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- Sinno, Hiam, 1983-, et al.
(author)
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Amphiphilic semiconducting copolymer as compatibility layer for printing polyelectrolyte-gated OFETs
- 2013
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In: Organic electronics. - : Elsevier. - 1566-1199 .- 1878-5530. ; 14:3, s. 790-796
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Journal article (peer-reviewed)abstract
- We report a method for inkjet-printing an organic semiconductor layer on top of the electrolyte insulator layer in polyelectrolyte-gated OFETs by using a surface modification treatment to overcome the underlying wettability problem at this interface. The method includes depositing an amphiphilic diblock copolymer (P3HT-b-PDMAEMA). This material is designed to have one set of blocks that mimics the hydrophobic properties of the semiconductor (poly(3-hexylthiophene) or P3HT), while the other set of blocks include polar components that improve adhesion to the polyelectrolyte insulator. Contact angle measurements, atomic force microscopy, and X-ray photoelectron spectroscopy confirm formation of the desired surface modification film. Successful inkjet printing of a smooth semiconductor layer allows us to manufacture complete transistor structures that exhibit low-voltage operation in the range of 1 V.
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