar cells are prepared on nominally alkali-free glass substrates using an in-line CIGS growth process. As compared with, for example, borosilicate glass or quartz, the glass is engineered to have similar thermal expansion coefficient as soda-lime glass (SLG) but with alkali content close to zero. Na is incorporated in the CIGS material using an ex-situ deposited NaF precursor layer evaporated onto the Mo back contact. Several thicknesses of the NaF layer were tested. The results show that there is a process window, between 15 and 22.5 nm NaF, where the solar cell conversion efficiency is comparable with or exceeding that of SLG references. The effect of an NaF layer that is too thin on the solar cell parameters was mainly lowering the open-circuit voltage, which points to a lower effective dopant concentration in the CIGS layer and is also consistent with presented C-V measurements and modeling results. For excessively thick NaF layers, delamination of the CIGS layer occurred. Additional measurements, such as scanning electron microscopy (SEM), secondary ion mass spectrometry, capacitance-voltage analysis (C-V), time-resolved photoluminescence (TRPL), external quantum efficiency (EQE), current-voltage analysis (J-V), and modeling, are presented, and the results are discussed.
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| 2. |
- Fjällström, Viktor, et al.
(författare)
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Potential-Induced Degradation of CuIn1-xGaxSe2 Thin Film Solar Cells
- 2013
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Ingår i: IEEE Journal of Photovoltaics. - 2156-3381. ; 3:3, s. 1090-1094
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Tidskriftsartikel (refereegranskat)abstract
- The use of Na-free or low Na content glass substrates is observed to enhance the resiliency to potential-induced degradation, as compared with glass substrates with high Na content, such as soda lime glass (SLG). The results from stress tests in this study suggest that degradation caused by a combination of heat and bias across the SLG substrate is linked to increased Na concentration in the CdS and Cu(In,Ga)Se-2 (CIGS) layers in CIGS-based solar cells. The degradation during the bias stress is dramatic. The efficiency drops to close to 0% after 50 h of stressing. On the other hand, cells on Na-free and low Na content substrates exhibited virtually no efficiency degradation. The degraded cells showed partial recovery by resting at room temperature without bias; thus, the degradation is nonpermanent and may be due to Na migration and accumulation rather than chemical reaction.
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| 3. |
- Holmberg, J, et al.
(författare)
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Ephrin-A2 reverse signaling negatively regulates neural progenitor proliferation and neurogenesis
- 2005
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Ingår i: Genes & development. - : Cold Spring Harbor Laboratory. - 0890-9369 .- 1549-5477. ; 19:4, s. 462-471
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Tidskriftsartikel (refereegranskat)abstract
- The number of cells in an organ is regulated by mitogens and trophic factors that impinge on intrinsic determinants of proliferation and apoptosis. We here report the identification of an additional mechanism to control cell number in the brain: EphA7 induces ephrin-A2 reverse signaling, which negatively regulates neural progenitor cell proliferation. Cells in the neural stem cell niche in the adult brain proliferate more and have a shorter cell cycle in mice lacking ephrin-A2. The increased progenitor proliferation is accompanied by a higher number of cells in the olfactory bulb. Disrupting the interaction between ephrin-A2 and EphA7 in the adult brain of wild-type mice disinhibits proliferation and results in increased neurogenesis. The identification of ephrin-A2 and EphA7 as negative regulators of progenitor cell proliferation reveals a novel mechanism to control cell numbers in the brain.
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| 4. |
- Hultqvist, Adam, et al.
