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1.	Haglund, Erik, 1985, et al. (författare) 850 nm datacom VCSELs for higher-speed and longer-reach transmission 2013 Ingår i: European VCSEL Day 2013. Konferensbidrag (refereegranskat)abstract The 850 nm GaAs-based VCSEL is already the dominating technology for transmitters in optical interconnects up to 100 m in datacenters, thanks to low-cost fabrication, excellent high-speed properties at low currents and the existence of high-speed OM4 multimode fiber optimized for this particular wavelength. Future datacenters will require faster and more energy-efficient VCSELs to increase the overall bandwidth and reduce the power consumption of the datacenter network. In addition, longer-reach interconnects exceeding 1 km will also be required as datacenters grow into large multi-building complexes.By optimizing the doping profiles of the DBRs to reduce resistance, using a short (½-λ) cavity to improve longitudinal optical confinement and optimizing the photon lifetime for optimal damping, we obtained a record-high small-signal modulation bandwidth of 28 GHz for a ~4 µm oxide aperture VCSEL. A 7 µm oxide aperture VCSEL (~27 GHz bandwidth) enabled error-free transmission (bit-error-rate 300 m), the large spectral width of VCSELs leads to severe signal degradation by fiber dispersion. We have investigated two methods of fabricating low-spectral width quasi-single mode VCSELs to mitigate this problem. By using a small oxide aperture of ~3 µm, error-free transmission was achieved at 22 Gbit/s over 1.1 km of OM4 fiber. An alternative approach is to use an integrated mode filter in the form of a shallow surface relief to reduce the spectral width of the VCSEL. The mode filter allows for the use of a larger oxide aperture and thereby enables a lower resistance and operation at a lower current density. A 5 µm oxide aperture VCSEL with a mode filter enabled error-free transmission at 25 Gbit/s over 500 m of OM4 fiber.
2.	Haglund, Erik, 1985, et al. (författare) Quasi-single mode VCSELs for longer-reach multimode fiber optical interconnects 2014 Ingår i: Summers School on Optical Interconnects, 3-6 June 2014, Thessaloniki. Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract Longer-reach (>300 m) optical interconnects are needed asdatacenters grow ever larger. Today the reach of 850 nmVCSEL-based optical interconnects is mainly limited by fiber dispersion. By reducing the spectral width of the VCSEL, the effects of fiber dispersion may be reduced, effectively increasing the error-free transmission distance.
3.	Kumari, Sulakshna, et al. (författare) Integration of GaAs-based VCSEL array on SiN platform with HCG reflectors for WDM applications 2015 Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9781628414622 ; 9372, s. Art. no. 93720U- Konferensbidrag (refereegranskat)abstract We present a GaAs-based VCSEL structure, BCB bonded to a Si3N4 waveguide circuit, where one DBR is substituted by a free-standing Si3N4 high-contrast-grating (HCG) reflector realized in the Si3N4 waveguide layer. This design enables solutions for on-chip spectroscopic sensing, and the dense integration of 850-nm WDM data communication transmitters where individual channel wavelengths are set by varying the HCG parameters. RCWA shows that a 300nm-thick Si3N4 HCG with 800nm period and 40% duty cycle reflects strongly (
4.	Larsson, Anders, 1957, et al. (författare) VCSEL modulation capacity: Continued improvements or physical limits? 2017 Ingår i: 6th IEEE Photonics Society Optical Interconnects Conference, OI 2017. - 9781509050154 ; , s. 53-54 Konferensbidrag (refereegranskat)abstract The short-reach optical interconnects used in datacenters and high-performance computing systems are dominated by VCSEL and multimode fiber (MMF) links 1 . The VCSEL-MMF technology is the most cost and power efficient and offers the smallest footprint. VCSELs operating at 25-28 Gbit/s are in production 2 while research has extended the VCSEL modulation bandwidth to 30 GHz 3 (Fig.1) and enabled OOK-NRZ data transmission up to 57 Gbit/s at 25°C 4 and 50 Gbit/s at 85°C 5 , without equalization or forward-error-correction (FEC). A VCSEL energy dissipation below 100 fJ/bit has been demonstrated at 25-50 Gbit/s 3 (Fig.1). The need for higher interconnect capacity raises the question whether the speed and dynamics of VCSELs can be further improved or whether physical limits preventing this have been reached. Higher speed VCSELs would enable higher lane rates and therefore reduced number of lanes and increased bandwidth density for a given aggregate interconnect capacity.
