| 1. |
- Joffrin, E., et al.
(författare)
-
Overview of the JET preparation for deuterium-tritium operation with the ITER like-wall
- 2019
-
Ingår i: Nuclear Fusion. - : IOP Publishing. - 1741-4326 .- 0029-5515. ; 59:11
-
Forskningsöversikt (refereegranskat)abstract
- For the past several years, the JET scientific programme (Pamela et al 2007 Fusion Eng. Des. 82 590) has been engaged in a multi-campaign effort, including experiments in D, H and T, leading up to 2020 and the first experiments with 50%/50% D-T mixtures since 1997 and the first ever D-T plasmas with the ITER mix of plasma-facing component materials. For this purpose, a concerted physics and technology programme was launched with a view to prepare the D-T campaign (DTE2). This paper addresses the key elements developed by the JET programme directly contributing to the D-T preparation. This intense preparation includes the review of the physics basis for the D-T operational scenarios, including the fusion power predictions through first principle and integrated modelling, and the impact of isotopes in the operation and physics of D-T plasmas (thermal and particle transport, high confinement mode (H-mode) access, Be and W erosion, fuel recovery, etc). This effort also requires improving several aspects of plasma operation for DTE2, such as real time control schemes, heat load control, disruption avoidance and a mitigation system (including the installation of a new shattered pellet injector), novel ion cyclotron resonance heating schemes (such as the three-ions scheme), new diagnostics (neutron camera and spectrometer, active Alfven eigenmode antennas, neutral gauges, radiation hard imaging systems...) and the calibration of the JET neutron diagnostics at 14 MeV for accurate fusion power measurement. The active preparation of JET for the 2020 D-T campaign provides an incomparable source of information and a basis for the future D-T operation of ITER, and it is also foreseen that a large number of key physics issues will be addressed in support of burning plasmas.
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| 2. |
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| 3. |
- Bombarda, F., et al.
(författare)
-
Runaway electron beam control
- 2019
-
Ingår i: Plasma Physics and Controlled Fusion. - : IOP Publishing. - 1361-6587 .- 0741-3335. ; 61:1
-
Tidskriftsartikel (refereegranskat)
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| 4. |
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| 5. |
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| 6. |
-
- 2018
-
Ingår i: Nuclear Fusion. - : IOP Publishing. - 1741-4326 .- 0029-5515. ; 58:1
-
Forskningsöversikt (refereegranskat)
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| 7. |
- Jeppson, Kjell, 1947, et al.
(författare)
-
Test structures for studying flexible interconnect supported by carbon nanotube scaffolds
- 2017
-
Ingår i: IEEE International Conference on Microelectronic Test Structures. ; 2017
-
Konferensbidrag (refereegranskat)abstract
- Due to their flexibility and compatibility withsilicon devices, the use of carbon nanotubes as scaffolds for metal interconnect in flexible and wearable electronics has been proposed. This paper examines the performance of dual-height carbon nanotubes as flexible scaffolds for horizontal and vertical interconnects. For this purpose, a number of test structures have been designed and fabricated and their electrical and mechanical performance been investigated.
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| 8. |
- Jiang, Di, 1983, et al.
(författare)
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A flexible and stackable 3D interconnect system using growth-engineered carbon nanotube scaffolds
- 2017
-
Ingår i: Flexible and Printed Electronics. - : IOP Publishing. - 2058-8585. ; 2:2
-
Tidskriftsartikel (refereegranskat)abstract
- One of the critical challenges for realizing flexible electronic systems for a wide range of applications is the development of materials for flexible and stackable interconnects. We propose and demonstrate a three-dimensional (3D)interconnect structure embedded in a polymeric substrate using metal-coated carbon nanotube (CNT)scaffolds. By using two different underlayer materials for the catalyst, onestep synthesis of a dual-height CNT interconnect scaffold was realized. The CNT scaffolds serve as flexible cores for both annular metal through-substrate-vias and for horizontal metal interconnect. The 3D-CNT network was fabricated on a silicon substrate, and once the scaffolds were covered by metal, they were embedded in a polymer serving as a flexible substrate after peel-off from the silicon substrate. The 3D-CNT interconnect network was exposed to mechanical bending and stretching tests while monitoring its electrical properties. Even after 300 cycles no significant increase of resistances was found. Electrically there is a trade-off between flexibility and conductivity due to the surface roughness of the scaffold. However, this is to some extent alleviated by the metalized sidewalls giving the horizontal wires a cross-sectional area larger than indicated by their footprint. For gold wires 200 nm thick, measurements indicated a resistivity of 18 μΩ.cm, a value less than one order of magnitude larger than that of bulk gold, and a value that is expected to improve as technology improves. The mechanical properties of the metalized scaffolds were simulated using a finite element model. The potential scale-up capability of the proposed 3D-CNT network was demonstrated by the stacking of two such polymer-embedded interconnect systems.
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| 9. |
- Mu, Wei, 1985, et al.
