SwePub - sökning: WFRF:(Ferndahl Mattias 1973)

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1.	Frank, Markus, 1970, et al. (författare) Differential Impedance Measurement Method of RFID Transponder Chips at UHF 2013 Ingår i: Proceedings of the 43rd European Microwave Conference. - 9782874870316 ; 2013, s. 68-71 Konferensbidrag (refereegranskat)abstract A novel on-wafer measurement method of RFID transponder chips is presented. A comparison is made between single ended one-port, single ended two-port and differential two-port excitation. The two-port method is a flexible way of measuring chips consisting of both several individuals as well as chip types with different geometries with one and the same probe type. The theory of un-terminating and de-embedding is described and verified by measurements. A qualitative analysis is defined, which explains certain phenomena seen in communication tests performed on RFID protocol level. This is further supported by measurement results from the presented method.
2.	Abbasi, Morteza, 1982, et al. (författare) An E-Band(71-76, 81-86 GHz) Balanced Frequency Tripler for High-Speed Communications 2009 Ingår i: APMC: 2009 ASIA PACIFIC MICROWAVE CONFERENCE. - 9781424428014 ; 1-5, s. 1184-1187 Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract An E-Band transistor-based balanced frequency tripler is implemented using a 0.15 mu m GaAs mHEMT process which can be integrated into a single-chip RF front-end. The balanced configuration with 90 degrees hybrids at the input and output improves the port impedance matching which is measured to be better than 15 dB at the input and 10 dB at the output over the frequencies of interest. The tripler has a conversion loss of 11.5 dB from 71 GHz to 76 GHz and 14 dB from 81 GHz to 86 GHz. The second and forth harmonics are suppressed by more than 30 dB and the fundamental frequency by 20 dB. The tripler can deliver -2 dBm output power.
3.	Algaba Brazalez, Astrid, 1983, et al. (författare) Evaluation of losses of the ridge gap waveguide at 100 GHz 2013 Ingår i: IEEE Antennas and Propagation Society, AP-S International Symposium (Digest). - 1522-3965. - 9781467353175 ; , s. 1456-1457 Konferensbidrag (refereegranskat)abstract An evaluation of losses of the Ridge Gap Waveguide (r-GAP) at 100 GHz has been developed in terms of Quality Factor. For this aim, an r-GAP resonator has been designed, simulated and measured. The feeding to the circuit is provided via a transition from Micostrip-to-Ridge Gap Waveguide based in electromagnetic coupling in order to ensure compatibility with the available probe stations.
4.	Angelov, Iltcho, 1943, et al. (författare) An empirical table based HBT large signal model 2004 Ingår i: 34th European Microwave Conference. ; 1, s. 229-232 Konferensbidrag (refereegranskat)
5.	Angelov, Iltcho, 1943, et al. (författare) CMOS LARGE SIGNAL and RF Noise MODEL FOR CAD 2006 Ingår i: EUMC2006 Manchester. ; 1:1 Konferensbidrag (refereegranskat)abstract A compact large-signal model(LS) for high frequency CMOS transistors is proposed and experimentally evaluated with DC, S-parameter, Power Spectrum measurements and load pool measurements. Very good correspondences between measurements on 90 nm CMOS FETs and simulations were achieved. Due to the low number of model parameters and the careful selection of model equations, the model exhibits excellent convergence behavior, a property important for successful nonlinear circuit simulation of RF circuits.The LS model was extended to model the RF Noise and implemented in commercial CAD tool and shows a good correspondence between the measurements and the model
6.	Angelov, Iltcho, 1943, et al. (författare) CMOS large signal model for CAD 2003 Ingår i: 2003 IEEE MTT-S International Microwave Symposium Digest. ; 2, s. 643-646 Konferensbidrag (refereegranskat)
7.	Angelov, Iltcho, 1943, et al. (författare) Experiment design for quick statistical FET large signal model extraction 2013 Ingår i: 81st ARFTG Microwave Measurement Conference: Metrology for High Speed Circuits and Systems, ARFTG 2013. - 9781467349826 Konferensbidrag (refereegranskat)abstract Process variations influence the accuracy of designs and yield in production. This paper addresses the implementation of these variations in large signal FET models, with particular attention on the organization of measurements as to speed up the direct extraction of the model parameters. © 2013 IEEE.
