| 1. |
- Bajusz, Csaba, et al.
(författare)
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The nuclear activity of the actin-binding Moesin protein is necessary for gene expression in Drosophila
- 2021
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Ingår i: The FEBS Journal. - : Wiley. - 1742-464X .- 1742-4658. ; 288:16, s. 4812-4832
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Tidskriftsartikel (refereegranskat)abstract
- Ezrin-Radixin-Moesin (ERM) proteins play an essential role in the cytoplasm by cross-linking actin filaments with plasma membrane proteins. Research has identified the nuclear localization of ERMs, as well as the involvement of a single Drosophila ERM protein, Moesin, in nuclear mRNA exports. However, the question of how important the nuclear activity of ERM proteins are for the life of an organism has so far not been explored. Here, we present the first attempt to reveal the in vivo relevance of nuclear localization of Moesin in Drosophila. With the help of a nuclear export signal, we decreased the amount of Moesin in the nuclei of the animals. Furthermore, we observed various developmental defects, demonstrating the importance of ERM function in the nucleus for the first time. Transcriptome analysis of the mutant flies revealed that the lack of nuclear Moesin function leads to expression changes in nearly 700 genes, among them heat-shock genes. This result together with additional findings revealed that in Drosophila the expression of protein chaperones requires the nuclear functions of Moesin.
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| 2. |
- Banyai, Istvan, et al.
(författare)
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Simple O-17 NMR method for studying electron self-exchange reaction between UO22+ and U4+ aqua ions in acidic solution
- 2016
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Ingår i: Magnetic Resonance in Chemistry. - : WILEY-BLACKWELL. - 0749-1581 .- 1097-458X. ; 54:6, s. 444-450
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Tidskriftsartikel (refereegranskat)abstract
- O-17 NMR spectroscopy is proven to be suitable and convenient method for studying the electron exchange by following the decrease of O-17-enrichment in (UOO2+)-O-17 ion in the presence of U4+ ion in aqueous solution. The reactions have been performed at room temperature using I=5MClO(4)(-) ionic medium in acidic solutions in order to determine the kinetics of electron exchange between the U4+ and UO22+ aqua ions. The rate equation is given as R = a[H+](-2) + R, where R is an acid independent parallel path. R depends on the concentration of the uranium species according to the following empirical rate equation: R = k(1)[UO2+](1/2)[U4+](1/2) + k(2)[UO2+](3/2)[U4+](1/2). The mechanism of the inverse H+ concentration-dependent path is interpreted as equilibrium formation of reactive UO2+ species from UO22+ and U4+ aqua ions and its electron exchange with UO22+. The determined rate constant of this reaction path is in agreement with the rate constant of UO22+-UO2+, one electron exchange step calculated by Marcus theory, match the range given experimentally of it in an early study. Our value lies in the same order of magnitude as the recently calculated ones by quantum chemical methods. The acid independent part is attributed to the formation of less hydrolyzed U(V) species, i.e. UO3+, which loses enrichment mainly by electron exchange with UO22+ ions. One can also conclude that O-17 NMR spectroscopy, or in general NMR spectroscopy with careful kinetic analysis, is a powerful tool for studying isotope exchange reactions without the use of sophisticated separation processes. Copyright (C) 2015 John Wiley amp; Sons, Ltd.
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| 3. |
- Bathen, M. E., et al.
(författare)
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Anisotropic and plane-selective migration of the carbon vacancy in SiC : Theory and experiment
- 2019
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Ingår i: Physical Review B. - : American Physical Society. - 2469-9950 .- 2469-9969. ; 100:1
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Tidskriftsartikel (refereegranskat)abstract
- We investigate the migration mechanism of the carbon vacancy (VC) in silicon carbide (SiC) using a combination of theoretical and experimental methodologies. The VC, commonly present even in state-of-the-art epitaxial SiC material, is known to be a carrier lifetime killer and therefore strongly detrimental to device performance. The desire for VC removal has prompted extensive investigations involving its stability and reactivity. Despite suggestions from theory that VC migrates exclusively on the C sublattice via vacancy-atom exchange, experimental support for such a picture is still unavailable. Moreover, the existence of two inequivalent locations for the vacancy in 4H-SiC [hexagonal, VC(h), and pseudocubic, VC(k)] and their consequences for VC migration have not been considered so far. The first part of the paper presents a theoretical study of VC migration in 3C- and 4H-SiC. We employ a combination of nudged elastic band (NEB) and dimer methods to identify the migration mechanisms, transition state geometries, and respective energy barriers for VC migration. In 3C-SiC, VC is found to migrate with an activation energy of EA=4.0 eV. In 4H-SiC, on the other hand, we anticipate that VC migration is both anisotropic and basal-plane selective. The consequence of these effects is a slower diffusivity along the axial direction, with a predicted activation energy of EA=4.2 eV, and a striking preference for basal migration within the h plane with a barrier of EA=3.7 eV, to the detriment of the k-basal plane. Both effects are rationalized in terms of coordination and bond angle changes near the transition state. In the second part, we provide experimental data that corroborates the above theoretical picture. Anisotropic migration of VC in 4H-SiC is demonstrated by deep level transient spectroscopy (DLTS) depth profiling of the Z1/2 electron trap in annealed samples that were subject to ion implantation. Activation energies of EA=(4.4±0.3) eV and EA=(3.6±0.3) eV were found for VC migration along the c and a directions, respectively, in excellent agreement with the analogous theoretical values. The corresponding prefactors of D0=0.54cm2/s and 0.017cm2/s are in line with a simple jump process, as expected for a primary vacancy point defect.