(författare)
-
Controllable and fast synthesis of bilayer graphene by chemical vapor deposition on copper foil using a cold wall reactor
- 2016
-
Ingår i: Chemical Engineering Journal. - : Elsevier BV. - 1385-8947. ; 304:15 November 2016, s. 106-114
-
Tidskriftsartikel (refereegranskat)abstract
- Bilayer graphene is attractive for digital device applications due to the appearance of a bandgap under application of an electrical displacement field. Controllable and fast synthesis of bilayer graphene on copper by chemical vapor deposition is considered a crucial process from the perspective of industrial applications. Here, a systematic investigation of the influence of process parameters on the growth of bilayer graphene by chemical vapor deposition in a low pressure cold wall reactor is presented. In this study, the initial process stages have been of particular interest. We have found that the influence of the hydrogen partial pressure on synthesis is completely the opposite from that found for traditional tubular quartz CVD in terms of its influence on the graphene growth rate. H2/CH4 ratio was also found to effectively influence the properties of the synthesized bilayer graphene in terms of its atomic structure, whether it be AB-stacked or misoriented. Different pre-treatments of the copper foil, in combination with different annealing processes, were used to investigate the nucleation process with the aim of improving the controllability of the synthesis process. Based on an analysis of the nucleation activity, adsorption-diffusion and gas-phase penetration were employed to illustrate the synthesis mechanism of bilayer graphene on copper foil. After optimization of the synthesis process, large areas, up to 90% of a copper foil, were covered by bilayer graphene within 15 minutes. The total process time is only 45 minutes, including temperature ramp-up and cool-down by using a low pressure cold wall CVD reactor.
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| 10. |
- Mu, Wei, 1985, et al.
(författare)
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Double-Densified VerticallyAligned Carbon Nanotube Bundles for Application in 3D Integration High Aspect Ratio TSV Interconnects
- 2016
-
Ingår i: Proceedings - Electronic Components and Technology Conference. - 0569-5503. - 9781509012046 ; 2016-August, s. 211-216
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Konferensbidrag (refereegranskat)abstract
- The treatment of densification by vapor on pristineMWCNT bundles are necessary to improve the effective area of the CNT TSV. However, the CNT bundles might tilt partly because of the non-uniform densification at root of the bundle, especially when it comes to the high aspect ratio CNT bundles. In order to solve these problems, a double densification process has been proposed and developed here. First of all, the shape of partial densified CNT bundles were optimized as a function of time. After several steps such as transferring of partial densified CNT bundles into the via, second densification, epoxy filling and chemical mechanical polishing, the CNT filled TSV with aspect ratio of 10 was achieved. The current voltage response of the CNT TSV interconnection indicated good electrical connection was formed. The resistivity of CNT bundles in via was calculated to be around 2-3 milli-ohmcm.
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| 11. |
- Mu, Wei, 1985, et al.
(författare)
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Tape-Assisted Transfer of Carbon Nanotube Bundles for Through-Silicon-Via Applications
- 2015
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Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 1543-186X .- 0361-5235. ; 44:8, s. 2898-2907
-
Tidskriftsartikel (refereegranskat)abstract
- Robust methods for transferring vertically aligned carbon nanotube (CNT) bundles into through-silicon vias (TSVs) are needed since CNT growth is not compatible with complementary metal–oxide–semiconductor (CMOS) technology due to the temperature needed for growing high-quality CNTs (∼700°C). Previous methods are either too complicated or not robust enough, thereby offering too low yields. Here, a facile transfer method using tape at room temperature is proposed and experimentally demonstrated. Three different kinds of tape, viz. thermal release tape, Teflon tape, and Scotch tape, were applied as the medium for CNT transfer. The CNT bundle was adhered to the tape through a flip-chip bonder, and the influence of the bonding process on the transfer results was investigated. Two-inch wafer-scale transfer of CNT bundles was realized with yields up to 97% demonstrated. After transfer, the use of several different polymers was explored for filling the gap between the transferred CNT bundle and the sidewalls of the TSV openings to improve the filling performance. The current–voltage characteristic of the CNT TSVs indicated good electrical performance, and by measuring the via resistance as a function of via thickness, contact resistances could be eliminated and an intrinsic CNT resistivity of 1.80 mΩ cm found.
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| 12. |
- Sun, Shuangxi, 1986, et al.
(författare)
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Vertically aligned CNT-Cu nano-composite material for stacked through-silicon-via interconnects
- 2016
-
Ingår i: Nanotechnology. - : IOP Publishing. - 1361-6528 .- 0957-4484. ; 27:33, s. Art no335705-
-
Tidskriftsartikel (refereegranskat)abstract
- For future miniaturization of electronic systems using 3D chip stacking, new fine-pitch materials for through-silicon-via (TSV) applications are likely required. In this paper, we propose a novel carbon nanotube (CNT)/copper nanocomposite material consisting of high aspect ratio, vertically aligned CNT bundles coated with copper. These bundles, consisting of hundreds of tiny CNTs, were uniformly coated by copper through electroplating, and aspect ratios as high as 300: 1 were obtained. The resistivity of this nanomaterial was found to be as low as similar to 10(-8) Omega m, which is of the same order of magnitude as the resistivity of copper, and its temperature coefficient was found to be only half of that of pure copper. The main advantage of the composite TSV nanomaterial is that its coefficient of thermal expansion (CTE) is similar to that of silicon, a key reliability factor. A finite element model was set up to demonstrate the reliability of this composite material and thermal cycle simulations predicted very promising results. In conclusion, this composite nanomaterial appears to be a very promising material for future 3D TSV applications offering both a low resistivity and a low CTE similar to that of silicon.