8.	Angelov, Iltcho, 1943, et al. (författare) Large Signal Model and Implementation of Impact Ionization for FET Devices 2010 Ingår i: Asia-Pacific Microwave Conference, APMC 2010; Yokohama; Japan; 7 December 2010 through 10 December 2010. - 9784902339222 ; , s. 2299-2302 Konferensbidrag (refereegranskat)abstract This paper presents a large signal model of impact ionization effects(Ii) of FETs and its CAD implementation. The Ii model is compact, describes the effects observed in the gate and drains current in a simple way, converges well in harmonic balance simulation. The model is verified for various FET devices and materials like GaAs SiC,GaN, and InSb. By using this model, the prediction accuracy for Pout and PAE is improved, especially when the device is pushed to the limits and impact ionization can be observed. When aware for the problem, the designer is able to construct in a better way the input and output matching circuits to avoid operating the device in the dangerous regions of operation and hence improve reliability.
9.	Angelov, Iltcho, 1943, et al. (författare) On the delay implementation in FET Large Signal Models 2020 Ingår i: 2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2020 - Proceedings. - 9781728126456 Konferensbidrag (refereegranskat)abstract Several options for implementing FET channel delay in user defined Large Signal models (LS) are discussed. The high importance of precise definition of reference planes for MMIC operating in mm waves is discussed as well. The delay implementation and a way to improve the reference planes accuracy was tested in a special two stage W-band test amplifier circuit. The LS model was used later to design several practical MMIC circuits.
10.	Angelov, Iltcho, 1943, et al. (författare) On the implementation of device processing tolerances in FET Large Signal Models 2012 Ingår i: 2012 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMIC 2012. - 9781467329491 Konferensbidrag (refereegranskat)abstract Device technology is becoming quite mature and repeatable, but nevertheless, for various reasons, there are statistical variations in device parameters. These process variations will influence the accuracy of the designs and yield in production. The implementation of these variations in Large Signal Models is discussed in the paper.
11.	Dahlbäck, Robin, 1985, et al. (författare) Compact 340 GHz homodyne transceiver modules for FMWC imaging radar arrays. 2016 Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; 2016-August Konferensbidrag (refereegranskat)abstract We present a solution where one single LO chain is used to feed a homodyne FMCW radar transceiver. An InGaAs pHEMT active frequency multiplier MMIC (x8) and a Schottky diode frequency doubler make up the LO chain. The novel Schottky diode based transceiver operates both as a frequency multiplier (x2) and as a sub-harmonic mixer. The modules operate at a center frequency of 340 GHz with a 30 GHz modulation bandwidth. An output power of 0 dBm, an IF noise level of -168 dBm/Hz and a receiver conversion loss of 18 dB is achieved in the band. The form factor of the modules is adapted to build one- or two- dimensional FMCW radar arrays. State of the art system performance is achieved while system complexity, size and cost is significantly reduced.
12.	Fager, Christian, 1974, et al. (författare) Uncertainties in small-signal equivalent circuit modeling 2011 Ingår i: Nonlinear Transistor Model Parameter Extraction Techniques. - 9780521762106 Bokkapitel (övrigt vetenskapligt/konstnärligt)
13.	Ferndahl, Mattias, 1973, et al. (författare) 20 GHz Power Amplifier Design in 130 nm CMOS 2008 Ingår i: 2008 European Microwave Integrated Circuit Conference, EuMIC 2008; Amsterdam; Netherlands; 27 October 2008 through 31 October 2008. - 9782874870071 ; , s. 254-257 Konferensbidrag (refereegranskat)abstract Five different 20 GHz power amplifiers in 130 nm CMOS technology have been designed and characterized. The power amplifiers explore single versus cascode configuration, smaller versus larger transistor sizes, as well as the combination of two amplifiers using power splitters/combiners. A maximum output power of 63 mW at 20 GHz was achieved. Transistor level characterization using load pull measurements on 1 mm gate width transistors yielded 148 mW output power. These numbers are, to the authors? knowledge, the highest reported for CMOS above 10 GHz. Transistor modeling and layout for power amplifiers are also discussed.
