| 1. |
- Esmaeili, M, et al.
(författare)
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Experimental and theoretical investigations of optical properties of GaN/AlGaN MQW nanostructures. Impact of built-in polarization fields
- 2009
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Ingår i: OPTO-ELECTRONICS REVIEW. - : Polish Academy of Sciences Chancellery. - 1230-3402 .- 1896-3757. ; 17:4, s. 293-299
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Tidskriftsartikel (refereegranskat)abstract
- We report the results from detailed optical spectroscopy from MOCVD grown GaN/AlGaN multiple quantum wells (MQWs), as opposed to most previous studies where MBE was employed by means of photoluminescence (PL) technique. In this paper we will present theoretical and experimental results demonstrating how polarization induced electric fields and bound interface charges in GaN/AlGaN MQWs affect the emission peak energy, PL line shape, as well as the emission line width. Theoretically estimated fields in this work are consistent with experimental data. Transition energy of the heavy hole and electron ground state Ee-hh in GaN/AlGaN MQWs were calculated and it is found that it stays in good agreement with the experimental data.
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| 2. |
- Haratizadeh, H, et al.
(författare)
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Effects of Si doping position on the emission energy and recombination dynamics of GaN/AlGaN multiple quantum wells
- 2006
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Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 203:1, s. 149-153
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Tidskriftsartikel (refereegranskat)abstract
- We report results from detailed optical spectroscopy from MOCVD grown GaN/Al0.07Ga0.93N multiple quantum wells (MQWs). Effects of Si doping position on the emission energy and recombination dynamics were studied by means of photoluminescence (PL) and time-resolved PL measurements. The samples were Si doped with the same level but different position of the dopant layer. Only the sample doped in the well shows the MQW emission redshifted compare to the GaN bandgap. The redshift is attributed to the self-energy shift of the electron states due to the correlated motion of the electrons exposed to the fluctuating potential of the donor ions. At low temperature the PL decay time of the sample doped in the well by a factor of two is longer than for the barrier doped case. The difference is explained by the effect of interplay of free carriers and ions on the screening of the polarization field in these doped structures.
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| 3. |
- Haratizadeh, H., et al.
(författare)
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Time resolved photoluminescence study of Si modulation doped GaN/Al 0.07Ga0.93N multiple quantum wells
- 2004
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Ingår i: Physica status solidi. B, Basic research. - : Wiley. - 0370-1972 .- 1521-3951. ; 241:5, s. 1124-1133
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Tidskriftsartikel (refereegranskat)abstract
- The effects of the Si doping level on the recombination dynamics and carrier (exciton) localization in modulation doped GaN/Al0.07Ga 0.93N multiple-quantum-well (MQW) structures were studied by means of photoluminescence (PL) and time-resolved PL measurements. All samples with different doping levels show a QW emission which is blue shifted with respect to the 3.48 eV PL peak from the GaN buffer layer. The decay time at the peak position remains nearly constant in the range of 320-420 ps at 2 K for all doping levels. For the undoped and low-doped samples (3 × 1018 cm-3), which have less free electrons in the QWs, a non-exponential PL decay behaviour at 2 K is attributed to localized exciton recombination. The more highly doped samples (5 × 1018 cm-3 to 10 20 cm-3) show almost exponential decay curves at 2 K, suggesting the recombination of free electrons and localized holes. This localization effect appears even at high electron concentrations to cancel the expected lowering of the radiative lifetime with doping at 2 K, such a lowering is clearly observed at elevated temperatures for the highly doped samples, however. The internal polarization-induced fields of the medium and highly-doped samples are partly screened by the electrons originating from the doping in the barriers. Only the PL peak of the undoped and low-doped samples shows a redshift with time delay, related to the photogenerated carriers. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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| 4. |
- Monemar, Bo, et al.
(författare)
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Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures
- 2003
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Ingår i: Proceedings of SPIE, the International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. ; 5023, s. 63-67
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- We report on low temperature photoluminescence (PL) in In xGa1-xN multiple quantum wells (MQWs) with x in the range 0.1 and highly Si doped barriers of In0.01Ga0.99N. One sample with 3 QWs of width 3.5 nm and barriers of width 10.5 nm had the MQW in the depletion region of the outer surface. Two PL peaks were observed, one QW exciton from the QW closest to the GaN buffer, one lower energy peak related to a 2DEG at the interface to the GaN buffer layer. In a second similar sample 5 QWs of width 3 nm and with 6 nm highly Si doped In0.01Ga 0.99N barriers the MQW was placed in the n-side depletion region of a pn-junction. At low temperatures the PL and electroluminescence (EL) spectra are quite different at no, low, or reverse bias, the PL appearing at higher energy. At high forward bias a spectral component at the EL position appears. This proves a strong influence of the depletion field on the optical spectra. Preliminary results are also reported for n-doped Al0.07Ga 0.93N/GaN structures, with near surface MQWs.
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| 5. |
- Monemar, Bo, et al.
