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1.
  • Curcio, Davide, et al. (författare)
  • Current-driven insulator-to-metal transition without Mott breakdown in Ca2RuO4
  • 2023
  • Ingår i: Physical Review B. - 2469-9950. ; 108:16
  • Tidskriftsartikel (refereegranskat)abstract
    • The electrical control of a material's conductivity is at the heart of modern electronics. Conventionally, this control is achieved by tuning the density of mobile charge carriers. A completely different approach is possible in Mott insulators such as Ca2RuO4, where an insulator-to-metal transition (IMT) can be induced by a weak electric field or current. While the driving force of the IMT is poorly understood, it has been thought to be a breakdown of the Mott state. Using in operando angle-resolved photoemission spectroscopy, we show that this is not the case: The current-induced conductivity is caused by the formation of in-gap states with only a minor reorganization of the Mott state. Electronic structure calculations show that these in-gap states form at the boundaries of structural domains that emerge during the IMT. At such boundaries, the overall gap is drastically reduced, even if the structural difference between the domains is small and the individual domains retain their Mott character. The inhomogeneity of the sample is thus key to understanding the IMT, as it leads to a nonequilibrium semimetallic state that forms at the interface of Mott domains.
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2.
  • Horio, M., et al. (författare)
  • Orbital-selective metal skin induced by alkali-metal-dosing Mott-insulating Ca 2 RuO 4
  • 2023
  • Ingår i: Communications Physics. - 2399-3650. ; 6:1
  • Tidskriftsartikel (refereegranskat)abstract
    • Doped Mott insulators are the starting point for interesting physics such as high temperature superconductivity and quantum spin liquids. For multi-band Mott insulators, orbital selective ground states have been envisioned. However, orbital selective metals and Mott insulators have been difficult to realize experimentally. Here we demonstrate by photoemission spectroscopy how Ca2RuO4, upon alkali-metal surface doping, develops a single-band metal skin. Our dynamical mean field theory calculations reveal that homogeneous electron doping of Ca2RuO4 results in a multi-band metal. All together, our results provide evidence for an orbital-selective Mott insulator breakdown, which is unachievable via simple electron doping. Supported by a cluster model and cluster perturbation theory calculations, we demonstrate a type of skin metal-insulator transition induced by surface dopants that orbital-selectively hybridize with the bulk Mott state and in turn produce coherent in-gap states.
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