14.	Ferndahl, Mattias, 1973, et al. (författare) 40 and 60 GHz frequency doublers in 90-nm CMOS 2004 Ingår i: IEEE MTT-S Int. Microwave Symp. Dig.. ; 1, s. 179-182 Konferensbidrag (refereegranskat)
15.	Ferndahl, Mattias, 1973, et al. (författare) 7 GHz VCO in mHEMT technology with study of device flicker noise 2005 Ingår i: Gigahertz 2005 conference. Tidskriftsartikel (refereegranskat)
16.	Ferndahl, Mattias, 1973, et al. (författare) 90-nm CMOS for microwave power applications 2003 Ingår i: IEEE Microwave and Wireless Components Letters. ; 13:12, s. 523-525 Tidskriftsartikel (refereegranskat)
17.	Ferndahl, Mattias, 1973, et al. (författare) A comparison of topology and technology of balanced VCOs intended for use in a 60 GHz WLAN system 2003 Ingår i: Gigahertz 2003 conference. Konferensbidrag (refereegranskat)
18.	Ferndahl, Mattias, 1973, et al. (författare) A General Statistical Equivalent-Circuit-Based De-Embedding Procedure for High-Frequency Measurements 2008 Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 56:12, s. 2692-2700 Tidskriftsartikel (refereegranskat)abstract A general equivalent-circuit-based method for the de-embedding of scattering parameters is presented. An equivalent circuit representation is used to model the embedding package. The parameters in the models are estimated with a statistical method using measured data from all de-embedding standards jointly together. Hence, it is possible to assess parameter estimates and their variance and covariance due to measurement uncertainties. A general de-embedding equation, which is valid for any five-port with a defined nodal admittance matrix, is derived and used in the subsequent de-embedding of measured device data. Different equivalent circuit models for the embedding network are then studied, and tradeoffs between model complexity and uncertainty are evaluated. Furthermore, the influence of varying number and combinations of de-embedding standards on the parameter estimates is investigated. The method is verified, using both measured and synthetic data, and compared against previously published work. It is found to be more general while keeping or improving accuracy.
19.	Ferndahl, Mattias, 1973, et al. (författare) Broadband 7 GHz VCO in mHEMT Technology 2005 Ingår i: Asia Pacific Microwave Conference 2005. ; 5, s. 689- Tidskriftsartikel (refereegranskat)abstract The design and characterization of a broadband VCO in a 0.15 μm mHEMT technology is presented. The VCO have an output power of 0 dBm and a broad output frequency from 6.5 to 7.4 GHz using a wide multi fingered mHEMT as varactor. Phase noise is -87 dBc/Hz at 100 kHz offset exhibiting a 30 dB/decade slope due to large flicker noise sources. A comparison both to a similar pHEMT VCO and other pHEMT VCOs in the literature is included.
20.	Ferndahl, Mattias, 1973, et al. (författare) CMOS devices and circuits for microwave and millimetre wave applications 2005 Ingår i: 13th European Gallium Arsenide Conference. ; , s. 105-8 Konferensbidrag (refereegranskat)abstract We present several building blocks for RFfront ends at micro and mm-wave frequencies using 90 nmCMOS. The designs are 20 GHz single- and 40 GHz doublestage amplifiers with 5.6 and 7.3 dB gain respectively, a 20GHz resistive mixer with CL = 7.9 dB and IIP3 = 17.5 dBmplus frequency doublers to 40 and 60 GHz with CL = 15.8and 15.3 dB respectively. All circuits have been designedusing distributed elements. Both using a 5 metal layerBEOL process and a 3 metal layer BEOL with postprocessing.
21.	Ferndahl, Mattias, 1973, et al. (författare) CMOS MMICs for microwave and millimeter wave applications 2004 Ingår i: IEEE-MIKON Int. Conf. on Microwaves, Radar and Wireless Communications. ; 1, s. 237-248 Konferensbidrag (refereegranskat)
22.	Ferndahl, Mattias, 1973, et al. (författare) Deep submicron CMOS for millimeter wave power applications 2008 Ingår i: IEEE Microwave and Wireless Components Letters. ; 18:5 Tidskriftsartikel (refereegranskat)
23.	Ferndahl, Mattias, 1973, et al. (författare) Design and evaluation of 20-GHz power amplifiers in 130-nm CMOS 2009 Ingår i: International Journal of Microwave and Wireless Technologies. - 1759-0787 .- 1759-0795. ; 1:4, s. 301-307 Tidskriftsartikel (refereegranskat)abstract The use of 130-nm CMOS for power amplifiers at 20GHz is explored through a set of power amplifiers as well as transistor level measurements. The power amplifiers explore single versus cascode configuration, smaller versus larger transistor sizes, and the combination of two amplifiers using power splitters/combiners. A maximum output power of 63mW at 20GHz was achieved. Transistor-level characterization using load pull measurements on 1-mm gate width transistors yielded 148-mW/mm output power. Transistor modeling and layout for power amplifiers are also discussed. An estimate on the maximum achievable output at 20GHz from 130-nm CMOS power amplifiers, based on findings in this paper and the literature, is finally presented.