5.	Haglund, Erik, 1985, et al. (författare) 30 GHz bandwidth 850 nm VCSEL with sub-100 fJ/bit energy dissipation at 25-50 Gbit/s 2015 Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 51:14, s. 1096-1097 Tidskriftsartikel (refereegranskat)abstract A high-speed and energy-efficient oxide-confined 850 nm vertical-cavity surface-emitting laser (VCSEL) for optical interconnects is presented. A record-high modulation bandwidth of 30 GHz is reached for a 3.5 mu m oxide aperture VCSEL, with 25 GHz bandwidth already at a bias current of 1.8 mA. The high bandwidth at low currents enables energy-efficient transmission with a dissipated heat energy in the VCSEL of
6.	Haglund, Erik, 1985, et al. (författare) High speed 850 nm VCSEL with 30 GHz modulation bandwidth 2015 Ingår i: Proceedings Conference on Lasers and Electro-Optics (CLEO) Europe. - 9781467374750 ; , s. CB-2.4 Konferensbidrag (refereegranskat)
7.	Haglund, Emanuel, 1988, et al. (författare) High-Speed 850-nm VCSELs Operating Error-Free Beyond 50 Gbit/s 2013 Ingår i: Optics and Photonics in Sweden, 22-23 Oct. 2013. Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract The 850-nm vertical-cavity surface-emitting laser (VCSEL) is a key component in today’s short reach (
8.	Haglund, Erik, 1985, et al. (författare) High-Speed VCSELs with Strong Confinement of Optical Fields and Carriers 2016 Ingår i: Journal of Lightwave Technology. - : Institute of Electrical and Electronics Engineers (IEEE). - 0733-8724 .- 1558-2213. ; 34:2, s. 269-277 Tidskriftsartikel (refereegranskat)abstract We present the design, fabrication, and performance of our latest generation high-speed oxide-confined 850-nm verticalcavity surface-emitting lasers. Excellent high-speed properties are obtained by strong confinement of optical fields and carriers. Highspeed modulation is facilitated by using the shortest possible cavity length of one half wavelength and placing oxide apertures close to the active region to efficiently confine charge carriers. The resulting strong current confinement boosts internal quantum efficiency, leading to low threshold currents, high wall-plug efficiency, and state-of-the-art high-speed properties at low bias currents. The temperature dependent static and dynamic performance is analyzed by current-power-voltage and small-signal modulation measurements.
9.	Haglund, Emanuel, 1988, et al. (författare) Hybrid vertical-cavity laser integration on silicon 2017 Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9781510606852 ; 10122, s. 101220H- Konferensbidrag (refereegranskat)abstract The hybrid vertical-cavity laser is a potential low current, high-efficiency, and small footprint light source for silicon photonics integration. As part of the development of such light sources we demonstrate hybrid-cavity VCSELs (HC-VCSELs) on silicon where a GaAs-based half-VCSEL is attached to a dielectric distributed Bragg reflector on silicon by adhesive bonding. HC-VCSELs at 850 nm with sub-mA threshold current, >2 mW output power, and 25 Gbit/s modulation speed are demonstrated. Integration of short-wavelength lasers will enable fully integrated photonic circuits on a silicon-nitride waveguide platform on silicon for applications in life science, bio-photonics, and short-reach optical interconnects.
10.	Haglund, Emanuel, 1988, et al. (författare) Impact of Bonding Interface Thickness on the Performance of Silicon-Integrated Hybrid-Cavity VCSELs 2016 Ingår i: Conference Digest - IEEE International Semiconductor Laser Conference. - 0899-9406. - 9784885523069 ; , s. Article no 7765752- Konferensbidrag (refereegranskat)abstract The dependence of the performance of short-wavelength silicon-integrated hybrid-cavity VCSELs on the thickness of the bonding interface used for the heterogeneous integration has been studied. Performance measures investigated include the emission wavelength, thermal impedance, and variation of threshold current and output power with temperature.
