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Sökning: WFRF:(Heeger Alan J.)

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  • Edman, Ludvig, 1967-, et al. (författare)
  • Influence of the anion on the kinetics and stability of a light-emitting electrochemical cell
  • 2003
  • Ingår i: Synthetic metals. - : Elsevier. - 0379-6779 .- 1879-3290. ; 138:3, s. 441-446
  • Tidskriftsartikel (refereegranskat)abstract
    • The selection of the anion is shown to be crucial for the response time and the lifetime of light-emitting electrochemical cells (LECs) fabricated with [co-block phenyl-substituted poly(para phenylene vinylene)]-PEO-LiX (X = Tf, TFSI, Tf-TFSI). With a mixed-anion (X = Tf-TFSI) salt. the LEC turned on in less than 0.4 s at ΔU = 4.0 V, with X = TFS1 it turned on in a few seconds, while X = Tf produced devices with significantly larger response times with a strong dependence on the film thickness. We attribute this significant variation in the response to the morphology of the PEO-LiX phase at room temperature: PEO-LiTf is largely crystalline with a correspondingly limited ionic mobility: PEO-LiTf-TFSI is amorphous with a relatively high mobility; and heat-treated PEO-LiTFSI is typically partially amorphous. For lifetimes. we focused on 3.0 ≤ ΔU ≤ 4.0 V since this range coincided with a crossover in performance for the X = Tf devices. At ΔU = 3.0 V, these lasted the entire measurement cycle (=55 h) with constant efficiency and only a small decrease in light output. At ΔU ≥ 3.25 V. the same devices exhibited a limited lifetime with a linear dependence on the salt concentration and a decrease in the efficiency with time. For X = TFSI. Tf-TFSI short lifetimes and a decrease in efficiency with time were obtained independent of the applied voltage. Considering recently published data on electrochemical stability, we propose that an irreversible overreduction of the anion is a significant side reaction that limits the lifetime of LEC systems.
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  • Heeger, Alan J, et al. (författare)
  • Injection lasers fabricated from semiconducting polymers
  • 2004
  • Patent (populärvet., debatt m.m.)abstract
    • A solid state lasing structure comprising a field effect transistor in which source and drain electrodes are disposed on a semiconducting light emitting organic polymer forming an active layer on a gate whereby current between the source and drain electrodes defines and flows along a channel in the active layer to define a recombination and emission zone
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