(författare)
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Photoluminescence of InGaN/GaN and AlGaN/GaN multiple quantum well structures : Role of depletion fields and polarization fields
- 2003
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Ingår i: Physica status solidi. A, Applied research. - Weinheim, Germany : Wiley-VCH Verlagsgesellschaft. - 0031-8965 .- 1521-396X. ; 195:3, s. 523-527
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Tidskriftsartikel (refereegranskat)abstract
- We report on low temperature photoluminescence (PL) in InxGa1-xN multiple quantum wells (MQWs) with x in the range 0.1 and highly Si doped barriers of In0.01Ga0.99N. The MQW was placed either in the near surface depletion field or at the n-side depletion field of a pn-junction. At low temperatures the PL and electroluminescence (EL) spectra are quite different at no, low, or reverse bias, the PL appearing at higher energy. At high forward bias a spectral component at the EL position appears in PL. This proves a strong influence of the depletion field on the optical spectra. Preliminary results are also reported for Al0.07Ga0.93N/GaN structures, with near surface MQWs with 5 QWs, both Si-doped and nominally undoped. These structures show clear spectral features related to nonequivalent QWs in a graded depletion field.
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| 6. |
- Sabooni, M., et al.
(författare)
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Dynamical study of the radiative recombination processes in GaN/AlGaN QWs
- 2008
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Ingår i: Journal of materials science. Materials in electronics. - : Springer Science and Business Media LLC. - 0957-4522 .- 1573-482X. ; 19:SUPPL. 1
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Tidskriftsartikel (refereegranskat)abstract
- The effects of the Si doping level on the recombination dynamics and carrier (exciton) localization in modulation-doped GaN/Al0.07 Ga0.93N multiple-quantum-well (MQW) structures were studied by means of photoluminescence (PL) and time-resolved PL measurements. All samples with different doping levels show a QW emission which is blue shifted with respect to the 3.48 eV PL peak from the GaN buffer layer. The decay time at the peak position remains nearly constant in the range of 320-420 ps at 2 K for all doping levels. For the undoped and low doped samples (3 × 1018 cm-3), which have less free electrons in the QWs, a non-exponential PL decay behaviour at 2 K is attributed to localized exciton recombination. The more highly doped samples (5 × 1018 cm-3 to 1020 cm-3) show almost exponential decay curves at 2 K, suggesting the recombination of free electrons and localized holes. The internal polarization-induced fields of the medium and highly-doped samples are partly screened by the electrons originating from the doping in the barriers. The emission peaks in time delayed PL spectra of these samples exhibit almost no shift as time evolves. Only the PL peak of the undoped and low-doped samples shows a redshift with time delay, related to the photogenerated carriers [1]. The decay time for the undoped sample shows non-exponential behaviour typical for localized excitons in III-N QWs. The same behaviour of decay time as a function of emission energy has been reported for InGaN QWs [2]. © Springer Science+Business Media, LLC 2008.
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| 7. |
- Valcheva, E., et al.
(författare)
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Influence of well-width fluctuations on the electronic structure of GaN/AlxGa1-xN multiquantum wells with graded interfaces
- 2007
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Ingår i: Acta Physica Polonica. A. - 0587-4246 .- 1898-794X. ; 112:2, s. 395-400
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Tidskriftsartikel (refereegranskat)abstract
- Experimental and computation results based on chemical composition assessment of metal-organic chemical vapour deposition grown undoped GaN/AlxGa1-xN multiquantum well structures in the low composition limit of x = 0.07 and wide wells demonstrate composition fluctuations in the barrier layers which lead to large-scale nonuniformities and inequivalence of the different wells. As a consequence the experimental photoluminescence spectra at low temperature show a double peak structure indicative of well-width fluctuations by one lattice parameter (2 monolayers).
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| 8. |
- Esmaeili, M, et al.
(författare)
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EFFECT OF THE EXTRINSIC AND TEMPORAL CARRIERS ON RADIATIVE RECOMBINATION OF III-NITRIDE NANOSTRUCTURES
- 2008
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Ingår i: IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION A-SCIENCE. - 1028-6276. ; 32:A3, s. 207-213
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Tidskriftsartikel (refereegranskat)abstract
- Due to many important applications, the group III-Nitride semiconductors have recently attracted remarkable attention among semiconductor researchers and engineers. In this paper, we report on the impact of extrinsic and temporal carriers on the screening of polarization internal fields. The optical efficiency of GaN/AlGaN multiple quantum well (MQW) nanostructures were studied by means of photoluminescence (PL) and time-resolved PL measurements. Extrinsic carriers come from Si doping in the barriers, while temporal carriers originate when the samples are excited by laser beam. The emission peaks of MQWs in PL spectra of the undoped and low-doped samples show a shift towards higher energy levels as excitation intensity increases, while the other samples do not exhibit such a phenomenon due to the dominance of the extrinsic carriers. The transient data confirm the results of the PL measurements.
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| 9. |
- Esmaeili, M, et al.
