| 1. |
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| 2. |
- Sobis, Peter, 1978, et al.
(författare)
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SWI 1200/600 GHz highly integrated receiver front-ends
- 2015
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Ingår i: 36th ESA Antenna Workshop on Antennas and RF Systems for Space Science, ESA/ESTEC ,Noordwijk, The Netherlands; 6-9 Oct. 2015. ; session S3.1.2
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Konferensbidrag (refereegranskat)
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| 3. |
- Sobis, Peter, 1978, et al.
(författare)
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Ultra Low Noise 600/1200 GHz and 874 GHz GaAs Schottky Receivers for SWI and ISMAR
- 2016
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Ingår i: Twenty-seventh International Symposium on Space Terahertz Technology (ISSTT).
-
Konferensbidrag (refereegranskat)abstract
- Omnisys Instruments is responsible for the 600/1200 GHz broadband front-end receivers and back-end spectrometer hardware for the Submillimeter Wave Instrument (SWI) part of the Jupiter Icy moons Explorer (JUICE) mission, and for the development of the dual-polarization 874 GHz spectrometer channels for the airborne icecloud imager instrument ISMAR. We will present our development of these highly integrated heterodyne receivers which are based on membrane integrated GaAs Schottky diode mixer and multiplier circuit technology, and InP HEMT MMIC LNA technology from Chalmers University of Technology. Preliminary results at room temperature on the 1200 GHz breadboard prototypes show on a typical DSB receiver noise below 3000 K in the 1030 GHz-1220 GHz frequency range with only 1-3 mW of LO power. For the 874 GHz receiver flight modules a record low double sideband noise of 2500 K was obtained with only 2.3 mW of LO pump power. Both the 1200 GHz and 874 GHz subharmonically pumped Schottky mixer designs have been based on the broadband SWI 600 GHz channel mixer design, which had a repeatable receiver noise performance below 1200K with less than 2 mW of pump power at room temperature. All together these results are setting new standards for critical receiver hardware operating at room temperature used in instrumentation for atmospheric research and remote sensing applications.
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| 4. |
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| 5. |
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| 6. |
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| 7. |
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| 8. |
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| 9. |
- Borg, Malin, 1978, et al.
(författare)
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Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain
- 2008
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101. ; 52:5, s. 775-781
-
Tidskriftsartikel (refereegranskat)abstract
- The effect of gate-length variation on DC and RF performance of InAs/AlSb HEMTs, biased for low DC power consumption or high gain, is reported. Simultaneously fabricated devices, with gate lengths between 225 nm and 335 nm, have been compared. DC measurements revealed higher output conductance gds and slightly increased impact ionization with reduced gate length. When reducing the gate length from 335 nm to 225 nm, the DC power consumption was reduced by approximately 80% at an fT of 120 GHz. Furthermore, a 225 nm gate-length HEMT biased for high gain exhibited an extrinsic fT of 165 GHz and an extrinsic fmax of 115 GHz, at a DC power consumption of 100 mW/mm. When biased for low DC power consumption of 20 mW/mm the same HEMT exhibited an extrinsic fT and fmax of 120 GHz and 110 GHz, respectively.
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| 10. |
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| 11. |
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| 12. |
- Cao, Haiying, 1982, et al.
(författare)
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Linearization of Efficiency-Optimized Dynamic Load Modulation Transmitter Architectures
- 2010
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 58:4, s. 873-881
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, a detailed linearization procedure for dynamic load modulation (DLM) transmitter architectures is proposed for the first time. Compared with the conventional single-input/single-output digital predistortion (DPD) approach used with traditional power amplifiers (PAs), the proposed linearization scheme is based on a regular memory DPD in combination with an efficiency-optimized static one-to-two mapping inverse model, which constructs the predistorted input signals to the DLM transmitter. The time-alignment issue, which is very important to this dual-input architecture, is also considered. The proposed technique is demonstrated by a 1-GHz 10-W LDMOS PA that employs a varactor-based tunable matching network. A normalized mean square error of $-{hbox {35 dB}}$, and adjacent channel leakage ratio of $-hbox{43 dBc}$ is achieved, with an average power-added efficiency of 53% for a single-carrier WCDMA signal with 7-dB peak-to-average ratio. Finally, it is shown that the time-alignment sensitivity is relaxed when the proposed linearization scheme is used. This means that the overall complexity of the transmitter implementation can be reduced.
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| 13. |
- Cha, Eunjung, 1985, et al.
