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  • Issa, F., et al. (författare)
  • 4H-SiC neutron sensors based on ion implanted 10B neutron converter layer
  • 2015
  • Ingår i: 2015 4th International Conference on Advancements in Nuclear Instrumentation Measurement Methods and their Applications, ANIMMA 2015. - : Institute of Electrical and Electronics Engineers (IEEE). - 9781479999187
  • Konferensbidrag (refereegranskat)abstract
    • In the framework of the I-SMART project the main aim is to develop an innovative complete radiation detection system based on silicon carbide technology in view to detect neutrons (thermal and fast) and photons for harsh environments. In the present work two geometries have been realized based on ion implantation of boron. In the first geometry, 10B ions have been implanted into the Al metallic contact of a p-n diode to create the neutron converter layer. In the second geometry one single process has been used to realize both the p+-layer and the neutron converter layer. The technological processes followed to fabricate these detectors, with a study of their electrical behavior and their responses under thermal neutron irradiations are addressed in this paper.
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  • Issa, F., et al. (författare)
  • Study of the stability of 4H-SiC detectors by thermal neutron irradiation
  • 2015
  • Ingår i: European Conference on Silicon Carbide and Related Materials, ECSCRM 2014. - : Trans Tech Publications Inc.. - 9783038354789 ; , s. 875-878
  • Konferensbidrag (refereegranskat)abstract
    • Two types of 4H-SiC semiconductor detectors (D1 and D2) are realized based on ion implantation of10B inside the aluminum metallic contact. The first detector shows a high leakage current after10B implantation and low signal to noise ratio. However, improvements concerning the implantation parameters led to lower leakage current and thus to higher signal to noise ratio. Moreover such detectors show their stability under different thermal neutron fluxes showing the reproducible features of the pulse height spectra and same electrical behaviour before and after irradiation. Some of future using and interesting applications of such SiC detector devices -for non-charged particles (photons and/or neutrons) are expected in the frame of non-destructive assays, nuclear reactor monitoring, safeguards, oil and gas prospection [1,2]
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  • Resultat 1-4 av 4

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