(författare)
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Performance of Cu(In,Ga)Se-2 solar cells using nominally alkali free glass substrates with varying coefficient of thermal expansion
- 2013
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 114:9, s. 094501-
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Tidskriftsartikel (refereegranskat)abstract
- In this report, Cu(In,Ga)Se-2, CIGS, solar cell devices have been fabricated on nominally alkali free glasses with varying coefficients of thermal expansion (CTE) from 50 to 95* 10(-7)/degrees C. A layer of NaF deposited on top of the Mo was used to provide Na to the CIGS film. Increasing the glass CTE leads to a change of stress state of the solar cell stack as evidenced by measured changes of stress state of the Mo layer after CIGS deposition. The open circuit voltage, the short circuit current density, and the fill factors, for solar cells made on the various substrates, are all found to increase with CTE to a certain point. The median energy conversion efficiency values for 32 solar cells increases from 14.6% to the lowest CTE glass to 16.5% and 16.6%, respectively, for the two highest CTE glasses, which have CTE values closest to that of the soda lime glass. This is only slightly lower than the 17.0% median of soda lime glass reference devices. We propose a model where an increased defect density in the CIGS layer caused by thermal mismatch during cool-down is responsible for the lower efficiency for the low CTE glass substrates.
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| 5. |
- Lopes, T. S., et al.
(författare)
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Cu(In,Ga)Se2 based ultrathin solar cells the pathway from lab rigid to large scale flexible technology
- 2023
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Ingår i: npj Flexible Electronics. - : Springer Nature. - 2397-4621. ; 7:1
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Tidskriftsartikel (refereegranskat)abstract
- The incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se2 based solar cells is shown. The fabrication used an industry scalable lithography technique—nanoimprint lithography (NIL)—for a 15 × 15 cm2 dielectric layer patterning. Devices with a NIL nanopatterned dielectric layer are benchmarked against electron-beam lithography (EBL) patterning, using rigid substrates. The NIL patterned device shows similar performance to the EBL patterned device.The impact of the lithographic processes in the rigid solar cells’ performance were evaluated via X-ray Photoelectron Spectroscopy and through a Solar Cell Capacitance Simulator. The device on stainless-steel showed a slightly lower performance than the rigid approach, due to additional challenges of processing steel substrates, even though scanning transmission electron microscopy did not show clear evidence of impurity diffusion. Notwithstanding, time-resolved photoluminescence results strongly suggested elemental diffusion from the flexible substrate. Nevertheless, bending tests on the stainless-steel device demonstrated the mechanical stability of the CIGS-based device.
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| 6. |
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| 7. |
- Salome, Pedro M. P., et al.
(författare)
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Incorporation of Na in Cu(In,Ga)Se-2 Thin-Film Solar Cells : A Statistical Comparison Between Na From Soda-Lime Glass and From a Precursor Layer of NaF
- 2014
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Ingår i: IEEE Journal of Photovoltaics. - 2156-3381 .- 2156-3403. ; 4:6, s. 1659-1664
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Tidskriftsartikel (refereegranskat)abstract
- The presence of Na in Cu(In,Ga)Se-2 layers increases the electrical performance of this type of thin- film solar cell. A detailed comparison of incorporating Na in the CIGS layer by two different methods is performed by evaluating several hundred devices fabricated under similar conditions. The firstmethod is based on the conventionally used Na diffusion from the soda-lime glass substrate, whereas the second method is based on a NaF precursor layer deposited on a Mo- coated alkali- free glass substrate. The sample where Na is introduced by using a NaF precursor layer shows an orientation weighted toward (2 0 4)/(2 2 0) and a net acceptor concentration of 3.4 x 10(16) cm(-3), while SLG shows a (1 1 2) orientation with a 2.9 x 10(16) cm(-3) acceptor concentration. Both sample types show close identical elemental depth profiles, morphology, and electrical performance.
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| 8. |
- Salome, Pedro M. P., et al.