(författare)
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0.3-14 and 16-28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers
- 2018
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 66:11, s. 4860-4869
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Tidskriftsartikel (refereegranskat)abstract
- We present two monolithic microwave integrated circuit (MMIC) cryogenic broadband low-noise amplifiers (LNAs) based on the 100 nm gate length InP high-electron mobility transistor technology for the frequency range of 0.3-14 and 16-28 GHz. The 0.3-14 GHz three-stage LNA exhibited a gain of 41.6 ± 1.4 dB and an average noise temperature of 3.5 K with a minimum noise temperature of 2.2 K at 6 GHz when cooled down to 4 K. The 16-28 GHz three-stage LNA showed a gain of 32.3 ± 1.8 dB and an average noise temperature of 6.3 K with a minimum noise temperature of 4.8 K at 20.8 GHz at the ambient temperature of 4 K. This is the first demonstration of cryogenic MMIC LNA covering the whole K-band. To the best of the authors' knowledge, the cryogenic MMIC LNAs demonstrated the state-of-the-art noise performance in the 0.3-14 and 16-28 GHz frequency range.
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| 14. |
- Cha, Eunjung, 1985, et al.
(författare)
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A 300-mu W Cryogenic HEMT LNA for Quantum Computing
- 2020
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Ingår i: PROCEEDINGS OF THE 2020 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS). - 0149-645X .- 2576-7216. - 9781728168159 ; , s. 1299-1302
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Konferensbidrag (refereegranskat)abstract
- This paper reports on ultra-low power 4-8 GHz (C-band) InP high-electron mobility transistor (HEMT) cryogenic low-noise amplifiers (LNAs) aimed for qubit amplification in quantum computing. We have investigated dc power dissipation in hybrid three-stage cryogenic LNAs using 100-nm gate length InP HEMTs with different indium content in the channel (65% and 80%). The noise performance at 300 K was found to be comparable for both channel structures. At 5 K, an LNA with 65% indium channel exhibited significantly lower noise temperature at any dc power dissipation compared to the LNA with 80% indium channel. The LNA with 65% indium channel achieved an average noise of 3.2 K with 23 dB gain at an ultra-low power consumption of 300 mu W. To the best of authors' knowledge, the LNA exhibited the lowest noise temperature to date for sub-milliwatt power cryogenic C-band LNAs.
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| 15. |
- Cha, Eunjung, 1985, et al.
(författare)
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Cryogenic low-noise InP HEMTs: A source-drain distance study
- 2016
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Ingår i: 2016 Compound Semiconductor Week, CSW 2016. - 9781509019649 ; , s. Article number 7528576-
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Konferensbidrag (refereegranskat)abstract
- The scaling effect of the source-drain distance was investigated in order to improve the performance of low-noise InP HEMTs at cryogenic temperatures 4-15 K. The highest dc transconductance at an operating temperature of 4.8 K and low bias power was achieved at a source-drain distance of 1.4 mu m. The extracted HEMT minimum noise temperature was 0.9 K at 5.8 GHz for a 3-stage 4-8 GHz hybrid low-noise amplifier at 10 K.
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| 16. |
- Cha, Eunjung, 1985, et al.
(författare)
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InP HEMTs for Sub-mW Cryogenic Low-Noise Amplifiers
- 2020
-
Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 41:7, s. 1005-1008
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Tidskriftsartikel (refereegranskat)abstract
- This paper reports on a 100-nm gate length InP high-electron-mobility transistor (HEMT) technology for cryogenic low-noise amplifiers (LNAs) with ultra-low power dissipation of 112 mu W. This result was obtained by using 100-nm gate length InP HEMTs with improved transconductance at low drain current through a scaled-down gate-channel distance while maintaining a low gate leakage current with the use of an InP etch stop layer and Pt gate metal. The noise performance of InP HEMTs was demonstrated in a 4-8 GHz (C-band) three-stage hybrid LNA at the ambient temperature of 5 K. At a dc power dissipation of 300 mu W, the average noise temperature was 2.8 K with 27 dB gain. At a dc power dissipation of 112 mu W, the LNA exhibited an average noise temperature of 4.1 K with a gain of 20 dB. The presented results demonstrate the large potential of InP HEMT technology for sub-mW cryogenic LNA design.
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| 17. |
- Cha, Eunjung, 1985, et al.
