| 1. |
- Li, Shunyi, et al.
(författare)
-
Intrinsic energy band alignment of functional oxides
- 2014
-
Ingår i: Physica Status Solidi - Rapid Research Letetrs. - : Wiley. - 1862-6254 .- 1862-6270. ; 8:6, s. 571-576
-
Tidskriftsartikel (refereegranskat)abstract
- The energy band alignment at interfaces between different materials is a key factor, which determines the function of electronic devices. While the energy band alignment of conventional semiconductors is quite well understood, systematic experimental studies on oxides are still missing. This work presents an extensive study on the intrinsic energy band alignment of a wide range of functional oxides using photoelectron spectroscopy with in-situ sample preparation. The studied materials have particular technological importance in diverse fields as solar cells, piezotronics, multiferroics, photoelectrochemistry and oxide electronics. Particular efforts have been made to verify the validity of transitivity, in order to confirm the intrinsic nature of the obtained band alignment and to understand the underlying principles. Valence band offsets up to 1.6 eV are observed. The large variation of valence band maximum energy can be explained by the different orbital contributions to the density of states in the valence band. The framework provided by this work enables the general understanding and prediction of energy band alignment at oxide interfaces, and furthermore the tailoring of energy level matching for charge transfer in functional oxides. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
|
|
| 2. |
- Smaali, A., et al.
(författare)
-
Pulsed laser deposited transparent and conductive V-doped ZnO thin films
- 2020
-
Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 700
-
Tidskriftsartikel (refereegranskat)abstract
- ZnO and vanadium-doped ZnO (0.7–4.1 at.%) thin films were deposited onto corning glass substrates by the pulsed laser deposition technique using a KrF excimer laser (λ = 248 nm). The films were deposited at 500 °C under an oxygen pressure of 1 Pa with a laser fluence of 2 J/cm2. The structural, morphological, optical and electrical properties as a function of the dopant atomic concentration were investigated by means of X-ray diffraction, Scanning Electron Microscopy, spectrophotometry, conductivity and Hall measurements. All the doped and undoped films show a preferential orientation along the c-axis with a deterioration at higher doping levels (>4 at. %). Besides, as the doping amount increases the in-plane stress leads to an increase of the c-axis lattice parameter. The films are transparent within the wavelength range 400–1200 nm. The electrical resistivity of the films drops from 8.2 10−3 to 1.3 10−3 Ω cm with an increase in the dopant concentration up to 0.9 at. % and then rises as the dopant level is increased further.
|
|