24.	Ferndahl, Mattias, 1973, et al. (författare) Highly integrated E-band direct conversion receiver 2012 Ingår i: 2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, La Jolla, CA, 14 - 17 October 2012. - 1550-8781. - 9781467309295 Konferensbidrag (refereegranskat)abstract This paper presents a highly integrated 70-98 GHz direct conversion receiver with 3 stage LNA, x6 frequency multiplier with buffer amplifier, and IQ-mixer suitable for Eband radio communication. The LNA, x6 and IQ-mixer are also presented separately. The LNA covers 65 to 95 GHz with 15 dB gain and minimum 5.5 dB noise figure, x6 covers 71 to 91 GHz with 0 to 8 dBm output power and the IQ-mixer an RF frequency from 70 to 95 GHz and IF frequency from DC to 12 GHz with only 8 dB conversion loss and better than 15 dB image reject. The complete receiver circuit shows an RF bandwidth of 70 to 98 GHz, LO bandwidth of 75 to 92 GHz and IF bandwidth from DC to more than 12 GHz. The conversion gain is 3 to 6 dB with a noise figure of 5 to 7 dB, the image rejection 15 dB to as high as 28 dB, and the input 1 dB compression point -12 dBm.
25.	Ferndahl, Mattias, 1973 (författare) Integrated VCOs in Gallium Arsenide HEMT technologies with a novel varactor structure 2006 Licentiatavhandling (övrigt vetenskapligt/konstnärligt)abstract This thesis presents results on metamorphic and pseudomorpic GaAs HEMT based Voltage Controlled Oscillators and a novel high-Q varactor structure, used in the VCOs, together with a straightforward extraction procedure for the varactors.Theory and fundamentals around LC-oscillators with oscillator criteria, phase noise and different topologies are given as background together with VCO phase noise measurement methods and an overview on device flicker noise; its physical origin and measurement.Furthermore, design guidelines and suggestions for successful integrated VCO design is presented using a 7 GHz mHEMT VCO as example. It is also shown that the flicker noise generation in mHEMT and pHEMT increases rapidly with drain source voltage leading to a changed optimal Vds bias in the VCO compared to if these noise sources were non existent.Finally, the conclusion is made that a mHEMT process is equally suitable for VCOs as a pHEMT process with the mHEMT version more favorable from a power consumption perspective.
26.	Ferndahl, Mattias, 1973, et al. (författare) Large signal measurements of an active balun : the single ended to differential matrix balun 2010 Ingår i: 2010 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2010; Goteborg; 26 April 2010 through 27 April 2010. - 9781424474127 ; , s. 119-122 Konferensbidrag (refereegranskat)abstract Large signal measurements of an active transistor based balun using an Large Signal Netork Analyzer (LSNA) have been performed to study the phase and amplitude imbalance as a function of input power and frequency. The LSNA measurements are compared and verified against small signal parameters from a standard Vector Network Analyzer (VNA). It is shown that LSNA measurements can give further information of the nonlinear behavior of active baluns. © 2010 IEEE.
27.	Ferndahl, Mattias, 1973 (författare) Microwave and millimeter wave CMOS Characterization, modeling, and design 2008 Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract The use of CMOS technologies for microwave and millimeter wave applications has recently been made possible as a result of increased transistor performance. The fT and fmax have, for example, passed 100 GHz at the 130 nm node and 200 GHz at the 65 nm node. This thesis deals with several issues related to the use of CMOS-technologies for microwave and millimeter wave applications. The main focus is above 10 GHz, i.e. above the majority of today’s commercial applications. The thesis is divided into three parts: Characterization, transistor modeling and design. In the characterization of devices, a new statistical equivalent circuit-based method is derived, validated, and compared to existing methods. The method is found to be more general while maintaining or improving accuracy. Large-signal measurements using load-pull are performed on 130 nm, 90 nm, and 45 nm CMOS transistors to evaluate their use for microwave and millimeter wave power amplification. Two empirical transistor models are also presented; a large signal model, including noise and simple scaling rules, and a small-signal noise model. The influences of gate resistance and gate leakage currents on the high frequency noise are described. The empirical large-signal model is used in the design of the first published millimeter wave CMOS frequency doublers. They were implemented in a 90 nm CMOS process and work from 20 GHz to 40 GHz and 30 GHz to 60 GHz. Conversion losses of 15.8 dB and 15.3 dB respectively, are achieved, together with good suppression of the fundamental frequency. Furthermore, the design and characterization of a set of different power amplifiers at K-band (18-27 GHz) in a 130 nm RF-CMOS process are treated. State-of-the-art output power levels of 63 mW at 20 GHz are achieved for the most complex design. For the power amplifier designs, RF extensions of compact models are extracted, and the use of cascode transistors studied. Finally, the analysis and design of a new active balun with wide broadband performance, the matrix balun, are reported. Measured results show a common mode rejection ratio, CMRR, of greater than 15 dB between 4 GHz and 42 GHz while exhibiting 2 dB gain. The balun was realized in a 0.15m mHEMT process. The same matrix balun circuit may also be biased for amplification and used as a matrix amplifier, exhibiting 10.5 dB flat gain up to 63 GHz.