(författare)
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Optimization of Channel Structures in InP HEMT Technology for Cryogenic Low-Noise and Low-Power Operation
- 2023
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Ingår i: IEEE Transactions on Electron Devices. - 1557-9646 .- 0018-9383. ; 70:5, s. 2431-2436
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Tidskriftsartikel (refereegranskat)abstract
- We report the impact from channel composition on the cryogenic low-noise performance at low dc power for a 100-nm gate-length InGaAs-InAlAs-InP high-electron mobility transistor (HEMT). Two indium (In) channel compositions, 65% and 80%, were studied by dc and RF characterization at 300 and 5 K. For the cryogenic low-noise optimization, it was important to increase the transconductance to gate–source capacitance ratio in the weak inversion region implying that a higher maximum cutoff frequency in the HEMT does not guarantee lower noise. The HEMT noise performance was obtained from noise measurements in a hybrid three-stage 4–8-GHz ( $\textit{C}$ -band) low-noise amplifier (LNA) down to 300- $\mu$ W dc power dissipation. While the HEMT LNA noise performance for both the channel compositions at 300 K was found to be comparable, the HEMT LNA at 5 K with 65% In channel showed a minimum noise temperature of 1.4 K, whereas the noise temperature in the HEMT LNA with 80% In channel HEMTs increased to 2.4 K. The difference in the noise became more pronounced at reduced dc power dissipation. The ultralow dc power of 300 $\mu$ W demonstrated for a cryogenic $\textit{C}$ -band LNA with an average noise temperature of 2.9 K and 24-dB gain is of interest for future qubit read-out electronics at 4 K.
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| 18. |
- Cha, Eunjung, 1985, et al.
(författare)
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Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka- and Q-Band LNAs
- 2017
-
Ingår i: IEEE Transactions on Microwave Theory and Techniques. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9480 .- 1557-9670. ; 65:12, s. 5171-5180
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Tidskriftsartikel (refereegranskat)abstract
- We investigate the cryogenic stability of two-finger 100-nm gate-length InP HEMTs aimed for Ka- and Q-band ultra-low noise amplifiers (LNAs). InP HEMTs with unit gate widths ranging between 30 and 50 mu m exhibit unstable cryogenic behavior with jumps in drain current and discontinuous peaks in transconductance. We also find that shorter gate length enhances the cryogenic instability. We demonstrate that the instability of two-finger transistors can be suppressed by either adding a source air bridge, connecting the back end of gates, or increasing the gate resistance. A three-stage 24-40 GHz and a four-stage 28-52-GHz monolithic microwave-integrated circuit LNA using the stabilized InP HEMTs are presented. The Ka-band amplifier achieves a minimum noise temperature of 7 K at 25.6 GHz with an average noise temperature of 10.6 K at an ambient temperature of 5.5 K. The amplifier gain is 29 dB +/- 0.6 dB. The Q-band amplifier exhibits minimum noise temperature of 6.7 K at 32.8 GHz with average noise temperature of 10 K at ambient temperature of 5.5 K. The amplifier gain is 34 dB +/- 0.8 dB. To our knowledge, the Ka- and Q-band amplifiers demonstrate the lowest noise temperature reported so far for InP cryogenic LNAs.
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| 19. |
- Cha, Eunjung, 1985, et al.
(författare)
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Two-finger InP HEMT design for stable cryogenic operation of ultra-low-noise Ka-band LNAs
- 2017
-
Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781509063604 ; , s. 168-171
-
Konferensbidrag (refereegranskat)abstract
- We have investigated the cryogenic stability of two-finger InP HEMTs aimed for Ka-band ultra-low noise amplifiers (LNAs). Unlike two-finger transistors with a large gate-width above 2 χ 50 μm, the transistors with a small gate-width exhibit unstable cryogenic behavior. The instability is suppressed by adding a source air-bridge. The stabilizing effect of the air-bridge is demonstrated both on device and circuit level. A three-stage 2440 GHz monolithic microwave integrated circuit (MMIC) LNA using a stabilized 100-nm HEMT technology is presented. The amplifier achieves a record noise temperature of 7 K at 25.6 GHz with an average noise of 10.6 K across the whole band at an ambient temperature of 5.5 K. The amplifier gain is 29 dB ± 0.6 dB exhibiting very stable and repeatable operation. To our knowledge, this amplifier presents the lowest noise temperature reported so far for InP cryogenic LNAs covering the Ka-band.
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| 20. |
- Chehrenegar, Pirooz, 1964, et al.