11.	Haglund, Emanuel, 1988, et al. (författare) Silicon-Integrated Hybrid-Cavity 850-nm VCSELs by Adhesive Bonding: Impact of Bonding Interface Thickness on Laser Performance 2017 Ingår i: IEEE Journal of Selected Topics in Quantum Electronics. - 1558-4542 .- 1077-260X. ; 23:6, s. 1700109- Tidskriftsartikel (refereegranskat)abstract The impact of bonding interface thickness on the performance of 850-nm silicon-integrated hybrid-cavity vertical-cavity surface-emitting lasers (HC-VCSELs) is investigated. The HC-VCSEL is constructed by attaching a III–V “half-VCSEL” to a dielectric distributed Bragg reflector on a Si substrate using ultrathin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding. The thickness of the bonding interface, defined by the DVS-BCB layer together with a thin SiO2 layer on the “half-VCSEL,” can be used to tailor the performance, for e.g., maximum output power or modulation speed at a certain temperature, or temperature-stable performance. Here, we demonstrate an optical output power of 2.3 and 0.9 mW, a modulation bandwidth of 10.0 and 6.4 GHz, and error-free data transmission up to 25 and 10 Gb/s at an ambient temperature of 25 and 85 °C, respectively. The thermal impedance is found to be unaffected by the bonding interface thickness.
12.	Haglund, Emanuel, 1988, et al. (författare) Silicon-integrated short-wavelength VCSELs 2017 Ingår i: Proc. European Semiconductor Laser Workshop. ; , s. C21- Konferensbidrag (refereegranskat)abstract GaAs-based hybrid-cavity VCSELs integrated onto silicon by ultra-thin DVS-BCB adhesive bonding are presented. The hybrid-cavity implies that the optical field extends over both the GaAs- and the Si-based parts, which could allow a fraction of the light in the vertical-cavity to be coupled into an in-plane waveguide. Surface-emitting devices are demonstrated at ~860 nm with up to 2.3 mW optical output power and 12 GHz modulation bandwidth, providing error-free large signal data transmission up to 25 Gb/s.
13.	Larsson, Anders, 1957, et al. (författare) 1060 nm VCSELs for long-reach optical interconnects 2018 Ingår i: Optical Fiber Technology. - : Elsevier BV. - 1095-9912 .- 1068-5200. ; 44, s. 36-42 Tidskriftsartikel (refereegranskat)abstract Reach extension of high capacity optical interconnects based on vertical-cavity surface-emitting lasers (VCSELs) and multimode fibers (MMFs), as needed for large-scale data centers, would benefit from high-speed GaAs-based VCSELs at 1060 nm. At this wavelength, the chromatic dispersion and attenuation of the optical fiber are much reduced in comparison with 850 nm. We present single and multimode 1060 nm VCSELs based on designs derived partly from our high-speed 850 nm VCSEL designs. The single-mode VCSEL, with a modulation bandwidth exceeding 22 GHz, supports back-to-back data rates up to 50 Gbps at 25 °C and 40 Gbps at 85 °C under binary NRZ (OOK) modulation. Using mode-selective launch, we demonstrate error-free 25 Gbps transmission over 1000 m of 1060 nm optimized MMF. Higher data rates and/or longer distances will be possible with equalization, forward-error-correction, and/or multilevel modulation.
14.	Larsson, Anders, 1957, et al. (författare) High Speed VCSELs and VCSEL Arrays for Single and Multicore Fiber Interconnects 2015 Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9781628414714 ; 9381, s. Art. no. 93810D- Konferensbidrag (refereegranskat)abstract Our recent work on high speed 850 nm VCSELs and VCSEL arrays is reviewed. With a modulation bandwidth approaching 30 GHz, our VCSELs have enabled transmitters and links operating at data rates in excess of 70 Gbps (at IBM) and transmission over onboard polymer waveguides at 40 Gbps ( at University of Cambridge). VCSELs with an integrated mode filter for single mode emission have enabled transmission at 25 Gbps over > 1 km of multimode fiber and a speed-distance product of 40 Gbps . km. Dense VCSEL arrays for multicore fiber interconnects have demonstrated 240 Gbps aggregate capacity with excellent uniformity and low crosstalk between the 40 Gbps channels.
