| 1. |
- Singh, B., et al.
(författare)
-
Feasibility study for the measurement of pi N transition distribution amplitudes at (P)over-barANDA in (P)over-barp -> J/psi pi(0)
- 2017
-
Ingår i: Physical Review D. - : AMER PHYSICAL SOC. - 2470-0010 .- 2470-0029. ; 95:3
-
Tidskriftsartikel (refereegranskat)abstract
- The exclusive charmonium production process in (P) over barp annihilation with an associated pi 0 meson (p) over barp -> J/psi pi(0) is studied in the framework of QCD collinear factorization. The feasibility of measuring this reaction through the J/psi -> e(+) e(-) decay channel with the AntiProton ANnihilation at DArmstadt ((P) over bar ANDA) experiment is investigated. Simulations on signal reconstruction efficiency as well as the background rejection from various sources including the (P) over barp -> pi(+)pi(-)pi(0) and (p) over barp -> J/psi pi(0)pi(0) reactions are performed with PANDAROOT, the simulation and analysis software framework of the (P) over bar ANDA experiment. It is shown that the measurement can be done at (P) over bar ANDA with significant constraining power under the assumption of an integrated luminosity attainable in four to five months of data taking at the maximum design luminosity.
|
|
| 2. |
- Singh, B., et al.
(författare)
-
Study of doubly strange systems using stored antiprotons
- 2016
-
Ingår i: Nuclear Physics A. - : Elsevier. - 0375-9474 .- 1873-1554. ; 954, s. 323-340
-
Tidskriftsartikel (refereegranskat)abstract
- Bound nuclear systems with two units of strangeness are still poorly known despite their importance for many strong interaction phenomena. Stored antiprotons beams in the GeV range represent an unparalleled factory for various hyperon-antihyperon pairs. Their outstanding large production probability in antiproton collisions will open the floodgates for a series of new studies of systems which contain two or even more units of strangeness at the PANDA experiment at FAIR. For the first time, high resolution gamma-spectroscopy of doubly strange Lambda Lambda-hypernuclei will be performed, thus complementing measurements of ground state decays of Lambda Lambda-hypernuclei at J-PARC or possible decays of particle unstable hypernuclei in heavy ion reactions. High resolution spectroscopy of multistrange Xi(-) -atoms will be feasible and even the production of Omega(-) -atoms will be within reach. The latter might open the door to the vertical bar S vertical bar = 3 world in strangeness nuclear physics, by the study of the hadronic Omega(-) -nucleus interaction. For the first time it will be possible to study the behavior of Xi(+) in nuclear systems under well controlled conditions.
|
|
| 3. |
- Collaboration, The PANDA, et al.
(författare)
-
Feasibility studies of time-like proton electromagnetic form factors at PANDA at FAIR
- 2016
-
Ingår i: European Physical Journal A. - : Springer Publishing Company. - 1434-6001 .- 1434-601X. ; 52:10
-
Tidskriftsartikel (refereegranskat)abstract
- Simulation results for future measurements of electromagnetic proton form factors at P ¯ ANDA (FAIR) within the PandaRoot software framework are reported. The statistical precision with which the proton form factors can be determined is estimated. The signal channel p¯ p→ e+e- is studied on the basis of two different but consistent procedures. The suppression of the main background channel, i.e.p¯ p→ π+π-, is studied. Furthermore, the background versus signal efficiency, statistical and systematical uncertainties on the extracted proton form factors are evaluated using two different procedures. The results are consistent with those of a previous simulation study using an older, simplified framework. However, a slightly better precision is achieved in the PandaRoot study in a large range of momentum transfer, assuming the nominal beam conditions and detector performance.
|
|
| 4. |
- Cho, Choong-Rae, et al.
(författare)
-
Na0.5K0.5NbO3 thin films for voltage controlled acoustoelectric device applications
- 2002
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 80:17, s. 3171-3173
-
Tidskriftsartikel (refereegranskat)abstract
- Perovskite Na0.5K0.5NbO3 (NKN) thin films have been prepared on Y+36degrees cut single crystal quartz substrates using the pulsed laser ablation technique. X-ray diffraction theta-2theta and omega-scan data demonstrate almost perfectly c-axis oriented film textures with narrow mosaic broadening. Radio frequency dielectric spectroscopy showed that the films possess relatively high dielectric permittivities, low dielectric losses, and low frequency dispersions. Capacitance-voltage (C-V) measurements for a 2 mum slot NKN/quartz interdigital capacitor yield 23.1% tunability by applying 40 V bias at 1 MHz, while C-V hysteresis indicates polarization reversal. The considerable voltage tunability with superior crystallinity in piezoelectric NKN films on quartz substrates suggests their potential use for novel voltage tunable acoustoelectric devices.
|
|
| 5. |
- Grishin, Michael A., et al.