(författare)
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Design and characterization of a highly linear 3 GHz GaN HEMT amplifier
- 2011
-
Ingår i: 2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2011. Vienna, 18-19 April 2011. - 9781457706493
-
Konferensbidrag (refereegranskat)abstract
- In this paper a highly linear amplifier using an in-house gallium nitride (GaN) high electron mobility transistor (HEMT) technology is presented. A 3 dB bandwidth of 2.7-3.6 GHz with a maximum gain of 18 dB was measured. The output third-order intercept point (OIP3) was measured to 39 dBm with a maximum power consumption of 2.1 W. With a reduction of power consumption to 1 W the noise figure was improved by 0.6 dB while the OIP3 was degraded 3 dB.
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| 21. |
- Chehrenegar, Pirooz, 1964, et al.
(författare)
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Highly linear 1-3 GHz GaN HEMT low-noise amplifier
- 2012
-
Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467310871
-
Konferensbidrag (refereegranskat)abstract
- A highly linear low-noise amplifier (LNA) based on a commercial Gallium Nitride (GaN) high electron mobility transistor (HEMT) technology is presented. The amplifier can be operated at three frequency bands of 1, 2 and 3 GHz. The maximum measured gain is 31 dB at 1GHz and the output referred third-order intercept point (OIP3) is constant for all three frequency bands and equal to 41±1 dBm at a power consumption of L.2 W. A minimum noise figure (NF) of 0.5 dB is measured for the amplifier at the same bias point demonstrating the simultaneous linearity and low noise performance. The presented performance together with the reasonably low power consumption is outstanding in comparison with recently published amplifiers in GaN technology and available commercial GaAs LNAs.
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| 22. |
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| 23. |
- Desplanque, L., et al.
(författare)
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AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs
- 2012
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 100:26
-
Tidskriftsartikel (refereegranskat)abstract
- The influence of the growth conditions at the AlSb/GaAs interface on the electron mobility in AlSb/InAs heterostructures is investigated. We show that an excessive antimony flux during the initial stage of the AlSb buffer growth leads to a strong anisotropy of electron mobility in InAs between [110] and [1-10] crystallographic orientations. This anisotropy is attributed to the formation of trenches oriented along the [1-10] direction in the InAs channel. Transmission electron microscopy reveals that these trenches are directly related to twinning defects originating from the AlSb/GaAs interface.
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| 24. |
- Ducournau, G., et al.
(författare)
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200 GHz communication system using unipolar InAs THz rectifiers
- 2013
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Ingår i: International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz. - 2162-2027 .- 2162-2035. - 9781467347174
-
Konferensbidrag (refereegranskat)abstract
- We report on the first use of a THz detector based on InAs rectifying nanochannels in a communication system. The transmitter is composed of an electronic multiplication chain, externally amplitude modulated at the input signal. The system has been driven at 200 GHz and up to 500 Mbps data signals have been transmitted in an indoor configuration. In contrast to most nanodevices, the InAs detector has a low impedance (580 ω) and is therefore easily loaded by 50 ω electronics. The data rate limitation is mainly coming from parasitics coupled in the board. © 2013 IEEE.
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| 25. |
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| 26. |
- García-Pérez, Ó, et al.
(författare)
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Experimental analysis of shot-noise suppression in InGaAs/InAlAs recessed planar diodes at room temperature
- 2015
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Ingår i: 2015 International Conference on Noise and Fluctuations, ICNF 2015. - 9781467383356
-
Konferensbidrag (refereegranskat)abstract
- In this work, current noise measurements of submicron InGaAs/InAlAs recessed planar diodes are presented. The presence of a barrier in the potential profile under the source side of the recess may affect the statistics of passage of carriers, which in turn would lead to suppressed shot noise levels. However, evidencing this noise suppression from the measurements is challenging, due to the undesired effects from the accesses and contact resistances. The presented results are provided as a starting point for a future de-embedding process able to precisely determine the actual noise properties below the recess.
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| 27. |
- García-Pérez, Ó, et al.
(författare)
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Shot-noise suppression effects in InGaAs planar diodes at room temperature
- 2015
-
Ingår i: Journal of Physics: Conference Series. - : IOP Publishing. - 1742-6588 .- 1742-6596. ; 647:1
-
Konferensbidrag (refereegranskat)abstract
- In this work, the noise characteristics of InGaAs planar diodes are studied. The presence of a recessed region originates a barrier in the potential profile, which can modulate the passage of ballistic carriers along the structure. This effect, in turn, may lead to suppressed levels of noise with respect to the full Poissonian value due to Coulomb interaction. With the aim of evidencing such phenomenon, the noise properties of a set of devices with different dimensions have been measured at room temperature. Some evidence of potential shot-noise suppression is observed in the results, but the undesired effect of resistive contacts and accesses has been found to be a limiting factor to quantify the suppression accurately.