15.	Larsson, Anders, 1957, et al. (författare) High-Speed VCSELs for Datacom 2016 Ingår i: Proceedings European Conference on Optical Communication. - 9783800742745 ; , s. 977-979 Konferensbidrag (refereegranskat)
16.	Larsson, Anders, 1957, et al. (författare) High-Speed VCSELs for OOK and Multilevel PAM Modulation 2017 Ingår i: 30TH ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC). - 2374-0140. - 9781509065783 ; , s. 355-356 Konferensbidrag (refereegranskat)abstract The short-reach optical interconnects used in datacenters and high-performance computing systems are dominated by vertical-cavity surface-emitting laser (VCSEL) and multimode fiber (MMF) links1. The VCSEL-MMF technology is the most cost and power efficient and offers the smallest footprint. VCSELs for 25-28 Gbit/s OOK lanes are in production2 while 25-28 Gbaud PAM-4 with forward-error-correction (FEC) is considered for next generation 50-56 Gbit/s lanes3. For this transition, as well as future developments towards even higher speed, the VCSEL dynamics and high-speed properties are of utmost importance. Improved dynamics may enable 50-56 Gbit/s PAM-4 without FEC and even 50-56 Gbit/s OOK, which would reduce complexity, power consumption, and latency.
17.	Larsson, Anders, 1957, et al. (författare) VCSEL design and integration for high-capacity optical interconnects 2017 Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9781510606593 ; 10109, s. 101090M- Konferensbidrag (refereegranskat)abstract Vertical-cavity surface-emitting lasers and multi-mode fibers is the dominating technology for short-reach optical interconnects in datacenters and high performance computing systems at current serial rates of up to 25-28 Gbit/s. This is likely to continue at 50-56 Gbit/s. The technology shows potential for 100 Gbit/s.
18.	Larsson, Anders, 1957, et al. (författare) VCSEL modulation speed: Status and prospects 2019 Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. ; 10938 Konferensbidrag (refereegranskat)
19.	Roelkens, Gunther, et al. (författare) 850 nm hybrid vertical cavity laser integration for on-chip silicon photonics light sources 2017 Ingår i: Optical Fiber Communication Conference (OFC), 19-23 March 2017. - 9781943580231 ; , s. W3E.6- Konferensbidrag (refereegranskat)abstract The realization of 850 nm hybrid III-V/dielectric VCSELs is reported in order to realize low power consumption integrated light sources for SiN waveguide circuits, which find applications both in short-reach optical communication and optical sensors.
20.	Simpanen, Ewa, 1987, et al. (författare) 1060 nm single and multimode VCSELs for up to 50 Gb/s modulation 2017 Ingår i: Proceedings of IEEE Photonics Conference 2017. - : IEEE. - 9781509065776 ; , s. 65-66 Konferensbidrag (refereegranskat)abstract We present the design and performance of 1060 nm VCSELs with up to 50 Gb/s intrinsic speed and demonstrate 25 Gb/s transmission over 1000 m of 1060 nm optimized MMF using a single-mode VCSEL and mode-selective launch.
21.	Simpanen, Ewa, 1987, et al. (författare) 1060 nm single-mode vertical-cavity surface-emitting laser operating at 50 Gbit/s data rate 2017 Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 53:13, s. 869-870 Tidskriftsartikel (refereegranskat)abstract An energy efficient 1060 nm GaAs-based oxide-confined vertical-cavity surface-emitting laser designed for high-speed modulation and singlemode emission has been developed. A record data rate of 50 Gbit/ s at an energy dissipation of 100 fJ/ bit is demonstrated for a device with > 50 dB side-mode-suppression and 0.2 mA threshold current, making this laser a promising light source for long-reach optical interconnects.
22.	Simpanen, Ewa, 1987, et al. (författare) 1060 nm VCSEL for up to 40 Gbit/s Data Transmission 2016 Ingår i: Conference Digest - IEEE International Semiconductor Laser Conference. - 0899-9406. - 9784885523069 ; , s. Article no 7765757- Konferensbidrag (refereegranskat)abstract A GaAs-based 1060 nm VCSEL with strained InGaAs/GaAsP QWs, doped DBRs, a short optical cavity, and multiple oxide apertures is presented. Modulation up to 40 Gbit/s at 25°C and 30 Gbit/s at 85°C is demonstrated.
23.	Westbergh, Petter, 1981, et al. (författare) High-speed 850 nm VCSELs operating error free up to 57 Gbit/s 2013 Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 49:16, s. 1021-1023 Tidskriftsartikel (refereegranskat)abstract Error-free transmission is demonstrated at bit rates up to 57 Gbit/s back-to-back, up to 55 Gbit/s over 50 m fibre and up to 43 Gbit/s over 100 m fibre using an oxide-confined 850 nm high-speed vertical cavity surface-emitting laser with a photon lifetime optimised for high-speed data transmission.