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| 13. |
- Zhang, Yong, 1982, et al.
(författare)
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2D HEAT DISSIPATION MATERIALS FOR MICROELECTRONICS COOLING APPLICATIONS
- 2016
-
Ingår i: China Semiconductor Technology International Conference 2016, CSTIC 2016. - 9781467388047
-
Konferensbidrag (refereegranskat)abstract
- The need for faster and smaller, as well as more reliable and efficient consumer electronic products has resulted in microelectronic components that produce progressively more heat. The resultant reliability issues from the increased heat flux are serious and hinder technological development. One solution for microelectronics cooling applications is 2D materials applied as heat spreaders and these include monolayer graphene, graphene based films, and monolayer hexagonal boron nitride and BN based films. In addition, thermal performances of the graphene heat spreader were also studied under different packaging structures, including wire bonding, cooling fins and flip chips. Finally, 2D hexagonal Boron nitride (h-BN) heat spreaders, fabricated by different methods, had their heat dissipation performances characterized by different thermal characterization methods, such as resistance temperature detector (RTD) and Infrared (IR) methods. In conclusion, these new novel 2D materials developed show great potential for microelectronics cooling applications.
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| 14. |
-
- 2018
-
Ingår i: Nuclear Fusion. - : IOP Publishing. - 1741-4326 .- 0029-5515. ; 58:9
-
Tidskriftsartikel (refereegranskat)
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| 15. |
- Bao, Jie, et al.
(författare)
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Synthesis and Applications of Two-Dimensional Hexagonal Boron Nitride in Electronics Manufacturing
- 2016
-
Ingår i: Electronic Materials Letters. - : Springer Science and Business Media LLC. - 1738-8090 .- 2093-6788. ; 12:1, s. 1-16
-
Forskningsöversikt (refereegranskat)abstract
- In similarity to graphene, two-dimensional (2D) hexagonal boron nitride (hBN) has some remarkable properties, such as mechanical robustness and high thermal conductivity. In addition, hBN has superb chemical stability and it is electrically insulating. 2D hBN has been considered a promising material for many applications in electronics, including 2D hBN based substrates, gate dielectrics for graphene transistors and interconnects, and electronic packaging insulators. This paper reviews the synthesis, transfer and fabrication of 2D hBN films, hBN based composites and hBN-based van der Waals heterostructures. In particular, this review focuses on applications in manufacturing electronic devices where the insulating and thermal properties of hBN can potentially be exploited. 2D hBN and related composite systems are emerging as new and industrially important materials, which could address many challenges in future complex electronics devices and systems.
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| 16. |
- Bao, Jie, 1982, et al.
(författare)
-
Two-dimensional hexagonal boron nitride as lateral heat spreader in electrically insulating packaging
- 2016
-
Ingår i: Journal of Physics D: Applied Physics. - : IOP Publishing. - 1361-6463 .- 0022-3727. ; 49:July 2016, s. 265501-
-
Tidskriftsartikel (refereegranskat)abstract
- The need for electrically insulating materials with a high in-plane thermal conductivity for lateral heat spreading applications in electronic devices has intensified studies of layered hexagonal boron nitride (h-BN) films. Due to its physicochemical properties, h-BN can be utilised in power dissipating devices such as an electrically insulating heat spreader material for laterally redistributing the heat from hotspots caused by locally excessive heat flux densities. In this study, two types of boron nitride based heat spreader test structures have been assembled and evaluated for heat dissipation. The test structures separately utilised a few-layer h-BN film with and without graphene enhancement drop coated onto the hotspot test structure. The influence of the h-BN heat spreader films on the temperature distribution across the surface of the hotspot test structure was studied at a range of heat flux densities through the hotspot. It was found that the graphene-enhanced h-BN film reduced the hotspot temperature by about 8–10°C at a 1000 W/cm2 heat flux density, a temperature decrease significantly larger than for h-BN film without graphene enhancement. Finite element simulations of the h-BN film predict that further improvements in heat spreading ability are possible if the thermal contact resistance between the film and test chip are minimised.
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| 17. |
- Brinkfeldt, Klas, et al.