(författare)
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The effect of high growth temperature on Cu(In,Ga)Se-2 thin film solar cells
- 2014
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Ingår i: Solar Energy Materials and Solar Cells. - : Elsevier BV. - 0927-0248 .- 1879-3398. ; 123, s. 166-170
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Tidskriftsartikel (refereegranskat)abstract
- The morphological, elemental distribution and electrical performance effects of increasing the Cu(In,Ga) Se-2 (CIGS) growth substrate temperature are studied. While the increased substrate growth temperature with no other modifications led to increased CIGS grain size, it also resulted in depth profile flattening of the [Ga]/([Ga]+[In]) ratio. Tuning the Ga profile in the high temperature process led to a more desirable [Ga]/([Ga]+[In]) depth profile and allowed a comparison between high and standard temperature. Devices prepared at higher temperature showed an improved grain size and the electrical performance is very similar to that of the reference sample prepared at a standard temperature.
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| 9. |
- Aboulfadl, Hisham, 1986, et al.
(författare)
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Alkali Dispersion in (Ag,Cu)(In,Ga)Se2 Thin Film Solar Cells - Insight from Theory and Experiment
- 2021
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Ingår i: ACS Applied Materials & Interfaces. - : American Chemical Society (ACS). - 1944-8252 .- 1944-8244. ; 13:6, s. 7188-7199
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Tidskriftsartikel (refereegranskat)abstract
- Silver alloying of Cu(In,Ga)Se2 absorbers for thin film photovoltaics offers improvements in open-circuit voltage, especially when combined with optimal alkali-treatments and certain Ga concentrations. The relationship between alkali distribution in the absorber and Ag alloying is investigated here, combining experimental and theoretical studies. Atom probe tomography analysis is implemented to quantify the local composition in grain interiors and at grain boundaries. The Na concentration in the bulk increases up to ∼60 ppm for [Ag]/([Ag] + [Cu]) = 0.2 compared to ∼20 ppm for films without Ag and up to ∼200 ppm for [Ag]/([Ag] + [Cu]) = 1.0. First-principles calculations were employed to evaluate the formation energies of alkali-on-group-I defects (where group-I refers to Ag and Cu) in (Ag,Cu)(In,Ga)Se2 as a function of the Ag and Ga contents. The computational results demonstrate strong agreement with the nanoscale analysis results, revealing a clear trend of increased alkali bulk solubility with the Ag concentration. The present study, therefore, provides a more nuanced understanding of the role of Ag in the enhanced performance of the respective photovoltaic devices.
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| 10. |
- Aboulfadl, Hisham, et al.
(författare)
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Microstructural Characterization of Sulfurization Effects in Cu(In,Ga)Se2 Thin Film Solar Cells
- 2019
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Ingår i: Microscopy and Microanalysis. - : CAMBRIDGE UNIV PRESS. - 1435-8115 .- 1431-9276. ; 25:2, s. 532-538
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Tidskriftsartikel (refereegranskat)abstract
- Surface sulfurization of Cu(In,Ga)Se 2 (CIGSe) absorbers is a commonly applied technique to improve the conversion efficiency of the corresponding solar cells, via increasing the bandgap towards the heterojunction. However, the resulting device performance is understood to be highly dependent on the thermodynamic stability of the chalcogenide structure at the upper region of the absorber. The present investigation provides a high-resolution chemical analysis, using energy dispersive X-ray spectrometry and laser-pulsed atom probe tomography, to determine the sulfur incorporation and chemical re-distribution in the absorber material. The post-sulfurization treatment was performed by exposing the CIGSe surface to elemental sulfur vapor for 20 min at 500°C. Two distinct sulfur-rich phases were found at the surface of the absorber exhibiting a layered structure showing In-rich and Ga-rich zones, respectively. Furthermore, sulfur atoms were found to segregate at the absorber grain boundaries showing concentrations up to ∼7 at% with traces of diffusion outwards into the grain interior.
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| 11. |
- Bayrak Pehlivan, Ilknur, et al.
