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Sökning: WFRF:(Haberer Danny)

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1.
  • Liu, Xianjie, et al. (författare)
  • Tunable Interface Properties between Pentacene and Graphene on the SIC Substrate
  • 2013
  • Ingår i: The Journal of Physical Chemistry C. - : American Chemical Society. - 1932-7447 .- 1932-7455. ; 117:8, s. 3969-3975
  • Tidskriftsartikel (refereegranskat)abstract
    • Understanding energy-level alignment and molecular growth characteristics of an organic semiconductor on the graphene surface is crucial for graphene-related device performance. Here we demonstrate that tunable interface properties and molecular orientation can be achieved by modifying graphene films on a SiC substrate with monolayer copper-hexadecafluorophthalocyanine (F16CuPc) molecules. On clean graphene, pentacene molecules form a tilted configuration even at very low coverage (one or two monolayers) rather than flat-lying as on the graphite surface. Pentacene molecules prefer to grow with a (022) plane parallel to the clean graphene surface. With increasing coverage, X-ray adsorption data indicate there is no obvious change of molecular stacking orientation. The corresponding hole injection barrier is about 0.7 eV. On the modified graphene where thin (one or two monolayers) F16CuPc molecules are flat-lying on graphene, an almost perfect up-standing molecular stacking of pentacene film was formed on the modified surface. A low hole injection barrier of 0.3 eV was observed. Furthermore, the interface of dirty graphene upon pentacene was also discussed.
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2.
  • Senkovskiy, Boris V., et al. (författare)
  • Semiconductor-to-Metal Transition and Quasiparticle Renormalization in Doped Graphene Nanoribbons
  • 2017
  • Ingår i: Advanced Electronic Materials. - : Wiley. - 2199-160X. ; 3:4
  • Tidskriftsartikel (refereegranskat)abstract
    • A semiconductor-to-metal transition in N = 7 armchair graphene nanoribbons causes drastic changes in its electron and phonon system. By using angle-resolved photoemission spectroscopy of lithium-doped graphene nanoribbons, a quasiparticle band gap renormalization from 2.4 to 2.1 eV is observed. Reaching high doping levels (0.05 electrons per atom), it is found that the effective mass of the conduction band carriers increases to a value equal to the free electron mass. This giant increase in the effective mass by doping is a means to enhance the density of states at the Fermi level which can have palpable impact on the transport and optical properties. Electron doping also reduces the Raman intensity by one order of magnitude, and results in relatively small (4 cm−1) hardening of the G phonon and softening of the D phonon. This suggests the importance of both lattice expansion and dynamic effects. The present work highlights that doping of a semiconducting 1D system is strikingly different from its 2D or 3D counterparts and introduces doped graphene nanoribbons as a new tunable quantum material with high potential for basic research and applications.
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