(författare)
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Design and Fabrication of a SiC-Based Power Module with Double-Sided Cooling for Automotive Applications
- 2016
-
Ingår i: Lecture Notes in Mobility. - Cham : Springer International Publishing. - 2196-5544 .- 2196-5552. ; , s. 157-171, s. 157-172
-
Bokkapitel (övrigt vetenskapligt/konstnärligt)abstract
- The electrification of drive trains combined with special requirements of the automotive and heavy construction equipment applications drives the development of small, highly integrated and reliable power inverters. To minimize the volume and increase the reliability of the power switching devices a module consisting of SiC devices with double sided cooling capability has been developed. There are several benefits related to cooling the power devices on both sides. The major improvement is the ability to increase the power density, and thereby reduce the number of active switching devices required which in turn reduces costs. Other expected benefits of more efficient cooling are reductions in volume and mass per power ratio. Alternatively, improved reliability margins due to lower temperature swings during operation are can be expected. Removing the wire bonds on the top side of the devices is expected to improve the reliability regardless, since wire bonds are known to be one of the main limitations in power switching devices. In addition, it is possible to design the package with substantially lower inductance, which can allow faster switching of the devices. In this paper the design, simulations and fabrication process of a double sided SiC-based power module are presented.
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| 18. |
- Brinkfeldt, Klas, et al.
(författare)
-
Model verification of heat exchangers in a flow test rig
- 2015
-
Ingår i: 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2015. - : Institute of Electrical and Electronics Engineers Inc.. - 9781479999507 ; , s. 7103135-
-
Konferensbidrag (refereegranskat)abstract
- In power electronics, more efficient removal of heat from the junction of power devices leads to a higher power rating per die, which in turn leads to fewer die and reduced system volume. Since temperature is a main driver in expected failure modes an increase in cooling capability can also enhance margins of the device reliability. Previously, CFD simulations of two novel heat exchanger designs that will be used in a power module with double sided cooling have been reported on. The heat exchangers are fabricated by direct 3D manufacturing of copper structures, which allows almost complete freedom in geometric design. Two novel geometries of heat exchanger cooling structures have previously been modeled in terms of thermal performance and expected pressure drop. A flow rig has been designed and calibrated to measure thermal performance and pressure drops of these heat sinks. For calibration purposes, measurements of the thermal response of wave structured and unstructured heat sinks are reported here. The results show that, as expected, the heat sink temperatures are lower for all flow rates in the wavestructured geometry. A thermal CFO model accurately predicts the behavior of the temperature difference between inlet and outlet versus flow rate, but predicts higher absolute temperature values. It was also found that the model underestimates the pressure drop over the tested heat sillies. The pressure drop across a novel pine cone geometry heat sink fabricated by additive manufacturing methods was also measured. Comparisons to a reduced model, which neglects everything before the inlet and after the outlet of the tested device, showed that the behavior of this pine structured heat sink was not predicted correctly. The pressure drop increased more rapidly with flow rates in the model than in the measurements. The main source of error in the measurements and simulations comes from a lack of thermal loading. Future work to improve the flow rig includes possibilities to increase the temperature loading at the bottom of the heat sink under test.
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| 19. |
- Brinkfeldt, Klas, et al.
(författare)
-
Thermo-Mechanical Simulations of SiC Power Modules with Single and Double Sided Cooling
- 2015
-
Ingår i: 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2015. - : Institute of Electrical and Electronics Engineers Inc.. - 9781479999491 - 9781479999507 ; , s. 1 - 7
-
Konferensbidrag (refereegranskat)abstract
- Effectively removing dissipated heat from the switching devices enables a higher current carrying capability per chip area ratio, thus leading to smaller or fewer devices for a given power requirement specification. Further, the use of SiC based devices has proven to increase the efficiency of the system thereby reducing the dissipated heat. Thermal models have been used to compare SiC power modules. Single and double sided cooling have been simulated. The simulated maximum temperatures were 141 °C for the single sided version and 119.7 °C for the double sided version. In addition, the reliability of a single sided module and thermally induced plastic strains of a double sided module have been investigated. A local model of the wire bond interface to the transistor metallization shows a 30/00 maximum increase in plastic strain during the power cycle. Simulations of the creep strain rates in the die attach solder layer for a power cycling loads also shows a 30/00 increase in creep strain per cycle.
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| 20. |
- Chen, Si, 1981, et al.
(författare)
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Sn-3.0Ag-0.5Cu Nanocomposite Solder Reinforced With Bi2Te3 Nanoparticles
- 2015
-
Ingår i: IEEE Transactions on Components, Packaging and Manufacturing Technology. - : Institute of Electrical and Electronics Engineers (IEEE). - 2156-3985 .- 2156-3950. ; 5:8, s. 1186-1196
-
Tidskriftsartikel (refereegranskat)abstract
- Nanocomposite solders are regarded as one of the most promising interconnect materials for the high-density electronic packaging due to their high mechanical strength and fine microstructure. However, the developments of nanocomposite solders have been limited by the inadequate compatibility between nanoparticles and solder matrix with respect to density, hardness, coefficient of thermal expansion, and surface activity. The compatibility issue will lead to a huge loss of nanoparticles from the solder matrix after the reflow soldering process. The thermal fatigue resistance of solder joint will also become degraded. Therefore, aiming to solve this problem, a novel nanocomposite solder consisting of Bi2Te3 semiconductor nanoparticles and Sn-3.0Ag-0.5Cu (SAC305) solder is presented. The effect of nanoparticles on the viscosity of solder paste and the void content of solder bump was first studied. Then, a series of analysis on the composition and microstructure of the solder bump were completed using transmission electron microscopy, X-ray diffraction, inductively coupled plasma-mass spectrometry, scanning electron microscopy, and energy dispersive X-ray spectroscopy. The survival rate of nanoparticles in the solder bump after reflow soldering process reaches as high as 80%. The refined microstructure was observed from the cross section of the nanocomposite solders. The shear test showed that the average mechanical strength of SAC305 solder after the addition of Bi2Te3 nanoparticles was higher. Meanwhile, no thermal fatigue resistance degradation was detected in the nanocomposite solder after 1000 thermal cycles in the range of -40 degrees C to 115 degrees C.
