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- Ankarcrona, Johan, et al.
(författare)
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Simulation and modeling of the substrate contribution to the output resistance for RF-LDMOS power transistors
- 2004
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 48:5, s. 789-797
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Tidskriftsartikel (refereegranskat)abstract
- High frequency substrate losses for RF MOSFETs are analyzed using numerical device simulation. The results show that losses in devices made on low resistivity substrate occur through the substrate while losses in devices made on high resistivity substrate in the high frequency region occur along the surface through the device (source–drain). An equivalent circuit model is developed which accurately describes the off-state losses. Based on the model significant improvements in terms of output resistance are demonstrated, using an improved device on high resistivity substrate.
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- Olsson, Jörgen, 1966-, et al.
(författare)
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A New Latch-Free LIGBT on SOI
- 2015
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Ingår i: Proceedings EUROSOI-ULIS. - 9781479969111 ; , s. 33-36
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Konferensbidrag (refereegranskat)abstract
- A new latch-free LIGBT on SOI is presented. The new device combines advantages from both LDMOS as well as LIGBT technologies; high breakdown voltage, high drive current density, low control voltages, at the same time eliminating latchup problems. Breakdown voltage of over 200 V, on-state current density over 3 A/mm and latch-free operation is demonstrated.
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- Olsson, Jörgen, 1966-, et al.
(författare)
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A New Latch-Free LIGBT on SOI with Very High Current Density and Low Drive Voltage
- 2016
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 115, s. 179-184
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Tidskriftsartikel (refereegranskat)abstract
- A new latch-free LIGBT on SOI is presented. The new device combines advantages from both LDMOS as well as LIGBT technologies; high breakdown voltage, high drive current density, low control voltages, at the same time eliminating latch-up problems. The new LIGBT has the unique property of independent scaling of the input control device, i.e. LDMOS, and the output part of the device, i.e. the p-n-p part. This allows for additional freedom in designing and optimizing the device properties. Breakdown voltage of over 200 V, on-state current density over 3 A/mm, specific on-resistance below 190 mWmm2, and latch-free operation is demonstrated.
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- Vestling, Lars, et al.
(författare)
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Increased efficiency in RF-power SOI-LDMOS transistors
- 2009
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Ingår i: Proceedings of EUROSOI. ; , s. 117-118, s. 117-118
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Konferensbidrag (refereegranskat)abstract
- The effect of substrate resistivity on efficiency in high-power operation of high-frequency SOI-LDMOS transistors is for the first time investigated using computational load-pull simulations. Identical SOI-LDMOS transistors have been studied on different substrate resistivities. Their highpower performance has been compared to previous investigations concerning the off-state ROUT to high-efficiency relation. It is shown that albeit high off-state ROUT is a good indication it may not always be sufficient for high efficiency operation. The bias and frequency dependency of the coupling through the substrate makes a more detailed on-state analysis necessary. It is shown that very low resistivity and high resistivity SOI-substrates both result in high efficiency at the studied frequency and bias-point. It is also shown thata normally doped, medium resistivity, substrate results in significantly lower efficiency.
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| 26. |
- Vestling, Lars, 1970-, et al.
(författare)
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Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors
- 2010
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Ingår i: Solid-State Electronics. - : Elsevier. - 0038-1101 .- 1879-2405. ; 54:2, s. 171-177
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Tidskriftsartikel (refereegranskat)abstract
- Large-signal analysis of RF-power SOI-LDMOS transistors has been done on devices with different substrates resistivities. The effect of substrate resistivity on efficiency and output power has been investigated in class-AB operation and especially the loss mechanisms are studied. The large-signal performance is compared with the small-signal performance in an attempt to couple those parameters more tightly to each other. It is shown that the resistivity has great impact on the efficiency of the devices and the differences are related to losses in the substrate. The result verifies earlier indications that either a very high or very low substrate resistivity is beneficial to minimize the substrate losses. The study also shows interesting connections between the small-signal output resistance and capacitance and their large-signal counterparts derived from optimum load impedances.
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