(författare)
-
High performance films of binary system SrTiO3-PbZr0.52Ti0.48O3 on sapphire
- 2001
-
Ingår i: Integrated Ferroelectrics. - : Informa UK Limited. - 1058-4587 .- 1607-8489. ; 39:1-4, s. 351-358
-
Tidskriftsartikel (refereegranskat)abstract
- Continuous series of solid solutions x.SrTiO3-(1-x).PbZr0.52Ti0.48O3 (SPZT) have been grown by pulsed laser deposition technique onto La0.7Sr0.3CoO3/Al2O3(01 (1) under bar2) single crystal. Films properties have been characterized in Au/SPZT/La0.7Sr0.3CoO3(LSCO)/Al2O3 vertical capacitive cell. X-ray diffraction shows SPZT/LSCO bilayer grows in strict epitaxial relationship with sapphire substrate: (001) SPZT parallel to (001) LSCO parallel to (01 (1) under bar2) Al2O3; [010] SPZT parallel to [010] LSCO parallel to [421] Al2O3. LSCO layer was found to be tensile strained, while SPZT film experiences tetragonal distortions c/a -1 approximate to 0.86% which are much lower than 2.73% in pure PZT ceramics. Curie temperature in SPZT film has been tailored continuously in the explored temperature range 77 K to 400 K by controlling SrTiO3:PZT ratio. Processing parameters have been optimized to get the highest tunability factor K = epsilon'(0) - epsilon'(V)/epsilon'(0) x 1/tandelta . SrTiO3:PZT=83:17 film exhibits superior properties: at I kHz maximum dielectric perinittivity and minimum loss tandelta were found to be 870 and 0.005, respectively; while K-factor exceeds value of 60 in the temperature range 280 to 350 degreesC reaching the maximum value of 64 at 325 degreesC. SPZT films can withstand prolonged pre-breakdown electric field and has resistivity as high as 3.5 10(12) Omega cm at 186 kV/cm.
|
|
| 6. |
- Khartsev, Sergiy, et al.
(författare)
-
Characterization of heteroepitaxial Na0.5K0.5NbO3/La0.5Sr0.5CoO3 electro-optical cell
- 2005
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 86:6, s. 062901-1-062901-3
-
Tidskriftsartikel (refereegranskat)abstract
- Heteroepitaxial Na0.5K0.5NbO3(1.5 mum)/La0.5Sr0.5CoO3(0.5 mum) (NKN/LSCO) films were grown on an Al2O3(0112) single crystal (r-cut sapphire) by rf-magnetron sputtering (NKN) and pulsed laser deposition (LSCO) techniques. Prism coupling waveguide refractometry has been employed to characterize vertical capacitive electro-optical cells with 2 X 8 mm(2) semitransparent Au top electrodes. Fitting reflectivity spectra to Fresnel formulas yields extraordinary and ordinary refractive indices n(e) = 2.232 and n(o) = 2.234 as well as electro-optic coefficient r(13) = 17.4 pm/V. Dispersion of the refraction index follows the Sellmeier formula n(2) = 1 + 3.46/[1-(244 nm/lambda)(2)] in the range from 400 nm to 850 nm.
|
|
| 7. |
- Khartsev, Sergiy, et al.
(författare)
-
Heteroepitaxial Na0.5K0.5NbO3/La0.5Sr0.5CoO3 electro-optical cell
- 2006
-
Ingår i: Integrated Ferroelectrics. - : Informa UK Limited. - 1058-4587 .- 1607-8489. ; 80, s. 133-143
-
Tidskriftsartikel (refereegranskat)abstract
- We report electro-optic performance of heteroepitaxial Na0.5K0.5NbO3(1.5 mu m)/La0.5Sr0.5CoO3 (0.5 mu m) (NKN/LSCO) films grown on Al2O3(01 (1) under bar2) single crystal (r-cut sapphire) by rf-magnetron sputtering (NKN) and pulsed laser deposition (LSCO) techniques. Vertical capacitive electro-optical cells were defined by a thermal evaporation of 2 x 8 mm(2) Au electrodes through the contact mask on top the NKN film. Processing parameters have been specially optimized to obtain electrosoftNKN films with a non-linear fatigue-free P-E characteristics: low remnant P-r = 7.7 mu C/cm(2) high induced polarization P = 23 mu C/cm(2) @ 400 km/cm , and the coercive field E-c = 70 kV/cm. Electro-optical characterization of NKN films has been performed using waveguide refractometry: a prism coupling of a light beam into the thin-film waveguide modes. Intensity of TM- and TE-polarized light of 655 nm laser diode reflected from the free surface of NKN film and Au-clad NKN/LSCO waveguide was recorded at zero and 15 V (100 kV/cm) bias electric field. Fitting reflectivity spectra to Fresnel formulas yields extraordinary and ordinary refractive indices n(c) = 2.232 and n(o) = 2.234 as well as electro-optic coefficient r(13) = 17.4 pm/V. Dispersion of the refraction index follows Sellmeier formula n(2) = 1+ 3.46/[1 + (244 nm/lambda)(2)] in the range from 400 nm to 850 nm.
|
|
| 8. |
- Khartsev, Sergiy, et al.