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| 21. |
- Edwards, Michael, 1986, et al.
(författare)
-
Finite element simulation of 2D-based materials as heat spreaders
- 2016
-
Ingår i: IMAPS Nordic Annual Conference 2016 Proceedings. - 9781510827226
-
Konferensbidrag (refereegranskat)abstract
- Since the discovery of graphene, the first discovered 2D material, by Novoselov and Geim in 2004, the field of 2D materials has taken off and about 20 further 2D materials have been found. One of the most promising of these materials for the passive cooling of chips is hBN. HBN has the very unusual combination of being electrically insulating and thermally conductive, which potentially makes it an ideal material for both laterally spreading heat and passivating hotspots on chips. This gives hBN an advantage over graphene, where the chip requires a SiO2 passivation layer to prevent short circuits. To help evaluate the performance of these heat spreading films, a finite element model has been devised to support the experimental work undertaken in various publications. This model has been validated with experimental data and suggests that both graphene-And hBN-based materials have significant potential in lateral heat spreading applications.
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| 22. |
- Edwards, Michael, 1986, et al.
(författare)
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The shear strength of nano-Ag sintered joints and the use of Ag interconnects in the design and manufacture of SiGe-based thermo-electric modules
- 2015
-
Ingår i: Microelectronics and Reliability. - : Elsevier BV. - 0026-2714 .- 1872-941X. ; 55:5, s. 722-732
-
Tidskriftsartikel (refereegranskat)abstract
- Thermo-electric modules (TEMs) can be used to convert heat into electricity by utilizing the Seeback effect. It is now possible to buy BiTe thermo-electric modules that can operate up to temperatures of around 300 °C. However, many applications, such as the harvesting of excess gas turbine heat, may occur at higher temperatures. Therefore, new materials and manufacturing processes need to be developed to produce packaged TEMs that can operate at a maximum operating temperature of 650 °C. Two critical areas in the manufacture of a SiGe TEM are the choice and strength of materials used to both sintered joint the TE material to the rest of the module and the metal used for the interconnects. The interconnection material needs to be sufficiently strong to withstand large temperature fluctuations while maintaining a low contact resistance, as well as being compatible with the nano-Ag sintered joint. Shear force tests of the sintered thermo electrical leg material showed that the joints are brittle when sintered to W metallized AlN substrates are used and ductile fracture behavior when sintered to Cu metallized AlN substrates using the NanoTach K nano silver paste. Almost all of the joints were found to be brittle when using the NachTach X nano silver paste. Shear testing of the sintered joints showed that the X paste joints were variable in strength and stiffness, having a typical Young's modulus between 10 and 100 MPa at room temperature. The K paste joints were stiffer, but had a similar strength as compared to the X paste joints.
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| 23. |
- Han, H. X., et al.
(författare)
-
Functionalization mediates heat transport in graphene nanoflakes
- 2016
-
Ingår i: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723 .- 2041-1723. ; 7
-
Tidskriftsartikel (refereegranskat)abstract
- The high thermal conductivity of graphene and few-layer graphene undergoes severe degradations through contact with the substrate. Here we show experimentally that the thermal management of a micro heater is substantially improved by introducing alternative heat-escaping channels into a graphene-based film bonded to functionalized graphene oxide through amino-silane molecules. Using a resistance temperature probe for in situ monitoring we demonstrate that the hotspot temperature was lowered by similar to 28 degrees C for a chip operating at 1,300 Wcm(-2). Thermal resistance probed by pulsed photothermal reflectance measurements demonstrated an improved thermal coupling due to functionalization on the graphene-graphene oxide interface. Three functionalization molecules manifest distinct interfacial thermal transport behaviour, corroborating our atomistic calculations in unveiling the role of molecular chain length and functional groups. Molecular dynamics simulations reveal that the functionalization constrains the cross-plane phonon scattering, which in turn enhances in-plane heat conduction of the bonded graphene film by recovering the long flexural phonon lifetime.
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| 24. |
- Jiang, Di, 1983, et al.