(författare)
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The climatic response of thermally integrated photovoltaic-electrolysis water splitting using Si and CIGS combined with acidic and alkaline electrolysis
- 2020
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Ingår i: Sustainable Energy & Fuels. - : ROYAL SOC CHEMISTRY. - 2398-4902. ; 4:12, s. 6011-6022
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Tidskriftsartikel (refereegranskat)abstract
- The Horizon 2020 project PECSYS aims to build a large area demonstrator for hydrogen production from solar energy via integrated photovoltaic (PV) and electrolysis systems of different types. In this study, Si- and CIGS-based photovoltaics are developed together with three different electrolyzer systems for use in the corresponding integrated devices. The systems are experimentally evaluated and a general model is developed to investigate the hydrogen yield under real climatic conditions for various thin film and silicon PV technologies and electrolyser combinations. PV characteristics using a Si heterojunction (SHJ), thin film CuInxGa1-xSe2, crystalline Si with passivated emitter rear totally diffused and thin film Si are used together with temperature dependent catalyst load curves from both acidic and alkaline approaches. Electrolysis data were collected from (i) a Pt-IrO2-based acidic electrolysis system, and (ii) NiMoW-NiO-based and (iii) Pt-Ni foam-based alkaline electrolysis systems. The calculations were performed for mid-European climate data from Julich, Germany, which will be the installation site. The best systems show an electricity-to-hydrogen conversion efficiency of 74% and over 12% solar-to-hydrogen (STH) efficiencies using both acidic and alkaline approaches and are validated with a smaller lab scale prototype. The results show that the lower power delivered by all the PV technologies under low irradiation is balanced by the lower demand for overpotentials for all the electrolysis approaches at these currents, with more or less retained STH efficiency over the full year if the catalyst area is the same as the PV area for the alkaline approach. The total yield of hydrogen, however, follows the irradiance, where a yearly hydrogen production of over 35 kg can be achieved for a 10 m(2) integrated PV-electrolysis system for several of the PV and electrolyser combinations that also allow a significant (100-fold) reduction in necessary electrolyser area for the acidic approach. Measuring the catalyst systems under intermittent and ramping conditions with different temperatures, a 5% lowering of the yearly hydrogen yield is extracted for some of the catalyst systems while the Pt-Ni foam-based alkaline system showed unaffected or even slightly increased yearly yield under the same conditions.
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| 12. |
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| 13. |
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| 14. |
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| 15. |
- Igalson, M., et al.
(författare)
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Concentration of defects responsible for persistent photoconductivity in Cu (In,Ga)Se-2 : Dependence on material composition
- 2019
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Ingår i: Thin Solid Films. - : ELSEVIER SCIENCE SA. - 0040-6090 .- 1879-2731. ; 669, s. 600-604
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Tidskriftsartikel (refereegranskat)abstract
- Persistent photoconductivity (PPC) in thin Cu(In,Ga)Se-2 films is discussed within a model of relaxing defects acting as donors or acceptors depending on their configurational and charge state. The aim of this work is to identify the factors related to technological processes which affect the magnitude of PPC. We established a method of evaluation of the concentration of metastable defects in thin Cu(In,Ga)Se-2 films relating it to the position of the Fermi level in thermodynamic equilibrium and used it to compare and discuss the impact of preparation details on the PPC value. The main result is that deviation from Cu/(Ga + In) stoichiometry does not change the concentration of metastable defects. Post deposition annealing in selenium affects the PPC depending on the presence of sodium during the treatment, while the impact of sodium itself on the metastable defect concentration apparently depends on whether it is present during the Cu(In,Ga)Se-2 deposition process or whether it is supplied during post-deposition treatment.
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| 16. |
- Keller, Jan, et al.