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| 28. |
-
GigaHertz Symposium 2008
- 2008
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Samlingsverk (redaktörskap) (refereegranskat)abstract
- The GigaHertz Symposium is the Nordic meeting place for presenting new findings in GHz technologies: Components, circuits and sub-systems for wireless / wireline communication, and sensing. It is now time for the 9th GigaHertz Symposium. This time, the event is carried out on 5-6 March 2008 at Chalmers campus, Göteborg, Sweden. The arranger is Chalmers University of Technology.At the GHz Symposium 2008, you can find presentations from a vast range of R&D players extending from 1 GHz to 1 THz and beyond. This time, we are also happy to present outstanding invited speakers who will present RF/microwavecommunication and sensor technologies for applications ranging from intelligent transmitters for wireless communication to cryogenic cooled receivers for radioastronomy.The Program Committee for GHz Symposium 2008 decided at its first meeting to test some new concepts. The Proceedings have been replaced by the Abstract bookyou now have in your hand. Furthermore, we have omitted the poster session and introduced shorter presentations and parallel workshops. Finally, we involved industry by letting distinguished company representatives lead the workshops with dedicated "hot" GHz themes.Chalmers is proud to announce that this probably is the largest GHz Symposium so far with almost 270 delegates at the time of this writing. Around half of the delegates are from industry representing around 50 companies. Almost 20% of the delegates come from outside Sweden. The aim of the Program Committee to create the GHz mixing zone between academia, research institutes, and companies seemsto have been fulfilled at GHz Symposium 2008.I would like to thank in particular the invited speakers, and all contributors, to make this GigaHertz Symposium 2008 happen. Many thanks to the Program Committee, industrial workshop moderators, Chairmen, and Chalmers employees for keeping this conference together.* I am particularly grateful to the GHz Task Force at MC2 for all practical assistance. Finally, I thank our exhibitors for their sponsoring; Take the time to meet them at the exhibition!I hope you enjoy GigaHertz Symposium 2008 in Göteborg!Jan GrahnGeneral ChairmanGigaHertz Symposium 2008
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| 29. |
- Grahn, Jan, 1962
(författare)
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Chalmers Center for High-Speed Technology - CHACH: Final Report 1995-2006
- 2007
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Rapport (övrigt vetenskapligt/konstnärligt)abstract
- Chalmers Center for High-Speed Technology (CHACH) was a Competence Center in high-speed electronics and photonics between Chalmers University of Technology, industrial partners and Swedish Governmental Agencies (Swedish National Board for Industrial and Technical Development (NUTEK) 1995-2000, Swedish Governmental Agency for Innovation Systems (VINNOVA) 2000-2005). CHACH was run 1995.04.01 - 2006.12.31 in six consecutive Stages, each one from 6 to 36 months in duration. For each Stage, a Consortium Agreement was signed between the partners defining the management, legal structure and a joint research program. CHACH's original mission was to conduct research for the long-term competitiveness of its partners. The research program encompassed fiberoptic communication, optoelectronics, high-frequency circuit design, emerging microwave devices, microwave power (devices), and electro-magnetic modeling. The mission was later changed to: "To bring academic advances in microwave-based components faster to industrial development and system prototyping by taking full advantage of the common infrastructure established by Chalmers and its industrial partners through CHACH."14 enterprises (six small- or medium-sized) and one industrial research institute joined as company members in CHACH. 173 persons (18 women) participated in research projects, steering boards and administration. Of these, 66 persons (8 women) were from Chalmers. Around 50% of the engaged researchers from industry partners was from Ericsson companies. In total, 239 MSEK (75 MSEK cash) was invested in the center by the partners in CHACH.The total academic output from CHACH was 174 journal papers and 290 conference contributions (37 invited). 22 Ph.D.s and 30 licentiates were examined at Chalmers. Eight of the Ph.D.s were later employed in industry. Eight success stories of industrial testing and transfer of results have been identified of which three had a commercial impact at company partners. It is expected that at least two to three of the other success stories will become commercially viable in coming years. A total of 47 patents were registered, almost all owned by Ericson. The number of spin off companies was three plus one in an advanced planning stage. Other CHACH research which turned out to have a long way to market has been transferred to verification projects or EU framework programs.CHACH was part of a large research environment at Department of Microtechnology and Nanoscience (MC2) at Chalmers. CHACH has during almost twelve years developed from a traditional center of excellence within engineering science to a Competence Center where company partners, academia and society benefit from impact. International evaluations by NUTEK/VINNOVA, an international advisory board, and support from university management have constituted essential factors in developing CHACH. Key issues have been to strongly increase industrial involvement including cash contributions from company partners, to profile the research program after industrial long-term needs, to clarify CHACH projects and results in relation to other activities at university, to settle the agreement and in particular solve IPR issues, and to clarify the added value of CHACH in relation to other research at Chalmers. This strategy helped Chalmers to transform CHACH into the second generation Competence Center, GigaHertz Centre, which was launched by Chalmers and industrial partners in January 2007 and is expected to operate at least until December 2016 within VINNOVA's VINN Excellence Program.