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| 4. |
- Booker, Ian D., et al.
(författare)
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Chloride-based SiC growth on a-axis 4H-€“SiC substrates
- 2016
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Ingår i: Physica. B, Condensed matter. - : Elsevier. - 0921-4526 .- 1873-2135. ; 480, s. 23-25
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Tidskriftsartikel (refereegranskat)abstract
- Abstract SiC has, during the last few years, become increasingly important as a power-device material for high voltage applications. The thick, low-doped voltage-supporting epitaxial layer is normally grown by CVD on 4° off-cut 4H–SiC substrates at a growth rate of 5 – 10 Ό m / h using silane (SiH4) and propane (C3H8) or ethylene (C2H4) as precursors. The concentrations of epitaxial defects and dislocations depend to a large extent on the underlying substrate but can also be influenced by the actual epitaxial growth process. Here we will present a study on the properties of the epitaxial layers grown by a Cl-based technique on an a-axis (90° off-cut from c-direction) 4H–SiC substrate.
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| 5. |
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| 6. |
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| 7. |
- Lilja, Louise, 1985-, et al.
(författare)
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Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers
- 2017
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Ingår i: Silicon Carbide and Related Materials 2016. - : Trans Tech Publications Ltd. ; , s. 238-241
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Konferensbidrag (refereegranskat)abstract
- In this study we have grown thick 4H-SiC epitaxial layers with different n-type doping levels in the range 1E15 cm-3 to mid 1E18 cm-3, in order to investigate the influence on carrier lifetime. The epilayers were grown with identical growth conditions except the doping level on comparable substrates, in order to minimize the influence of other parameters than the n-type doping level. We have found a drastic decrease in carrier lifetime with increasing n-type doping level. Epilayers were further characterized with low temperature photoluminescence and deep level transient spectroscopy.
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| 8. |
- Minamisawa, R. A., et al.
(författare)
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Characterization of a n+3C/n-4H SiC heterojunction diode
- 2016
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 108:14, s. 143502-
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Tidskriftsartikel (refereegranskat)abstract
- We report on the fabrication of n+3C/n-4H SiC heterojunction diodes (HJDs) potentially promising the ultimate thermal stability of the junction. The diodes were systematically analyzed by TEM, X-ray diffraction, AFM, and secondary ion mass spectroscopy, indicating the formation of epitaxial 3C-SiC crystal on top of 4H-SiC substrate with continuous interface, low surface roughness, and up to similar to 7 x 10(17) cm(-3) dopant impurity concentration. The conduction band off-set is about 1 V as extracted from CV measurements, while the valence bands of both SiC polytypes are aligned. The HJDs feature opening voltage of 1.65 V, consistent with the barrier height of about 1.5 eV extracted from CV measurement. We finally compare the electrical results of the n+3C/n-4H SiC heterojunction diodes with those featuring Si and Ge doped anodes in order to evaluate current challenges involved in the fabrication of such devices. (C) 2016 AIP Publishing LLC.
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| 9. |
- Stenberg, Pontus, et al.
(författare)
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Silicon Chemistry in Fluorinated Chemical Vapor Deposition of Silicon Carbide
- 2017
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Ingår i: The Journal of Physical Chemistry C. - Washington : American Chemical Society (ACS). - 1932-7447 .- 1932-7455. ; 121:5, s. 2711-2720
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Tidskriftsartikel (refereegranskat)abstract
- The use of chlorinated chemical vapor deposition (CVD) chemistry for growth of homoepitaxial layers of silicon carbide (SiC) has diminished the problem of homogenous gas phase nucleation, mainly the formation of Si droplets, in CVD of SiC by replacing Si-Si bonds with stronger Si-Cl bonds. Employing the even stronger Si-F bond could potentially lead to an even more efficient CVD chemistry, however, fluorinated chemistry is very poorly understood for SiC CVD. Here, we present studies of the poorly understood fluorinated CVD chemistry for homoepitaxial SiC layers using SiF4 as Si precursor. We use a combination of experimental growth studies, thermal equilibrium calculations of gas phase composition and quantum chemical computations (i.e. hybrid density functional theory) of the surface chemistry to probe the silicon chemistry in the CVD process. We show that while growth rates on the order of 35 µm/h can be achieved with a fluorinated chemistry, the deposition chemistry is very sensitive to the mass flows of the precursors and not as robust as the chlorinated CVD chemistry which routinely yields 100 µm/h over wide conditions. By using the position for the onset of epitaxial growth along the gas flow direction as a measurable, together with modeling, we conclude that SiF is the main Si growth species with SiHF as a minor Si species contributing to growth.
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| 10. |
- Ul-Hassan, Jawad, et al.
(författare)
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Fast growth rate epitaxy on 4((degrees)under-bar) off-cut 4-inch diameter 4H-SiC wafers
- 2014
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Ingår i: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2. - : Trans Tech Publications. ; , s. 179-182
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Konferensbidrag (refereegranskat)abstract
- We report the development of over 100 mu m/h growth rate process on 4-inch diameter wafers using chlorinated growth. The optimized growth process has shown extremely smooth epilayers completely free of surface step-bunching with very low surface defect density, high uniformity in thickness and doping and high run to run reproducibility in growth rate, controlled doping and defect density.
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