24.	Gustavsson, Johan, 1974, et al. (författare) Silicon integrated 850-nm hybrid vertical-cavity laser for life science applications 2017 Ingår i: VCSEL Day 2017. Konferensbidrag (refereegranskat)abstract The integration of efficient laser sources on silicon would enable fully integrated silicon photonic circuits with a high degree of functionality and performance complexity for many applications [1]. Different integration concepts have therefore been suggested, where one such technique is the heterogeneous integration of a vertical-cavity laser (VCL), referred to as a hybrid VCL. It is promising as it has potential to offer low drive currents, high modulation bandwidths, and small footprint [2-4]. In-plane emission with waveguide-coupling can be achieved by an intra-cavity waveguide embossed with a weak diffraction grating, as an example [5]. Integration of such short-wavelength laser sources on a silicon-nitride (SiN) waveguide platform on silicon may enable fully integrated silicon photonic circuits for applications not only in short-reach optical interconnects but also in life science and bio-photonics. As a first step in realizing short-wavelength hybrid VCLs with in-plane emission coupled to a SiN waveguide, we have developed a technique to produce high performance 850-nm hybrid VCLs with out-of-plane emission. It is based on adhesive bonding of epitaxial AlGaAs-material onto a dielectric distributed Bragg reflector (DBR) on silicon [6-8]. We have fabricated devices with surface emission having sub-mA threshold current, >2 mW output power, and 25 Gbit/s modulation speed [8]. To be able to demonstrate in-plane emission with SiN waveguide coupling from our hybrid 850-nm VCLs, our next step is to add a SiN waveguide structure with embossed grating on top of the dielectric DBR, before adhesively bonding the AlGaAs-material. So far, based on numerical simulations, we have designed a device that is predicted to yield a slope efficiency of ~0.3 W/A at 25 °C for the light coupled to a single-mode waveguide, while maintaining a sub-mA threshold current for the lasing [9]. This work is supported by the European Union’s Horizon 2020 research and innovation program under grant agreement no. 688519 (PIX4life), the Swedish Foundation for Strategic Research (SSF), and the European FP7-ERC-InSpectra Advanced Grant. References [1] Z. Zhou et al., Light Sci. Appl., vol. 4, no. 11, p. e358, 2015. [2] Y. Tsunemi et al., Opt. Express, vol. 21, no. 23, p. 28685, 2013. [3] J. Ferrara et al., Opt. Express, vol. 23, no. 3, p. 2512, 2015. [4] G.C. Park et al., Laser Photon. Rev., vol. 9, no. 3, p. L11, 2015. [5] D. A. Louderback et al., Electron. Lett., vol. 40, no. 17, p. 1064, 2004. [6] E.P. Haglund et al., Opt. Express, vol. 23, no. 26, p. 33634, 2015. [7] E.P. Haglund et al., IEEE Photon. Technol. Lett., vol. 28, no. 8, p. 856, 2016. [8] E.P. Haglund et al., IEEE J. Sel. Top. Quantum Electron., vol. 23, no. 6, p. 1700109, 2017. [9] S. Kumari et al., Submitted to IEEE Photon. J.,2017.
25.	Gustavsson, Johan, 1974, et al. (författare) Silicon-Integrated Hybrid-Vertical-Cavity Lasers for Life Science Applications 2017 Ingår i: 2017 IEEE Photonics Conference. - 9781509065783 Konferensbidrag (refereegranskat)abstract Hybrid 850-nm-wavelength vertical-cavity lasers formed by adhesively bonding AlGaAs-material to a dielectric distributed Bragg reflector on Silicon has experimentally enabled sub-mA threshold current and 25 Gb/s modulation speed. Numerical calculations estimate >0.3 mW/mA slope efficiency for in-plane SiN waveguide coupled light using an intra-cavity grating.
26.	Haglund, Emanuel, 1988, et al. (författare) 20-Gb/s Modulation of Silicon-Integrated Short-Wavelength Hybrid-Cavity VCSELs 2016 Ingår i: IEEE Photonics Technology Letters. - 1041-1135 .- 1941-0174. ; 28:8, s. 856 - 859 Tidskriftsartikel (refereegranskat)abstract We investigate the dynamics of silicon-integrated 850-nm-wavelength hybrid-cavity vertical-cavity surface-emitting lasers (VCSELs). The VCSELs consist of a GaAs-based half-VCSEL attached to a dielectric distributed Bragg reflector on a silicon substrate using ultra-thin divinylsiloxane-bis-benzocyclobutene adhesive bonding. A 5-µm oxide aperture diameter VCSEL, with a small signal modulation bandwidth of 11 GHz, supports data transmission at bit rates up to 20 Gb/s. The modulation bandwidth and the large signal modulation characteristics are found to be impaired by the high thermal impedance.