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| 30. |
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| 31. |
- Grahn, Jan, 1962, et al.
(författare)
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III-V HEMTs for cryogenic low noise amplifiers
- 2020
-
Ingår i: Technical Digest - International Electron Devices Meeting, IEDM. - 0163-1918. ; 2020-December, s. 25.6.1-25.6.4
-
Konferensbidrag (refereegranskat)abstract
- The InP HEMT is the preferred transistor technology for cryogenic low-noise amplification from 1 GHz up to 200 GHz. The InP HEMT shows its superiority at temperatures 5 to 15 K and technology development must be made with knowledge about the special circumstances occurring in III- V materials and device operating under cryogenic conditions. We report on how to electrically stabilize the cryogenic two-finger HEMT at low temperature making it possible to design low-noise amplifiers with state of the art noise performance up to mm-wave. We also demonstrate recent progress on optimizing the InP HEMT for cryogenic low-noise amplifier operation below 1 mW dc power dissipation, of interest for qubit readout electronics.
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| 32. |
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| 33. |
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| 34. |
- Harrysson Rodrigues, Isabel, 1993, et al.
(författare)
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Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers under a magnetic field
- 2019
-
Ingår i: IIS UTokyo SYMPOSIUM No.100.
-
Konferensbidrag (refereegranskat)abstract
- This work addresses the angular dependence of DC properties in 100nm InP HEMT devices under the influence of applied static magnetic field at 2 K. When kept at an angle 90o towards a magnetic field of 14 T, the maximum output drain current Ids was reduced more than 99 %. A rotation sweep of the transistor revealed a strong angular and B-field dependence on Ids. This was correlated with a reduction in dc transconductance and increase in on-resistance of the transistor. The RF properties of the transistor were tested by measuring an 0.3-14 GHz InP HEMT MMIC low-noise amplifier (LNA) at 2 K kept at an angle 90o towards a magnetic field up to 10 T. The gain and noise temperature were strongly decreased and increased, respectively, already below 1 T. The results show that precise alignment of the cryogenic InP HEMT LNA is crucial in a magnetic field. Even a slight mis-orientation of a few degrees leads to a strong degradation of the gain and noise temperature.
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| 35. |
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| 36. |
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| 37. |
- Harrysson Rodrigues, Isabel, 1993, et al.
(författare)
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On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field
- 2019
-
Ingår i: AIP Advances. - : AIP Publishing. - 2158-3226 .- 2158-3226. ; 9:8
-
Tidskriftsartikel (refereegranskat)abstract
- The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals. We have investigated the angular dependence of the InP HEMT when oriented in a magnetic field at 2 K ambient temperature up to 14 T. A sharp angular dependence as a function of the magnetic field was measured for the output current of the InP HEMT. This was accurately described by a geometrical magnetoresistance expression for all angles and magnetic field strengths. Key device parameters such as transconductance and on-resistance were significantly affected at small angles and magnetic fields. The strong angular dependence of the InP HEMT output current in a magnetic field has important implications for the alignment of cryogenic LNAs in microwave detection experiments involving magnetic fields. This work was performed in GigaHertz Centre in a joint research project between Chalmers University of Technology, Low Noise Factory AB, Wasa Millimeter Wave AB, Omnisys Instruments AB and RISE Research Institutes of Sweden. We are grateful to Serguei Cherednichenko for valuable assistance in the noise measurements and Niklas Wadefalk for the LNA design.
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| 38. |
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| 39. |
- L.Q.Zhang,, et al.
(författare)
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Fabrication of novel unipolar nanodiodes in InAs/AlSb for microwave detection
- 2011
-
Ingår i: Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on. - 2162-2027. - 9781457705083 ; :2-7 Oct. 2011, s. 1-2
-
Konferensbidrag (refereegranskat)abstract
- Abstract—We report on the fabrication of unipolar nanodiodes into an InAs/AlxGa1-xSb quantum-well heterostructure for room temperature microwave detection up to 110 GHz. Electron-beam lithography was combined with both dry- and wet-etching, and we explored the differences in the electric and detection parameters with the two methods.