(författare)
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Embedded Fin-Like Metal/CNT Hybrid Structures for Flexible and Transparent Conductors
- 2016
-
Ingår i: Small. - : Wiley. - 1613-6810 .- 1613-6829. ; 12:11, s. 1521-1526
-
Tidskriftsartikel (refereegranskat)abstract
- In this paper, an embedded fin-like metal-coated carbon nanotube (Fin-M/CNT) structure is demonstrated for flexible and transparent conductor wire applications. Embedded in a polydimethylsiloxane polymeric substrate, Fin-M/CNT wires with a minimum width of 5 μm and a minimum pitch of 10 μm have been achieved. Direct current resistances of single Fin-M/CNT wires, where the supporting CNT structures have been covered by Ti/Al/Au metal coatings of different thicknesses, have been measured. The high aspect ratio of the fin-like structures not only improves the adhesion between the wires and the polymeric substrate, but also yields a low resistance at a small surface footprint. In addition, transparent Fin-M/CNT grid lines with hexagonal patterns, with a sheet resistance of as low as 45 Ω sq−1, have been achieved at an optical transmittance of 88%. The robustness of the Fin-M/CNT structures has been demonstrated in bending tests up to 500 cycles and no significant changes in wire resistances are observed.
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| 25. |
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| 26. |
- Luo, Xin, 1983, et al.
(författare)
-
Unusual tensile behaviour of fibre-reinforced indium matrix composite and its in-situ TEM straining observation
- 2016
-
Ingår i: Acta Materialia. - : Elsevier BV. - 1359-6454. ; 104, s. 109-118
-
Tidskriftsartikel (refereegranskat)abstract
- Indium-based thermal interface materials are superior in thermal management applications of electronic packaging compared to their polymer-based counterparts. However, pure indium has rather low tensile strength resulting in poor reliability. To enhance the mechanical properties of such a material, a new composite consisting of electrospun randomly oriented continuous polyimide fibres and indium was fabricated. The composite has been characterised by tensile tests and in-situ transmission electron microscopy straining observations. It is shown that the composite's ultimate tensile strength at 20 degrees C is five times higher than that of pure indium, and the strength of the composite exceeds the summation of strengths of the individual components. Furthermore, contrary to most metallic matrix materials, the ultimate tensile strength of the composite decreases with the increased strain rate in a certain range. The chemical composition and tensile fracture of the novel composite have been analysed comprehensively by means of scanning transmission electron microscopy and scanning electron microscopy. A strengthening mechanism based on mutually reinforcing structures formed by the indium and surrounding fibres is also presented, underlining the effect of compressing at the fibre/indium interfaces by dislocation pileups and slip pinning.
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| 27. |
- Mu, Wei, 1985, et al.
(författare)
-
Enhanced Cold Wall CVD Reactor Growth of Horizontally Aligned Single-walled Carbon Nanotubes
- 2016
-
Ingår i: Electronic Materials Letters. - : Springer Science and Business Media LLC. - 1738-8090 .- 2093-6788. ; 12:3, s. 329-337
-
Tidskriftsartikel (refereegranskat)abstract
- Synthesis of horizontally-aligned single-walled carbon nanotubes (HA-SWCNTs) by chemical vapor deposition (CVD) directly on quartz seems very promising for the fabrication of future nanoelectronic devices. In comparison to hot-wall CVD, synthesis of HA-SWCNTs in a cold-wall CVD chamber not only means shorter heating, cooling and growth periods, but also prevents contamination of the chamber. However, since most synthesis of HA-SWCNTs is performed in hot-wall reactors, adapting this well-established process to a cold-wall chamber becomes extremely crucial. Here, in order to transfer the CVD growth technology from a hot-wall to a cold-wall chamber, a systematic investigation has been conducted to determine the influence of process parameters on the HA-SWCNT’s growth. For two reasons, the cold-wall CVD chamber was upgraded with a top heater to complement the bottom substrate heater; the first reason to maintain a more uniform temperature profile during HA-SWCNTs growth, and the second reason to preheat the precursor gas flow before projecting it onto the catalyst. Our results show that the addition of a top heater had a significant effect on the synthesis. Characterization of the CNTs shows that the average density of HA-SWCNTs is around 1-2 tubes/μm with high growth quality as shown by Raman analysis.
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| 28. |
- Mu, Wei, 1985, et al.
(författare)
-
Large area and uniform monolayer graphene CVD growth on oxidized copper in a cold wall reactor
- 2016
-
Ingår i: IMAPS Nordic Annual Conference 2016 Proceedings. - 9781510827226
-
Konferensbidrag (refereegranskat)abstract
- Graphene growth on copper in cold wall chemical vapor deposition (CVD) is not an inherently self- limiting process, which means that adlayers appear as long as there is sufficient growth time. The growth of large area and uniform monolayer becomes crucial and imminent. In this study, the pre-Treatment of oxidation was employed on copper. The results have shown that oxidation pre-Treatment in combination with argon annealing process would not only decrease the density of nucleation site, but also suppress the activity of nucleation site for the multilayer graphene growth. Therefore, large area and uniform monolayer graphene was obtained. The characterization of SEM. AFM and Raman analysis was also performed on either pristine graphene copper or transferred graphene on silicon oxide substrate.
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| 29. |
- Murari, A., et al.