(författare)
-
Thin PZT film pressure microsensor
- 2001
-
Ingår i: Materials Research Society Symposium Proceedings. - 0272-9172 .- 1946-4274. ; 666, s. F8121-F8126
-
Tidskriftsartikel (refereegranskat)abstract
- We report on a ferroelectric film pressure sensor fabricated on the top of 4 mm long and 1.4 mm in diameter Pt80Ir20 (PtIr) rod-shaped tip. It consists of a PZT(0.5 μm)/LSMO(0.1 μm) film heterostructure, deposited by pulsed laser ablation of stoichiometric ceramic targets PbZr0.52Ti0.48O3 and La0.67Sr0.33MnO3, and a circular, ∅ = 1.2 mm, Au electrode on the top of the PZT film. The Au/PZT/LSMO/PtIr thin-film capacitor demonstrates good ferroelectric properties: dielectric constant of 762 and loss tanδ =0.008 @ 5 kHz, induced polarization as high as 32 μC/cm2 at electric field of 250 kV/cm. Piezoelectric test, performed in a hydrostatic pressure chamber, exhibits the piezoelectric constant to be as high as 67 pC/N. This is 20% higher than 56 pC/N shown by a polarized bulk PZT sensor fabricated from the ceramics used as the target in the pulsed laser deposition process. Such an increase of the piezoelectric constant we attribute to the preferential (001) orientation of the PZT film grown on the PtIr bulk substrate. The resolution of the thin PZT film pressure microsensor was found to be about 1 mbar.
|
|
| 9. |
|
|
| 10. |
|
|
| 11. |
- Grishin, Michael A., et al.
(författare)
-
Anisotropy of electron structure at InAs(111) surfaces by laser pump-and-probe photoemission spectroscopy
- 2005
-
Ingår i: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 574:1, s. 89-94
-
Tidskriftsartikel (refereegranskat)abstract
- The electronic structure and the electron dynamics of the clean InAs(111)A 2 x 2 and the InAs(111)B 1 x 1 surfaces have been studied by laser pump-and-probe photoemission spectroscopy. Normally unpopulated electron states above the valence band maximum (VBM) are filled on the InAs(111)A surface due to the conduction band pinning above the Fermi level (E-F). Accompanied by the downward band banding alignment, a charge accumulation layer is confined to the surface region creating a two dimensional electron gas (2DEG). The decay of the photoexcited carriers above the conduction band minimum (CBM) is originated by bulk states affected by the presence of the surface. No occupied states were found on the InAs(111)B 1 x 1 surface. This fact is suggested to be due to the surface stabilisation by the charge removal from the surface into the bulk. The weak photoemission intensity above the VBM on the (111)B surface is attributed to electron states trapped by surface defects. The fast decay of the photoexcited electron states on the (111)A and the (111)B surfaces was found to be tau(111A) less than or equal to 5 ps and tau(111B) less than or equal to 4ps, respectively. We suggest the diffusion of the hot electrons into the bulk is the decay mechanism. (
|
|
| 12. |
- Grishin, Michael A., et al.
(författare)
-
Electron structure and electron dynamics at InSb(111)2×2 semiconductor surface
- 2003
-
Ingår i: Applied Physics A. - : Springer Science and Business Media LLC. - 0947-8396 .- 1432-0630. ; 76:3, s. 299-302
-
Tidskriftsartikel (refereegranskat)abstract
- The conduction band electronic structure and the electron dynamics of the clean InSb(111)2 x 2 surface have been studied by laser based pump-and-probe photoemission. The results are compared to earlier studies of the InSb(110) surface. It is found that both the energy location and the time dependence of the photoexcited structures are very similar for the two surfaces. This indicates that the dominant part of the photoemission signal in the conduction band region is due to excitations of electrons in the bulk region and that the surface electronic states play a minor role. The fast decay of the excited state, tau similar to 12 ps, indicates that diffusion of hot electrons into the bulk is an important mechanism.
