| 1. |
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| 2. |
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| 3. |
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| 4. |
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| 5. |
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| 6. |
- Bruzzi, M, et al.
(författare)
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Radiation-hard semiconductor detectors for SuperLHC
- 2005
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Ingår i: Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment. - : Elsevier BV. - 0167-5087 .- 0168-9002. ; 541:1-2, s. 189-201
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Tidskriftsartikel (refereegranskat)abstract
- An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 1035 cm-2 s-1 has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 1016cm-2. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Float Zone silicon), the improvement of present detector designs and the understanding of the microscopic defects causing the degradation of the irradiated detectors. The latest advancements within the RD50 collaboration on radiation hard semiconductor detectors will be reviewed and discussed in this work.
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| 7. |
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| 8. |
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| 9. |
- Novak, R., et al.
(författare)
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Robotic fluidic coupling and interrogation of multiple vascularized organ chips
- 2020
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Ingår i: Nature Biomedical Engineering. - : Nature Research. - 2157-846X.
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Tidskriftsartikel (refereegranskat)abstract
- Organ chips can recapitulate organ-level (patho)physiology, yet pharmacokinetic and pharmacodynamic analyses require multi-organ systems linked by vascular perfusion. Here, we describe an ‘interrogator’ that employs liquid-handling robotics, custom software and an integrated mobile microscope for the automated culture, perfusion, medium addition, fluidic linking, sample collection and in situ microscopy imaging of up to ten organ chips inside a standard tissue-culture incubator. The robotic interrogator maintained the viability and organ-specific functions of eight vascularized, two-channel organ chips (intestine, liver, kidney, heart, lung, skin, blood–brain barrier and brain) for 3 weeks in culture when intermittently fluidically coupled via a common blood substitute through their reservoirs of medium and endothelium-lined vascular channels. We used the robotic interrogator and a physiological multicompartmental reduced-order model of the experimental system to quantitatively predict the distribution of an inulin tracer perfused through the multi-organ human-body-on-chips. The automated culture system enables the imaging of cells in the organ chips and the repeated sampling of both the vascular and interstitial compartments without compromising fluidic coupling.
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| 10. |
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| 11. |
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| 12. |
- Reed, B. P., et al.
(författare)
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Diamond (111) surface reconstruction and epitaxial graphene interface
- 2022
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Ingår i: Physical Review B. - 2469-9950. ; 105:20
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Tidskriftsartikel (refereegranskat)abstract
- The evolution of the diamond (111) surface as it undergoes reconstruction and subsequent graphene formation is investigated with angle-resolved photoemission spectroscopy, low energy electron diffraction, and complementary density functional theory calculations. The process is examined starting at the C(111)-(2×1) surface reconstruction that occurs following detachment of the surface adatoms at 920 ∘C, and continues through to the liberation of the reconstructed surface atoms into a freestanding monolayer of epitaxial graphene at temperatures above 1000 ∘C. Our results show that the C(111)-(2×1) surface is metallic as it has electronic states that intersect the Fermi level. This is in strong agreement with a symmetrically π-bonded chain model and should contribute to resolving the controversies that exist in the literature surrounding the electronic nature of this surface. The graphene formed at higher temperatures exists above a newly formed C(111)-(2×1) surface and appears to have little substrate interaction as the Dirac point is observed at the Fermi level. Finally, we demonstrate that it is possible to hydrogen-terminate the underlying diamond surface by means of plasma processing without removing the graphene layer, forming a graphene-semiconductor interface. This could have particular relevance for doping the graphene formed on the diamond (111) surface via tuneable substrate interactions as a result of changing the terminating species at the diamond-graphene interface by plasma processing.
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| 13. |
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| 14. |
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| 15. |
- Tabakov, S, et al.