27.	Haglund, Emanuel, 1988, et al. (författare) Dynamic properties of silicon-integrated short-wavelength hybrid-cavity VCSEL 2016 Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9781510600010 ; 9766 Konferensbidrag (refereegranskat)abstract We present a vertical-cavity surface-emitting laser (VCSEL) where a GaAs-based “half-VCSEL” is attached to a dielectric distributed Bragg reflector on silicon using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, creating a hybrid cavity where the optical field extends over both the GaAs- and the Si-based parts of the cavity. A VCSEL with an oxide aperture diameter of 5 μm and a threshold current of 0.4 mA provides 0.6 mW output power at 845 nm. The VCSEL exhibits a modulation bandwidth of 11 GHz and can transmit data up to 20 Gbps.
28.	Haglund, Emanuel, 1988, et al. (författare) Impact of Damping on High-Speed Large Signal VCSEL Dynamics 2015 Ingår i: Journal of Lightwave Technology. - 0733-8724 .- 1558-2213. ; 33:4, s. 795 - 801 Tidskriftsartikel (refereegranskat)abstract An investigation of the optimal relaxation oscillation damping for high-speed 850-nm vertical-cavity surface-emitting laser (VCSEL) under large signal operation is presented, using devices with K-factors ranging from 0.1 to 0.4 ns. Time-domain measurements of turn-on transients are used to quantify damping dependent rise times, overshoots, and signal amplitudes. Optical eye diagrams together with timing jitter and bit error rate measurements reveal a tradeoff between the rise time and the duration of the relaxation oscillations. To produce a high-quality eye at a specific data rate, a proper amount of damping is needed to simultaneously obtain sufficiently high bandwidth and low timing jitter. We found that for error-free transmission, a VCSEL with a 0.3 ns K-factor achieved the best receiver sensitivity at 10 and 25 Gb/s, whereas a less damped VCSEL with a 0.2 ns K-factor achieved the best sensitivity at 40 Gb/s.
29.	Haglund, Emanuel, 1988, et al. (författare) Impact of Damping on Large Signal VCSEL Dynamics 2014 Ingår i: Conference Digest - IEEE International Semiconductor Laser Conference. - 0899-9406. - 9781479957217 ; , s. 78-79 Konferensbidrag (refereegranskat)abstract The dependence of large signal VCSEL dynamics on damping is studied through time-domain measurements of turn-on transients and timing jitter for VCSELs having K-factors from 0.1 to 0.4 ns.
30.	Haglund, Emanuel, 1988, et al. (författare) Optimum Damping Level for High-Speed Large Signal VCSEL modulation 2014 Ingår i: Optics and Photonics in Sweden, 11-12 Nov. 2014. Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract The commercial optical interconnects used in datacenters and high performance computers have recently been pushed to data rates of 25-28 Gbps. Near future standards will require even higher data rates and further work to increase the speed is therefore necessary. Typically the 850 nm vertical-cavity surface-emitting laser (VCSEL) is employed as light source in such optical interconnects, due to its low-cost fabrication and excellent high-speed properties at low drive currents.Previously, we have shown that a reduction of the damping of the VCSEL small signal modulation response can increase the modulation bandwidth (BW) and that there exists an optimum damping for maximum BW. This allowed us to demonstrate a record-high small signal modulation BW of 28 GHz and error-free [bit error rate (BER)
31.	Haglund, Emanuel, 1988, et al. (författare) Silicon-Integrated 850-nm Hybrid-Cavity VCSEL 2015 Ingår i: Optics and Photonics in Sweden, 28-29 Oct. 2015. Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract Silicon photonics is a promising energy-efficient and cost-effective platform for optical integrated circuits. However, due to its indirect bandgap silicon cannot be used to produce effective light sources. An attractive solution to this is heterogeneous integration of the GaAs-based vertical-cavity surface-emitting laser (VCSEL) on silicon. The GaAs-based VCSEL has proven to be both high-speed and energy efficient, with data rates above 70 Gb/s and less than 100 fJ/bit dissipated power up to 50 Gb/s.By employing ultra-thin divinylsiloxane-is-benzocyclobutene (DVS-BCB) adhesive bonding a GaAs-based “half-VCSEL” with a gain region and a top distributed Bragg Reflector (DBR) has been attached to a dielectric DBR on silicon. This creates a hybrid cavity where the standing-wave optical field is extending into both the silicon and GaAs-based parts of the cavity.The hybrid-cavity may eventually enable light to be tapped off to an in-plane waveguide, e.g. using a high contrast grating (HCG) instead of the bottom DBR. Replacing the whole bottom DBR with an HCG also gives the possibility to set the wavelength according to the grating parameters, enabling fabrication of multi-wavelength VCSEL arrays that together with integrated wavelength multiplexers could form 850-nm wavelength division multiplexed (WDM) transmitters.A 9 µm oxide aperture diameter VCSEL has a threshold current of 1.2 mA and a maximum output power of 1.6 mW at ~845 nm. The performance is currently limited by the too small gain-to-resonance detuning and the high thermal impedance.