28.	Ferndahl, Mattias, 1973, et al. (författare) MMICs for micro and millimetre wave applications 2005 Ingår i: Gigahertz 2005 conference. Tidskriftsartikel (refereegranskat)
29.	Ferndahl, Mattias, 1973, et al. (författare) Multi-line TRL calibration compared to a general de-embedding method 2009 Ingår i: ARFTG 73rd Microwave Measurement Conference. ; 1 Konferensbidrag (refereegranskat)abstract A direct comparison between a newly proposedgeneral equivalent-circuit-based de-embedding method and amulti-line TRL calibration is presented.It is shown that the de-embedding method yields corrected/intrinsic S-parameters with good accuracy when comparedto the calibration, even up to 100 GHz hence, validating the deembeddingmethod. Furthermore, in the de-embedding, differentequivalent-circuit models with varying complexity for the embeddingnetwork are compared and evaluated.
30.	Ferndahl, Mattias, 1973, et al. (författare) Residual and oscillator phase noise in GaAs metamorphic HEMTs 2006 Ingår i: Asia Pacific Microwave Conference 2006. Tidskriftsartikel (refereegranskat)abstract Residual phase noise measurements have been carriedout on GaAs metamorphic high electron mobility transistors,mHEMT in order to explain phase noise results from mHEMTbased VCOs. Noise is measured for several biases and inputpowers. The measurements show that the residual phase noiseis increasing with increasing drain source voltages even insaturation, possibly due to the triggering of impact ionization mechanisms. This increase in noise will act deleterious on the phase noise performance of a VCO that have the drain bias increased in order to achieve higher power in the tank and thus reduce the phase noise. The reduction in phase noise due to higher power in the tank is shown to be counteracted by the increase in residual phase noise from the mHEMTs for higher drain source voltages.
31.	Ferndahl, Mattias, 1973, et al. (författare) The combiner matrix balun, A transistor based differential to single-ended module for broadband applications 2011 Ingår i: 2011 IEEE MTT-S International Microwave Symposium, IMS 2011; Baltimore, MD; 5 June 2011 through 10 June 2011. - 0149-645X. - 9781612847566 Konferensbidrag (refereegranskat)
32.	Ferndahl, Mattias, 1973, et al. (författare) The Matrix Balun - A Transistor-Based Module for Broadband Applications 2009 Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 57:1, s. 53-60 Tidskriftsartikel (refereegranskat)abstract In this paper the analysis and design of a new active balun with very broadband performance, the matrix balun, are reported. Measured results show a common mode rejection ratio, CMRR, larger than 15 dB between 4 and 42 GHz while exhibiting 2 dB single-ended gain with a ripple of 1 dB. The balun was realized in a 0.15 mu m GaAs mHEMT process. It occupies a chip area of 0.63 mm(2) and consumes a do power of 20 mW. The same matrix balun circuit may also be biased for amplification and used as a matrix amplifier. The circuit then exhibits 10.5 dB gain up to 63 GHz with 1 dB ripple above 5.5 GHz and a power consumption of 67 mW.
33.	Gavell, Marcus, 1981, et al. (författare) A 53 GHz single chip receiver for geostationary atmospheric measurements 2011 Ingår i: 33rd IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2011, Waikoloa, 16-19 October 2011. - 1550-8781. - 9781612847122 Konferensbidrag (refereegranskat)abstract This paper presents the design and characterization of a multifunctional receiver with integrated x4 frequency multiplier for the LO generation, image reject mixer and low noise amplifier into a single chip MMIC. Noise figure has been measured to 4.6 dB and power consumption to 140 mW. The image rejection is better than 47 dB, conversion gain 10 dB and IIP3 -12 dBm. This performance is far superior to any comparable existing published 53 GHz receiver. The process used is commercially available 0.15 μm GaAs mHEMT technology featuring ft=120 GHz and fmax=200 GHz.