(författare)
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Development of educational image databases and e-books for medical physics training
- 2005
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Ingår i: Medical Engineering & Physics. - : Elsevier BV. - 1873-4030 .- 1350-4533. ; 27:7, s. 591-598
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Tidskriftsartikel (refereegranskat)abstract
- Medical physics education and training requires the use of extensive imaging material and specific explanations. These requirements provide an excellent background for application of e-Learning. The EU projects Consortia EMERALD and EMIT developed five volumes of such materials, now used in 65 countries. EMERALD developed e-Learning materials in three areas of medical physics (X-ray diagnostic radiology, nuclear medicine and radiotherapy). EMIT developed e-Learning materials in two further areas: ultrasound and magnetic resonance imaging. This paper describes the development of these e-Learning materials (consisting of e-books and educational image databases). The e-books include tasks helping studying of various equipment and methods. The text of these PDF e-books is hyperlinked with respective images. The e-books are used through the readers' own Internet browser. Each Image Database (IDB) includes a browser, which displays hundreds of images of equipment, block diagrams and graphs, image quality examples, artefacts, etc. Both the e-books and IDB are engraved on five separate CD-ROMs. Demo of these materials can be taken from www.emerald2.net.
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| 16. |
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| 18. |
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| 19. |
- Al-Hamadandy, Raied, et al.
(författare)
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Oxygen vacancy migration in compressively strained SrTiO3
- 2013
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 113:2
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Tidskriftsartikel (refereegranskat)abstract
- The intrinsic properties of strontium titanate render it promising in applications such as gate dielectrics and capacitors. However, there is growing evidence that oxygen vacancies significantly impact upon its use, with the diffusion and deep donor level of the oxygen vacancy leading to electrical leakage. Where grown epitaxially on a lattice mismatched substrate, SrTiO 3 undergoes bi-axial strain, altering its crystal structure and electronic properties. In this paper, we present the results of first-principles simulations to evaluate the impact of strain in a (001) plane upon the migration of oxygen vacancies. We show that in the range of strains consistent with common substrate materials, diffusion energies in different directions are significantly affected, and for high values of strain may be altered by as much as a factor of two. The resulting diffusion anisotropy is expected to impact upon the rate at which oxygen vacancies are injected into the films under bias, a critical factor in the leakage and resistive switching seen in this material
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| 20. |
- Al-Hamadany, R., et al.
(författare)
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Impact of tensile strain on the oxygen vacancy migration in SrTiO3 : Density functional theory calculations
- 2013
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 113:22
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Tidskriftsartikel (refereegranskat)abstract
- Strontium titanate is a promising dielectric material for device applications including capacitors and gate dielectrics. However, oxygen vacancies, which are inevitable donor defects mobile under bias at room temperature, lead to undesirable leakage current in SrTiO3 thin films. Epitaxially grown SrTiO3 on lattice mismatched substrates leads to strained SrTiO3, inducing structural phase transitions from a cubosymmetric non-ferroelectric geometry to tetragonal and orthorhombic structures, depending upon the sign of the strain. In this study, density functional calculations have been performed to determine the impact of isotropic biaxial tensile strain in a (001) plane upon the phase of SrTiO3 and the activation energy for the migration of oxygen vacancies in such strained SrTiO3. The phase transition of the host material yields anisotropy in oxygen vacancy diffusion for diffusion within and between planes parallel to the strain. We found a general reduction in the barrier for diffusion within and normal to the plane of tensile strain. The inter-plane diffusion barrier reduces up to 25% at high values of strain. The variation in the barrier corresponding to in-plane diffusion is smaller in comparison to inter-plane diffusion. Finally, we reflect upon how the interplay between lattice strain with native defects plays a crucial role in the conduction mechanism of thin film, strained SrTiO3
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| 21. |
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| 22. |
- Carvalho, A., et al.
(författare)
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Self-interstitial in germanium
- 2007
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Ingår i: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 99:17, s. 175502-
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Tidskriftsartikel (refereegranskat)abstract
- Low-temperature radiation damage in n- and p-type Ge is strikingly different, reflecting the charge-dependent properties of vacancies and self-interstitials. We find, using density functional theory, that in Ge the interstitial is bistable, preferring a split configuration when neutral and an open cage configuration when positively charged. The split configuration is inert while the cage configuration acts as a double donor. We evaluate the migration energies of the defects and show that the theory is able to explain the principal results of low-temperature electron-irradiation experiments.
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| 23. |
- Carvalho, A., et al.
(författare)
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Self-interstitials and Frenkel pairs in electron-irradiated germanium
- 2007
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Ingår i: Physica. B, Condensed matter. - : Elsevier BV. - 0921-4526 .- 1873-2135. ; 401-402, s. 495-498
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Tidskriftsartikel (refereegranskat)abstract
- First principles calculations were used to study the structures and electrical levels of the self-interstitial in Ge. We considered the possibility of structural changes consequent with change in charge state and show these have important implications in the mobility and electrical activity of the defect. The theoretical model is compared to the results of low temperature electron irradiation in germanium reported in the literature.