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| 40. |
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| 41. |
- Lefebvre, Eric, 1975, et al.
(författare)
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Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation
- 2014
-
Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 1361-6641 .- 0268-1242. ; 29:3
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Tidskriftsartikel (refereegranskat)abstract
- The fabrication process of InAs/AlSb high electron mobility transistors (HEMTs) has been improved by depositing, after the shallow-mesa isolation of the active area, a thin SiNx-film on the exposed AlGaSb mesa floor. Devices with and without this early-protection against Al(Ga)Sb oxidation have been fabricated simultaneously on the same chip for fair comparison. Optical observations and electrical measurements over four and half years demonstrated the physical stability provided by this extra-coverage. The electrical measurements also revealed that the induced deposition of the probing pads and of the extrinsic part of the gates on SiNx slightly reduced the maximum drain current I-D (-9%) and the transconductance g(m) (-12%) to, respectively, 700 mA mm (1) and 1220 mS mm (1) for 2 x 20 mu m(2) InAs/AlSb HEMTs with a 140 nm recessed gate. On the other hand, the gate-leakage current I-G was lowered by more than one order of magnitude, leading to a better pinch-off behavior and increased values of cut-off frequency f(T) (+4%) and maximum frequency of oscillation f(max) (+36%) to, respectively, 230 GHz and 190 GHz at a drain voltage V-DS of 0.5 V.
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| 42. |
- Lefebvre, Eric, 1975, et al.
(författare)
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Gate-recess Technology for InAs/AlSb HEMTs
- 2009
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Ingår i: IEEE Transactions on Electron Devices. - 1557-9646 .- 0018-9383. ; 56:9, s. 1904-1911
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Tidskriftsartikel (refereegranskat)abstract
- The gate-recess technology for Si δ-doped InAs/AlSbhigh-electron-mobility transistors (HEMTs) has been investigated by combining atomic force microscopy (AFM) inspection of the gate-recess versus time with electrical device characterization. Deposition of the gate metal on the In0.5Al0.5As protection layer or on the underlying AlSb Schottky layer resulted in devices suffering from high gate-leakage current. Superior dc and high frequency device performance were obtained for HEMTs with an insulating layer between the gate and the Schottky layer resulting in a reduction of the gate leakage current IG by more than two orders of magnitude at a drain-to-source voltage VDS of 0.1 V. The existence of this intermediate insulating layer was evident from the electrical measurements. AFM measurements suggested that the insulating layer was due to a native oxidation of theAlSb Schottky layer. The insulated-gate HEMT with a gate length of 225 nm exhibited a maximum drain current ID higher than 500 mA/mm with good pinchoff characteristics, a dc transconductance gm of 1300 mS/mm, and extrinsic values for cutoff frequency fT and maximum frequency of oscillation fmax of 160 and 120 GHz, respectively.
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| 43. |
- Li, Junjie, 1995, et al.
(författare)
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Influence of Spacer Thickness on the Noise Performance in InP HEMTs for Cryogenic LNAs
- 2022
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 43:7, s. 1029-1032
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Tidskriftsartikel (refereegranskat)abstract
- InP high electron mobility transistors (InP HEMTs) with different spacer thickness 1 to 7 nm in the InAlAs-InGaAs heterostructure have been fabricated and characterized at 5 K with respect to electrical dc and rf properties. The InP HEMT noise performance was extracted from gain and noise measurements of a hybrid low-noise amplifier (LNA) at 5 K equipped with discrete transistors. When biased for optimal noise operation, the LNA using 5 nm spacer thickness InP HEMTs achieved the lowest average noise temperature of 1.4 K at 4-8 GHz. The InP HEMT channel noise was estimated from the drain noise temperature which confirmed the minimum in noise temperature for the 5 nm spacer thickness InP HEMT. It is suggested that the spacer thickness acts to control the degree of real-space transfer of electrons from the channel to the barrier responsible for the observed noise variation in the cryogenic InP HEMTs.
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| 44. |
- Li, Junjie, 1995, et al.