34.	Gavell, Marcus, 1981, et al. (författare) A fundamental upconverting Gilbert mixer for 100 GHz wireless applications 2010 Ingår i: Compound Semiconductor Integrated Circuit Symposium (CSICS), 3-6 Oct. 2010, Monterey, CA. - 1550-8781. - 9781424474370 ; , s. 1-4 Konferensbidrag (refereegranskat)abstract The design and characterization of an up-converting double balanced Gilbert cell mixer in a 0.5 µm InP DHBT process for applications in the 81-102 GHz range is presented. The process features a 4-metal layer stackup that invites to more complex designs compared to most III-V technologies. The presented mixer is a double balanced Gilbert cell design and includes an LO buffer amplifier as well as RF and LO Marchand baluns integrated on chip. The Gilbert cell mixer show excellent results in terms of; conversion gain of 13 dB, LO-RF isolation of 47 dB, output P1dB equals -10 dBm and the total power consumption is 170 mW. The frequency bandwidth covers 81 to 102 GHz.
35.	Gavell, Marcus, 1981, et al. (författare) A High Voltage mm-wave Stacked HEMT Power Amplifier in 0.1 mu m m InGaAs Technology 2015 Ingår i: 2015 IEEE MTT-S International Microwave Symposium, IMS 2015. - 9781479982752 Konferensbidrag (refereegranskat)abstract A stacked HEMT PA has been designed and implemented in a commercial 0.1 mu m InGaAs pHEMT process to increase gain and output power at mm-waves. Measurements on the 3-stage PA with parallel devices verify saturated output power of 25 dBm and maximum PAE of 15 % at 61 GHz, which is the highest reported output power of similar designs and topologies. The chip size measures 3.2 mm(2) which makes this the most power dense V-band amplifier reported from GaAs with 100 mW/mm(2).
36.	Gavell, Marcus, 1981, et al. (författare) A linear 70-95 GHz differential IQ modulator for E-band wireless communication 2010 Ingår i: IEEE MTT-S International Microwave Symposium Digest ; 2010 IEEE MTT-S International Microwave Symposium, MTT 2010; Anaheim, CA; 23 May 2010 through 28 May 2010. - 0149-645X. - 9781424477326 ; , s. 788-791 Konferensbidrag (övrigt vetenskapligt/konstnärligt)
37.	Gavell, Marcus, 1981, et al. (författare) A V-Band Stacked HEMT Power Amplifier With 25-dBm Saturated Output Power in 0.1-mu m InGaAs Technology 2016 Ingår i: IEEE Transactions on Microwave Theory and Techniques. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9480 .- 1557-9670. ; 64:12, s. 4232-4240 Tidskriftsartikel (refereegranskat)abstract A stacked high-electron mobility transistor (HEMT) power amplifier (PA) has been designed and implemented in a commercial 0.1-mu m InGaAs pHEMT process to increase gain and output power at millimeter-wave frequencies. The stability problem of the stacked HEMT has been analyzed. A new layout of the stacked HEMT for improving the high frequency stability is proposed and used in the PA design. Measurements on the three-stage PA with parallel devices verify the saturated output power of 25 dBm and the maximum power added efficiency of 15% at 61 GHz, which is the highest reported output power of stacked HEMT PAs. The chip size measures 3.2 mm(2) which makes this the most power dense V-band amplifier reported from GaAs with 100 mW/mm(2).
38.	Gavell, Marcus, 1981, et al. (författare) An Image Reject Mixer for High-Speed E-band (71-76, 81-86 GHz) Wireless Communication 2009 Ingår i: Compound Semiconductor Integrated Circuit Symposium, Oct. 2009, Greensboro, NC. - : IEEE. - 1550-8781. - 9781424451913 ; , s. 1-4 Konferensbidrag (refereegranskat)abstract In this paper, the design and characterization of a broadband image reject mixer for the next generation of point-to-point microwave links is presented. The manufacturing has been made in a commercially available 0.15 μm gate length GaAs mHEMT technology. The measured performance demonstrates a conversion loss of 9 dB and an image rejection ratio of 25 dB on average across the full E-band (71-76 and 81-86 GHz). Performance peaks at 77 GHz with conversion loss of 7 dB and image rejection of 40 dB. Furthermore, these results have been achieved with a LO power requirement of 4 dBm. To the best of the authors' knowledge this is the first reported image reject mixer suitable for the full E-band. ©2009 IEEE.