(författare)
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On the Paramount Role of Absorber Stoichiometry in (Ag,Cu)(In,Ga)Se2 Wide‐Gap Solar Cells
- 2020
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Ingår i: Solar RRL. - : Wiley. - 2367-198X. ; 4:12
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Tidskriftsartikel (refereegranskat)abstract
- This contribution evaluates the effect of absorber off‐stoichiometry in wide‐gap (Ag,Cu)(In,Ga)Se2 (ACIGS) solar cells. It is found that ACIGS films show an increased tendency to form ordered vacancy compounds (OVCs) with increasing Ga and Ag contents. Very little tolerance to off‐stoichiometry is detected for absorber compositions giving the desired properties of 1) an optimum bandgap (EG) for a top cell in tandem devices (EG = 1.6–1.7 eV) and at the same time 2) a favorable band alignment with a CdS buffer layer. Herein, massive formation of either In‐ or Ga‐enriched OVC patches is found for group I‐poor ACIGS. As a consequence, carrier transport and charge collection are significantly impeded in corresponding solar cells. The transport barrier appears to be increasing with storage time, questioning the long‐term stability of wide‐gap ACIGS solar cells. Furthermore, the efficiency of samples with very high Ga and Ag contents depends on the voltage sweep direction. It is proposed that the hysteresis behavior is caused by a redistribution of mobile Na ions in the 1:1:2 absorber lattice upon voltage bias. Finally, a broader perspective on OVC formation in the ACIGS system is provided and fundamental limitations for wide‐gap ACIGS solar cells are discussed.
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| 17. |
- Khavari, Faraz, et al.
(författare)
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Comparison of Sulfur Incorporation into CuInSe(2)and CuGaSe(2)Thin-Film Solar Absorbers
- 2020
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Ingår i: Physica Status Solidi (a) applications and materials science. - : WILEY-V C H VERLAG GMBH. - 1862-6300 .- 1862-6319. ; 217:22
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Tidskriftsartikel (refereegranskat)abstract
- Herein, sulfurization of CuInSe(2)and CuGaSe2(CGSe) absorber layers is compared to improve the understanding of sulfur incorporation into Cu(In,Ga)Se(2)films by annealing in a sulfur atmosphere. It is found for Cu-poor CuInSe(2)that for an annealing temperature of 430 degrees C, sulfur is incorporated into the surface of the absorber and forms an inhomogeneous CuIn(S,Se)(2)layer. In addition, at 530 degrees C, a surface layer of CuInS(2)is formed. In contrast, for Cu-poor CuGaSe(2)samples, S can only be introduced at 530 degrees C, mainly forming an alloy of CuGa(S,Se)(2), where no closed CuGaS(2)layer is found. In Cu-rich CuGaSe(2)samples, however, selenium is substituted by S already at 330 degrees C, which can be explained by a rapid phase transformation of Cu2 - xSe into Cu2 - x(S,Se). This transformation facilitates S in-diffusion and catalyzes CuGa(S,Se)(2)formation, likewise that previously reported to occur in CuInSe2. Finally, the Cu-poor CuInSe(2)solar cell performance is improved by the sulfurization step at 430 degrees C, whereas for the 530 degrees C sample, a decreasing fill factor and short-circuit current density are observed, indicating lower diffusion length accompanied by possible formation of an electron transport barrier. In contrast, the electrical characteristics deteriorate for all sulfurized Cu-poor CuGaSe(2)cells.
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| 18. |
- Khavari, Faraz, et al.
(författare)
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Post‐deposition sulfurization of CuInSe2 solar absorbers by employing sacrificial CuInS2 precursor layers
- 2022
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Ingår i: Physica Status Solidi (a) applications and materials science. - : John Wiley & Sons. - 1862-6300 .- 1862-6319. ; 219:5
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Tidskriftsartikel (refereegranskat)abstract
- Herein, a new route of sulfur grading in CuInSe2 (CISe) thin-film solar absorbers by introducing an ultrathin (<50 nm) sacrificial sputtered CuInS2 (CIS) layer on top of the CISe. Different CIS top layer compositions (Cu-poor to Cu-rich) are analyzed, before and after a high-temperature treatment in selenium (Se)- or selenium+sulfur (SeS)-rich atmospheres. An [S]/([S] + [Se]) grading from the surface into the bulk of the Se- and SeS-treated samples is observed, and evidence of the formation of a mixed CuIn(S,Se)2 phase by Raman analysis and X-ray diffraction is provided. The optical bandgap from quantum efficiency measurements of solar cells is increased from 1.00 eV for the CISe reference to 1.14 and 1.30 eV for the Se- and SeS-treated bilayer samples, respectively. A ≈150 mV higher VOC is observed for the SeS-treated bilayer sample, but the cell exhibits blocking characteristics resulting in lower efficiency as compared with the CISe reference. This blocking is attributed to an internal electron barrier at the interface to the sulfur-rich surface layer. The difference in reaction routes and possible ways to improve the developed sulfurization process are discussed.