(författare)
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Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content
- 2024
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Ingår i: IEEE Journal of the Electron Devices Society. - 2168-6734. ; 12, s. 243-248
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Tidskriftsartikel (refereegranskat)abstract
- The InP high-electron-mobility transistor (HEMT) is employed in cryogenic low-noise amplifiers (LNAs) for the readout of faint microwave signals in quantum computing. The performance of such LNAs is ultimately limited by the properties of the active InxGa1-xAs channel in the InP HEMT. In this study, we have investigated the noise performance of 100-nm gate-length InP HEMTs used in cryogenic LNAs for amplification of qubits. The channel indium content in the InP HEMTs was 53, 60 and 70%. Hall measurements of the epitaxial materials and dc characterization of the InP HEMTs confirmed the superior transport properties of the channel structures. An indirect method involving an LNA and small-signal noise modeling was used for extracting the channel noise with high accuracy. Under noise-optimized bias, we observed that the 60% indium channel InP HEMT exhibited the lowest drain noise temperature. The difference in LNA noise temperature among InP HEMTs became more pronounced with decreasing drain voltage and current. An average noise temperature and average gain of 3.3 K and 21 dB, respectively, for a 4-8 GHz three-stage hybrid cryogenic LNA using 60% indium channel InP HEMTs was measured at a dc power consumption of 108 μW. To the best of the authors’ knowledge, this is a new state-of-the-art for a C-band LNA operating below 1 mW. The higher drain noise temperature observed for 53 and 70% indium channels InP HEMTs can be attributed to a combination of thermal noise in the channel and real-space transfer of electrons from the channel to the barrier. This report gives experimental evidence of an optimum channel indium content in the InP HEMT used in LNAs for qubit amplification.
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| 45. |
- Li, Junjie, 1995, et al.
(författare)
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On the relation between rf noise and subthreshold swing in InP HEMTs for cryogenic LNAs
- 2022
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Ingår i: Asia-Pacific Microwave Conference Proceedings, APMC. ; 2022-November, s. 10-12
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Konferensbidrag (refereegranskat)abstract
- 4 - 8 GHz low-noise amplifiers (LNAs) based on InP high electron mobility transistors (InP HEMTs) with different spacer thickness in the InAlAs-InGaAs heterostructure were fabricated and characterized at 5 K. A variation in the lowest average noise temperature of the LNA was observed with spacer thickness. We here report that the subthreshold swing (SS) at 5 K for the HEMT exhibited similar dependence with spacer thickness as the lowest average noise temperature of the LNA. This suggests that low-temperature characterization of SS for the HEMT can be used as a rapid assessment of anticipated noise performance in the cryogenic HEMT LNA.
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| 46. |
- Li, Junjie, 1995, et al.
(författare)
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Optimization of InGaAs Channel for Cryogenic InP HEMT Low-Noise Amplifiers
- 2023
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- The noise temperature was measured for InP HEMTs in cryogenic low-noise amplifiers (LNAs) with channel indium content varied from 53% to 70%. The Hall measurements for all the epitaxial structures and dc characteristics of InP HEMTs were characterized. The 4–8 GHz LNA with lattice-matched channel InP HEMTs has the highest noise temperature at 5 K. The LNAs with 60% and 70% channel exhibited similar noise of 1.4 K at the optimum noise bias at 5 K. The 60% channel InP HEMT showed the lowest drain noise temperature with 10.5 mW power consumption and the lowest LNA noise at low power with 3.3 K for 100 μW. The results indicate that there is an optimum indium channel composition for InP HEMTs in cryogenic LNAs.
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| 47. |
- Li, Junjie, 1995, et al.
(författare)
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Reduction of Noise Temperature in Cryogenic InP HEMT Low Noise Amplifiers with Increased Spacer Thickness in InAlAs-InGaAs-InP Heterostructures
- 2021
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- The impact of InP HEMT spacer thickness on cryogenic performance in low noise amplifiers (LNAs) has been investigated. 100 nm gate-length InP HEMTs based on InAlAs-InGaAs-InP heterostructures with different spacer thickness (1 nm, 3 nm and 5 nm) were fabricated. The Hall measurements, simulated band structures and dc characteristics of InP HEMTs were compared for all the three different epitaxial structures at 5 K. The noise performance of the InP HEMT was studied using a three-stage 4–8 GHz hybrid LNA at 5 K. All LNAs yielded an average gain above 30 dB across the whole band. When biased for optimal low noise operation, the LNA with 5 nm spacer thickness InP HEMTs achieved an average noise temperature of 1.3 K. The LNAs with spacer thickness of 1 nm and 3 nm InP HEMTs exhibited a higher average noise temperature of 1.9 K and 1.7 K, respectively. The reduction in LNA noise temperature with increased spacer thickness was observed to correlate with a strongly enhanced electron mobility in the InP HEMT structure at 5 K.
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| 48. |
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| 49. |
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| 50. |
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