SwePub - sökning: WFRF:(Francis Leonard Deepak)

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1.	Oliveira, Kevin, et al. (författare) SiO$_x$ Patterned Based Substrates Implemented in Cu(In,Ga)Se$_2$ Ultrathin Solar Cells : Optimum Thickness 2022 Ingår i: IEEE Journal of Photovoltaics. - : Institute of Electrical and Electronics Engineers (IEEE). - 2156-3381 .- 2156-3403. ; 12:4, s. 954-961 Tidskriftsartikel (refereegranskat)abstract Interface recombination in sub-mu m optoelectronics has a major detrimental impact on devices' performance, showing the need for tailored passivation strategies to reach a technological boost. In this article, SiO$_x$ passivation based substrates were developed and integrated into ultrathin Cu(In,Ga)Se$_2$ (CIGS) solar cells. This article aims to understand the impact of a passivation strategy, which uses several SiO$_x$ layer thicknesses (3, 8, and 25 nm) integrated into high-performance substrates (HPS). The experimental study is complemented with 3-D lumerical finite-difference time-domain and 2-D Silvaco ATLAS optical and electrical simulations, respectively, to perform a decoupling of optical and electronic gains, allowing for a deep discussion on the impact of the SiO$_x$ layer thickness in the CIGS solar cell performance. This article shows that as the passivation layer thickness increases, a rise in parasitic losses is observed. Hence, a balance between beneficial passivation and optical effects with harmful architectural constraints defines a threshold thickness to attain the best solar cell performance. Analyzing their electrical parameters, the 8-nm novel SiO$_x$ based substrate achieved a light to power conversion efficiency value of 13.2%, a 1.3% absolute improvement over the conventional Mo substrate (without SiO$_x$).

Oliveira, Kevin, et al. (författare)
SiO$_x$ Patterned Based Substrates Implemented in Cu(In,Ga)Se$_2$ Ultrathin Solar Cells : Optimum Thickness
2022
Ingår i: IEEE Journal of Photovoltaics. - : Institute of Electrical and Electronics Engineers (IEEE). - 2156-3381 .- 2156-3403. ; 12:4, s. 954-961
Tidskriftsartikel (refereegranskat)abstract
- Interface recombination in sub-mu m optoelectronics has a major detrimental impact on devices' performance, showing the need for tailored passivation strategies to reach a technological boost. In this article, SiO$_x$ passivation based substrates were developed and integrated into ultrathin Cu(In,Ga)Se$_2$ (CIGS) solar cells. This article aims to understand the impact of a passivation strategy, which uses several SiO$_x$ layer thicknesses (3, 8, and 25 nm) integrated into high-performance substrates (HPS). The experimental study is complemented with 3-D lumerical finite-difference time-domain and 2-D Silvaco ATLAS optical and electrical simulations, respectively, to perform a decoupling of optical and electronic gains, allowing for a deep discussion on the impact of the SiO$_x$ layer thickness in the CIGS solar cell performance. This article shows that as the passivation layer thickness increases, a rise in parasitic losses is observed. Hence, a balance between beneficial passivation and optical effects with harmful architectural constraints defines a threshold thickness to attain the best solar cell performance. Analyzing their electrical parameters, the 8-nm novel SiO$_x$ based substrate achieved a light to power conversion efficiency value of 13.2%, a 1.3% absolute improvement over the conventional Mo substrate (without SiO$_x$).

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