(författare)
-
A control oriented strategy of disruption prediction to avoid the configuration collapse of tokamak reactors
- 2024
-
Ingår i: Nature Communications. - 2041-1723 .- 2041-1723. ; 15:1
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Tidskriftsartikel (refereegranskat)abstract
- The objective of thermonuclear fusion consists of producing electricity from the coalescence of light nuclei in high temperature plasmas. The most promising route to fusion envisages the confinement of such plasmas with magnetic fields, whose most studied configuration is the tokamak. Disruptions are catastrophic collapses affecting all tokamak devices and one of the main potential showstoppers on the route to a commercial reactor. In this work we report how, deploying innovative analysis methods on thousands of JET experiments covering the isotopic compositions from hydrogen to full tritium and including the major D-T campaign, the nature of the various forms of collapse is investigated in all phases of the discharges. An original approach to proximity detection has been developed, which allows determining both the probability of and the time interval remaining before an incoming disruption, with adaptive, from scratch, real time compatible techniques. The results indicate that physics based prediction and control tools can be developed, to deploy realistic strategies of disruption avoidance and prevention, meeting the requirements of the next generation of devices.
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| 30. |
- Shaw, Justin M., et al.
(författare)
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Magnetic damping in sputter-deposited Co2MnGe Heusler compounds with A2, B2, and L2(1) orders : Experiment and theory
- 2018
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Ingår i: Physical Review B. - : American Physical Society. - 2469-9950 .- 2469-9969. ; 97:9
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Tidskriftsartikel (refereegranskat)abstract
- We show that very low values of the magnetic damping parameter can be achieved in sputter deposited polycrystalline films of Co2MnGe annealed at relatively low temperatures ranging from 240 degrees C to 400 degrees C. Damping values as low as 0.0014 are obtained with an intrinsic value of 0.0010 after spin-pumping contributions are considered. Of importance to most applications is the low value of inhomogeneous linewidth that yields measured linewidths of 1.8 and 5.1 mT at 10 and 40 GHz, respectively. The damping parameter monotonically decreases as the B2 order of the films increases. This trend is reproduced and explained by ab initio calculations of the electronic structure and damping parameter. Here, the damping parameter is calculated as the structure evolves from A2 to B2 to L2(1) orders. The largest decrease in the damping parameter occurs during the A2 to B2 transition as the half-metallic phase becomes established.
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| 31. |
- Wang, Nan, 1988, et al.
(författare)
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Efficient surface modification of carbon nanotubes for fabricating high performance CNT based hybrid nanostructures
- 2017
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Ingår i: Carbon. - : Elsevier BV. - 0008-6223. ; 111, s. 402-410
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Tidskriftsartikel (refereegranskat)abstract
- Carbon nanotubes (CNTs) were chemically modified to achieve strong binding strength with the attached functional components as well as good dispersability and nanoparticle size-uniformity. An efficient multi-oxidation process was developed to create porous out layer with many nanoscale defects on the surface of CNTs for metallic nanoparticle close attachment and bond sufficient oxygen-containing groups, which assisted the dispersion of CNTs in the aqueous solution. The surface modified CNTs have advantages of strong binding capability, large surface area, high mechanical strength and good dispersability, which show great potential as building blocks for hybrid nanomaterials. Monodispersed silver nano particles with an average size of 3 nm were formed from inside the created nanoscale defects on the surface of CNTs without any obvious agglomerations. The fabricated hybrid exhibited much enhanced anti-bacterial performance compared to commercial silver nanoparticles due to the combined antibacterial effects of CNTs and silver nanoparticles. With these superior properties, the developed surface modification process could be widely used for improving the performances of many CNT based hybrid nanomaterials in diverse applications.
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| 32. |
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| 33. |
- Wang, Nan, 1988, et al.
(författare)
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Flexible Multifunctionalized Carbon Nanotubes-Based Hybrid Nanowires
- 2015
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Ingår i: Advanced Functional Materials. - : Wiley. - 1616-3028 .- 1616-301X. ; 25:26, s. 4135-4143
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Tidskriftsartikel (refereegranskat)abstract
- In this work, flexible multifunctionalized carbon nanotube (CNT)-based hybrid nanowires are synthesized through surface modification processes. The good dispersability of the hybrid nanowire in polar solvents facilitates directly making fine patterns with a minimum width of 40 μm for applications of flexible and stretchable circuits (FSCs). The hybrid nanowire possesses a flexible and highly conductive structure which demonstrates stable electro-mechanical properties on polydimethylsiloxane (PDMS) substrates under large structural deformation. FSCs fabricated from the hybrid nanowires show a constant resistance of 0.096 Ω □-1 (equivalent of a resistivity 0.96 Ω μm) under repeated bending cycles. The FSCs also have a low and stable sheet resistance of 0.4 Ω □-1 for strains up to 30%, which is almost four orders of magnitude lower than that of pure CNT samples (1316 Ω □-1). Further improved stretchability and electro-mechanical properties (0.1 Ω □-1, at the strain of 100%) are achieved with a prestrain PDMS substrate. Repeated deformation tests demonstrate the high reliability of FSCs. The observed stable and reliable electro-mechanical performance of FSCs suggests the potential use of the material in wearable and portable electronics. Multifunctionalized hybrid nanowires based on carbon nanotubes are prepared through different surface modification processes. These hybrid nanowires exhibit both the high electrical conductivity of metal and excellent mechanical properties of carbon nanotubes together with good dispersability. Flexible and stretchable electrodes based on the hybrid nanowires demonstrate stable electro-mechanical properties under large structural deformations.
