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- Wisniewski, K., et al.
(författare)
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Overlapping stimulation of subthalamic nucleus and dentato-rubro-thalamic tract in Parkinson's disease after deep brain stimulation
- 2024
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Ingår i: Acta Neurochirurgica. - : Springer. - 0001-6268 .- 0942-0940. ; 166:1
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Tidskriftsartikel (refereegranskat)abstract
- BackgroundDeep brain stimulation (DBS) of the subthalamic nucleus (STN) reduces tremor, rigidity, and akinesia. According to the literature, the dentato-rubro-thalamic tract (DRTt) is verified target for DBS in essential tremor; however, its role in the treatment of Parkinson's disease is only vaguely described. The aim of our study was to identify the relationship between symptom alleviation in PD patients and the distance of the DBS electrode electric field (EF) to the DRTt.MethodsA single-center retrospective analysis of patients (N = 30) with idiopathic Parkinson's disease (PD) who underwent DBS between November 2018 and January 2020 was performed. DRTt and STN were visualized using diffusion-weighted imaging (DWI) and tractography protocol of magnetic resonance (MR). The EF was calculated and compared with STN and course of DRTt. Evaluation of patients before and after surgery was performed with use of UPDRS-III scale. The association between distance from EF to DRTt and clinical outcomes was examined. To confirm the anatomical variation between DRTt and STN observed in tractography, white matter dissection was performed with the Klingler technique on ten human brains.ResultsPatients with EF overlapping STN and DRTt benefited from significant motor symptoms improvement. Anatomical findings confirmed the presence of population differences in variability of the DRTt course and were consistent with the DRTt visualized by MR.ConclusionsDRTt proximity to STN, the main target in PD DBS surgery, confirmed by DWI with tractography protocol of MR combined with proper predefined stimulation parameters may improve efficacy of DBS-STN.
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- Ochalski, T.J., et al.
(författare)
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Optical study of AlGaN/GaN based HEMT structures
- 2005
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Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - 1610-1634 .- 1610-1642. ; 2, s. 2791-2794
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Tidskriftsartikel (refereegranskat)
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| 4. |
- Ochalski, TJ, et al.
(författare)
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Optical study of AlGaN/GaN based HEMT structures grown on sapphire and SiC
- 2005
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Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 202:7, s. 1300-1307
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Tidskriftsartikel (refereegranskat)abstract
- A detailed photoluminescence (PL), time-resolved photoluminescence (TRPL), and photoreflectance (PR) analysis of AlGaN/GaN heterostructures grown on different substrates: sapphire and silicon carbide (SiC) is presented in this paper. The properties of high electron mobility transistors (HEMTs) based on AlGaN/GaN structures are strongly dependent on the quality of the AlxGa1-xN top layer. We have examined a number of samples, grown on sapphire, in which the thicknesses of the Al0.3Ga0.7N layers vary from 18 to 75 nm. Room temperature PL under pulsed 266 nm excitation allowed for determination of the AI content in the examined thin AlGaN layers. Time-resolved PL measured at 1.6 K showed huge difference in the emission dynamics for different Al0.3Ga0.7N layer thicknesses. We observed an enormous increase of the emission decay time above the critical thickness of the AlGaN layer. PR spectra (associated with the GaN main layer) measured on AlGaN/GaN systems are discussed in terms of the thickness of the capping layer. The PR modulated by a high power 266 nm pulsed laser measured on a transistor structure exhibited an additional feature placed between signals related to the GaN and AlGaN layers, respectively. Such a transition is possible to monitor only for the structures of the best quality and is accordingly observable only on samples grown on SiC. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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