| 1. |
- Gilet, Ph., et al.
(författare)
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1.3 μm VCSELs : InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells and InAs/GaAs quantum dots- Three candidates as active material
- 2007
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Ingår i: Vertical - Cavity Surface - Emitting Lasers XI. - San Jose, CA : SPIE. ; , s. F4840-F4840
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Konferensbidrag (refereegranskat)abstract
- In this article, we report our results on 1.3ÎŒm VCSELs for optical interconnection applications. Room temperature continuous-wave lasing operation is demonstrated for top emitting oxide-confined devices with three different active materials, highly strained InGaAs/GaAs(A) and GalnNAs/GaAs (B) multiple quantum wells (MQW) or InAs/GaAs (C) quantum dots (QD). Conventional epitaxial structures grown respectively by Metal Organic Vapour Phase Epitaxy (MOVPE), Molecular Beam Epitaxy (MBE) and MBE, contain rully doped GaAs/AlGaAs DBRs. All three epilayers are processed in the same way. Current and optical confinement are realized by selective wet oxidation. Circular apertures from 2 ÎŒm to 16 ÎŒm diameters are defined. At room temperature and in continuous wave operation, all three systems exhibit lasing operation at wavelengths above 1 275nm and reached 1 300nm for material (A). Typical threshold currents are in the range [1-10]mA and are strongly dependent firstly on oxide diameter and secondly on temperature. Room temperature cw maximum output power corresponds respectively to 1.77mW, 0.5mW and 0.6mW. By increasing driving current, multimode operation occurs at different level depending on the oxide diameter. In case (A), non conventional modal behaviors will be presented and explained by the presence of specific oxide modes. Thermal behaviors of the different devices have been compared. In case (A) and (C) we obtain a negative T0. We will conclude on the different active materials in terms of performances with respect to 1300nm VCSEL applications.
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| 2. |
- Moss, Brian D., et al.
(författare)
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Climate change and the future of freshwater biodiversity in Europe : a primer for policy-makers
- 2009
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Ingår i: Freshwater Reviews. - : Freshwater Biological Association. - 1755-084X. ; 2:2, s. 103-130
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Tidskriftsartikel (refereegranskat)abstract
- Earth's climate is changing, and by the end of the 21st century in Europe, average temperatures are likely to have risen by at least 2 °C, and more likely 4 °C with associated effects on patterns of precipitation and the frequency of extreme weather events. Attention among policy-makers is divided about how to minimise the change, how to mitigate its effects, how to maintain the natural resources on which societies depend and how to adapt human societies to the changes. Natural systems are still seen, through a long tradition of conservation management that is largely species-based, as amenable to adaptive management, and biodiversity, mostly perceived as the richness of plant and vertebrate communities, often forms a focus for planning. We argue that prediction of particular species changes will be possible only in a minority of cases but that prediction of trends in general structure and operation of four generic freshwater ecosystems (erosive rivers, depositional floodplain rivers, shallow lakes and deep lakes) in three broad zones of Europe (Mediterranean, Central and Arctic-Boreal) is practicable. Maintenance and rehabilitation of ecological structures and operations will inevitably and incidentally embrace restoration of appropriate levels of species biodiversity. Using expert judgement, based on an extensive literature, we have outlined, primarily for lay policy makers, the pristine features of these systems, their states under current human impacts, how these states are likely to alter with a warming of 2 °C to 4 °C and what might be done to mitigate this. We have avoided technical terms in the interests of communication, and although we have included full referencing as in academic papers, we have eliminated degrees of detail that could confuse broad policy-making
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| 3. |
- Pougeoise, E., et al.
(författare)
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Experimental study of the lasing modes of 1.3-ÎŒm highly strained InGaAs-GaAs quantum-well oxide-confined VCSELs
- 2009
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Ingår i: IEEE Photonics Technology Letters. - 1041-1135 .- 1941-0174. ; 21:6, s. 377-379
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Tidskriftsartikel (refereegranskat)abstract
- We present an experimental study of the main modes involved in the emission properties of InGaAs-GaAs quantum-well oxide-confined long wavelength vertical-cavity surface-emitting lasers. Lasing properties are dominated by the so-called "oxide modes" and by aperture modes, respectively, for small and large driving currents. We present complementary investigations of the laser emission including far-field angular distribution and spectroscopic near-field optical microscopy to a better understanding of the nature of the "oxide modes."
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| 4. |
- Silva, José P.B., et al.
(författare)
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Roadmap on ferroelectric hafnia- and zirconia-based materials and devices
- 2023
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Ingår i: APL Materials. - 2166-532X. ; 11:8
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Tidskriftsartikel (refereegranskat)abstract
- Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application. Besides their favorable intrinsic material properties, HfO2-ZrO2 materials face challenges regarding their endurance, retention, wake-up effect, and high switching voltages. In this Roadmap, we intend to combine the expertise of chemistry, physics, material, and device engineers from leading experts in the ferroelectrics research community to set the direction of travel for these binary ferroelectric oxides. Here, we present a comprehensive overview of the current state of the art and offer readers an informed perspective of where this field is heading, what challenges need to be addressed, and possible applications and prospects for further development.
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| 5. |
- Stevens, R., et al.
(författare)
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Microstructured photonic crystal for single-mode long wavelength VCSELs
- 2008
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Ingår i: Semiconductor Lasers and Laser Dynamics III. - : SPIE.
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Konferensbidrag (refereegranskat)abstract
- In this article, we report on long wavelength (1.27 ÎŒm) single-mode micro-structured photonic crystal strained InGaAs quantum wells VCSELs for optical interconnection applications. Single fundamental mode room-temperature continuous-wave lasing operation was demonstrated for devices designed and processed with different two-dimensional etched patterns. The conventional epitaxial structure was grown by Metal-Organic Vapor Phase Epitaxy (MOVPE) and contains fully doped GaAs/AlGaAs DBRs, one oxidation layer and three strained InGaAs quantum wells. The holes were etched half-way through the top-mirror following various designs (triangular and square lattices) and with varying hole's diameters and pitches. We obtained up to 1.7 mW optical output power and more than 30 dB Side-Mode Suppression Ratio (SMSR) at room temperature and in continuous wave operation. Systematic static electrical, optical and spectral characterization was performed on wafer using an automated probe station. Numerical modeling using the MIT Photonic-Bands (MPB [1]) package of the transverse modal behaviors in the photonic crystal was performed using the plane wave method in order to understand the index-guiding effects of the chosen patterns, and to further optimize the design structures for mode selection at the given wavelength.
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