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| 19. |
- Larsen, Jes K., et al.
(författare)
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Experimental and Theoretical Study of Stable and Metastable Phases in Sputtered CuInS2
- 2022
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Ingår i: Advanced Science. - : Wiley. - 2198-3844. ; 9:23
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Tidskriftsartikel (refereegranskat)abstract
- The chalcopyrite Cu(In,Ga)S2 has gained renewed interest in recent years due to the potential application in tandem solar cells. In this contribution, a combined theoretical and experimental approach is applied to investigate stable and metastable phases forming in CuInS2 (CIS) thin films. Ab initio calculations are performed to obtain formation energies, X-ray diffraction (XRD) patterns, and Raman spectra of CIS polytypes and related compounds. Multiple CIS structures with zinc-blende and wurtzite-derived lattices are identified and their XRD/Raman patterns are shown to contain overlapping features, which could lead to misidentification. Thin films with compositions from Cu-rich to Cu-poor are synthesized via a two-step approach based on sputtering from binary targets followed by high-temperature sulfurization. It is discovered that several CIS polymorphs are formed when growing the material with this approach. In the Cu-poor material, wurtzite CIS is observed for the first time in sputtered thin films along with chalcopyrite CIS and CuAu-ordered CIS. Once the wurtzite CIS phase has formed, it is difficult to convert into the stable chalcopyrite polymorph. CuIn5S8 and NaInS2 accommodating In-excess are found alongside the CIS polymorphs. It is argued that the metastable polymorphs are stabilized by off-stoichiometry of the precursors, hence tight composition control is required.
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| 20. |
- Platzer-Bjorkman, Charlotte, et al.
(författare)
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Diffusion of Fe and Na in co-evaporated Cu(In, Ga) Se-2 devices on steel substrates
- 2013
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Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 535, s. 188-192
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Tidskriftsartikel (refereegranskat)abstract
- In this work we study impurity diffusion into Cu(In, Ga) Se-2 from stainless steel substrates with and without Cr diffusion barriers using secondary ion mass spectrometry. For these substrate configurations we compare cases with and without adding NaF as a sodium precursor. A clear increase in impurity diffusion from the substrate is observed for samples with NaF. Devices made using our micro pilot line show the expected correlation between Fe content, Na content and efficiency, but the highest device efficiency obtained for steel substrates is still slightly below that of the glass substrate reference. We discuss reasons for the observed device performance.
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| 21. |
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| 22. |
- Sopiha, Kostiantyn, et al.
(författare)
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Off-stoichiometry in I-III-VI2 chalcopyrite absorbers : a comparative analysis of structures and stabilities
- 2022
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Ingår i: Faraday discussions. - : Royal Society of Chemistry (RSC). - 1359-6640 .- 1364-5498. ; 239:0, s. 357-374
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Tidskriftsartikel (refereegranskat)abstract
- Chalcopyrite Cu(In,Ga)Se-2 (CIGSe) solar absorbers are renowned for delivering high solar power conversion efficiency despite containing high concentration of lattice defects amounting to copper deficiencies of several atomic percent. The unique ability to incorporate this deficiency without triggering decomposition (i.e. "tolerance to off-stoichiometry") is viewed by many as the key feature of CIGSe. In principle, this property could benefit any solar absorber, but remarkably little attention has been paid to it so far. In this study, we assess the tolerance to off-stoichiometry of thin-film photovoltaic materials by carrying out ab initio analysis of group-I-poor ordered defect compounds (ODCs) in the extended family of I-III-VI systems (where I = Cu, Ag, III = Al, Ga, In, and VI = S, Se, Te). We analyze convex hulls and structural evolution with respect to group-I content, link them with experimental phase diagrams, and determine two empirical principles for the future identification of solar energy materials with high tolerance to off-stoichiometry. Practical implications for the deposition of I-III-VI absorbers are also discussed in light of our computational results and recent experimental findings.