39.	Gavell, Marcus, 1981, et al. (författare) Design and Analysis of a Wideband Gilbert Cell VGA in 0.25 um InP DHBT Technology With DC-40-GHz Frequency Response 2017 Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 65:10, s. 3962-3974 Tidskriftsartikel (refereegranskat)abstract A differential variable gain amplifier (VGA) for wideband baseband signals has been designed, analyzed, and implemented in a 0.25- μ m InP double heterojunction bipolar transistor technology with fT/f max of 370/650 GHz. The 3-dB frequency bandwidth is measured to be 40 GHz with a maximum gain of 31 dB, resulting in a gain bandwidth product (GBP) of 1.4 THz, four times higher than previously reported GBP from a Gilbert cell-based VGAs. Furthermore, it measures a gain control range of 44 dB, a noise figure of 6.2 dB, an output third-order intercept point of 17 dBm, and a total power consumption of 350 mW from a single -7-V supply. With pseudorandom binary sequence test pattern signals, a clear open eye at 44 Gb/s was observed. The complete circuit, including on-chip integrated bias network and pads, measures 0.77 mm^2. We analyze the VGA for the 3-dB bandwidth and GBP by the use of zero-value time constants method to analytically identify the maximum GBP with respect to the design parameters and current bias
40.	Gunnarsson, Sten, 1976, et al. (författare) A 60 GHz Compact Single-Chip Sub-Harmonically Pumped Receiver MMIC 2007 Ingår i: 2007 European Microwave Integrated Circuits Conference. Konferensbidrag (refereegranskat)
41.	Kjellberg, Torgil, 1962, et al. (författare) A Compact Cascode Power Amplifier in 45-nm CMOS for 60-GHz Wireless Systems 2009 Ingår i: 2009 ANNUAL IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2009 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2009. - 1550-8781. - 9781424452606 ; , s. 95-98 Konferensbidrag (refereegranskat)abstract This paper presents a power amplifier in 45nm CMOS technology operating in the 50 to 60-GHz frequency range. It uses a single-ended topology with two cascode stages. A gain of 19.6 dB is obtained at 54 GHz where the gain peaks, and 17 dB at 60 GHz. The measured output-referred 1-dB compression point is 8.7 dBm at 60 GHz and a supply voltage of 2.1 V, and the saturated output power is 13.5 dBm. The bias conditions are shown to be reliable through lifetime measurements. The active chip-area measures 160 mu m x 110 mu m.
42.	Kuylenstierna, Dan, 1976, et al. (författare) A Comparisons between Different Lumped Elementand Active Baluns in Commercial MMICs 2005 Ingår i: Proc. of GigaHertz 2005. - 0780383311 Konferensbidrag (övrigt vetenskapligt/konstnärligt)
43.	Mashad Nemati, Hossein, 1980, et al. (författare) Design of High Efficiency Ka-Band Harmonically Tuned Power Amplifiers 2009 Ingår i: 2009 IEEE Radio and Wireless Symposium, RWS 2009; San Diego, CA; United States; 18 January 2008 through 22 January 2008. - 9781424426997 ; , s. 264-267 Konferensbidrag (refereegranskat)abstract A harmonically tuned power amplifier (PA)design approach is presented to provide high efficiencyperformance at Ka-band using a GaAs mHEMT devicetechnology. A single-stage monolithic-microwave integratedcircuit(MMIC) class-AB PA is designed and measured.The PA efficiency is optimized for a circuit topology whichallows harmonic load impedance terminations up to thethird harmonic. An output power of 14 dBm is measuredwith a small-signal gain of 14 dB and a maximum poweradded-efficiency (PAE) of 43%. Good agreement betweenmeasurement and simulation results is observed which allowsfurther investigations through harmonic load-pull simulationsusing the in-house large-signal model of the device. It is shownthat the PAE can be further increased to 50% by more carefulsecond and third harmonic load impedance terminations.
44.	Mashad Nemati, Hossein, 1980, et al. (författare) Single stage CMOS Power Amplifier at 23 GHz 2007 Ingår i: Abstarct and presentation in Workshop: RF Measurement Technology, for State of the Art Production and Design. Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract A single stage CMOS power amplifier (PA) is designed andcharacterized. According to simulations, a power added efficiency (PAE) of 20% is achieved with 5 dB of gain and 12 dBm of output power at 23GHz. Differences between measurement and simulation are observed. A through analysis explaining these differences is presented. Measurements show a frequency shift to 18.9 GHz with 10dBm of output power, PAE equal to 5%, and a gain of 3.2 dB. The frequency shift is mainly related to the effect of RF-pads which are measured to be as a parallel capacitor with a value of 200 fF. The design was based on device model provided by the foundry which did not include extrinsic parasitic components especially the gate resistance which is the main reason for gain degradation.