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| 24. |
- Coomer, B.J., et al.
(författare)
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The divacancy in silicon and diamond
- 1999
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Ingår i: Physica. B, Condensed matter. - 0921-4526 .- 1873-2135. ; 273-274, s. 520-523
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Tidskriftsartikel (refereegranskat)abstract
- First-principles studies of the divacancy (V2) in both silicon and diamond are reported. We demonstrate that the contrasting experimental spin-density localisation of both systems can be explained through the one-electron pictures arising from opposing distortions
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| 25. |
- Eberlein, T.A.G., et al.
(författare)
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Self-interstitial clusters in silicon
- 2001
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Ingår i: Physica. B, Condensed matter. - 0921-4526 .- 1873-2135. ; 308-310, s. 454-457
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Tidskriftsartikel (refereegranskat)abstract
- Although there have been made many calculations for structures of the self-interstitial in Si and small aggregates of interstitials, In, there have been relatively few attempts to relate these defects with experimental data. Here, we discuss the assignments of the self-interstitial to the AA12 EPR centre and the di-interstitial to the P6 EPR centre.
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| 26. |
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| 27. |
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| 28. |
- Goss, J.P., et al.
(författare)
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Electrical and optical properties of rod-like defects in silicon
- 2004
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 85:20, s. 4633-4635
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Tidskriftsartikel (refereegranskat)abstract
- Self-interstitials in silicon can aggregate to form rod-like defects (RLDs) having both electrical and optical activity. We carry out local density functional calculations for both {113} and {111} RLDs to determine their structures and electrical activity. We find that small {113} RLDs are more stable than {111} RLDs but this reverses for larger defects. We attribute the electrical activity of {113} RLDs found in deep level transient spectroscopy studies with the bounding dislocations and the 0.903 eV photoluminescence to vacancy point defects lying on the habit plane.
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| 29. |
- Goss, J.P., et al.
(författare)
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Planar interstitial aggregates in Si
- 2002
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Ingår i: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 14:48, s. 12843-12853
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Tidskriftsartikel (refereegranskat)abstract
- Self-interstitials in silicon aggregate to form rod-like defects aligned along [110] directions and inhabiting either {111} or {113} crystallographic planes. These systems are known to be electrically and optically active. We present the results of first-principles calculations on the structure and energetics for candidate structures contained within the {113}, {111} and {001} planes and compare the results with experiment.
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| 30. |
- Jones, R., et al.
(författare)
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Self-interstitial clusters in silicon
- 2002
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Ingår i: Nuclear Instruments and Methods in Physics Research Section B. - 0168-583X .- 1872-9584. ; 186:1, s. 10-18
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Tidskriftsartikel (refereegranskat)abstract
- Although there have been many calculations of the structures of the self-interstitial in Si and small aggregates of interstititals, In, there has been little attempt to relate the defects with experimental data. Here we discuss the assignments of the self-interstitial to the AA12 electron paramagnetic resonance (EPR) centre, and the tri-interstitial and tetra-interstitial to the W-optical centre and the B3 EPR centre, respectively. Difficulties in the assignment of I2 to the P6 EPR centre are also noted.
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| 31. |
- Jönsson, Bo-Anders, et al.
(författare)
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EMERALD & EMIT – worldwide computer aided education and training packages in medical physics
- 2005
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Ingår i: CAL-laborate. - 1443-4482. ; 13:June, s. 10-15
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Tidskriftsartikel (refereegranskat)abstract
- This paper describes the development of two web based education and training packages EMERALD and EMIT designed to meet the training needs of professional medical physicists. The programme has been developed over a number of years by collaboration between hospitals and universities across Europe. The programme concentrates on assisting competence development in five initial areas; diagnostic radiology, nuclear medicine, magnetic resonance tomography, ultrasound and radiotherapy. Each of the topic areas includes around 50 training tasks in 5 hypertext workbooks, which are supplemented by an image database relevant to each topic. The training materials have been extensively refereed during their development and are now in use in 65 countries across the globe. Initial evaluation has shown that the material enhances the training experience and produces a more consistent output.
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| 32. |
- Markevich, A., et al.
