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- Gnani, E., et al.
(författare)
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TFET-based inverter performance in the presence of traps and localized strain
- 2018
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Ingår i: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018. - : Institute of Electrical and Electronics Engineers (IEEE). ; , s. 29-32
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Konferensbidrag (refereegranskat)abstract
- This paper investigates the circuit-level performance of an inverter made by n- and p-type tunnel field-effect transistors (TFETs), integrated on the same InAs/Al0.05Ga0.95Sb technology platform, in the presence of interface traps and localized strain. From 3-D full-quantum simulations, interface traps are found to induce a significant degradation of the voltage gain, noise margin and transient performance. The effect of localized strain at the source/channel heterojunction caused by lattice mismatch, although beneficial, is unable to recover the circuit-level performance of the ideal case.
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- Gnani, E., et al.
(författare)
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TFET inverter static and transient performances in presence of traps and localized strain
- 2019
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Ingår i: Solid-State Electronics. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0038-1101 .- 1879-2405. ; 159, s. 38-42
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Tidskriftsartikel (refereegranskat)abstract
- This paper investigates the digital circuit-level performance of an inverter realised with n- and p-type tunnel field-effect transistors (TFETs) integrated on the same InAs/Al0.05Ga0.95Sb tech nology platform in the presence of interface traps and localized strain. The TFET-based inverter is simulated for two different I-OFF values, namely 100 nA/mu m and 10 pA/mu m to target both high-performance and low-power applications. Based on 3D full-quantum simulations, interface traps induce a significant degradation of the voltage gain, noise margin and transient performance despite the better subthreshold slope. The effect of localized strain at the source/channel heterojunction caused by lattice mismatch, while being beneficial in terms of on-current, is unable to recover the circuit-level performance of the ideal case. The device with traps and localized strain is able to outperform the ideal one only in terms of switching transients for I-OFF = 10 pA/mu m.
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- Vaziri, Sam, et al.
(författare)
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Going ballistic : Graphene hot electron transistors
- 2015
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Ingår i: Solid State Communications. - : Elsevier. - 0038-1098 .- 1879-2766. ; 224, s. 64-75
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Tidskriftsartikel (refereegranskat)abstract
- This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indicated potential for THz operation still hold true today, even with improved models that take non-idealities into account. Experimental results clearly demonstrate the basic functionality, with on/off current switching over several orders of magnitude, but further developments are required to exploit the full potential of the GBT device family. In particular, interfaces between graphene and semiconductors or dielectrics are far from perfect and thus limit experimental device integrity, reliability and performance.
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