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| 23. |
- Sopiha, Kostiantyn, et al.
(författare)
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Thermodynamic stability, phase separation and Ag grading in (Ag,Cu)(In,Ga)Se-2 solar absorbers
- 2020
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Ingår i: Journal of Materials Chemistry A. - : Royal Society of Chemistry. - 2050-7488 .- 2050-7496. ; 8:17, s. 8740-8751
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Tidskriftsartikel (refereegranskat)abstract
- Gallium alloying and grading in Cu(In,Ga)Se-2 (CIGS) are well-established strategies for improving performance of thin-film solar cells by tailoring band profiles within the absorber. Similarly, Ag incorporation is considered to be an effective complementary route towards further advancement of the field. Herein, we explore thermodynamics of the formation of (Ag,Cu)(In,Ga)Se-2 (ACIGS) alloy. Using first-principles methods, we reveal the existence of a miscibility gap in the Ga-rich alloys at temperatures close to those employed for the co-evaporation growth. We demonstrate that this property can result in phase separation and the formation of Ag gradients throughout the film thickness. We prove experimentally that the phase separation can indeed occur during low-temperature growth and/or post-deposition treatments. Furthermore, we uncover the anticorrelation between Ag and Ga contents, and demonstrate thermodynamically-driven formation of [Ag]/([Ag] + [Cu]) gradients in films with a steep [Ga]/([Ga] + [In]) profile. Finally, we discuss how these phenomena can influence solar cell devices. The presented results are expected to provide fundamental insight into the physics of growth and processing of ACIGS absorbers, which could be utilized to further boost the efficiency of thin-film solar cells.
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| 24. |
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| 25. |
- Urbaniak, A., et al.
(författare)
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Defect levels in Cu(In,Ga)Se-2 studied using capacitance and photocurrent techniques
- 2016
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Ingår i: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 28:21
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Tidskriftsartikel (refereegranskat)abstract
- This work contributes to the discussion on defect levels in Cu(In, Ga)Se-2 photovoltaic material. CuInSe2- and Cu(In, Ga)Se-2-based Schottky junctions, solar cells and thin films were investigated using complementary capacitance and current spectroscopic techniques. Depending on the applied technique and type of investigated structure, six different signals were observed. Out of the signals identified, three were ascribed to responses from bulk defects-two electron and one hole trap. The remainder were discussed in light of available in-literature models including carrier mobility freeze-out and non-ohmic back junction.
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| 26. |
- Urbaniak, A., et al.
(författare)
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Signatures of extended defects in Cu(In,Ga)Se-2 observed using capacitance spectroscopy techniques
- 2019
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Ingår i: Journal of Physics and Chemistry of Solids. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0022-3697 .- 1879-2553. ; 134, s. 58-63
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Tidskriftsartikel (refereegranskat)abstract
- This work concerns the interpretation of defect spectroscopy signals in CuInSe2-and Cu(In,Ga)Se-2-based Schottky junctions and thin films, which are investigated using capacitance- and current-based techniques. Two common signals are distinguished. It is shown here that the activation energies and consequently the emission rates vary between the samples and are strongly correlated with the hole concentration in the material. Models that can account for these changes are discussed. Based on deep-level transient spectroscopy and conductivity measurements, we present arguments for the validity of the existing models and discuss the hypothesis that the observable signals may originate from extended defects in Cu(In,Ga)Se-2.
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