(författare)
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First-principles study of hydrogen and fluorine intercalation into graphene-SiC(0001) interface
- 2012
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 86:4
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Tidskriftsartikel (refereegranskat)abstract
- The properties of epitaxial graphene on SiC substrates can be modified by intercalation of different atomic species. In this work, mechanisms of hydrogen intercalation into the graphene-SiC(0001) interface, and properties of hydrogen and fluorine intercalated structures have been studied with the use of density functional theory. Our calculations show that the intercalation of hydrogen and fluorine into the interface is energetically favorable. Energy barriers for diffusion of atomic and molecular hydrogen through the interface graphene layer with no defects and graphene layers containing Stone-Wales defect or two- and four-vacancy clusters have been calculated. It is argued that diffusion of hydrogen towards the SiC surface occurs through the hollow defects in the interface graphene layer. It is further shown that hydrogen easily migrates between the graphene layer and the SiC substrate and passivates the surface Si bonds, thus causing the graphene layer decoupling. According to the band structure calculations the graphene layer decoupled from the SiC(0001) surface by hydrogen intercalation is undoped, while that obtained by the fluorine intercalation is p-type doped.
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| 33. |
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| 34. |
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| 35. |
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| 36. |
- Atumi, M.K., et al.
(författare)
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Hyperfine interaction of H-divacancy in diamond
- 2020
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Ingår i: Results in Physics. - : Elsevier. - 2211-3797. ; 16
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Tidskriftsartikel (refereegranskat)abstract
- We present a first principles density functional theory study of microscopic properties of hydrogen defect centres in diamond. Several configurations, involving interstitial hydrogen impurities, have been considered either forming with other defects, such as hydrogen defects and vacancies. The atomic structures, and hyperfine parameters of hydrogen result compared with the experimental data on electrically active centres in synthetic diamond. Based on Local density functional theory our calculations are in excellent agreement with one interpretation of electron paramagnetic resonance of hydrogen in diamond.
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| 37. |
- Carvalho, A, et al.
(författare)
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First-principles study of the diffusion mechanisms of the self-interstitial in germanium
- 2008
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Ingår i: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 20:13
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Tidskriftsartikel (refereegranskat)abstract
- The self-interstitial in germanium can assume multiple configurations depending on the temperature and charge state. Here, we employ a first-principles density functional method to investigate the diffusion mechanisms of this defect. The energy barriers associated with the transformation between different structures are determined by the climbing nudged elastic band method, as a function of the charge state. The relation between the thermodynamic properties of the self-interstitial and the temperature evolution of electron radiation damage in germanium are discussed.
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| 38. |
- Jones, R, et al.
(författare)
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Theory of nickel and nickel-hydrogen complexes in silicon
- 1995
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Ingår i: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 75:14, s. 2734-2737
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Tidskriftsartikel (refereegranskat)abstract
- Spin-polarized local density functional cluster calculations are carried out on substitutional Ni and Ni-H2 complexes. We find that Ni- undergoes a Jahn-Teller distortion along 〈100〉 with Ni moving slightly along the cube axis. The distorted state gives b1, b2, and a1 levels in ascending order of energies within the gap in agreement with experiment. Several candidate NiH2 defects are investigated: the lowest energy structure consists of a substitutional Ni atom together with two H atoms at antibonding sites to two Si neighbors of Ni. This gives H related vibrational modes and a spin-polarized charge density close to those reported for Pt-H2.
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| 39. |
- Jones, R, et al.
(författare)
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Theory of the NiH2 complex in Si and the CuH2 complex in GaAs
- 1995
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Ingår i: ICDS-18. ; , s. 921-925
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Konferensbidrag (refereegranskat)abstract
- Spin-polarised local density functional cluster calculations are carried out on substitutional Ni in Si and Cu in GaAs along with TM-H-2 complexes. The Jahn-Teller distortion for Ni in Si leads to a slight displacement along (100) in agreement with EPR experiments. Several models of NiH2 are investigated and it is shown that one, with H located at anti-bonding sites to two of the Si neighbours of Ni, has the lowest energy and possesses H related local vibrational modes close to those reported for Pt-H-2. A similar structure is found for CuH2 in GaAs. The electronic properties of the complexes are described in terms of the vacancy model of TM impurities.
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| 40. |
- Pinedo, Cristina, et al.