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| 34. |
- Zhang, Yong, 1982, et al.
(författare)
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Characterization and simulation of liquid phase exfoliated graphene-based films for heat spreading applications
- 2016
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Ingår i: Carbon. - : Elsevier BV. - 0008-6223. ; 106, s. 195-201
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Tidskriftsartikel (refereegranskat)abstract
- This paper concerns the thermal properties of graphene-based films for heat spreading applications. Following liquid phase exfoliation (LPE) films were made by two different methods, vacuum filtration and drop coating. Temperature decreases of up to 6 °C and 4 °C were measured at a heat flux density of 1200 W/cm2 for the vacuum filtrated and drop coated films respectively. For the first time in this paper, three different methods were combined to evaluate and predict the thermal performance of such graphene-based films. Resistance thermometers were used to monitor the hotspot temperature decrease versus the Joule heat flow as a result of using graphene-based heat spreaders. The 3ω method was used to experimentally determine the in-plane and through-plane thermal conductivities of such films. A finite element model of the hotspot test structure was setup using the in-plane and through-plane thermal conductivities (110 and 0.25 W/mK, respectively) obtained from the 3ω measurements. Simulations were performed to predict the hotspot temperature decrease with excellent agreement obtained between all methods. The results indicate that the alignment and purity of the graphene-based films, as well as their thermal boundary resistance with respect to the chip, are key parameters when determining the thermal performance of graphene-based heat spreaders.
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| 35. |
- Zhang, Yong, 1982, et al.
(författare)
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Chemical vapor deposition grown graphene on Cu-Pt alloys
- 2017
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Ingår i: Materials Letters. - : Elsevier BV. - 1873-4979 .- 0167-577X. ; 193, s. 255-258
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Tidskriftsartikel (refereegranskat)abstract
- In this letter, the results from a series of experiments where graphene was grown on copper-platinum (Cu-Pt) alloy foils by chemical vapor deposition (CVD) are presented. By using Raman spectroscopy to analyze graphene films grown on Pt-Cu alloy foils with different Cu/Pt weight ratios (75/25, 50/50 and 25/75), we could show how the Cu/Pt weight ratio affected both the quality and the number of layers in the as-synthesized graphene films. Furthermore, graphene growth was shown to occur at temperatures as low as 750 °C due to what we believe is the strong catalytic ability of the Cu-Pt alloy foils. By keeping the flow rate of the CH4 precursor gas as low as 1.5 sccm, a low growth rate was obtained where the growth rates of monolayer and bilayer graphene could be controlled by simply adjusting the growth time.
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| 36. |
- Zhang, Yong, 1982, et al.
(författare)
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Graphene-based heater
- 2016
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Ingår i: IMAPS Nordic Annual Conference 2016; Tonsberg; Norway; 5-7 June 2016. - 9781510827226
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Konferensbidrag (refereegranskat)abstract
- The excellent thermal conductivity and optical transmittance of graphene make it tremendously interesting as a material for heating applications. In this paper, we demonstrate graphene can be used as a new heating element. The graphene is synthesized by chemical vapor deposition (CVD) on Cu foil. The heating performance is studied in terms of applied voltage, heating rate and input power density. A two-layer graphene film based heater can reach an equilibrium temperature up to 90C when 60 V voltage is applied for 2 min. A maximum heating rate of 1.1 C/s was observed under an applied voltage of 60 V. The results indicate that the graphene-based heater holds great promise for many applications such as defrosting and antifogging devices.
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| 37. |
- Zhang, Yong, 1982, et al.
(författare)
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Improved Heat Spreading Performance of Functionalized Graphene in Microelectronic Device Application
- 2015
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Ingår i: Advanced Functional Materials. - : Wiley. - 1616-3028 .- 1616-301X. ; 25:28, s. 4430-4435
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Tidskriftsartikel (refereegranskat)abstract
- It is demonstrated that a graphene-based film (GBF) functionalized with silane molecules strongly enhances thermal performance. The resistance temperature detector results show that the inclusion of silane molecules doubles the heat spreading ability. Furthermore, molecular dynamics simulations show that the thermal conductivity () of the GBF increased by 15%-56% with respect to the number density of molecules compared to that with the nonfunctionalized graphene substrate. This increase in is attributed to the enhanced in-plane heat conduction of the GBF, resulting from the simultaneous increase of the thermal resistance between the GBF and the functionalized substrate limiting cross-plane phonon scattering. Enhancement of the thermal performance by inserting silane-functionalized molecules is important for the development of next-generation electronic devices and proposed application of GBFs for thermal management.
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