(författare)
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Investigation of optical properties of modulation doped GaN/AlGaN MQWS nanostructures
- 2009
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Ingår i: PHYSICA B-CONDENSED MATTER. - : Elsevier BV. - 0921-4526. ; 404:21, s. 4233-4236
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Tidskriftsartikel (refereegranskat)abstract
- Due to many important applications, the group III-nitride semiconductors have recently attracted remarkable attention among the semiconductor researchers and engineers. In this paper, we report on the impact of the extrinsic and temporal carriers on the screening of the polarization internal fields. The optical efficiency of GaN/AlGaN multiple quantum well (MQW) nanostructures were studied by means of photoluminescence (PL) and time-resolved PL measurements. Extrinsic carriers come from Si doping in the barriers while temporal carriers originate when the samples are excited by the laser beam. The emission peaks of MQWs in PL spectra of the undoped and low-doped samples show a shift towards higher energy levels as excitation intensity increases, while the other samples do not exhibit such a phenomenon due to the dominance of the extrinsic carriers. The transient data confirm the results of the PL measurements.
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| 10. |
- Esmaeili, M., et al.
(författare)
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Optical properties of GaN/AlGaN QW nanostructures with different well and barrier widths
- 2007
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Ingår i: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 19:35
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Tidskriftsartikel (refereegranskat)abstract
- Optical properties of wurtzite AlGaN/GaN quantum well (QW) structures grown by molecular-beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates have been investigated by means of photoluminescence (PL) and time-resolved photoluminescence (TRPL) at low temperature. The PL spectra exhibit a blue-shifted emission of GaN/AlGaN QW nanostructures by decreasing the barrier width, in contrast to the arsenide system (Pabla A S et al 1993 Appl. Phys. Lett. 63 752). This behavior is attributed to a redistribution across the samples of the huge built-in electric field (several hundreds of kV cm(-1)) induced by the polarization difference between wells and barriers. The trend of the barrier width dependence of the internal polarization field is reproduced by using simple electrostatic arguments. In addition, the effect of well width variation on the optical transition and decay time of GaN multiple quantum wells (MQWs) have been investigated, and it has been shown that the screening of the piezoelectric field and the electron-hole separation are strongly dependent on the well thickness and have a profound effect on the optical properties of the GaN/AlGaN MQWs. The time-resolved PL spectra of 3 nm well MQWs reveal that the spectral peak position shifts toward lower energies as the decay time increases and becomes red-shifted at longer decay times.
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| 11. |
- Gholami, M., et al.
(författare)
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Alternation of band gap and localization of excitons in InGaNAs nanostructures with low nitrogen content
- 2008
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 19:31
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Tidskriftsartikel (refereegranskat)abstract
- Continuous wave photoluminescence (cw PL) spectroscopy has been used to study the optical properties of a set of InGaNAs epilayers and single quantum wells with nitrogen concentration less than a few per cent at different temperatures and different excitation powers. We found that nitrogen has a critical role on the emission light of InGaNAs nanostructures and the recombination mechanism. The incorporation of a few per cent of nitrogen leads to shrinkage of the InGaNAs band gap. The physical origin of such band gap reduction has been investigated both experimentally and theoretically by using a band anticrossing model. We have found that localization of excitons that have been caused by incorporation of a few per cent of nitrogen in these structures is the main explanation of such anomalous behavior observed in the low-temperature photoluminescence spectra of these nanostructures. The localization energies of carriers have been evaluated by studying the variation of the quantum well (QW) emission versus temperature, and it was found that the localization energy increases with increasing nitrogen composition. Our data also show that, with increasing excitation intensity, the PL peak position moves to higher energies (blue shift) due to the filling of localized states and capture centers for excitons by photo-generated carriers.
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| 12. |
- Gholami, M., et al.
(författare)
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Evaluation of optical quality and properties of Ga0.64In0.36N0.006As0.994 lattice matched to GaAs by using photoluminescence spectroscopy
- 2009
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Ingår i: Opto-Electronics Review. - : Polish Academy of Sciences Chancellery. - 1230-3402 .- 1896-3757. ; 17:3, s. 260-264
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Tidskriftsartikel (refereegranskat)abstract
- We have investigated optical properties of Ga0.64In0.36N0.006As0.994/GaAs single quantum-well structures using photoluminescence technique. We have found that nitrogen creates potential fluctuations in the InGaNAs structures, so it is the cause of trap centres in these structures and leads to localized excitons recombination dynamics. The near-band edge PL at 2 K exhibited a blueshift with an increase in excitation intensity of a sample but there is not such a shift in the PL peak position energy of same sample at 150 K. It has been found that PL spectra have a large full width at half maximum (FWHM) value at 2 K. These results are discussed in terms of carrier localization. Additionally, our results suggest decreasing PL integrated intensity in this structure, possibly due to non-radiative recombination. It has been shown that thermal annealing reduces the local strain created by nitrogen. By annealing process, a blue shifted emission can be observed.
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