|
|
| 13. |
- Grishin, Michael A., 1973-
(författare)
-
Electronic materials : growth and characterisation
- 2005
-
Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- In this thesis the InSb(111), InAs(111) and GaSb(001) surfaces have been studied by means of time- and angle-resolved photoemission spectroscopy based upon the femtosecond laser system. The pump-and-probe technique allows to analyse both electron states in the valence band and normally unpopulated electron states above the valence band, which can be occupied by transiently excited carriers at the optically pumped surface. The life time of excited carriers is analysed by controlling over the time delay between pump and probe pulses. Experimental studies of the InSb(111) surface and comparison with a previously studied InSb(110) surface show electron excitations in the bulk region with a minor surface contribution. Time-resolved experiments of carrier dynamics at the polar InAs(111)A and InAs(111)B surfaces show about the same life time of excited carriers, while no populated states above the valence band maximum have been found at the InAs(111)A due to the charge removal. Surface intergap electron states have been found at the GaSb(001) surface located at ~250 meV above the valence band maximum. Angle-resolved experiments showed a strong confinement of this state at the centre of the surface Brillouin zone. A new two dimensional angle-resolved multi-anode analyser for the femtosecond laser photoemission setup has been constructed. The analyser can resolve a cone opening angle of ~1º at a drift distance of ~0.5 m with an energy resolution of ~125 meV. A continuous series of binary system SrTiO3–PbZr0.52Ti0.48O3 has been grown by pulsed laser deposition (PLD) on sapphire substrate with crystalline quality control by x-ray diffraction (XRD). The maximum tunability has been tailored to room temperature, where STO�PZT (71/29) composition shows superior performance. A PbZr0.52Ti0.48O3 thin film pressure sensor has been fabricated by PLD and characterised by XRD and electrical measurements. The piezoelectric constant was found to be ~20 % higher compared to the bulk ceramics. A ferroelectric thin film electro-optical cell Na0.5K0.5NbO3/La0.5Sr0.5CoO3 (NKN/LSCO) on sapphire has been fabricated by PLD. Refractive indices and electro-optical coefficient of the cell were characterised by prism coupling refractometry. The tunability of the PLD fabricated 2 μm slot NKN thin film interdigital capacitor has been found ~23 % at 40 V bias voltage and frequency 1 MHz.
|
|
| 14. |
- Månsson, Martin, et al.
(författare)
-
Electronic structure and electron dynamics at the GaSb(001) surface studied by femtosecond pump-and-probe pulsed laser photoemission spectroscopy
- 2006
-
Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 252:15, s. 5308-5311
-
Tidskriftsartikel (refereegranskat)abstract
- Transiently excited electron states at the GaSb(001) surface have been studied by means of time- and angle-resolved photoemission spectroscopy based on a femtosecond laser system. A normally unpopulated surface electron state has been found at similar to 250 meV above the valence band maximum with a strong confinement at the center of the surface Brillouin zone. The lifetime of transiently excited carriers at the intergap surface states has been found to be similar to 11 ps, associated with rapid carrier diffusion.
|
|
| 15. |
|
|
| 16. |
- Månsson, Martin, et al.
(författare)
-
Ultrafast electron dynamics and recombination at the Ge(111): Sn(root 3 X root 3)R30 degrees surface
- 2008
-
Ingår i: Surface Science Letters. - : Elsevier BV. - 0039-6028. ; 602:5, s. L33-L37
-
Tidskriftsartikel (refereegranskat)abstract
- We present the first study revealing the electronic structure and electron dynamics of the excited adatom state at the Ge(111): Sn(root 3 x root 3)R30 degrees surface. By the use of time- and angle-resolved photoemission spectroscopy, the normally unoccupied electronic structure of the partly empty Sn adatom can be probed. From the angle-resolved data we conclude that the adatom electrons at the Ge:Sn surface are more delocalized than at the clean Ge(111)c(2 x 8) surface. A unique pump-and-probe technique, based on a pulsed femtosecond laser-system, has also allowed us to study the recombination process of the excited state. We connect the recombination process of the excited electrons to the coherent fluctuations of the Sn adatoms. As a result we present an estimate for the time between each collective and coherent adatom flip Delta t = 9 ps, i.e. an adatom switching frequency nu(SW) approximate to 0.1 THz. We find that our results, contrary to scanning tunneling microscopy measurements [F. Ronci, S. Colonna, S.D. Thorpe, A. Cricenti, G. Le Lay, Phys. Rev. Lett. 95 (2005) 156101], agree very well with values extracted from molecular dynamics simulations found in the literature [J. Avila, A. Mascaraque, E.G. Michel, M.C. Asensio, G. Le Lay, J. Ortega, R. Perez, F. Flores, Phys. Rev. Lett. 82 (1999) 442; D. Farias, W. Kaminski, J. Lobo, J. Ortega, E. Hulpke, R. Perez, F. Flores, E.G. Michel, Phys. Rev. Lett. 91 (2003) 16103].
|
|