(författare)
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Isotopic Labeling Studies Reveal the Patulin Detoxification Pathway by the Biocontrol Yeast Rhodotorula kratochvilovae LS11
- 2018
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Ingår i: Journal of Natural Products. - : American Chemical Society (ACS). - 0163-3864 .- 1520-6025. ; 81:12, s. 2692-2699
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Tidskriftsartikel (refereegranskat)abstract
- Patulin (1) is a mycotoxin contaminant in fruit and vegetable products worldwide. Biocontrol agents, such as the yeast Rhodotorula kratochvilovae strain LS11, can reduce patulin (1) contamination in food. R. kratochvilovae LS11 converts patulin (1) into desoxypatulinic acid (DPA) (5), which is less cytotoxic than the mycotoxin (1) to in vitro human lymphocytes. In the present study, we report our investigations into the pathway of degradation of patulin (1) to DPA (5) by R. kratochvilovae. Isotopic labeling experiments revealed that 5 derives from patulin (1) through the hydrolysis of the γ-lactone ring and subsequent enzymatic modifications. The ability of patulin (1) and DPA (5) to cause genetic damage was also investigated by the cytokinesis-block micronucleus cytome assay on in vitro human lymphocytes. Patulin (1) was demonstrated to cause much higher chromosomal damage than DPA (5).
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| 41. |
- Resende, A, et al.
(författare)
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Theory of gold-hydrogen complexes in silicon
- 1997
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Ingår i: Defects in Semiconductors. - Uetikon-Zuerich : Trans Tech Publications Inc.. - 0878497862 ; , s. 295-300
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Konferensbidrag (refereegranskat)
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| 42. |
- Tiwari, Amit K., et al.
(författare)
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Bromine functionalisation of diamond : an ab initio study
- 2012
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Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 209:9, s. 1703-1708
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Tidskriftsartikel (refereegranskat)abstract
- Immobilisation of organic molecules on diamond surfaces is of great interest for biomedical applications. While H, F and Cl terminations, as a linker, have been studied extensively, the bromination of diamond is not fully understood. We have performed ab initio simulations to investigate the chemisorption of Br onto C- and H-terminated diamond (100) surfaces. We find that due to steric interaction, 100% surface coverage of Br is not stable, however, surface coverage up to around 50% is theoretically achievable. The chemisorption energies corresponding to lower surface coverages of Br are found comparable to those of hydrogen. Partial surface coverages (25 and 50%) of Br on C-terminated diamond exhibit nearly equal positive electron affinities of 0.45 and 0.52 eV, respectively. Addition of hydrogen reduces the electron affinity and for 25% of Br on an otherwise H-terminated surface, a negative electron affinity of 0.57 eV is calculated.
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| 43. |
- Tiwari, Amit K., et al.
(författare)
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Effect of different surface coverages of transition metals on the electronic and structural properties of diamond
- 2012
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Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 209:9, s. 1697-1702
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Tidskriftsartikel (refereegranskat)abstract
- The presence of adsorbate species on diamond surfaces, even in relatively small concentrations, strongly influences electrical, chemical and structural properties. Despite the technological significance, coverage of diamond by transition metals has received relatively little attention. In this paper, we present the results of density functional calculations examining up to a mono-layer of transition metals on the (001) diamond surface. We find that addition of carbide forming species, such as Ti, results in significantly higher adsorption energies at all surface coverages relative to non-carbide forming species. For monolayer coverage by Cu, and sub-monolayer coverage by Ti, we find a negative electron affinity. We propose that based upon the electron affinities and binding energies, metal-terminated (001) diamond surfaces are promising candidates for electron emission device applications.
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| 44. |
- Tiwari, Amit K., et al.
(författare)
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Thermodynamic stability and electronic properties of F- and Cl-terminated diamond
- 2012
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Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 209:9, s. 1709-1714
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Tidskriftsartikel (refereegranskat)abstract
- The chemical termination of diamond has important consequences for its electrical and chemical properties. Despite the impressive potential for various scientific and technological applications, halogen termination of diamond is not fully understood. We find using first principle atomistic simulation that 100% fluorinated diamond (100) surface exhibit a chemically stable positive electron affinity of 2.13 eV, whereas 100% chlorination is energetically unfavourable. The positive electron affinity of halogenated diamond generally increases with increasing surface coverage. For mixed halogen and hydrogen termination, a wide range of negative and positive electron affinities can be achieved theoretically by varying the relative concentrations of adsorbed species.
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