32.	Haglund, Emanuel, 1988, et al. (författare) Silicon-integrated short-wavelength hybrid-cavity VCSEL 2015 Ingår i: Optics Express. - 1094-4087 .- 1094-4087. ; 23:26, s. 33634-33640 Tidskriftsartikel (refereegranskat)abstract We demonstrate a short-wavelength hybrid-cavity vertical-cavity surface-emitting laser (VCSEL) heterogeneously integrated on silicon. A GaAs-based “half-VCSEL” has been attached to a dielectric distributed Bragg reflector (DBR) on a silicon wafer using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, thereby creating a cavity with the standing-wave optical field extending over the silicon- and GaAs-based parts of the cavity. A 9 µm oxide aperture diameter VCSEL with a threshold current of 1.2 mA produces 1.6 mW optical output power at 6.0 mA bias current with a wavelength of ~845 nm.
33.	Haglund, Emanuel, 1988 (författare) VCSEL Cavity Engineering for High Speed Modulation and Silicon Photonics Integration 2018 Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract The GaAs-based vertical-cavity surface-emitting laser (VCSEL) is the standard light source in today's optical interconnects, due to its energy efficiency, low cost, and high speed already at low drive currents. The latest commercial VCSELs operate at data rates of up to 28 Gb/s, but it is expected that higher speeds will be required in the near future. One important parameter for the speed is the damping of the relaxation oscillations. A higher damping is affordable at low data rates to reduce signal degradation due to overshoot and jitter, while lower damping is required to reach higher data rates. A VCSEL with the damping optimized for high data rates enabled error-free transmission at record-high data rates up to 57 Gb/s. For future interconnect links it is of interest with tighter integration between the optics and the silicon-based electronics. Techniques to heterogeneously integrate GaAs-based VCSELs on silicon could potentially enable integrated multi-wavelength VCSEL arrays, thus increasing the data rate through wavelength division multiplexing. Heterogeneous integration of GaAs-based VCSELs would also benefit applications that need short-wavelength light sources, such as photonic integrated circuits for life sciences and bio photonics. Silicon-integrated short-wavelength hybrid-cavity VCSELs with up to 2.3 mW optical output power and 12 GHz modulation bandwidth, which enables data transmission at up to 25 Gb/s, are demonstrated by employing ultra-thin adhesive bonding. Further, a vertical-cavity silicon-integrated laser (VCSIL) with in-plane waveguide emission is demonstrated by employing an intra-cavity waveguide with a weak diffraction grating that couples light from the standing wave in the vertical cavity into an in-plane waveguide.
34.	Haglund, Emanuel, 1988 (författare) Vertical-Cavity Surface-Emitting Lasers: Large Signal Dynamics and Silicon Photonics Integration 2016 Licentiatavhandling (övrigt vetenskapligt/konstnärligt)abstract The GaAs-based vertical-cavity surface-emitting laser (VCSEL) is the standard light source in today's optical interconnects, due to its energy efficiency, low cost, and high speed already at low drive currents. The latest commercial VCSELs operate at data rates of up to 28 Gb/s, but it is expected that higher speeds will be required in the near future.One important parameter for the speed is the damping of the relaxation oscillations. A higher damping is affordable at low data rates to reduce signal degradation due to overshoot and jitter, while lower damping is required to reach higher data rates. A VCSEL with the damping optimized for high data rates enabled error-free transmission at record-high data rates of 57 Gb/s over 1 m optical fiber, 55 Gb/s over 50 m optical fiber, and 43 Gb/s over 100 m optical fiber.For future interconnect links it is of interest with tighter integration between the optics and the silicon-based electronics. Employing heterogeneous integration techniques to integrate GaAs-based VCSELs on silicon could potentially enable integrated multi-wavelength VCSEL arrays, thus increasing the data rate through parallelization. Heterogeneous integration of GaAs-based VCSELs would also benefit applications that need short-wavelength light sources, such as photonic integrated circuits for life sciences and biophotonics. By employing ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) bonding we have demonstrated silicon-integrated short-wavelength hybrid-cavity VCSELs with up to 1.6 mW optical output power, with modulation bandwidth of 11 GHz and capable of data transmission at data rates up to 20 Gb/s.