45.	Masud, M. Anowar, 1971, et al. (författare) 90 nm CMOS MMIC amplifier 2004 Ingår i: Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE. - 1529-2517. ; , s. 201 - 204 Konferensbidrag (refereegranskat)abstract Small signal amplifiers at 20 and 40 GHz, based on a 90 nm CMOS process are demonstrated. A gain of 5.8 dB at 20 GHz for single stage has been obtained with a 1 dB compression point at 1 dBm. The corresponding figures for the 40 GHz amplifiers are 6 dB and -5.75 dBm. Noise figure for the 20 GHz amplifier is 6.4 dB. Both single gate access and double gate access transistors have been used in the design. DC power consumption of the 20 GHz single stage amplifier was found to be 10 mW whereas for the 40 GHz double stage amplifier it is approximately 19 mW. Total circuit area is 0.7/spl times/0.8 mm/sup 2/ for the single stage and 1/spl times/0.7 mm/sup 2/ for the 40 GHz double stage amplifier.
46.	Motlagh, Bahar M., 1974, et al. (författare) Fully Integrated 60-GHz Single-Ended Resistive Mixer in 90-nm CMOS Technology 2005 Ingår i: Microwave and Wireless Components Letters, IEEE. ; 16:1, s. 25-27 Tidskriftsartikel (refereegranskat)abstract This letter presents the design and characterization of a fully integrated 60-GHz single-ended resistive mixer in a 90-nm CMOS technology. A conversion loss of 11.6dB, 1-dB compression point of 6dBm and IIP3 of 16.5dBm were measured with a local oscillator (LO) power of 4dBm and zero drain bias. The possibility of improvement in IIP3 with selective drain bias has been verified. A 3-dB improvement in IIP3 was obtained with 150-mV dc voltage applied at the drain. Microstrip transmission lines are used to realize matching and filtering at LO and radio frequency ports.
47.	Uz Zaman, Ashraf, 1975, et al. (författare) Validation of ridge gap waveguide performance using in-house TRL calibration kit 2010 Ingår i: EuCAP 2010 Fourth European Conference on Antennas and Propagation, Barcelona, 12-16 April 2010. - 9781424464319 Konferensbidrag (refereegranskat)abstract In this work, the low-loss performance of the recently evolved ridge gap waveguide technology has been demonstrated. A TRL calibration kit was designed to do the calibration of the manufactured ridge gap waveguide demonstrator. The calibrated S-parameters for the gap waveguide demonstrator are presented in this work and it is verified that the ridge gap waveguide work according to simulations with wide bandwidth and low loss. The loss of the gap waveguide section was found to be so low that it cannot be quantified for the chosen waveguide length due to measurement uncertainties arising from imperfect connectors, possible imperfections in standards of the TRL kit due to manufacturing tolerance, VNA random errors etc.
48.	Vickes, Hans-Olof, et al. (författare) The influence of the gate leakage current and the gate resistance on the noise and gain performances of 90-nm CMOS for micro- and millimeter-wave frequencies 2004 Ingår i: Microwave Symposium Digest , 2004 IEEE MTT-S International. - 0149-645X. ; 2, s. 971-974 Tidskriftsartikel (refereegranskat)abstract We report the experimental and theoretical evaluation of the noise and the high frequency gain performances applied to a very short channel 90-nm CMOS transistor. We show that gate leakage currents modify the behavior of the noise parameters Rn, Fmin and Zopt only in the low gigahertz range. The gate resistance, Rg, on the contrary, have influence on the noise performance over the complete frequency range. Noise parameters have been measured in the frequency range 2-26 GHz and the S-parameters have been measured up to 62.5 GHz. The proposed model has been used in the design of a 2-stage 40 GHz amplifier.
49.	Zirath, Herbert, 1955, et al. (författare) Balanced Colpitt Oscillator MMICs Designed for Ultra-Low Phase Noise 2005 Ingår i: Journal of Solid State Circuits. ; 40:10, s. 2077-89 Tidskriftsartikel (refereegranskat)
50.	Zirath, Herbert, 1955, et al. (författare) CMOS devices and circuits for microwave and millimeter wave applications 2006 Ingår i: Asia Pacific Conference APMC 2006 Yukohama. Konferensbidrag (refereegranskat)

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