35.	Kumari, Sulakshna, et al. (författare) Design of an 845-nm GaAs Vertical-Cavity Silicon-Integrated Laser with an Intracavity Grating for Coupling to a SiN Waveguide Circuit 2017 Ingår i: IEEE Photonics Journal. - 1943-0655. ; 9:4, s. 1504109- Tidskriftsartikel (refereegranskat)abstract A short-wavelength hybrid GaAs vertical-cavity silicon-integrated laser (VCSIL) with in-plane waveguide coupling has been designed and optimized using numerical simulations. A shallow etched silicon nitride (SiN) grating is placed inside the cavity of the hybrid vertical-cavity silicon-integrated laser to both set the polarization state of the resonant optical field and to enable output coupling to a SiN waveguide with high efficiency. The numerical simulations predict that for apertures of 4 and 6-μm oxide-confined VCSILs operating at 845-nm wavelength, a slope efficiency for the light coupled to the waveguide of 0.18 and 0.22 mW/mA is achievable, respectively, while maintaining a low threshold gain of 583 and 589 cm−1, respectively, for the lasing.
36.	Kumari, Sulakshna, et al. (författare) Vertical-Cavity Silicon-Integrated Laser with In-Plane Waveguide Emission at 850 nm 2018 Ingår i: Laser and Photonics Reviews. - : Wiley. - 1863-8899 .- 1863-8880. ; 12:2, s. 1700206- Tidskriftsartikel (refereegranskat)abstract A continuous-wave electrically-pumped short-wavelength hybrid vertical-cavity silicon-integrated laser (VCSIL) with in-plane emission into a silicon nitride (SiN) waveguide is experimentally demonstrated. The coupling from the vertical cavity into the in-plane SiN waveguide is achieved by a weak grating on the SiN waveguide placed inside the cavity. The grating provides coupling, sets the polarization of the lasing output, and provides transverse mode control. A 5 mu m oxide-aperture diameter device with a threshold current of 1.1 mA produces 73 mu W single-sided waveguide-coupled optical output power at 2.6 mA bias current at a wavelength of 856 nm and a side-mode suppression ratio (SMSR) of 29 dB.
37.	Larsson, Anders, 1957, et al. (författare) Empowering silicon with vertical-cavity lasers 2017 Ingår i: Compound Semiconductor. - 1096-598X. ; 23:5, s. 40-45 Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract Bringing the advantages of the VCSEL to silicon photonics with vertical-cavity lasers.
38.	Lengyel, Tamas, 1986, et al. (författare) Impact of Damping on 50 Gbps 4-PAM Modulation of 25G Class VCSELs 2017 Ingår i: Optics InfoBase Conference Papers. - 2162-2701. - 9781943580231 ; , s. paper W3G.2- Konferensbidrag (refereegranskat)abstract We investigate the effects of photon lifetime and damping of the modulation response on the quality of 50 Gbps 4-PAM signal generation with directly modulated 25G class VCSELs and identify the appropriate values for the K-factor.
39.	Lengyel, Tamas, 1986, et al. (författare) Impact of Damping on 50 Gbps 4-PAM Modulation of 25G Class VCSELs 2017 Ingår i: Journal of Lightwave Technology. - 0733-8724 .- 1558-2213. ; 35:19, s. 4203-4209 Tidskriftsartikel (refereegranskat)abstract We present an investigation into the effects of photon lifetime and the associated damping of the modulation response on 50 Gbps 4-PAM signal generation with directly modulated 25G class VCSELs. While 4-PAM benefits from higher slope efficiency and output power, it is shown that the greater impact of intensity noise and dynamic nonlinearities implies that a VCSEL with a longer photon lifetime and more damped response is needed when transitioning from existing 25 Gbps OOK to 50 Gbps 4-PAM using the 25G VCSEL technology.

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